2SC4231 ITO-220 - Datasheet Archive

 

Product Specification 2SC4231 Silicon NPN Power Transistors DESCRIPTION ·With ITO-220 package ·Switching power

 

SavantIC Semiconductor Product Specification 2SC4231 2SC4231 Silicon NPN Power Transistors DESCRIPTION ·With ITO-220 ITO-220 package ·Switching power transistor ·High voltage ,high speed PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (ITO-220 ITO-220) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1200 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 2 A ICM Collector current-Peak 4 A IB Base current 1 A IBM Base current-Peak 2 A PT Total power dissipation 30 W Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction case MAX UNIT 4.16 /W SavantIC Semiconductor Product Specification 2SC4231 2SC4231 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A;IB=0 VCEsat Collector-emitter saturation voltage IC=1A; IB=0.2A 1.0 V VBEsat Base-emitter saturation voltage IC=1A ;IB=0.2A 1.5 V At rated volatge 0.1 mA 0.1 mA ICBO CONDITIONS MIN TYP. MAX 800 UNIT V Collector cut-off current ICEO Collector cut-off current IEBO Emitter cut-off current At rated volatge hFE-1 DC current gain IC=1A ; VCE=5V 8 hFE-2 DC current gain IC=1mA ; VCE=5V 7 fT Transition frequency IC=0.2A ; VCE=10V ton Turn-on time ts Storage time tf Fall time 8 MHz 0.5 2 3.5 µs 0.3 IC=1;IB1=0.2A; IB2=0.4A;RL=250C VBB2=4V µs µs SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm) 3 2SC4231 2SC4231