2SC3669 2SA1429 2-7D101A C3669 20070701-EN

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3669 Power Amplifier Applications Power Switching Applications

2SC3669 2SC3669 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3669 2SC3669 Power Amplifier Applications Power Switching Applications Unit: mm · Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) · High-speed switching: tstg = 1.0 s (typ.) · Complementary to 2SA1429 2SA1429 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 80 V Collector-emitter voltage VCEO 80 V Emitter-base voltage VEBO 5 V Collector current IC 2 A Base current IB 1 A Collector power dissipation PC 1000 mW Junction temperature Tj 150 Tstg -55 to 150 Storage temperature range JEDEC °C JEITA °C TOSHIBA 2-7D101A 2-7D101A Note: Using continuously under heavy loads (e.g. the application of high Weight: 0.2 g (typ.) temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-09 2SC3669 2SC3669 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 80 V, IE = 0 1.0 A Emitter cut-off current IEBO VEB = 5 V, IC = 0 1.0 A V (BR) CEO IC = 10 mA, IB = 0 80 V VCE = 2 V, IC = 0.5 A 70 240 hFE (2) VCE = 2 V, IC = 1.5 A 40 Collector-emitter saturation voltage VCE (sat) IC = 1 A, IB = 0.05 A 0.15 0.5 V Base-emitter saturation voltage VBE (sat) IC = 1 A, IB = 0.05 A 0.9 1.2 V fT VCE = 2 V, IC = 0.5 A 100 MHz VCB = 10 V, IE = 0, f = 1 MHz 30 pF 0.2 1.0 0.2 hFE (1) DC current gain (Note) Transition frequency Collector output capacitance Cob ton 20 s Input Switching time Storage time IB2 IB1 Turn-on time tstg IB1 IB2 Output 30 Collector-emitter breakdown voltage s VCC = 30 V Fall time tf IB1 = -IB2 = 0.05 A, duty cycle 1% Note: hFE (1) classification O: 70 to 140, Y: 120 to 240 Marking C3669 C3669 Part No. (or abbreviation code) Lot No. Characteristics indicator A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-09 2SC3669 2SC3669 IC VCE 2.0 35 VCE IC 1 25 20 Common emitter VCE (V) 1.6 10 1.2 0.8 IB = 5 mA Common emitter 0.4 Ta = 25°C 0.8 IB = 5 mA Collector-emitter voltage Collector current IC (A) 15 Ta = 25°C 2 4 6 8 10 Collector-emitter voltage 15 20 30 0.6 0.4 40 0.2 0 0 0 10 50 0 0 12 0.4 VCE (V) 0.8 1.2 1.6 2.0 Collector current IC VCE IC 1 Common emitter VCE (V) Common emitter Ta = 100°C 0.8 IB = -5 mA 10 15 20 30 40 0.6 0.4 0.8 50 15 20 30 40 50 0.6 70 0.4 0.2 ) 0.2 Ta = -55°C IB = 5 mA 10 Collector-emitter voltage VCE (V) (A) VCE IC 1 Collector-emitter voltage 2.4 0 0 0.4 0.8 1.2 1.6 Collector current IC 2.0 0 0 2.4 0.4 0.8 (A) hFE IC 2.0 2.4 (A) Collector-emitter saturation voltage VCE (sat) (V) 0.5 Common emitter 300 DC current gain hFE 1.6 VCE (sat) IC 500 VCE = 2 V Ta = 100°C 100 25 50 -55 30 10 0.01 1.2 Collector current IC 0.03 0.1 0.3 Collector current IC 1 Common emitter 0.3 (A) Ta = 100°C 0.1 0.05 25 -55 0.03 0.01 0.01 2 IC/IB = 20 0.03 0.05 0.1 0.3 0.5 Collector current IC 3 1 (A) 2006-11-09 2SC3669 2SC3669 IC VBE 2.0 Common emitter Common emitter VCE = 2 V IC/IB = 20 Ta = -55°C (A) 1 0.5 Collector current IC Base-emitter saturation voltage VBE (sat) (V) VBE (sat) IC 3 25 100 0.3 0.1 0.01 0.03 0.05 0.1 0.3 Collector current IC 0.5 1 2 1.6 1.2 Ta = 100°C 0.8 25 -55 0.4 (A) 0 0 0.2 0.4 0.6 0.8 Base-emitter voltage 4 1.0 1.2 1.6 VBE (V) 2006-11-09 2SC3669 2SC3669 RESTRICTIONS ON PRODUCT USE 20070701-EN 20070701-EN · The information contained herein is subject to change without notice. · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. · The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. · Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 2006-11-09