2SC2655 - Datasheet Archive

 

NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two groups

 

ST 2SC2655 2SC2655 (TO-92) NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two groups O and Y, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta=25oC) Symbol Value Unit Collector Base Voltage VCBO 50 V Collector Emitter Voltage VCEO 50 V Emitter Base Voltage VEBO 5 V Collector Current IC 2 A Power Dissipation Ptot 900 mW Junction Temperature Tj 150 O Storage Temperature Range Ts -55 to +150 O C C G S P FORM A IS AVAILABLE SEMTECH ELECTRONICS LTD. ® (Subsidiary of Semtech International Holdings Limited, acompany listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 07/12/2002 ST 2SC2655 2SC2655 (TO-92) Characteristics at Tamb=25 Symbol Min. Typ. Max. Unit O hFE 70 - 140 - Y hFE 120 - 240 - hFE 40 - - - V(BR)CBO 50 - - V V(BR)CEO 50 - - V V(BR)EBO 5 - - V ICBO - - 1 µA IEBO - - 1 µA VCE(sat) - - 0.5 V VBE(sat) - - 1.2 V fT - 100 - MHz COB - 40 - pF DC Current Gain at VCE=2V, IC=0.5A at VCE=2V, IC=1.5A Collector Base Breakdown Voltage at IC=1mA Collector Emitter Breakdown Voltage at IC=10mA Emitter Base Breakdown Voltage at IE=1mA Collector Cutoff Current at VCB=50V Emitter Cutoff Current at VEB=5V Collector Saturation Voltage at IC=1A, IB=50mA Base Saturation Voltage at IC=1A, IB=50mA Gain Bandwidth Product at VCE=2V, IC=0.5A Output Capacitance at VCB=10V, f=1MHz G S P FORM A IS AVAILABLE SEMTECH ELECTRONICS LTD. ® (Subsidiary of Semtech International Holdings Limited, acompany listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 07/12/2002