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2SC3583-T1B-A Renesas Electronics Corporation UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 visit Digikey Buy
2SC3583-A California Eastern Laboratories (CEL) RF TRANSISTOR NPN SOT-23 visit Digikey Buy
2SC3583-T1B-A California Eastern Laboratories (CEL) RF TRANSISTOR NPN SOT-23 visit Digikey Buy

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Part : 2SC3583-T1B-A Supplier : California Eastern Laboratories Manufacturer : Avnet Stock : 2,350 Best Price : - Price Each : -
Part : 2SC3583-T1B Supplier : NEC Manufacturer : basicEparts Stock : 60,000 Best Price : - Price Each : -
Part : 2SC3583-T1B Supplier : NEC Manufacturer : basicEparts Stock : 1,181 Best Price : - Price Each : -
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Part : 2SC3583-R(T1B-A) Supplier : Renesas Electronics Manufacturer : Chip1Stop Stock : 4,900 Best Price : $1.41 Price Each : $1.73
Part : 2SC3583-T1B-A Supplier : Renesas Electronics Manufacturer : Chip1Stop Stock : 625 Best Price : $0.3330 Price Each : $0.7230
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2SC3583 Datasheet

Part Manufacturer Description PDF Type
2SC3583 Kexin NPN Silicon Epitaxial Transistor Original
2SC3583 NEC Semiconductor Selection Guide 1995 Original
2SC3583 NEC Semiconductor Selection Guide Original
2SC3583 NEC MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR Original
2SC3583 TY Semiconductor NPN Silicon Epitaxial Transistor - SOT-23 Original
2SC3583 N/A Japanese Transistor Cross References (2S) Scan
2SC3583 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
2SC3583 N/A Semiconductor Master Cross Reference Guide Scan
2SC3583 N/A High Frequency Device Data Book (Japanese) Scan
2SC3583 N/A Transistor Substitution Data Book 1993 Scan
2SC3583 N/A The Transistor Manual (Japanese) 1993 Scan
2SC3583-L NEC For amplify microwave and low noise. Original
2SC3583Q NEC Microwave Low Noise Amplifier NPN Silicon Epitaxial Transistor Original
2SC3583R NEC Microwave Low Noise Amplifier NPN Silicon Epitaxial Transistor Original
2SC3583S NEC Microwave Low Noise Amplifier NPN Silicon Epitaxial Transistor Original
2SC3583-T1B NEC For amplify microwave and low noise. Original
2SC3583-T2B NEC For amplify microwave and low noise. Original

2SC3583

Catalog Datasheet MFG & Type PDF Document Tags

AN 7591 POWER AMPLIFIER

Abstract: ic an 7591 DATA SHEET DATA SHEET SILICON TRANSISTOR 2SC3583 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC3583 is an NPN epitaxial silicon transistor designed for use in , Specification © 1984 2SC3583 TYPICAL CHARACTERISTICS (TA = 25 C) FEED-BACK CAPACITANCE vs , 12 8 4 0 0.1 0.2 0.3 0.5 0.7. 1.0 f-Frequency-GHz 2.0 3.0 2SC3583 NOISE , 2SC3583 S-PARAMETER VCE = 8 V 200 MHz Step 1.4 0. 18 32 0. 1.8 0.2 0.1 0.3 7 3
NEC
Original
AN 7591 POWER AMPLIFIER ic an 7591 marking R33 2SC3583 R35 AN 7591 MARKING 6260

AN 7591 POWER AMPLIFIER

Abstract: an 7591 SILICON TRANSISTOR 2SC3583 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR PACKAGE DIMENSIONS in m illim e te rs DESCRIPTION The 2SC3583 is an NPN epitaxial silicon transistor , .0 G H z V c e = 8 V , l c = 7 m A , f = 1.0 G H z 293 2SC3583 TYPICAL CHARACTERISTICS (Ta , IL A B L E 294 Gain Bandwidth Product - MHz 2SC3583 N O IS E F I G U R E vs. CO LLEC , -2 6 .4 -2 9 .9 -3 2 .2 -3 4 .3 -4 2 .1 295 2SC3583 S-PARAMETER S u e . S22e ~ F R E Q U E N
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OCR Scan
ci an 7591

AN 7591 POWER AMPLIFIER

Abstract: an 7591 DATA SHEET SILICON TRANSISTOR 2SC3583 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION PACKAGE DIMENSIONS (Units: mm) The 2 S C 3 5 8 3 is an NPN epitaxial silicon , ) Date Published March 1997 N Printed in Japan © NEC Corporation 1 9 8 4 NEC 2SC3583 , PRODUUTvs. COLLECTOR CURRENT 50 f-Frequency-GHz 2SC3583 IM C E NOISE FIGURE vs. 0.5 1 , 0.221 64.0 0.312 -42.1 3 NEC 2SC3583 S-PARAMETER S u e , S 22e - F R E Q U E N C Y
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OCR Scan
nec d 1564

marking R33

Abstract: 2SC3583 . DATA SHEET DATA SHEET SILICON TRANSISTOR 2SC3583 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC3583 is an NPN epitaxial silicon transistor designed for use in , Specification © 1984 2SC3583 TYPICAL CHARACTERISTICS (TA = 25 C) FEED-BACK CAPACITANCE vs , 12 8 4 0 0.1 0.2 0.3 0.5 0.7. 1.0 f-Frequency-GHz 2.0 3.0 2SC3583 NOISE , 2SC3583 S-PARAMETER VCE = 8 V 200 MHz Step 1.4 0. 18 32 0. 1.8 0.2 0.1 0.3 7 3
Renesas Electronics
Original
transistor NEC D 587

transistor NEC D 582

Abstract: AN 7591 POWER AMPLIFIER DATA SHEET SILICON TRANSISTOR 2SC3583 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR D ES C R IP TIO N The 2SC3583 is an NPN epitaxial silicon transistor designed for use in , 2SC3583 f = 1.0 MHz 1 0.7 u 0.5 _ £ ° 03 0.2 TA-Ambient Temperature-°C 0.1 , Product-MHz Ic-Collector Current-mA f-Frequency-GHz 2 NEC N O IS E F IG U R E vs. 2SC3583 , -42.1 3 NEC S -P A R A M E T E R Sue, S22e-FREQUENCY CONDITION V ce = 8 V 2SC3583 200
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OCR Scan
transistor NEC D 582 Nec b 616

ir 4606

Abstract: 2SC4621 - 194 - fi £ Type No. tt â'¬ Manuf. = if SANYO M S TOSHIBA 0 C NEC B ÃL HITACHI » ± a FUJITSU «¡ T MATSUSHITA = m MITSUBISHI â¡ â'" A ROHM 2SC 4589 / 0 ir 2SC3552 2SC4028 2SC3536 2SC4111 2SC 4591 h a 2SC4317 2SC3583 2SC3904 2SC 4592 in â W 2SC4320 2SC4094 2SC4515 2SC 4593 B iL 2SC4867 2SC4321 2SC4227 2SC4805 2SC 4594 ID 2SC4485 2SC2002 2SC3939 2SC3244 2SC 4595 â¡ -A 2SC3748 2SC3709 2SC4552 2SD2151 2SC 4596 â¡ â'"Á 2SC3746 2SC3691 Zb>D14U8
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OCR Scan
2SC3310 2SC3626 2SC3559 2SD1347 2SC3688 2SD2356 ir 4606 2SC4621 2SD2365 4604 4606 2sc4611 2SC4938 2SC4768 2SD1571 2SC3403

2SC3541

Abstract: 2SC3584 0.2 0.01 2SC3582 HS MW LN A 20 10 0.065 0. 6 1 10 50 250 8 0.02 2SC3583 HS MW LN A 20 10 0.065 , 2SC3583 9000* 8 0.02 0.8 NF max 2. 5dB f=lGHz (f ai 4) EBEC 2SC3584 10000* 6 0.01 0.8 (SC
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OCR Scan
2SC3537 2SC3538 2SC3539 2SC3541 2SC3542 2SC3544 2SC3566 2SC3586 NEC-F3 900MH

MRF9331

Abstract: 2SC3029 2SC3016 lBFW30 lHBFW30 2N5835 2SC2548 2SC3583 2SC3583 >= 10 V Sanyo Elect Sanyo Elect Hitachi ltd
Advanced Semiconductor
Original
MRF9331 2SC3029 2N2206 MMBR5031 340t MMT3960A 2N2318 2N2320 2N3953 MMT3960 BFT24 2N5186
Abstract: 2SC3583 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V(BR)CEO (V)10 V(BR)CBO (V)20 I(C) Max. (A)65m Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition)10 h(FE) Max. Current gain.250 @I(C) (A) (Test Condition)20m @V(CE) (V) (Test Condition)8.0 f(T) Min. (Hz) Transition Freq9.0GÃ' @I(C) (A) (Test Condition)20m @V(CE) (V) (Test Condition)8.0 Power Gain Min. (dB)11 @I(C American Microsemiconductor
Original
Abstract: Transistors IC SMD Type Product specification 2SC3583 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 NF 1.2 dB TYP. @f = 1.0 GHz 1 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 1.Base 2.Emitter +0.1 0.38-0.1 0-0.1 +0.1 0.97-0.1 Ga 13 dB TYP. @f = 1.0 GHz 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO 20 V TY Semiconductor
Original
R33/Q R34/R R35/S

2SC4470

Abstract: 4892 2SC4805 2SC 4868 = & 2SC4317 2SC3583 2SC4591 2SC4805 2SC 4869 H $ 2SC4320 2SC4095 2SC4900
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OCR Scan
2SC3937 2SC4470 2SC3356 2SC3704 2SC3609 2SC4093 4892 2sc3828 2SC4901 2SC4394 2SC4226 2SC49

transistor 2SC5066

Abstract: BFP620 2SC3583 2SC5098 2SC5111 2SC5089 2SC5109 2SC5079 2SC5140 2SC5555 2SC2734 2SC5504 2SC4931
-
Original
NESG250134 NESG260234 2SC5508 BFP450 BFP620 2SC5067 transistor 2SC5066 2sc5066 UPC2709 2SC5066 data sheet THN5601B THN5702F THN6601B THN6701B THN405Z THN420Z

2SC4290A

Abstract: 2SC4333 2SC3583 2SC4591 2SC 4318 M 2SC4870 2SC4643 2SC 4319 S S 2SC3584 2SC 4320 S S
-
OCR Scan
2SC3997 2SC4290A 2SC4293 2SC4423 2SC3873 2SC4424 2SC4333 j 4310 nec 4312 2SC3153 2SD1730 ZSC4Z91 2SD1731

marking R33

Abstract: marking R33 SMD Transistors IC SMD Type NPN Silicon Epitaxial Transistor 2SC3583 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 NF 1.2 dB TYP. @f = 1.0 GHz 1 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 1.Base 2.Emitter +0.1 0.38-0.1 0-0.1 +0.1 0.97-0.1 Ga 13 dB TYP. @f = 1.0 GHz 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO 20 V
Kexin
Original
marking R33 SMD marking R35 SMD R35 SMD Transistor NF marking TRANSISTOR SMD

f-30MHz

Abstract: 2SC3545 =20bA, 1GHz MAG (dB) 13.00 Vce=8V, Ic=20mA, 1GHz â'¢2SC3583 BS Vceo(V) 10 Icbo(íA) 1.00
-
OCR Scan
2SC3545 2SC3547A 2SC3547B f-30MHz

3892A

Abstract: 2SC3435 3904 / fâ T 2SC3606 2SC3583 2SC 3905 0 m 2SD1717 2SC 3906 " â¡ â'"A 2SC2713 2SC1622A
-
OCR Scan
2SD1849 2SC3884 2SC3885 RT1N140C DTC143TS 2SC2803 3892A 2SC3435 2sc3886 2SC4123 2SC4742 2SC4124 2SD1739

2SC3584

Abstract: ne3813 PACKAGE OUTLINE NE68100 00 (CHIP) NE68132 2SC3582 32 NE68133 2SC3583 33 NE68135 2SC3604 35 , (CHIP) NE68132 2SC3582 32 NE68133 2SC3583 33 NE68135 2SC3604 35 N 2£ E6813 SC358 37 7 I4
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OCR Scan
OOG144S NE68137 NE681 ne3813 10r 236 NE AND "micro-X" JE68

2SA1977

Abstract: 2SC3583 ­0.05 Equivalent NPN transistor is the 2SC3583. 2 0.95 High-speed switching characterstics
NEC
Original
2SA1977 617-70 MARKING T92 nec 561

2SK2396

Abstract: PC2763 ) 2SC3356(NE85633) 2SC3357(NE85634) 2SC3545(NE94433) 2SC3582(NE68132) 2SC3583(NE68133) 2SC3585(NE68033 , 2SC3587 2SC3583 2SC4227 2SC4094 2SC5012 2SC5007 2SC5433 2SC3585 2SC4228 2SC4095 2SC5013 2SC5008 2SC5434 , 2SC2586 2SC2762 2SC3218M 2SC3286M 2SC3355 2SC3356 2SC3357 2SC3545 2SC3582 2SC3583 2SC3585 2SC3587 2SC3603
NEC
Original
PC2763 PC3210 PC2711 2SK2396 pc1658 ne27283 upc2713 X13769XJ2V0CD00 PC8119T PC8120T PC8130TA PC8131TA PG175TA

2SC5743

Abstract: 2SC5600 2SC5747 2SC5615 2SC5650 2SC3583 2SC5433 2SC4228 2SC5008 2SC5434 2SC5191 2SC5193
NEC
Original
2SC5743 2SC5600 2SC5533 2SC5693 2SC5678 2sc5744 PC8190/8191KRX-IF PC8194/8195KRX-IF PG2124TH 10TSSOP PC8172TB PC8187TB

2SC3170

Abstract: 2sc3904 2SC4805 2SC 4868 = & 2SC4317 2SC3583 2SC4591 2SC4805 2SC 4869 H $ 2SC4320 2SC4095 2SC4900
-
OCR Scan
2SC3039 2SC3170 2SC3353 2SC4129 2SC3488 2SC3757 NEC 2SC3358 2sc3358 2SC3505 2SC4158 2SC4162 2SC4161
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