2SC4809 - Datasheet Archive

 

2SC4809 Silicon NPN epitaxial planer type For high-frequency amplification/oscillation/mixing Unit: mm 1.6±0.15 Ratings

 

Transistor 2SC4809 2SC4809 Silicon NPN epitaxial planer type For high-frequency amplification/oscillation/mixing Unit: mm 1.6±0.15 Ratings +0.1 0.5 0.5 1.6±0.1 Unit Collector to base voltage VCBO 15 V Collector to emitter voltage VCEO 10 VEBO 3 V Collector current IC 50 mA Collector power dissipation PC 125 mW Junction temperature Tj 125 °C Storage temperature Tstg ­55 ~ +125 +0.1 0.2±0.1 V Emitter to base voltage 0 to 0.1 Symbol 3 2 (Ta=25°C) Parameter 1 0.15­0.05 s Absolute Maximum Ratings 0.4 0.45±0.1 0.3 q High transition frequency fT. Small collector output capacitance Cob and common base reverse transfer capacitance Crb. SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing. 1.0±0.1 q 0.75±0.15 q 0.8±0.1 0.2­0.05 s Features 0.4 °C s Electrical Characteristics 1:Base 2:Emitter 3:Collector EIAJ:SC­75 SS­Mini Type Package Marking symbol : 1S (Ta=25°C) Parameter Symbol Conditions min typ max Unit 1 µA Collector cutoff current ICBO VCB = 10V, IE = 0 Collector to emitter voltage VCEO IC = 2mA, IB = 0 Emitter to base voltage VEBO IE = 10µA, IC = 0 3 Forward current transfer ratio hFE* VCE = 4V, IC = 5mA 75 Collector to emitter saturation voltage VCE(sat) IC = 20mA, IB = 4mA Transition frequency fT VCB = 4V, IE = ­5mA, f = 200MHz Collector output capacitance Cob VCB = 4V, IE = 0, f = 1MHz 1.4 pF Base time constant rbb' · CC VCB = 4V, IE = ­5mA, f = 31.9MHz 11 PS Common emitter reverse transfer capacitance Crb VCB = 4V, IE = 0, f = 1MHz 0.45 pF VCE = 4V, IC = 100µA hFE ratio *h FE VCE = 4V, IC = 5mA 10 V V 400 0.5 1.4 0.75 1.9 V 2.7 GHz 1.6 Rank classification Rank P Q R hFE 75 ~ 130 110 ~ 220 200 ~ 400 Marking Symbol 1SP 1SQ 1SR 1 2SC4809 2SC4809 Transistor PC - Ta IC - VCE 60 50 100 75 50 60 50 IB=500µA 400µA 40 300µA 30 200µA 20 100µA 25 Ta=75°C ­25°C 40 30 20 10 10 0 40 60 80 100 120 140 160 0 0 2 10 3 1 Ta=75°C 25°C ­25°C 0.03 1 3 10 30 100 Collector current IC (mA) Cob - VCB IE=0 f=1MHz Ta=25°C 1.2 1.0 0.8 0.6 0.4 0.2 0 1 3 10 0 0.4 30 100 Collector to base voltage VCB (V) 0.8 1.2 1.6 2.0 Base to emitter voltage VBE (V) fT - I E 4.0 300 Ta=75°C 240 25°C 180 ­25°C 120 60 VCB=4V Ta=25°C 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0.1 0.3 1 3 10 30 Collector current IC (mA) 1.6 1.4 12 VCE=4V Forward current transfer ratio hFE 30 0.3 10 360 IC/IB=10 0.01 0.1 8 hFE - IC 100 0.1 6 Collector to emitter voltage VCE (V) VCE(sat) - IC 0.3 4 Transition frequency fT (GHz) 20 Ambient temperature Ta (°C) Collector to emitter saturation voltage VCE(sat) (V) Collector current IC (mA) 125 0 Collector output capacitance Cob (pF) VCE=4V 25°C Ta=25°C 70 0 2 IC - VBE 80 Collector current IC (mA) Collector power dissipation PC (mW) 150 100 0 ­ 0.1 ­ 0.3 ­1 ­3 ­10 ­30 Emitter current IE (mA) ­100