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2SC2564 Datasheet

Part Manufacturer Description PDF Type
2SC2564 N/A Basic Transistor and Cross Reference Specification Scan
2SC2564 N/A Transistor Shortform Datasheet & Cross References Scan
2SC2564 N/A Shortform Transistor PDF Datasheet Scan
2SC2564 N/A Japanese Transistor Cross References (2S) Scan
2SC2564 N/A Cross Reference Datasheet Scan
2SC2564 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
2SC2564 N/A Transistor Substitution Data Book 1993 Scan
2SC2564 N/A The Japanese Transistor Manual 1981 Scan
2SC2564 N/A Shortform Data and Cross References (Misc Datasheets) Scan
2SC2564 Toshiba Silicon NPN Epitaxial Transistor Scan

2SC2564

Catalog Datasheet MFG & Type PDF Document Tags

2SC2564

Abstract: 2sa1094 JMnic Product Specification 2SC2564 Silicon NPN Power Transistors DESCRIPTION With MT-200 package Complement to type 2SA1094 High transition frequency APPLICATIONS For power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Collector;connected to , Tstg Storage temperature -55~150 TC=25 JMnic Product Specification 2SC2564 , Specification 2SC2564 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3
JMnic
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2SC2564

Abstract: 2sa1094 SavantIC Semiconductor Product Specification 2SC2564 Silicon NPN Power Transistors DESCRIPTION ·With MT-200 package ·Complement to type 2SA1094 ·High transition frequency APPLICATIONS ·For power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Collector , 2SC2564 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL , .2 Outline dimensions 3 2SC2564 -
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2SC2564

Abstract: 2SA1094 Inchange Semiconductor Product Specification 2SC2564 Silicon NPN Power Transistors DESCRIPTION With MT-200 package Complement to type 2SA1094 High transition frequency APPLICATIONS For power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Collector , TC=25 Inchange Semiconductor Product Specification 2SC2564 Silicon NPN Power Transistors , Inchange Semiconductor Product Specification 2SC2564 Silicon NPN Power Transistors PACKAGE
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NEC 2561

Abstract: NEC 2581 2SC2706 2SC 2587A 0 a 2SC2706 2SC 2588 - 0 a 2SC2564 2SC 2588A 0 a 2SC2564
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OCR Scan
2SC2749 2SC1840 2SD1488 2SC2621 2SC2320 NEC 2561 NEC 2581 nec 2565 2565 nec NEC 2562 2SC3038 2SC2333 2SC2738 2SC3968 2SC3039 2SC2335

2sa1094

Abstract: 2SC2564 JMnic Product Specification 2SA1094 Silicon PNP Power Transistors DESCRIPTION With MT-200 package Complement to type 2SC2564 APPLICATIONS For power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (MT-200) and symbol Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -140 V VCEO
JMnic
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2sa1094

Abstract: 2SC2564 SavantIC Semiconductor Product Specification 2SA1094 Silicon PNP Power Transistors DESCRIPTION ·With MT-200 package ·Complement to type 2SC2564 APPLICATIONS ·For power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (MT-200) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter
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2SA1094

Abstract: 2SC2564 AÃK AOK Semiconductor Product Specification Silicon PNP Power Transistors 2SA1094 DESCRIPTION â'¢ With MT-200 package â'¢ Complement to type 2SC2564 APPLICATIONS â'¢ For power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base Co I lector: connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25iC) SYMBOL PARAMETER CONDITIONS VALUE UNIT VcBO Collector-base voltage Open emitter -140 V VcEO Collector-emitter voltage Open base -140 V Ve bo Emitter-base voltage Open collector -5 V
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OCR Scan
065B

2SA1094

Abstract: 2SC2564 Inchange Semiconductor Product Specification 2SA1094 Silicon PNP Power Transistors DESCRIPTION ·With MT-200 package ·Complement to type 2SC2564 APPLICATIONS ·For power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (MT-200) and symbol Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter
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2sa1094

Abstract: 2SC2564 isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1094 DESCRIPTION ·Collector-Emitter Breakdown VoltageV(BR)CEO= -140V(Min) ·Good Linearity of hFE ·Complement to Type 2SC2564 APPLICATIONS ·Power amplifier applications ·Recommended for 80W high-fidelity audio frequency amplifier output stage ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER scs .i w VALUE UNIT w w -140 V -140 V VCBO Collector-Base Voltage VCEO
INCHANGE Semiconductor
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2sa1094 transistor 80w power amplifier

2SA1094 TOSHIBA

Abstract: 2SA1094 TOSHIBA {DISCRETE/OPTO! Sb DE l'ìOTTSSD 00075fci5 3 | 9097250 TOSHIBA CD ISCRETE/OPTO) 2SC2564 5bC "0T5"6"5 0 7- 3 2>-i3 SILICON NPN EPITAXIAL TYPE (PCT PROCESS) «y Unit in mm POWER AMPLIFIER APPLICATIONS. FEATURES: â'¢ High Breakdown Voltage : VCE0: =140V High Transition Frequency : ft=90MHz (Typ.) Complementary to 2SA1094. Recommended for 80W High-Fidelity Audio Frequency Amplifier Output Stage, MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 140 V
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OCR Scan
2SA1094 TOSHIBA 2SA109 2SC2564 TOSHIBA 91IIIII
Abstract: , One. TELEPHONE: (973) 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 (212)227-6005 FAX: (973) 376-8960 U.S.A. Silicon PNP Power Transistor 2SA1094 DESCRIPTION â'¢ Collector-Emitter Breakdown VoltageV(BR)CEo= -140V(Min) â'¢ Good Linearity of hFE â'¢ Complement to Type 2SC2564 PIN 1.BASE 2. COLLECTOR S.BI/IITTER 1 APPLICATIONS MT-200 package 2 3 â'¢ Power amplifier applications â'¢ Recommended for SOW high-fidelity audio frequency amplifier output stage New Jersey Semiconductor
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transistor 2SB618

Abstract: 2SC2522 NPN 2SA1075 PNP 2SC2525 NPN 2SA1094 PNP 2SC2564 NPN 2SA1095 PNP
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transistor 2SB618 2SA733 2SC1815 2SA970 2SC2240 2SA988 2SC1841

80m60

Abstract: T2550 TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA (D I S C R E T E / O P T O ) ' ~5b d ÊTJ T E H 7550 0007254 f l - y 5 0 C U7 254 D -f- 3 3 ~ ¿3 2 S A 1 0 9 4 SILICO N PNP E P IT A X IA L TYPE (PCT PROCESS) Unit in mm POWER AMPLIFIER APPLICATIONS. FEATURES! High Breakdown Voltage : VcEO=_140V High Transition Frequency : fi'=70MHz (Typ.) Complementary to 2SC2564. Recommehded for 80W High-Fidelity Audio Frequency Amplifier Output Stage. 3Ì.3MAX. 5.3MAX. maximum ratings
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OCR Scan
80m60 T2550
Abstract: T oshiba c d i s c r e t e /o p t o j - Sb DE 1^ 01 72 50 DQ07SbS 3 9097250 TOSHIBA (DISCRETE/OPTO) ^¿'c OT56"5 Ú'7r32>-¿3 2SC2564 POWER AMPLIFIER APPLICATIONS. FEATURES: · High B re a k d o w n V o l t a g e : VCEO=140V : fx=90MHz ( T y p .) SILIC O N NPN E P IT A X IA L TYPE (PCT PROCESS) Unit in mm 31,0 34.4 ± 0 .3 2,0 · H ig h T r a n s i t i o n F r e q u e n c y · C o m p le m e n ta ry t o 2 S A 1094. 0 zft= 5 .4 5 * 0 .1 5 , 1-3 o il -
OCR Scan
DQ07S

2sa1046

Abstract: 2SA1023 2SC2550 6 8 2SC2557 150 -5 -1A 70* 220 2SC2564 -5 -1A 60* 350 2SC2565 -5 -5
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2SC2383 2SC2384 2SA1076 2sa1046 2SA1023 2sa1023 equivalent 2SC2398 2SA1026 2sa1066 2SA1001 2SA1002 2SA1003 1602SA1004 2SA1005 2SA1006

TEA 1091

Abstract: 2Sc2565 A 70 * 220 2 * 125 2SC2564 t ⡠> -/il » 1095 » » » -160 - 5 -15 A 150W ¡ 7c=25 'C) 150
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OCR Scan
TEA 1091 TRANSISTOR 2sc2526 2SC2530 2SA1073 138B ic tea 1090

BA101D

Abstract: J04075 ·5 ~g:;:~~~~ 65 J02015A 2SC2134 SEMN055 S01098 S01098 BlU60/12 2SC2564 2N6479 ~g ~~g~ ~g 30
Short Form Catalog
Original
SGSIF464 2N6482 B40-12A J04075 BA101D sars0 S0146 2N5529 SGSF464 SGSF564 S01290 2N6093 2N5304

mg75n2ys40

Abstract: MG15N6ES42 2SC2100 2SC2290 2SC2270 2SC3420 2SC2564/A 2SC3280 2SC2101 2SC2638 2SC2270 (NP
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1S1658 mg75n2ys40 MG15N6ES42 2SK150A 2sk270a MG150n2ys40 MG8N6ES42 02BZ2 1S2092 1SZ5759 02CZ2 1S2094 2N3055

b1375

Abstract: 2sk270a 2SC2555N 2SC2563 2SC2564/A 2SC2565/A 2SC2650 2SC2651 2SC2662 2SC2663 2SC2664 2SC2704 2SC2706 2SC2790A
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OCR Scan
2SA1015 MG15G1AL2 S-AU15 b1375 2SA1051b MG50G2CL1 mg100g1al2 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790
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