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2SC2715M Datasheet

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2SC2715M Jiangsu Changjiang Electronics Technology TRANSISTOR
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3 pages,
124.19 Kb

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2SC2715M

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Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B WBFBP-03B Plastic-Encapsulate Transistors C WBFBP-03B WBFBP-03B 2SC2715M TRANSISTOR (1.2×1.2×0.5) unit: mm TOP DESCRIPTION NPN Epitaxial planar Silicon Transistor B C 1. BASE FEATURES High power gain: Gpe=27dB(f=10.7MHz) Recommended for FM IF,OSC Stage and AM CONV.IF Stage E C 2. EMITTER 3. COLLECTOR BACK E B , Typical Characteristics 2SC2715M Sym bol A A1 b b1 b2 D E D2 E2 e L L1 L2 k z D im ... Jiangsu Changjiang Electronics Technology
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3 pages,
117.62 Kb

WBFBP-03B TEXT
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Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B WBFBP-03B Plastic-Encapsulate Transistors C WBFBP-03B WBFBP-03B 2SC2715M TRANSISTOR (1.2×1.2×0.5) unit: mm TOP DESCRIPTION NPN Epitaxial planar Silicon Transistor B C 1. BASE FEATURES High power gain: Gpe=27dB(f=10.7MHz) Recommended for FM IF,OSC Stage and AM CONV.IF Stage E C 2. EMITTER 3. COLLECTOR BACK E B , Typical Characteristics 2SC2715M Jiangsu Changjiang Electronics Technology ... Jiangsu Changjiang Electronics Technology
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2 pages,
69.1 Kb

WBFBP-03B TEXT
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Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B WBFBP-03B Plastic-Encapsulate Transistors C WBFBP-03B WBFBP-03B 2SC2715M TRANSISTOR (1.2×1.2×0.5) unit: mm TOP DESCRIPTION NPN Epitaxial planar Silicon Transistor B C 1. BASE FEATURES High power gain: Gpe=27dB(f=10.7MHz) Recommended for FM IF,OSC Stage and AM CONV.IF Stage E C 2. EMITTER 3. COLLECTOR BACK E B , Typical Characteristics 2SC2715M Sym bol A A1 b b1 b2 D E D2 E2 e L L1 L2 k z D ... Jiangsu Changjiang Electronics Technology
Original
datasheet

3 pages,
124.19 Kb

30MHZ 2SC2715M WBFBP-03B TEXT
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