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NE85634-T1-RF-A California Eastern Laboratories (CEL) SAME AS 2SC3357 SAME AS 2SC3357 visit Digikey Buy
2SC3357-A California Eastern Laboratories (CEL) RF TRANSISTOR NPN SOT-89 visit Digikey Buy
2SC3357-T1-A California Eastern Laboratories (CEL) RF TRANSISTOR NPN SOT-89 visit Digikey Buy
2SC3357-T1-RF-A California Eastern Laboratories (CEL) SAME AS NE85634 NPN SILICON MEDI visit Digikey Buy

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2SC3357 Datasheet

Part Manufacturer Description PDF Type
2SC3357 Kexin NPN Silicon RF Transistor Original
2SC3357 NEC Semiconductor Selection Guide 1995 Original
2SC3357 NEC NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD Original
2SC3357 NEC Semiconductor Selection Guide Original
2SC3357 TY Semiconductor NPN Silicon RF Transistor - SOT-89 Original
2SC3357 California Eastern Laboratories UHF/Microwave NPN BJT Scan
2SC3357 N/A Japanese Transistor Cross References (2S) Scan
2SC3357 N/A Semiconductor Master Cross Reference Guide Scan
2SC3357 N/A The Transistor Manual (Japanese) 1993 Scan
2SC3357 N/A Transistor Substitution Data Book 1993 Scan
2SC3357 N/A High Frequency Device Data Book (Japanese) Scan
2SC3357 N/A Shortform Data and Cross References (Misc Datasheets) Scan
2SC3357RE NEC NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD Original
2SC3357RE NEC NPN Epitaxial Silicon RF Transistor for High-Frequency Low-Noise Amplification 3-Pin Power Minimold Original
2SC3357RE-T1 NEC NPN Epitaxial Silicon RF Transistor for High-Frequency Low-Noise Amplification 3-Pin Power Minimold Original
2SC3357RF NEC NPN Epitaxial Silicon RF Transistor for High-Frequency Low-Noise Amplification 3-Pin Power Minimold Original
2SC3357RF NEC NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD Original
2SC3357RH NEC NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD Original
2SC3357RH NEC NPN Epitaxial Silicon RF Transistor for High-Frequency Low-Noise Amplification 3-Pin Power Minimold Original
2SC3357RH-T1 NEC NPN Epitaxial Silicon RF Transistor for High-Frequency Low-Noise Amplification 3-Pin Power Minimold Original
Showing first 20 results.

2SC3357

Catalog Datasheet MFG & Type PDF Document Tags

2SC3357

Abstract: 2sc3357t1 2SC3357 25 12 mm 2SC3357-T1 1 k / 25 TA = 25°C ° VCBO , NPN RF NPN Silicon RF Transistor 2SC3357 NPN RF 3 NF = 1.1 dB TYP., Ga = 7.5 dB , Devices 1986, 2003 2SC3357 Rth (j-a) 62.5 °C/W 16 cm2 × 0.7 mm , RH 50100 80160 125250 PU10211JJ01V0DS 2SC3357 TA = 25°C ° vs. vs. 2 f = , (mA) PU10211JJ01V0DS 3 2SC3357 vs. VCE = 10 V f = 1 GHz 6 NF (dB) IM2, IM3 vs
NEC
Original
2sc3357t1 2SC335 transistor 2SC3357 P10357JJ5V0DS00 L03-3798-6372 X03-3798-6783 X044-435-1918

nec 2501

Abstract: ic nec 2501 minimold package ORDERING INFORMATION Part Number Quantity Supplying Form 2SC3357 25 pcs (Non reel) · 12 mm wide embossed taping 2SC3357-T1 1 kpcs/reel · Collector face the , DATA SHEET NPN SILICON RF TRANSISTOR 2SC3357 NPN EPITAXIAL SILICON RF TRANSISTOR FOR , Semiconductor Devices 1985, 2003 2SC3357 THERMAL RESISTANCE Parameter Symbol Junction to Ambient , 2SC3357 TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified) ° REVERSE TRANSFER
NEC
Original
nec 2501 ic nec 2501 marking 2sc3357 nec RF package SOT89 sot89 TRANSISTOR MARKING AV PU10211EJ01V0DS

2SC3357-T1-A

Abstract: ) â'¢ Collector face the perforation side of the tape 2SC3357-A NE85634-T1-A 2SC3357-T1-A , NPN SILICON RF TRANSISTOR NE85634 / 2SC3357 NPN EPITAXIAL SILICON RF TRANSISTOR FOR , major revised points. NE85634 / 2SC3357 THERMAL RESISTANCE Parameter Symbol Junction to , 80 to 160 125 to 250 Data Sheet PU10211EJ01V0DS NE85634 / 2SC3357 TYPICAL CHARACTERISTICS (T A = +25ï'°C, unless otherwise specified) Data Sheet PU10211EJ01V0DS 3 NE85634 / 2SC3357
California Eastern Laboratories
Original
NE85634-A

2SC3357

Abstract: ic 0620 DATA SHEET SILICON TRANSISTOR 2SC3357 NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC3357 is an NPN silicon epitaxial transistor designed for (Unit , 1997 N Printed in Japan © 1985 2SC3357 ELECTRICAL CHARACTERISTICS (TA = 25 °C , 2SC3357 DC CURRENT GAIN vs. COLLECTOR CURRENT INSERTION GAIN vs. COLLECTOR CURRENT 200 15 , f = 2 × 200 - 190 MHz 20 30 40 50 60 70 IC-Collector Current-mA 3 2SC3357
NEC
Original
ic 0620 RF Transistor s-parameter vhf P10357EJ4V1DS00

6852 d TRANSISTOR

Abstract: 2SC3357 DATA SHEET SILICON TRANSISTOR 2SC3357 NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD DESCRIPTION The 2SC3357 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF , Figure SYM BO L Ic B O 2SC3357 MIN. TYP. MAX. 1.0 1.0 UNIT fiA /jA T EST CO NDITIONS , CURRENT GAIN vs. COLLECTOR CURRENT 200 V ce = 10 V 2SC3357 INSERTION GAIN vs. COLLECTOR CURRENT , 0.398 0.399 0.414 0.440 0.461 0.479 0.499 0.515 0.537 2SC3357 Z S 22 -21.1 -2 5 .3 -2 6 .9 -2 8 .9
-
OCR Scan
6852 d TRANSISTOR P10357EJ4V1D

6852 d TRANSISTOR

Abstract: 2SC3357 DATA SHEET SILICON TRANSISTOR 2SC3357 NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD DESCRIPTION T h e 2SC3357 is an NPN silicon ep itaxia l tra n s is to r de sig n e d for low noise a m p , Insertion Power Gain Noise Figure Noise Figure 1 2SC3357 SYMBOL Ic B O MIN. TYP. MAX. 1.0 , = 10 V 15 2SC3357 INSERTION GAIN vs. COLLECTOR CURRENT V ce = 10 V f = 1.0 GHz Iife-D C , 2SC3357 Z S 12 74.5 77.4 77.5 78.0 78.4 75.7 71.7 73.1 71.3 71.8 I S22 I 0.444 0.398 0.399 0.414
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OCR Scan
DA RH SOT-89 Transistor ge 718 nec 765 P10357EJ4V1

2SC3357-T1

Abstract: 2SC3357 minimold package ORDERING INFORMATION Part Number Quantity Supplying Form 2SC3357 25 pcs (Non reel) · 12 mm wide embossed taping 2SC3357-T1 1 kpcs/reel · Collector face the , . DATA SHEET NPN SILICON RF TRANSISTOR 2SC3357 NPN EPITAXIAL SILICON RF TRANSISTOR FOR , Semiconductor Devices 1985, 2003 2SC3357 THERMAL RESISTANCE Parameter Symbol Junction to Ambient , 2SC3357 TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified) ° REVERSE TRANSFER
NEC
Original

6852 d TRANSISTOR

Abstract: 2SC3357 SILICON TRANSISTOR 2SC3357 N P N S IL IC O N E P IT A X IA L T R A N S IS T O R PO W E R M IN I M O L D P A C K A G E D IM E N S IO N S in millimeters D E S C R IP T IO N The 2SC3357 is an N P N silicon epitaxial transistor designed for low noise amplifier at V H F , U H F and C A T V , Capacitance-pF 3s 2 z 3 z m5 2SC3357 N O IS E F IG U R E v&. C O LLEC TO R C U R R E N T IN T E R M O D , -2 7 .1 - 3 1 .9 - 3 2 .3 - 3 5 .7 - 3 5 .3 - 3 8 .4 - 3 6 .3 2.-77 2SC3357 S-P A R A M E T
-
OCR Scan
3zm-5

2N5715

Abstract: nec RF package SOT89 ~Iect 10 15 20 2SC1255 2SC3357 2SC3357 2SC3787 BFS89 BFS89 BFS89 2SCl168 2SC1569 2SC1569
Advanced Semiconductor
Original
2SC3601E BSV52R S02369A 2SC3598E 2N5715 2N4262 BF844 2n4073 acrian inc 2SC515A B0115 2N4073 2SC3601C 2SC36010

2SC4159

Abstract: 2SC3358 2SC 3301â" Ã" 2 2SC3607 2SC3357 2SC4422 2SC 3302 y 2 2SC3358 2SC3126 2SC2844 2SC 3303 / S
-
OCR Scan
2SC3689 2SD801 2SD1459 2SD1587 2SD1264 2SD1348 2SC4159 2SC3312 2SC2839 2SD641 2SC 3298 2sc2724 2SDI763A

2SC3368

Abstract: 2SC3356 to 92 2SC3356 HS HF LN A 20 12 0.1 0. 2 1 10 50 300 10 0.02 2SC3357 HS HF LN A 20 12 0.1 2 1 10 50 300 10 , SCâ'"62 ECB 2SC3357 7000* 10 0.02 1 NF max 2dB f=lGHz (f al i) EBEC 2SC3358 160* 10 0.01 0.15
-
OCR Scan
2SC3322 2SC3324 2SC3325 2SC3326 2SC3327 2SC3328 2SC3368 2SC3356 to 92 2SC3371 2sc3325 cross 2SA1317 2sc3355

smd rf transistor marking

Abstract: 2SC3357 SMD IC Transistors SMD Type NPN Silicon RF Transistor 2SC3357 Features Low Noise and High Gain NF = 1.1 dB TYP., Ga = 7.5 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V, IC = 40 mA, f = 1.0 GHz High power gain : MAG = 10 dB TYP. @ IC = 40 mA, f = 1 GHz Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO
Kexin
Original
smd rf transistor marking 2SC3357 SMD smd transistor marking RE smd transistor marking GA 10 ghz transistor transistor smd marking RE

2SC3170

Abstract: 2sc3904 2SC3357 2SC4422 2SC 3608 2SC3358 2SC3791 2SC 3603 H 2 2SC486S 2SC40S3 2SC4127 2SC 3610
-
OCR Scan
2SC3039 2SC3170 2SC3353 2SC4129 2SC3488 2SC3757 2sc3904 NEC 2SC3358 2SC3505 2SC4158 2SC4162 2SC4161

2SC4470

Abstract: 4892 2SC4900 2SC3829 2SC 4866 = m 2SC3607 2SC3357 2SC4643 2SC 4867 = m 2SC4321 2SC4227 2SC4901
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OCR Scan
2SC3937 2SC4470 2SC3704 2SC3609 2SC4093 2SC3585 4892 2sc3828 2sc3613 2SC4394 2SC4226 2SC49 2SC4904

transistor 2SC5066

Abstract: BFP620 2SC3357 2SC5432 2SC3356 2SC5093 2SC5086 2SC5086FT 2SC5084 2SC4995 2SC5141 2SC4988 2SC5758
-
Original
NESG250134 NESG260234 2SC5508 BFP450 BFP620 2SC5067 transistor 2SC5066 2sc5066 UPC2709 2SC5066 data sheet THN5601B THN5702F THN6601B THN6701B THN405Z THN420Z
Abstract: Transistors IC SMD Type Product specification 2SC3357 Features Low Noise and High Gain NF = 1.1 dB TYP., Ga = 7.5 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V, IC = 40 mA, f = 1.0 GHz High power gain : MAG = 10 dB TYP. @ IC = 40 mA, f = 1 GHz Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO TY Semiconductor
Original

4407

Abstract: 2SC3885A 2SC4099 2SC 4421 fé T 2SC4160 2SC3309 2SC3570 2SC 4422 B iL 2SC4859 2SC3607 2SC3357 2SC 4437
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OCR Scan
2SC4253 2SC4247 2SC4186 2SC4410 2SC4245 2SC4571 4407 2SC3885A on 4409 2SC2320 4463 B 2SC4453 2SC4179 2SC3931 2SC4154 2SC4100

KA 3264

Abstract: 2SC3136 2SC4115S 2SC 3268 Ã" S 2SC3357 2SC3338 2SC 3269 ' â¡ -A 2SC2271 2SC2482 2SC2610 2SC1573 2SC3249
-
OCR Scan
2SC2979 2SC3306 2SC3440 2SD965 2SC2456 2SC3136 KA 3264 2SC3259 2SD689 K 3264 2sc2371 2SC3508 2SC2555 2SD1457 2SC3509

ne666

Abstract: NEC NE85635 Y P M AX 7.0 1.4 2.0 NE65634 2SC3357 34 MIN TYP 65 1.4 2.1 9 1Q 11.5 95 7 120 300 1.0 1.0 1.0 2CO
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OCR Scan
NE856 2SC33 NE85635 ne666 NEC NE85635 epitaxial micro-x NE85600 ne85630 NE35600 UPA401T UPA810 NE66619 NE85630

IC 4435

Abstract: 2SC3357 , IC = 20 mA, f = 1 GHz 2SC3357 4 2SC5336 25 2SC5336-T1 1 k / 12
NEC
Original
IC 4435 P10938JJ2V0DS00 P10938JJ2V0DS

NEC NE85635

Abstract: 2SC3356 to 92 NE85600 00 (CHIP) NE85632 2SC3355 32 NE85633 2SC3356 33 NE85634 2SC3357 34 NE85635 2SC3603 35 , NUMBER PACKAGE OUTLINE NE85600 00 (CHIP) NE85632 2SC3355 32 NE85633 2SC3356 33 NE85634 2SC3357 34
-
OCR Scan
NEC 2501 MF 216 NE85834 TRANSISTOR NEC B77 sot23 41 1AMIL NE85635/CEL
Showing first 20 results.