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2SC2562 Datasheet

Part Manufacturer Description PDF Type
2SC2562 Motorola Motorola Semiconductor Data & Cross Reference Book Scan
2SC2562 N/A Basic Transistor and Cross Reference Specification Scan
2SC2562 N/A Transistor Shortform Datasheet & Cross References Scan
2SC2562 N/A Shortform Transistor PDF Datasheet Scan
2SC2562 N/A Japanese Transistor Cross References (2S) Scan
2SC2562 N/A Cross Reference Datasheet Scan
2SC2562 N/A Catalog Scans - Shortform Datasheet Scan
2SC2562 N/A Catalog Scans - Shortform Datasheet Scan
2SC2562 N/A Catalog Scans - Shortform Datasheet Scan
2SC2562 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
2SC2562 N/A Semiconductor Master Cross Reference Guide Scan
2SC2562 N/A The Transistor Manual (Japanese) 1993 Scan
2SC2562 N/A Transistor Substitution Data Book 1993 Scan
2SC2562 N/A The Japanese Transistor Manual 1981 Scan
2SC2562 N/A Shortform Data and Cross References (Misc Datasheets) Scan
2SC2562 Toshiba Toshiba Shortform Catalog Scan
2SC2562 Toshiba Integrated Circuits for TV Systems Scan
2SC2562-O N/A Transistor Shortform Datasheet & Cross References Scan
2SC2562-Y N/A Transistor Shortform Datasheet & Cross References Scan

2SC2562

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: JMnic Product Specification 2SC2562 Silicon NPN Power Transistors DESCRIPTION With TO , temperature -55~150 TC=25 JMnic Product Specification 2SC2562 Silicon NPN Power , Product Specification 2SC2562 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3 JMnic Product Specification 2SC2562 Silicon NPN Power Transistors 4 JMnic Product Specification 2SC2562 Silicon NPN Power Transistors JMnic
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2SA1012 2SA1012 jmnic
Abstract: SavantIC Semiconductor Product Specification 2SC2562 Silicon NPN Power Transistors DESCRIPTION ·With TO-220 package ·Complement to type 2SA1012 ·Low saturation voltage ·High speed switching , 2SC2562 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL , ) 3 2SC2562 SavantIC Semiconductor Product Specification 2SC2562 Silicon NPN Power , 2SC2562 - -
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Abstract: Inchange Semiconductor Product Specification 2SC2562 Silicon NPN Power Transistors , =25 Inchange Semiconductor Product Specification 2SC2562 Silicon NPN Power Transistors , CHA IN Turn-on time 50 UNIT Inchange Semiconductor Product Specification 2SC2562 , Specification 2SC2562 Silicon NPN Power Transistors E SEM NG CHA IN 4 OND IC TOR UC Inchange Semiconductor Product Specification 2SC2562 Silicon NPN Power -
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Abstract: 2SC2562 HIGH CURRENT SWITCHING APPLICATIONS. FEATURES: · Low Collector Saturation Voltage : vCE(sat)=0-4v (Max-) SILICON NPN EPITAXIAL TYPE INDUSTRIAL APPLICATIONS _ Unit in mm 1D.3MAX. 0 3-6±0.3 (at IC=3A) · High Speed Switching Time : ts tg=1.0iJS (Typ.) · Complementary , 2SC2562 COLLECTOR CURRENT V CE - X c I c (A ) Vc£ - I c COLLECTOR-EMITTER VOLTAGE DC CURRENT , IS S IP A T IO N P c (W) o h d I 2SC2562 B A SE -EM ITTER SATURATION VOLTAQE VB E ( s a t -
OCR Scan
2SC2562 Toshiba 12CK240 7CH140
Abstract: 2SC2562 · · · SILICON NPN EPITAXIAL TYPE (PCT PROCESS) HIGH CURRENT SW IT C H IN G APPLICATIONS. INDUSTRIAL APPLICATIONS U nit in m m p r Low Collector Saturation Voltage : v CE(sat) = °-4V (Max.) (at Ic= 3A ) High Speed Switching Time : tgtg=1.0,us (Typ.) Complementary to 2SA1012. M , -220AB JEDEC EIAJ SC-46 TOSHIBA 2-10A1A W eight : 1.9g Mounting kit No. AC75 452 2SC2562 ELECTRICAL , t) (V) V cE (sut) - 'C 2SC2562 C O LLECTO R -EM ITTER V OLTA G E ^CE TTr, , ^ v -
OCR Scan
Abstract: TOSHIBA {DISCRETE/OPTO} ~5b DE 1^0^7250 ODDTSSi A | 9097250 TOSHIBA < DI SCRETE/OPTO) ' J7559 0 jn -33,07 SILICON NPN EPITAXIAL TYPE (PCT PROCESS) 2SC2562 HIGH CURRENT SWITCHING APPLICATIONS. FEATURES: â'¢ Low Collector Saturation Voltage : vCE(sat)=0-W (Max.) (at IC=3A) â'¢ High Speed Switching Time , -33-5? 2SC2562 STATIC CHARACTERISTICS VCE ~ IC 1000 1 2 3 4 5 6 COLLECTOR CURRENT Ic (A) hFE â'" ^C 0103 0.05 0.1 , " T-3 3-0 ? 2SC2562 0.5 O.i 0.1 vBE(sat) - ÌC COMMON EMITTER XQ/IB-20 - -
OCR Scan
AC75 K240 DISCRETE/0PT03- 11I1II
Abstract: *)! 11 2SC135S 2SCÌ741A 2SC 3472 *±mm 2SC3376 2SC4359 2SC 3473 B iL 2SD1060 2SC2562 , 2SC2562 2SC2516 2SD1475 2SD1778 2SC 3493 B iL 2SC3124 2SC2755 2SC3077 2SC3837K 2SC 3494 - B iL -
OCR Scan
2SC3552 2SC2482 2SC3478 2SC2632 2SC3269 2SC3209 k 3496 2SC2283 2SD1431 2SC3393 2SC3312 2SD1433 2SD1610
Abstract: 2SC2559-MA B% 800MHz PA 35 18 1. 5 17.5 200 20 20 200 10 0. 3 2SC2562 «2 PSW 60 50 5 25 1 50 70 , * 2SA1012 T0-220AB® BCE 2SC2562 5000* 10 0.02 1 NF max 3dB f=lGHz io-nB BEC 2SC2570A 200* 10 0. 05 -
OCR Scan
2SC2556 2SC2556A 2SC2558-KA 2SC2558-MA 2SC2559-KA 2SC2582 2SC2625 2SC2559 2SC2626 2SC2624 2SC2594 800MH
Abstract: 2SC2562 Transistors Si NPN Power HF BJT Military/High-RelN V(BR)CEO (V)50 V(BR)CBO (V)60 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)25 Maximum Operating Temp (øC)150Ãu I(CBO) Max. (A)1.0uØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.70 h(FE) Max. Current gain.240 @I(C) (A) (Test Condition)1.0 @V(CE) (V) (Test Condition)1.0 f(T) Min. (Hz) Transition Freq120M @I(C) (A) (Test Condition) @V(CE) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test American Microsemiconductor
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Abstract: - 243 - m -s Type No. 2SD1510 2SD1511 2SD1512 2SD1513 ^ 2SD1514 2SD1516 ¿ 2SD1517 2SD1518 2SD1519 2SD1520 2SD1520 L/S icri 1co i 2SD 2S0 2SD 2SO 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SD 1522 1523 1524 1526 1527 / 1528 1529 1530 1531 * 1532 4 1533 1536 1537 153 7A 1539 1541 1542 1543 1544 1545 1546 ^ £ Manuf. te T te T te T a m %}joeJU te T te T M JE # SANYO 2SD1190 2SD1626 2SC3495 2SD1246 2SD1236 2SD1236 2SC3083 2SC3644 M TOSHIBA 2SD1414 2SC2459 2SC2562 s -
OCR Scan
2SD1586 2SC2784 2SD1601 2SD1227M 2SC4345 2SC4008 TE 1539 2sd1314 2sc2233 2SD1539 2SD1615 2SD1933 2SD965
Abstract: 2SD2025 2SC3646 2SD1802 2SD1825 2SD1827 m n m m m m # 2SD880 2SD553 2SC2562 2SD553 2SC3258 -
OCR Scan
2SD1544 2SD1545 2SD1546 2SD1548 2SD2293 2SD2295 2SD1555 2SB1833 2SD1876 2SD772 nec 2SD1878 2SD1883 1899-Z 2SD1547
Abstract: © T 2SC3281 2SC2987A 2SD1975 2SD 1719 fé T 2SD1110 2SD 1720 â¡ â'"A 2SC3253 2SC2562 -
OCR Scan
2SD2068 2SC2750 2SD1645 2SD1638 2SD1275A 2SD1288 Toshiba 2SC3281 2sc3281 toshiba 2sd1703 toshiba 2sc3280 2SD1398 2SC2681
Abstract: 2SC 2313 â'¢ « 2SC2100 2SC 2314 H # 2SC2036 2SC1957 2SC 2315_- -9-v>ry 2SC2562 -
OCR Scan
2SC3042 2SC1815 2SC945 2SC3311A 2SC2320 2SC2634 2sc2460b 25C945 25c1815 2SC2313 2SC3040 2SD641 2SC2819 2SC2751 2SC2740
Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252 Plastic-Encapsulate Transistors 2SA1012 TRANSISTOR (PNP) FEATURES HIGH CURRENT SWITCHING APPLICATIONS. Low Collector Saturation Voltage : VCE(SAT) = - 0.4V(MAX) at IC= - 3A High Speed Swithing Time : tstg = 1.0us (Typ.) Complementary to 2SC2562 TO-252-2L 1.BASE 2.COLLECTOR 3.EMITTER MAXIMUM RATINGS (Ta=25â"ƒ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -60 V VCEO Jiangsu Changjiang Electronics Technology
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Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 2SA1012 TRANSISTOR Plastic-Encapsulate Transistors (PNP) FEATURES HIGH CURRENT SWITCHING APPLICATIONS. . Low Collector Saturation Voltage : VCE(SAT) = - 0.4V(MAX) at IC= - 3A . High Speed Swithing Time : tstg = 1.0us (Typ.) . Complementary to 2SC2562 TO-220 1. BASE 2. COLLECTOTR 3. EMITTER 123 MAXIMUM RATINGS* TA=25â"ƒ unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage -60 Jiangsu Changjiang Electronics Technology
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Abstract: Power Transistors www.jmnic.com 2SA1012 Silicon PNP Transistors Features BCE With TO-220 package Complementary to 2SC2562 Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT VCBO Collector to base voltage -60 V VCEO Collector to emitter voltage -50 V VEBO Emitter to base voltage -5 V IB Base current A IC Collector current -5 A PC Collector power dissipation 25 W Tj Junction temperature 150 JMnic
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Abstract: T0-220 Type Power Transistors TO-22QAB, TQ-220 dg) Interchangeability List Type No. Application NPN TV chroma output TV Audio output TV Vertical output 2SC1569 0.15 2SC2242 2SC2073 2SD1052 General purpose 2SD1052A 2SD880 TV Horizontal output General purpose TV Horizontal output 2SC2233 4 2SD526 2SD525 2SD1069 2SC3558 2SC2562 2SC3258 Low VCE (sat) 2SD553 2SD843 2SC3257 2SC3345 2SC3346 2SC2552 2SD841 Switching regulator 2SC3148 2SC2553 2SD687 2S01088 2SD798 Darlington transistor 2SD799 2SD635 2SD634 2SD633 -
OCR Scan
2SC3559 2SC3309 transistor regulator tv transistor 2sd526 transistor 2Sb1020 npn 2sD1413 2sd1408 2sd1407 2SB675 2SB674 2SB673 2SB677 2SD1409 2SD1417
Abstract: - 230 - m « Type No. 2SD1055 ^ = f e t Manuf. - A = = E E E E E m & & & ß Pß H SANYO * 2SD1246 2SD613 3K 52 TOSHIBA 2SD525 2SC2562 2SD843 0 m NEC B ±L HITACHI 2SD1137 2SD1134 ^ ± ifi FUJITSU 2SD 1059 2SD 1060 2SD 1061 ^ 2SD 1062 2SD 1 0 6 3 * * 2SD743 2SD568 tö T MATSUSHITA 2SD1051 2SD812 2SD961 2SD961 2SD1445 2SD1487 2SD1705 2SD1706 h m MITSUBISHI - A ROHM 2SD1580 2SD1720 2SD1580 é ?sn inß* 2 SD 106 5 2 SD 1067 2SD 1069 2SD 1070 2SD -
OCR Scan
2SD1084 2SD1238 2SD772B 2SD987 SD 1083 SD1087 2sd1033 2SD1163 2SD1113 2SD1115 2SD212L/S 2SD2121L/S
Abstract: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1012 DESCRIPTION ·Low Collector Saturation Voltage :VCE(sat)= -0.4(V)(Max)@IC= -3A ·High Switching Speed ·Complement to Type 2SC2562 APPLICATIONS ·Designed for high current switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC INCHANGE Semiconductor
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transistor 2sA1012 50V 1A PNP power transistor
Abstract: 2SD 693 s te t 2SD1461 2SD 699 * 2 MG30G1BL3 2SD 704 â" h m ZSD1060 2SC2562 2SD743 -
OCR Scan
2SC3144 2SD650 2SD837B 2SD678 2SD683 2SD1203 2SC4711 2SD670 hitachi 2SD731 2SD670 2SC2139 2SD213Z 2SD560 2SD1932 2SD1276A
Abstract: TOSHIBA TOSHIBA TRANSISTOR 2SA1012 HIGH CURRENT SWITCHING APPLICATIONS. 2SA1012 SILICON PNP EPITAXIAL TYPE (PCT PROCESS) INDUSTRIAL APPLICATIONS Unit in mm L ü g : £ X yj V ä to irf fH i ^ in11 1.5 M A X . · · · Low Collector Saturation Voltage : v CE(sat) = -0.4V (Max.) at I q = -3 A High Speed Switching Time : tgtg^l.O/^siTyp.) Complementary to 2SC2562. SYMBOL VCBO VCEO Ve b o ic PC RATING -6 0 -5 0 -5 -5 25 150 -5 5 -1 5 0 UNIT V V V W °C 0.7 6 *1 H , a o *5 H " -
OCR Scan
A101 961001EAA2
Abstract: 2SC2562 Transistors Si NPN Power HF BJT Military/High-RelN V(BR)CEO (V)50 V(BR)CBO (V)60 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)25 Maximum Operating Temp (øC)150Ãu I(CBO) Max. (A)1.0uØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.70 h(FE) Max. Current gain.240 @I(C) (A) (Test Condition)1.0 @V(CE) (V) (Test Condition)1.0 f(T) Min. (Hz) Transition Freq120M @I(C) (A) (Test Condition) @V(CE) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test -
OCR Scan
2SC2749 2SC1840 2SD1488 2SC2621 2SC2564 NEC 2561 NEC 2581 nec 2565 2565 nec NEC 2562 2SC3038 2SC2333 2SC2738 2SC3968 2SC3039 2SC2335
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