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2SC3419 Datasheet

Part Manufacturer Description PDF Type
2SC3419 Toshiba High-Frequency Switching Power Transistors (2SA Series); Surface Mount Type: N; Package: TO-126(IS); Number Of Pins: 3; Viewing Angle: taping unavailable; Publication Class: High Frequency Switching Power Transistor; Part Number: 2SA1356 Original
2SC3419 Motorola Motorola Semiconductor Data & Cross Reference Book Scan
2SC3419 N/A Transistor Shortform Datasheet & Cross References Scan
2SC3419 N/A Japanese Transistor Cross References (2S) Scan
2SC3419 N/A Cross Reference Datasheet Scan
2SC3419 N/A Catalog Scans - Shortform Datasheet Scan
2SC3419 N/A Catalog Scans - Shortform Datasheet Scan
2SC3419 N/A Scan
2SC3419 N/A The Transistor Manual (Japanese) 1993 Scan
2SC3419 N/A Transistor Substitution Data Book 1993 Scan
2SC3419 N/A Shortform Data and Cross References (Misc Datasheets) Scan
2SC3419 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
2SC3419 Toshiba Silicon NPN transistor for medium power amplifier applications Scan
2SC3419 Toshiba TO-126 Package Transistor Scan
2SC3419-O N/A Transistor Shortform Datasheet & Cross References Scan
2SC3419O Toshiba Silicon NPN Epitaxial Type Transistor Scan
2SC3419-Y N/A Transistor Shortform Datasheet & Cross References Scan
2SC3419Y Toshiba Silicon NPN Epitaxial Type Transistor Scan

2SC3419

Catalog Datasheet MFG & Type PDF Document Tags

C3419

Abstract: 2SC3419 2SC3419 NPN (PCT) 2SC3419 · : mm : VCE (sat) = 0.25 V () · : PC = 1.2 W (Ta = 25°C) · 2SA1356 (Ta = 25°C) · VCBO 40 , JEITA (//) 2-8H1A (/ ) : 0.82 g () ( ) () 1 2006-11-07 2SC3419 (Ta = , O: 70~140, Y: 120~240 C3419 () (: : ) No. 2 2006-11-07 2SC3419 , ) VCEO max 10 · 3 30 100 VCE (V) 2006-11-07 2SC3419 20070701-JA ·
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Original

2SC3421

Abstract: 2sd526 2SD1288 2 SC 49 4 V-"' X 2 2SD526 2SD1288 2SC 495 3t 2 2SC3419 2SC1162 2SC1226A 2SD1381 2SC 496 ->â'¢"' M £ 2SC3419 2SC1162 2SC1226 2SD1381 2SC 497 ^ M 2SC2235 2SD667A 2SC 498 ^ , 2SC3419 2SC 503 » X 3£ 2SC2235 2SC2061 2SC 504 f 5K S 2SC2235 2SC2061 2SC 505 X S
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OCR Scan
2SC46C 2SC2497A 2SC3423 2SD467 2SC2060 2SC4614 2SC3421 2SC1359 2SC2058 2SC1815 2SC460 2SC1318

c3419

Abstract: 2SC3419 2SC3419 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3419 Medium-Power Amplifier Applications. Unit: mm · Low saturation voltage: VCE (sat) = 0.25 V (typ.) · High , 2004-07-07 2SC3419 Marking Lot No. Characteristics indicator C3419 Part No. (or abbreviation , 2SC3419 IC ­ VCE hFE ­ IC 1000 12 10 Common emitter 8 6 600 4 400 VCE = 2 , 100 (V) 2004-07-07 2SC3419 RESTRICTIONS ON PRODUCT USE 030619EAA · The information
Toshiba
Original
MA61

2SC1815

Abstract: 2sk117 2 V 2SC1815 1 k 500 µF 470 2SC3419 2 k 4.2 ~70°C (2) 12 V, 1 A 02CZ6.8 , 2SC1815 150 30 80 1.2 k 2SC3419 0.01 µF 250 2SC521A ( 3) Vi 20~25 V 1Z16 4.3 , ~1.5 A) 500 µF 1.5 k 5 k 2SC3419 Vi = 28~38 V 2SC1815 × 2 2SC185 3.9 k ( 4 , 2SC1815 × 2 2SC1815 0.01 µF 4 k 1.5 k 5 k 2SC1815 200 2SC521A ( 4) 2SC3419 Vo
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Original
2SD867 3D4B41 2SA1015 2SK30ATM 2sk117 1D4B42 6D4B41 k 513 2SK30ATM 0 2SK117 02CZ5 AC100V

c3419

Abstract: 2SC3419 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3419 Medium-Power Amplifier Applications. Unit: mm · · · Low saturation voltage: VCE (sat) = 0.25 V (typ.) (IC = 500 mA, IB = , 2SC3419 Electrical Characteristics (Tc = 25°C) Characteristics Collector cut-off current Emitter cut-off , )-free finish. Part No. (or abbreviation code) 2 2006-11-09 2SC3419 IC ­ VCE 1000 1000 , ) Collector-emitter voltage VCE (V) 3 2006-11-09 2SC3419 RESTRICTIONS ON PRODUCT USE · The
Toshiba
Original

c3419

Abstract: 2SC3419 2SC3419 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3419 Medium-Power Amplifier Applications. Unit: mm · Low saturation voltage: VCE (sat) = 0.25 V (typ.) · High , , etc). 1 2006-11-09 2SC3419 Electrical Characteristics (Tc = 25°C) Characteristics , 2SC3419 IC ­ VCE hFE ­ IC 1000 20 800 12 Common emitter Tc = 25°C 10 Common , 3 VCEO max 10 30 100 Collector-emitter voltage VCE (V) 3 2006-11-09 2SC3419
Toshiba
Original

2SA1356

Abstract: 2SC3419 TOSHIBA 2SC3419 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) 2 S C 3 4 1 9 MEDIUM POWER AMPLIFIER APPLICATIONS. â'¢ Low Saturation Voltage : VcE(sat) = 0-25V (Typ.) (IC = 500mA, IB = 50mA) â'¢ High Collector Power Dissipation : Pç; = 1.2W (Ta = 25°C) â'¢ Complementary to , TOSHIBA 2SC3419 IC - VCE hFE - IC 1000 800 600 400 200 COMMON EMITTER Tc = 25 , 2001-05-24 TOSHIBA 2SC3419 RESTRICTIONS ON PRODUCT USE _000707E â'¢ TOSHIBA is continually working to
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OCR Scan
Abstract: 2SC3419 TOSHIBA 2SC3419 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) Unit in mm M EDIUM PO W ER AM PLIFIER APPLICATIONS. â'¢ â'¢ â'¢ m ä" ìli 1.0MAX. M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Ta = 25°C Collector Power Dissipation , 1997 09-01 - 1/2 2SC3419 TOSHIBA IC - VCE hpE - IC COLLECTOR CURRENT Iç (mA) Ic -
OCR Scan
961001EAA2

2SC1390

Abstract: 2SC1130 2SC4485 2SC3419 2SC3419 2SD1624 2SC1624 2SCÎ624 2SC1624 2SD821 2SD821 2SC732 2SC2240 2SC941 2SC790(LB
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OCR Scan
2SC1390 2SC1252 2SC2999 2SC603 2SC1215 2SC1010 2SC1130 2SD331 2sc 1416 y 2SC1268 2SC1387 2SC1393 2SC1394 2SC1395 2SC1396

2SC3419

Abstract: 2SC3419 FEATURES: SILICON NPN EPITAXIAL TYPE MEDIMUM POWER AMPLIFIER APPLICATIONS. Unit in mm 03.i±ai . Low Saturation Voltage : VcE(sat)=0.25V(Typ.) (Ic=500mA, lB=50mA) . High Collector Power Dissipation : Pc=1.2W (Ta=25°C) . Complementary to 2SA1356 2 1.9 MAX. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage , 2SC3419
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OCR Scan

b1375

Abstract: 2sk270a 2SD880, D2012 2SD526, D1408 2SC3419 2SC3419 2SC3419 2SC3419 2SC2235 2SC2235 2SC2229 2SC2229 2SC3419 , 3SK114 3SK 195 3S K 1 15 - - 3SK121 - - _ 2SC3419 2SC3419 2SA1356 1139 T ype No. BD136(NP
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OCR Scan
MG15G1AL2 S-AU15 b1375 2sk270a 2SK150A 2SA1051b MG50G2CL1 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790

2SC1216

Abstract: sc 1365 - 112 - * i * * * * * * * * * * * * t ♦ * * * * * m. « Type No. tt S Manuf. H # sanyo * a toshiba b m nec b iL hitachi g ± a fujitsu fé T matsushita z m mitsubishi â¡ â'" A rohm 2 sc 1343 (h) b iL 2sd425 2sc 1344 B iL 2sc1570 2sc732tm 2sc1842 2sc2634 2sc2320l 2sc1740ln 2sc 1345 b iL 2sc1570 2sc732tm 2sc1843 2sc2634 2sc2320l 2sc1740ln 2sc 1345k b iL 2sc1740 2sc 1346 fé t 2sd734 2sc3419 2sc2001 2sc1162 2sc1317 2sc2060 2sc 1347 fé t 2sc2274 2sc3419 2sc1162
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OCR Scan
2SC1216 sc 1365 2SC1006 2SC710 2SC945 2SC1740LN
Abstract: TOSHIBA TOSHIBA TRANSISTOR M E D IU M POWER AMPLIFIER APPLICATIONS. 2SC3419 2SC3419 SILICON NPN EPITAXIAL TYPE (PCT PROCESS) Unit in mm 8.3 MAX. S.8 · · · Low Saturation Voltage : VCE (sat)= 0.25V (Typ.) (Ic = 500mA, Ig = 50mA) High Collector Power Dissipation : P q = 1.2W (Ta = 25°C) Complementary to 2SA1356 SYMBOL VCBO VCEO Ve b o 1C 53.1 ± 0 .1 1.0M AX. 1.9M A X. M A X IM U M , TOSHIBA 2SC3419 IC - VCE hFE - IC C OLLECTOR CURRENT CO LLECTO R-EM ITTER VO LTAG E Vqe -
OCR Scan

2SC3419

Abstract: 2SA1356 TOSHIBA 2SC3419 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) 2 S C 3 4 1 9 MEDIUM POWER AMPLIFIER APPLICATIONS. â'¢ Low Saturation Voltage : VcE(sat) = 0-25V (Typ.) (IC = 500mA, IB = 50mA) â'¢ High Collector Power Dissipation : Pç; = 1.2W (Ta = 25°C) â'¢ Complementary to 2SA1356 , â'" 10 â'" pF (Note) : hFE(1) Classification O : 70-140, Y : 120-240 1 2001-11-05 TOSHIBA 2SC3419 IC , TEMPERATURE. 3~ 1 3 10 30 COLLECTOR-EMITTER VOLTAGE VQE (V) VCEO MAX. 100 2 2001-11-05 TOSHIBA 2SC3419
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OCR Scan

2SC2320

Abstract: 2SD786 2SC2999 2SC2999 2SC382TM 2SC3419 2SC3419 2SC2562 2SC1815 2SC1815 2SC2120 2SC1627 2SC380TM 2SC380TM 2SC945
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OCR Scan
2SC1818 2SC2516 2SC2274 2SC2320 2SD1203 2SD786 2SC4280 2sc1832 2SC 1827 F 2SC1819 2SC1820 2SC1822 2SC1823 2SC1824

2SC3419

Abstract: SILICON NPN EPITAXIAL TYPE (PCT PROCESS) 2SC3419 M E D IU M PO W ER AMPLIFIER APPLICATIONS. · · · Low Saturation Voltage : VCE (sat) = 0-25V (Typ.) (Ic = 500mA, lB = 50mA) High Collector Power Dissipation : P q = 1.2W (Ta = 25°C) Complementary to 2SA1356 SYMBOL VCBO VCEO Ve b o !C Iß PC Tj Tstg RATING 40 40 5 800 80 1.2 5 150 -5 5 -1 5 0 UNIT V V V mA mA W °C °C W eight : 0.82g MIN. TYP. MAX , , f=lM H z Cob O : 70-140, Y : 120~240 V V MHz pF 553 2SC3419 - V ce hFE - lc c
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OCR Scan

mg75n2ys40

Abstract: MG15N6ES42 525 [ 10 ] (6) 2SC495 2SC3419 2SC524 2SC3421 2SC780 2SC495 (NP) 2SC3419 2SC525 2SC3421 2SC780A 2SC496 2SC3419 2SC547 2SC780A (G) 2SC496 (NP) 2SC3419 2SC548 2SC780AK 2SC497 2SC2235 2SC549 , 2SC501 2SC2638 2SC2639 2SC553 2SC784TM 2SC1923 2SC502 2SC3419 2SC554 , BD135NP 2SC3419 GT15H101 GT15J101 BD136NP 2SA1356 2SK527 GT15H102 GT15J101
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Original
1S1658 mg75n2ys40 MG15N6ES42 MG150n2ys40 MG8N6ES42 mg75j2ys40 MG30G1BL2 02BZ2 1S2092 1SZ5759 02CZ2 1S2094 2N3055

2SC3419

Abstract: 2SA1356 TOSHIBA 2SC3419 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) 2 S C 3 4 1 9 MEDIUM POWER AMPLIFIER APPLICATIONS. â'¢ Low Saturation Voltage : VCE (sat) = 0.25V (Typ.) (IC = 500mA, IB = 50mA) â'¢ High Collector Power Dissipation : Pç; = 1.2W (Ta = 25°C) â'¢ Complementary to 2SA1356 MAXIMUM RATINGS (Ta = 25°C) Unit in mm CHARACTERISTIC SYMBOL RATING UNIT Collector-Base , TOSHIBA Semiconductor Reliability Handbook. 1997-09-01 1/2 TOSHIBA 2SC3419 IC - VCE hFE - IC 1000
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OCR Scan

2SK 150A

Abstract: mg100g1al2 -G -T M 2 S C 3 8 8 A -T M 2SC 2717 2 S C 3 8 8 A -T M 2S C 2717 2SC3419 2SC2235 2SC2235 2SC2229 2SC2229 2SC3419 2SC3423 2SC2233 2SC2120 2SC2120 2SC2120 2SC2120 2SC3421 2SC3421 2SC2242 2SC2242 2SC2242 , 785TM 2SC3419 2SC3419 2SC3419 1030 T y p e No. 2SC786 2SC787 2SC788 2SC789 2SC790 2SC791 , - - 2SC3419 2SC3419 2SA1356 1034 T y p e No. B D 136(N P) BD137 BD 137(N P) BD138 BD
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OCR Scan
2SA28 2SK 150A mg100g1al2 2SC2461 B 2SD1365 2sk30 C366G 2N3791 2N3792 2N4340 2N4340S 2N4391 2N4392

2SA135

Abstract: 2SA1356 TOSHIBA 2SC3419 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) 2 S C 3 4 1 9 MEDIUM POWER AMPLIFIER APPLICATIONS. â'¢ Low Saturation Voltage : VCE(sat) = 0-25V (Typ.) (IC = 500mA, IB = 50mA) â'¢ High Collector Power Dissipation : Pc = 1.2W (Ta = 25°C) â'¢ Complementary to 2SA1356 MAXIMUM RATINGS (Ta=25°C) Unit in mm CHARACTERISTIC SYMBOL RATING UNIT Collector-Base , ICminer.com Electronic-Library Service CopyRight 2003 TOSHIBA 2SC3419 IC - VCE hFE - IC H Ã" H C£ m D o
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OCR Scan
2SA135

3182N

Abstract: 2sd4242 TOSHIBA 2SC3419 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) 2 S C 3 4 1 9 MEDIUM POWER AMPLIFIER APPLICATIONS. â'¢ Low Saturation Voltage : VCE (sat) = 0.25V (Typ.) (IC = 500mA, IB = 50mA) â'¢ High Collector Power Dissipation : Pç; = 1.2W (Ta = 25°C) â'¢ Complementary to 2SA1356 MAXIMUM RATINGS (Ta = 25°C) Unit in mm CHARACTERISTIC SYMBOL RATING UNIT Collector-Base , TOSHIBA Semiconductor Reliability Handbook. 1997-09-01 1/2 TOSHIBA 2SC3419 IC - VCE hFE - IC 1000
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OCR Scan
3182N 2sd4242 2482S 2sc 1091 A1015 A 1712 2SC387A 2SC2347 2SC2101 2SC2181 2SC2204 2SC2380
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