NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
2SC2412K 2SC4081 2SC4617 2SC5658 2SC1740S SC-59 SC-75A SC-70 2SA1037AK 2SA1576A - Datasheet Archive
2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S Dimensions (Unit : mm) 1.6 1.0 0.2 0.2 0.3 0.2 Each lead has same dimensions
General purpose transistor (50V, 0.15A) 2SC2412K 2SC2412K / 2SC4081 2SC4081 / 2SC4617 2SC4617 / 2SC5658 2SC5658 / 2SC1740S 2SC1740S Dimensions (Unit : mm) 1.6 1.0 0.2 0.2 0.3 0.2 Each lead has same dimensions 0~0.1 0.55 0.15 0.9 0~0.1 0.1Min. 0~0.1 0.1Min. Each lead has same dimensions ROHM : UMT3 EIAJ : SC-59 SC-59 (2) Base JEDEC : SOT-346 (3) Collector ROHM : EMT3 (1) Emitter (2) Base EIAJ : SC-75A SC-75A (2) Base JEDEC : SOT-323 (1) Emitter (1) Emitter EIAJ : SC-70 SC-70 ROHM : SMT3 (3) Collector JEDEC : SOT-416 (3) Collector Abbreviated symbol: B* Abbreviated symbol: B* 2SC5658 2SC5658 Abbreviated symbol: B* 2SC1740S 2SC1740S (15Min.) 0.8 (2) (3) 0.22 0.5 (1) 0.13 0~0.1 2±0.2 3±0.2 0.2 0.4 0.4 0.2 1.2 0.32 4±0.2 1.2 0.8 3Min. 0.3Min. 1.6 0.7 0.15 1.1 0.8 0.15 Structure Epitaxial planar type NPN silicon transistor 0.8 2.1 2.8 (2) (3) 0.7 (1) 1.25 1.6 0.5 0.5 (1) 2.0 1.3 (2) (3) 0.3 2.9 (2) (3) 0.4 2SC4617 2SC4617 0.65 0.65 2SC4081 2SC4081 (1) 2SC2412K 2SC2412K 0.95 0.95 1.9 Features 1. Low Cob. Cob=2.0pF (Typ.)Cob=2.0pF (Typ.) 2. Complements the 2SA1037AK 2SA1037AK / 2SA1576A 2SA1576A / 2SA1774H 2SA1774H / 2SA2029 2SA2029 / 2SA933AS 2SA933AS. 0.45+0.15 -0.05 0.15Max. 2.5 +0.4 -0.1 5 0.5 +0.15 0.45 -0.05 (1) (2) (3) (1) Base (2) Emitter (3) Collector ROHM : VMT3 ROHM : SPT EIAJ : SC-72 SC-72 (1) Emitter (2) Collector (3) Base Abbreviated symbol: B* * Denotes hFE Absolute maximum (Ta=25°C) Parameter Symbol Limits Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 7 V IC 0.15 A Collector current 2SC2412K 2SC2412K, 2SC4081 2SC4081 0.2 Collector power 2SC4617 2SC4617, 2SC5658 2SC5658 dissipation 2SC1740S 2SC1740S PC 0.15 W 0.3 Junction temperature Tj 150 °C Storage temperature Tstg -55 to +150 °C Electrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO 60 - - V IC=50µA Collector-emitter breakdown voltage BVCEO 50 - - V IC=1mA Emitter-base breakdown voltage BVEBO 7 - - V IE=50µA Collector cutoff current ICBO - - 0.1 µA VCB=60V Emitter cutoff current IEBO - - 0.1 µA VEB=7V DC current transfer ratio hFE 120 - 560 - VCE(sat) - - 0.4 V Transition frequency fT - 180 - MHz Output capacitance Cob - 2 3.5 pF Collector-emitter saturation voltage www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. 1/3 VCE=6V, IC=1mA IC/IB=50mA/5mA VCE=12V, IE=-2mA, f=100MHz VCE=12V, IE=0A, f=1MHz 2009.04 - Rev.B 2SC2412K 2SC2412K / 2SC4081 2SC4081 / 2SC4617 2SC4617 / 2SC5658 2SC5658 / 2SC1740S 2SC1740S Data Sheet Packaging specifications and hFE Taping Package Code T146 T106 TL T2L TP Basic ordering unit (pieces) 3000 3000 3000 8000 5000 - - - - - - - - - Type hFE 2SC2412K 2SC2412K QRS 2SC4081 2SC4081 QRS - 2SC4617 2SC4617 QRS - - 2SC5658 2SC5658 QRS - - - 2SC1740S 2SC1740S QRS - - - - - hFE values are classified as follows : Item Q R S hFE 120 to 270 180 to 390 270 to 560 Electrical characterristic curves COLLECTOR CURRENT : IC (mA) 2 1 25°C -55°C 5 0.5 0.2 0.25mA 60 0.20mA 0.15mA 40 0.10mA 20 0.05mA IB=0A Fig.1 Fig.2 1.2 DC CURRENT GAIN : hFE Ta=100°C VCE=5V 3V 1V 200 100 50 20 2 5 10 20 50 100 200 1.6 VCE=5V -55°C 100 50 20 0.5 1 2 5 10 20 50 100 200 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Fig.4 DC current gain vs. collector current ( ) Fig.5 DC current gain vs. collector current ( ) www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. 2.0 25°C 200 10 0.2 27µA 8 2/3 24µA 21µA 6 18µA 15µA 12µA 4 9µA 6µA 2 3µA 4 IB=0A 12 8 16 20 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.3 Grounded emitter output characteristics ( ) 500 Ta=25°C 0.5 1 0.8 30µA Ta=25°C 0 0 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Grounded emitter propagation characteristics 10 0.2 0.4 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 BASE TO EMITTER VOLTAGE : VBE (V) DC CURRENT GAIN : hFE 0.30mA 0 0.1 0 500 80 10 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 10 Ta=100°C COLLECTOR CURRENT : IC (mA) 20 0.50mA mA 0.45 A 0.40m 0.35mA Ta=25°C VCE=6V COLLECTOR CURRENT : IC (mA) 100 50 Grounded emitter output characteristics ( ) 0.5 Ta=25°C 0.2 IC/IB=50 20 10 0.1 0.05 0.02 0.01 0.2 0.5 1 2 5 10 20 50 100 200 COLLECTOR CURRENT : IC (mA) Fig. 6 Collector-emitter saturation voltage vs. collector current 2009.04 - Rev.B 500 Ta=25°C VCE=5V 3V 1V 200 100 50 20 10 0.2 0.5 1 VCE=5V Ta=100°C DC CURRENT GAIN : hFE DC CURRENT GAIN : hFE 500 2 5 10 20 -55°C 100 50 20 10 0.2 50 100 200 25°C 200 0.5 1 2 5 10 20 50 100 200 Fig.5 DC current gain vs. collector current ( ) 20 10 Ta=25°C f=1MHz IE=0A IC=0A Cib 5 2 Co b 1 0.2 0.5 1 2 5 10 20 50 BASE COLLECTOR TIME CONSTANT : Cc·rbb' (ps) COLLECTOR CURRENT : IC (mA) Fig.4 DC current gain vs. collector current ( ) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR CURRENT : IC (mA) COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.10 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. Data Sheet COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 2SC2412K 2SC2412K / 2SC4081 2SC4081 / 2SC4617 2SC4617 / 2SC5658 2SC5658 / 2SC1740S 2SC1740S 0.5 Ta=25°C 0.2 IC/IB=50 20 10 0.1 0.05 0.02 0.01 0.2 0.5 1 2 5 10 20 50 100 200 COLLECTOR CURRENT : IC (mA) Fig. 6 Collector-emitter saturation voltage vs. collector current Ta=25°C f=32MHZ 32MHZ VCB=6V 200 100 50 20 10 -0.2 -0.5 -1 -2 -5 -10 EMITTER CURRENT : IE (mA) Fig.11 Base-collector time constant vs. emitter current 3/3 2009.04 - Rev.B Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information. 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