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2SC2715M Datasheet

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2SC2715M Jiangsu Changjiang Electronics Technology Co., Ltd. TRANSISTOR
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124.19 Kb

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2SC2715M

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Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B WBFBP-03B Plastic-Encapsulate Transistors C WBFBP-03B WBFBP-03B 2SC2715M TRANSISTOR (1.2�2�5) unit: mm TOP DESCRIPTION NPN Epitaxial planar Silicon Transistor B C 1. BASE FEATURES High power gain: Gpe=27dB(f=10.7MHz) Recommended for FM IF,OSC Stage and AM CONV.IF Stage E C 2. EMITTER 3. COLLECTOR BACK E B APPLICATION High , O Y 40-80 70-140 120-240 RR RO RY Typical Characteristics 2SC2715M ... Original
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3 pages,
124.19 Kb

30MHZ 2SC2715M WBFBP-03B WBFBP-03B abstract
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