2SC2873 - Datasheet Archive

 

SMD Type Silicon PNP Epitaxial Type 2SC2873 Features Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A). High speed

 

Transistors SMD Type Silicon PNP Epitaxial Type 2SC2873 2SC2873 Features Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A). High speed switching time: tstg = 1.0 s (typ.). Small flat package. PC = 1.0 to 2.0 W Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V Collector current IC 2 A Base current IB 0.4 A PC 500 mW PC *1 1000 mW Tj 150 Tstg -55 to +150 Collector power dissipation Junction temperature Storage temperature range *1 Mounted on ceramic substrate (250 mm2 X 0.8 t) www.kexin.com.cn 1 Transistors SMD Type 2SC2873 2SC2873 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max 50 Unit Collector-emitter breakdown voltage VCEO IC = 10 mA, IB = 0 Collector cut-off current ICBO VCB = 50 V, IE = 0 0.1 A Emitter cut-off current IEBO VEB = 5 V, IC = 0 0.1 A DC current gain hFE VCE = 2 V, IC = 0.5 A 70 VCE = 2 V, IC = 2.0 A V 20 Collector-emitter saturation voltage VCE (sat) IC = 1 A, IB = 0.05 A Base-emitter saturation voltage 240 VBE (sat) IC = 1 A, IB = 0.05 A Collector output capacitance Cob Turn-on time Storage time 1.2 V V 30 pF ton 0.1 s tstg 1.0 s Fall time tf 0.1 s Transition frequency fT 120 MHz hFE Classification Marking MY O Y hFE 2 MO Rank 70 140 120 240 www.kexin.com.cn VCB = 10 V, IE = 0, f = 1 MHz 0.5 VCE = 2 V, IC = 0.5 A