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2SC2715M Datasheet

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2SC2715M Jiangsu Changjiang Electronics Technology TRANSISTOR Original

2SC2715M

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Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C WBFBP-03B 2SC2715M TRANSISTOR (1.2×1.2×0.5) unit: mm TOP DESCRIPTION NPN Epitaxial planar Silicon Transistor B C 1. BASE FEATURES High power gain: Gpe=27dB(f=10.7MHz) Recommended for FM IF,OSC Stage and AM CONV.IF Stage E C 2. EMITTER 3. COLLECTOR BACK E B , Typical Characteristics 2SC2715M Sym bol A A1 b b1 b2 D E D2 E2 e L L1 L2 k z D im Jiangsu Changjiang Electronics Technology
Original
30MHZ
Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C WBFBP-03B 2SC2715M TRANSISTOR (1.2×1.2×0.5) unit: mm TOP DESCRIPTION NPN Epitaxial planar Silicon Transistor B C 1. BASE FEATURES High power gain: Gpe=27dB(f=10.7MHz) Recommended for FM IF,OSC Stage and AM CONV.IF Stage E C 2. EMITTER 3. COLLECTOR BACK E B , Typical Characteristics 2SC2715M Jiangsu Changjiang Electronics Technology Jiangsu Changjiang Electronics Technology
Original
Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C WBFBP-03B 2SC2715M TRANSISTOR (1.2×1.2×0.5) unit: mm TOP DESCRIPTION NPN Epitaxial planar Silicon Transistor B C 1. BASE FEATURES High power gain: Gpe=27dB(f=10.7MHz) Recommended for FM IF,OSC Stage and AM CONV.IF Stage E C 2. EMITTER 3. COLLECTOR BACK E B , Typical Characteristics 2SC2715M Sym bol A A1 b b1 b2 D E D2 E2 e L L1 L2 k z D Jiangsu Changjiang Electronics Technology
Original