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Part : 2SC3072 Supplier : Vishay Intertechnology Manufacturer : Bristol Electronics Stock : 400 Best Price : - Price Each : -
Part : 2SC3072-B(Q) Supplier : Toshiba Manufacturer : Chip1Stop Stock : 350 Best Price : $3.71 Price Each : $3.71
Part : 2SC3072-B(T6L1,NQ) Supplier : Toshiba Manufacturer : Chip1Stop Stock : 1,750 Best Price : $3.64 Price Each : $3.64
Part : 2SC3072-C(Q) Supplier : Toshiba Manufacturer : Chip1Stop Stock : 300 Best Price : $3.71 Price Each : $3.71
Part : 2SC3072-C(T6L1,NQ) Supplier : Toshiba Manufacturer : Chip1Stop Stock : 1,450 Best Price : $3.45 Price Each : $3.45
Part : 2SC3072-C(TE16L) Supplier : Toshiba Manufacturer : Chip1Stop Stock : 2 Best Price : $0.3760 Price Each : $0.3760
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2SC3072 Datasheet

Part Manufacturer Description PDF Type
2SC3072 Kexin Silicon NPN Epitaxial Original
2SC3072 Toshiba Silicon NPN Transistor Original
2SC3072 N/A Transistor Shortform Datasheet & Cross References Scan
2SC3072 N/A Japanese Transistor Cross References (2S) Scan
2SC3072 N/A Catalog Scans - Shortform Datasheet Scan
2SC3072 N/A Catalog Scans - Shortform Datasheet Scan
2SC3072 N/A Scan
2SC3072 N/A The Transistor Manual (Japanese) 1993 Scan
2SC3072 N/A Transistor Substitution Data Book 1993 Scan
2SC3072 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
2SC3072 N/A Shortform Data and Cross References (Misc Datasheets) Scan
2SC3072 Toshiba Silicon NPN transistor for strobe flash applications and medium power amplifier applications Scan
2SC3072 Toshiba SILICON NPN EPITAXIAL TYPE (PCT PROCESS) TRANSISTOR Scan
2SC3072(2-7B1A) Toshiba 2SC3072 - TRANSISTOR 5000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-7B1A, 3 PIN, BIP General Purpose Small Signal Original
2SC3072(2-7B2A) Toshiba 2SC3072 - TRANSISTOR 5000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-7B2A, 3 PIN, BIP General Purpose Small Signal Original
2SC3072(2-7J1A) Toshiba 2SC3072 - TRANSISTOR 5000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-7J1A, 3 PIN, BIP General Purpose Small Signal Original
2SC3072A Toshiba 2SC3072 - TRANSISTOR 5000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-7B1A, 3 PIN, BIP General Purpose Small Signal Original
2SC3072A N/A Transistor Shortform Datasheet & Cross References Scan
2SC3072A Toshiba Silicon NPN Transistor Scan
2SC3072-A(2-7B1A) Toshiba 2SC3072 - TRANSISTOR 5000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-7B1A, 3 PIN, BIP General Purpose Small Signal Original
Showing first 20 results.

2SC3072

Catalog Datasheet MFG & Type PDF Document Tags

c3072

Abstract: 2SC3072 2SC3072 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3072 Strobe Flash Applications Medium Power Amplifier Applications · Unit: mm High DC current gain : hFE = 140 to 450 , (typ.) 1 2005-02-01 2SC3072 Electrical Characteristics (Ta = 25°C) Characteristics , 2005-02-01 2SC3072 IC ­ VBE IC ­ VCE 8 10 Common emitter VCE = 2 V IC (A) 200 8 , VCE 30 (V) 2005-02-01 2SC3072 RESTRICTIONS ON PRODUCT USE 030619EAA · The
Toshiba
Original
c3072 c3072 npn

C3072

Abstract: 2SC3072 2SC3072 NPN (PCT) 2SC3072 · : mm : hFE = 140~450 (VCE = 2 V, IC = 0.5 A) : hFE = 70 () (VCE = 2 V, IC = 4 A) · : VCE (sat) = 1.0 V () (IC = 4 A, IB = 0.1 A) · , : (//) ( / ) () () 1 2010-02-05 2SC3072 (Ta = 25 , 2002/95/EC) 2 2010-02-05 2SC3072 IC ­ VBE IC ­ VCE 10 8 VCE = 2 V 8 (A , 2SC3072 · · · · "" · · · ·
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Original

2sc3072

Abstract: MAX12001 TO SH IBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) 2SC3072 2SC3072 STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS (A) 6.8MAX., 5.210.2 P in Unit in mm rI 'l 0.6MAX. - t f - · · · High DC Current Gain : hpE = 140~450 (\Tn-n = 9. V T n , .) 1 2001 11-05 - TO SH IBA 2SC3072 ELECTRICAL CHARACTERISTICS (Te = 25 , 11-05 - 2SC3072 TO SH IBA 2SC3072 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is
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OCR Scan
MAX12001 95MAX 95IV1AX

2SC3072

Abstract: C3072 2SC3072 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3072 Strobe Flash Applications Medium Power Amplifier Applications · Unit: mm High DC current gain : hFE = 140 to 450 , report and estimated failure rate, etc). 1 2010-02-05 2SC3072 Electrical Characteristics (Ta = , substances in electrical and electronic equipment. 2 2010-02-05 2SC3072 IC ­ VBE IC ­ VCE 10 , 2SC3072 RESTRICTIONS ON PRODUCT USE · Toshiba Corporation, and its subsidiaries and affiliates
Toshiba
Original

C3072

Abstract: c3072 npn 2SC3072 NPN (PCT) 2SC3072 · : mm : hFE = 140~450 (VCE = 2 V, IC = 0.5 A) : hFE = 70 () (VCE = 2 V, IC = 4 A) · : VCE (sat) = 1.0 V () (IC = 4 A, IB = 0.1 A) · , : (//) (/ ) ( ) () JEDEC JEITA 2-7J1A : 0.36 g () 1 2006-11-07 2SC3072 (Ta = 25 , 2006-11-07 2SC3072 IC ­ VBE IC ­ VCE 10 8 VCE = 2 V (A) 200 8 150 6 IC , 2SC3072 20070701-JA · · " " · · · RoHS RoHS · 4
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transistor LT 5210

Abstract: TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) 2SC3072 2SC3072 STROBE FLASH APPLICATIONS M EDIUM PO W ER AM PLIFIER APPLICATIONS (A ) 6.8M A X 5.2 ±0.2 t Unit in mm 0.6 M A X . · · · High DC Current Gain : hFE = 70 (Min.) (VCE = 2 V, IC = 4A ) Low Collector , it h o u t n otice. # # 1999 03-11 1/3 - TOSHIBA 2SC3072 ELECTRICAL , 1999 03-11 - 2SC3072 3/3
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OCR Scan
transistor LT 5210 001EA
Abstract: T O SH IB A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) 2SC3072 STROBE FLASH APPLICATIONS. 2SC3072 MEDIUM POWER AMPLIFIER APPLICATIONS. · · · High DC Current Gain : hpE -140~450 (Vç e = 2V, I ç = 0.5A) h p E -7 0 (Min.) (Vç e = 2V, I ç = 4A) Low Collector Saturation Voltage , . 1997 09-01 1/3 - T O SH IB A 2SC3072 ELECTRICAL CHARACTERISTICS (Ta = 25 , pF 70 - 1.0 1.5 - - 1997 09-01 2/3 - TO SH IB A 2SC3072 IC - VCE -
OCR Scan
Abstract: 2SC3072 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3072 Strobe Flash Applications Medium Power Amplifier Applications â'¢ Unit: mm High DC current gain : hFE = 140 to 450 , '• TOSHIBA 2-7J1A Weight: 0.36 g (typ.) 1 2004-07-07 2SC3072 Electrical Characteristics (Ta = , 2SC3072 IC â'" VBE IC â'" VCE 8 10 Common emitter VCE = 2 V IC (A) 200 8 150 , 3 Collector-emitter voltage 3 10 VCE 30 (V) 2004-07-07 2SC3072 Toshiba
Original

c3072

Abstract: c3072 npn 2SC3072 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3072 Strobe Flash Applications Medium Power Amplifier Applications · Unit: mm High DC current gain : hFE = 140 to 450 , Weight: 0.36 g (typ.) 1 2002-07-23 2SC3072 Electrical Characteristics (Ta = 25 , 2002-07-23 2SC3072 IC ­ VBE IC ­ VCE 10 8 VCE = 2 V (A) 150 6 IC 100 6 , Collector-emitter voltage 3 10 VCE 30 (V) 2002-07-23 2SC3072 RESTRICTIONS ON PRODUCT USE
Toshiba
Original

c3072 npn

Abstract: c3072 2SC3072 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3072 Strobe Flash Applications Medium Power Amplifier Applications · High DC current gain : hFE = 140 to 450 (VCE = 2 V, IC = , 2SC3072 Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off , manufacture: last decimal digit of the year of manufacture 2 2002-07-23 2SC3072 IC ­ VCE 10 , temperature Ta (°C) Collector-emitter voltage VCE (V) 3 2002-07-23 2SC3072 RESTRICTIONS ON
Toshiba
Original
Abstract: TOSHIBA 2SC3072 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) 2SC3072 Unit in mm STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS â'¢ â'¢ â'¢ High DC Current Gain : hpg = 140~450 (Vc e = 2 V, IC = 0.5 A) hFE = 70 (Min.) (Vc e = 2 V, Ic = 4A) Low Collector Saturation Voltage : VCE (sat) = 1-0 V (Max.) (IC = 4 A, IB = 0.1 A) High Power Dissipation , change without notice. 1999 06-16 1/3 - TOSHIBA 2SC3072 ELECTRICAL CHARACTERISTICS (Ta = 25Â -
OCR Scan
961001EAA1

2SC3072

Abstract: TOSHIBA 2SC3072 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) 2 S C 3 0 7 2 STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS â'¢ High DC Current Gain : hFE = 140-450 , % (Max.) 1 2001-05-24 TOSHIBA 2SC3072 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL , 2001-05-24 TOSHIBA 2SC3072 IC - VCE IC - Vre 10 COMMON EMITTER Ta = 25°C 20 0 , 2SC3072 RESTRICTIONS ON PRODUCT USE _000707E â'¢ TOSHIBA is continually working to improve the quality
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OCR Scan

2SC3072

Abstract: C3072 2SC3072 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3072 Strobe Flash Applications Medium Power Amplifier Applications · Unit: mm High DC current gain : hFE = 140 to 450 , : 0.36 g (typ.) 1 2006-11-09 2SC3072 Electrical Characteristics (Ta = 25°C) Characteristics , A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-09 2SC3072 , VCE (V) 2006-11-09 2SC3072 RESTRICTIONS ON PRODUCT USE 20070701-EN · The information
Toshiba
Original

2SC3072

Abstract: 2SC3072 STROBE FLASH APPLICATIONS. SILICON NPN EPITAXIAL TYPE (PCT PROCESS) Unit in mm M ED IUM PO W ER AMPLIFIER APPLICATIONS. · · · High DC C urrent Gain : hpE = 140-450 (Vc e = 2V, I ç = 0.5A) hFE = 70 (Min.) ( V = 2V, I = 4A) Low Collector Saturation Voltage : v CE(sat) = 1 , (FIN) EMITTER -JEDEC -EIAJ T0SHIBA(A)2-7B1A (B)2-7B2A Weight : 0.36g (Max.) 468 2SC3072 , DISSIPATION pc
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OCR Scan
Abstract: 2SC3072 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3072 Strobe Flash Applications Medium Power Amplifier Applications · High DC current gain : hFE = 140 to 450 (VCE = 2 V, IC = , , etc). JEDEC JEITA TOSHIBA 2-7J1A Weight: 0.36 g (typ.) 1 2006-11-09 2SC3072 , indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-09 2SC3072 IC ­ VCE 10 , Ta (°C) Collector-emitter voltage VCE (V) 3 2006-11-09 2SC3072 RESTRICTIONS Toshiba
Original

2SC3072

Abstract: TOSHIBA 2SC3072 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) 2 S C 3 0 7 2 STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS â'¢ High DC Current Gain : hFE = 140-450 (VCE = 2V, le = 0.5 A) hFE = 70 (Min.) (VCE = 2 V, IC = 4 A) â'¢ Low Collector Saturation Voltage , to change without notice. 1999-06-16 1/3 TOSHIBA 2SC3072 ELECTRICAL CHARACTERISTICS (Ta = 25 , : 300-450 1999-06-16 2/3 TOSHIBA 2SC3072 IC - VCE ic - Vbe 10 COMMON EMITTER Ta = 25Â
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OCR Scan

2SC3072

Abstract: TOSHIBA 2SC3072 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) 2 S C 3 0 7 2 STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS â'¢ High DC Current Gain : hpE = 140-450 (VCE = 2 V, le = 0.5 A) hFE = 70 (Min.) (Vce = 2 V, le = 4 A) â'¢ Low Collector Saturation Voltage , CopyRight 2003 TOSHIBA 2SC3072 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST , Powered by ICminer.com Electronic-Library Service CopyRight 2003 TOSHIBA 2SC3072 IC - VCE IC - VÃE 3
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OCR Scan
55J35S 5K55S

Power MOLD

Abstract: 2SC380 (POWER MOLD) Type No. NPN 2SC3072 ­ 2SD1224 2SD1222 2SD1223 PNP ­ 2SA1242 ­ 2SB907 2SB908 IC (A) 5 5 1.5
Toshiba
Original
TE16L Power MOLD 2SC380 STA1100 2sc3233 2SC3075 2SC3405 2SD1220 2SC2983 2SD1160 2SC3233

2SC3096

Abstract: 2SC3071 . 002 2SC3072 PA/;hnf 50 20 5 1 10 0.1 40 140 450 2 0.5 1 4 0.1 2SC3074 JUS PSW 60 50 5 1 20 1 50 70 , 2SC3070 150* 10 0.01 6.5* SC-51 ECB 2SC3071 100* 2 0. 5 40* SC-64 BCE 2SC3072 120* 4 1
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OCR Scan
2SC3056 2SC3056A 2SC3057 2SC3058 2SC3058A 2SC3059 2SC3096 2SC3082K

2122L

Abstract: 2SD1878 2SD1879 2SD1623 2SC3326 2SD1221 2SD1631 2SD1631 2SC3072 2SD596 2SD1033 2SM700 2SC3518 2SD560
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OCR Scan
2SC4547 2SD1586 2SD1830 2SD1878 2SD1913 2SD1275A 2122L 2SD1273 2SD2091 2SD2092 2SD2093 2SD2094 2SD2095 2SD2096
Showing first 20 results.