2SC3198 - Datasheet Archive

 

NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four

 

ST 2SC3198 2SC3198 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25) Symbol Value Unit Collector Base Voltage VCBO 60 V Collector Emitter Voltage VCEO 50 V Emitter Base Voltage VEBO 5 V Collector Current IC 150 mA Base Current IB 50 mA Ptot 500 mW Junction Temperature Tj 125 O Storage Temperature Range TS -55 to +125 O Power Dissipation C C G S P FORM A IS AVAILABLE SEMTECH ELECTRONICS LTD. ® (Subsidiary of Semtech International Holdings Limited, acompany listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 07/12/2002 ST 2SC3198 2SC3198 Characteristics at Tamb=25 OC Symbol Min. Typ. Max. Unit Current Gain Group O hFE 70 - 140 - Y hFE 120 - 240 - G hFE 200 - 400 - L hFE 350 - 700 - hFE 25 100 - - VCE(sat) - 0.1 0.25 V VBE(sat) - - 1 V ICBO - - 0.1 µA IEBO - - 0.1 µA fT 80 - - MHz COB - 2 3.5 pF Rbb' - 50 - NF - 1 10 dB DC Current Gain at VCE=6V, IC=2mA at VCE=6V, IC=150mA Collector Emitter Saturation Voltage at IC=100mA, IB=10mA Base Emitter Saturation Voltage at IC=100mA, IB=10mA Collector Cutoff Current at VCB=60V Emitter Cutoff Current at VEB=5V Transition Frequency at VCE=10V, IE=1mA Collector Output Capacitance at VCB=10V, f=1MHz Base Intrinsic Resistance at VCB=10V IC=1mA, f=30MHz Noise Figure at VCE=6V, IC=0.1Ma at f=1KHz, RG=10K G S P FORM A IS AVAILABLE SEMTECH ELECTRONICS LTD. ® (Subsidiary of Semtech International Holdings Limited, acompany listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 07/12/2002