2SC3857 MT-200 2SA1493 - Datasheet Archive

 

Product Specification 2SC3857 Silicon NPN Power Transistors DESCRIPTION With MT-200 package Complement to type 2SA1493

 

Inchange Semiconductor Product Specification 2SC3857 2SC3857 Silicon NPN Power Transistors DESCRIPTION With MT-200 MT-200 package Complement to type 2SA1493 2SA1493 APPLICATIONS Audio and general purpose PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (MT-200 MT-200) and symbol TOR UC Absolute maximum ratings(Ta=25) SYMBOL OND IC VALUE UNIT 200 V 200 V 6 V Collector current 15 A IB Base current 5 A PC Collector power dissipation 150 W Tj Junction temperature 150 Tstg Storage temperature -55~150 VCBO VCEO VEBO IC PARAMETER CONDITIONS E SEM NG Collector-base voltage CHA IN Open emitter Collector-emitter voltage Open base Emitter-base voltage Open collector TC=25 Inchange Semiconductor Product Specification 2SC3857 2SC3857 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN V(BR)CEO Collector-emitter breakdown voltage IC=50mA; IB=0 VCEsat Collector-emitter saturation voltage IC=10 A;IB=1 A 3.0 V ICBO Collector cut-off current VCB=200V; IE=0 100 A IEBO Emitter cut-off current VEB=6V; IC=0 100 A hFE DC current gain IC=5A ; VCE=4V fT Transition frequency IE=-0.5A ; VCE=12V 20 MHz COB Output capacitance IE=0; VCB=10V;f=1MHz 250 pF ts tf Turn-on time CHA IN Fall time hFE classifications O P Y 50-100 70-140 90-180 2 UNIT V 50 180 TOR UC OND IC IC=5A;RL=12 IB1=- IB2=0.5A VCC=60V E SEM NG Storage time MAX 200 Switching times ton TYP. 0.30 s 2.40 s 0.40 s Inchange Semiconductor Product Specification 2SC3857 2SC3857 Silicon NPN Power Transistors PACKAGE OUTLINE E SEM NG CHA IN OND IC Fig.2 Outline dimensions 3 TOR UC Inchange Semiconductor Product Specification 2SC3857 2SC3857 Silicon NPN Power Transistors E SEM NG CHA IN 4 OND IC TOR UC