NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| 2SC2216 | Continental Device India Limited | Semiconductor Device Data Book 1996 |
1 pages, |
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| 2SC2216 | Continental Device India Limited | TO-92 NPN Plastic Package Transistors |
1 pages, |
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| 2SC2216 | Micro Commercial Components | NPN Silicon Plastic-Encapsulate Transistor |
1 pages, |
Original | |
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| 2SC2216 | N/A | Shortform Data and Cross References (Misc Datasheets) |
1 pages, |
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| 2SC2216 | N/A | The Japanese Transistor Manual 1981 |
2 pages, |
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| 2SC2216 | N/A | Transistor Substitution Data Book 1993 |
1 pages, |
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| 2SC2216 | N/A | High Frequency Device Data Book (Japanese) |
1 pages, |
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| 2SC2216 | N/A | The Transistor Manual (Japanese) 1993 |
2 pages, |
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| 2SC2216 | Toshiba | NPN Transistor |
4 pages, |
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| 2SC2216 | Toshiba | Si NPN LP HF BJT |
4 pages, |
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: 2SC2216,2SC2717 2SC2717 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC2216,2SC2717 2SC2717 TV Final , linearity of hFE. Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage 2SC2216 2SC2717 2SC2717 Collector-emitter voltage Symbol VCBO 2SC2216 2SC2717 2SC2717 Emitter-base voltage , = 25°C) Characteristics Collector cut-off current 2SC2216 2SC2717 2SC2717 ICBO Test Condition , breakdown voltage Symbol VEB = 3 V, IC = 0 V (BR) CEO IC = 10 mA, IB = 0 2SC2216 2SC2717 2SC2717 ... | Original |
5 pages, |
2SC2717 2SC2216 2SC2216 abstract |
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| Abstract: 1280AS 1280AS a a 2SC2062 2SC2062 2SC 1280S 1280S b a 2SC2062 2SC2062 2SC 1281 » 2SC2216 2SC1634 2SC1634 2SC 1282 » 2SC2216 2SC1685 2SC1685 2SC 1283 » 2SC2216 2SC1921 2SC1921 2SC2258 2SC2258 2SC 1284 = # 2SC2216 2SC2926 2SC2926 2SC ... | OCR Scan |
1 pages, |
2SC2104 2SC1741 2SC1412 2SC1236 2sc114 2SC2508 2SC3419 2SC3581 SC-1278 2SC945 2SC828 2SC752 2SC512 2SC504 2SC4455 2SC510 2SC2104 2SC510 abstract |
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| Abstract: TOSHIBA 2SC2216,2SC2717 2SC2717 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2216, 2SC2717 2SC2717 , Collector-Base Voltage 2SC2216 vCBO 50 V 2SC2717 2SC2717 30 Collector-Emitter Voltage 2SC2216 vCEO 45 V 2SC2717 2SC2717 , 2SC2216,2SC2717 2SC2717 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current 2SC2216 ÏCBO VCB = 50 V, IE = 0 - - 0.1 /uA 2SC2717 2SC2717 VCB = 30 V , Voltage 2SC2216 V (BR) CEO Ic = 10 mA, Ib = 0 45 - - V 2SC2717 2SC2717 25 - - DC Current Gain 2SC2216 hFE ... | OCR Scan |
4 pages, |
2SC2717 2SC2216 2216 2SC2216 abstract |
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| Abstract: TOSHIBA 2SC2216,2SC2717 2SC2717 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2216, 2SC2717 2SC2717 , Voltage 2SC2216 VCBO 50 V 2SC2717 2SC2717 30 Collector-Emitter Voltage 2SC2216 VCEO 45 V 2SC2717 2SC2717 25 , TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current 2SC2216 ÏCBO VCB = 50V, IE = 0 - - 0.1 , Collector-Emitter Breakdown Voltage 2SC2216 v (BR) CEO Iq = 10mA, IB = 0 45 - - V 2SC2717 2SC2717 25 - - DC Current Gain 2SC2216 hFE Vce = 12.5V, IC = 12.5mA 40 - 140 - 2SC2717 2SC2717 40 - 240 Collector-Emitter ... | OCR Scan |
3 pages, |
2SC2717 2SC2216 2SC2216 abstract |
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| Abstract: TOSHIBA 2SC2216,2SC2717 2SC2717 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2216, 2SC2717 2SC2717 TV , hjrE. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage 2SC2216 2SC2717 2SC2717 2SC2216 2SC2717 2SC2717 Emitter-Base Voltage Collector Current Emitter Current SYMBOL VCBO VCEO Vebo ic IE , CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current 2SC2216 !CBO Vcb = 50V, IE = 0 - - 0.1 /uA 2SC2717 2SC2717 , Breakdown Voltage 2SC2216 v (BR) CEO IC = 10mA, IB=0 45 - - V 2SC2717 2SC2717 25 - - DC Current Gain 2SC2216 hEE ... | OCR Scan |
3 pages, |
2SC2717 2SC2216 2SC2216 abstract |
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| Abstract: 2SC2216 2SC2216 TRANSISTOR (NPN) TO-92 FEATURES Power dissipation PCM: 300 mW (Tamb=25) Collector current 50 mA ICM: Collector-base voltage 50 V V(BR)CBO : Operating and storage junction temperature range 1. BASE 2. EMITTER 3. COLLECTOR TJ, Tstg: -55 to +150 1 2 3 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol unless otherwise specified) Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= 100uA, IE=0 ... | Original |
1 pages, |
2SC2216 2SC2216 abstract |
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| Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SC2216 TRANSISTOR (NPN) FEATURES Amplifier dissipation NPN Silicon TO-92 1. BASE MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 4 , 2SC2216 ... | Original |
2 pages, |
2SC2216 2SC2216 abstract |
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| Abstract: - 108 - Si « Type No. a s Manuf. H * SANYO x s TOSHIBA b m NEC a a HITACHI t ± a FUJITSU ta t MATSUSHITA . m MITSUBISHI D - A ROHM 2SC 1185 0 - 2SC792 2SC792 2SC 1187 a a 2SC2999 2SC2999 2SC2215 2SC2215 2SC1906 2SC1906 2SC1687 2SC1687 2SC 1188 b s 2SC2216 2sc1906 2SC1687 2SC1687 2SC2926 2SC2926 2SC 1189 b S 2SC2216 2SC1906 2SC1906 2SC1688 2SC1688 2SC2926 2SC2926 2SC 1190 fâ T 2SC2102 2SC2102 2SC2282 2SC2282 2SC 1192 fô t 2SC2181 2SC2181 2SC 1153 m s ZSCZ14S ZSCZ14S 2SU68I 2SU68I 2SC 1196 * S 2sc3139 2SC 1196A S 2 2SC3139 2SC3139 2SC2787 2SC2787 2SC 119? Î 3Ë ... | OCR Scan |
1 pages, |
2SC1688 2SC1687 2sc1567 2SC1214 2SC2215 2SC2216 2SC792 2SC3139 2SC2999 2SC2540 2SC2282 2SC1675 2sc1741 2SC2889 2SC2274 2SC792 abstract |
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| Abstract: 2sc1015 1014H 2SC780A 2SC780A(G) 2SC943 2SC943 2SC1573 2SC1573 2SC3800 2SC3800 2 SC 1034 • 'J- 2SD818 2SD818 2SD299 2SD299 2 SC 1035 H ft 2SC2216 2SC1070 2SC1070 2SC1779 2SC1779 2 SC 1036 = ft 2SC2216 2SC1070 2SC1070 2SC1779 2SC1779 2SC 1037 / ED pifi 2SC2887 2SC2887 2SD1458 2SD1458 ... | OCR Scan |
1 pages, |
2SC2083 2SC2183 2SD612 2SD1380 2SC998 2SC790 2SC30 2SC2993 2SC2221 2SC2036 2SD299 matsushita 2SD226A 2SD371 sc 1046 2sc943 2SD612 abstract |
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| Abstract: 2SC2216 0.05 A , 50 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 FEATURES Amplifier dissipation NPN Silicon G H Base Emitter Collector J A D A B C D E F G H J K K E Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 3.30 3.81 0.36 0.56 0.36 0.51 1.27 , specification will not be informed individually. Page 1 of 2 2SC2216 Elektronische Bauelemente 0.05 A ... | Original |
2 pages, |
2SC2216 2SC2216 abstract |
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| Abstract: 2SC2216 2SC1855 2SC1855 2SC 2189«' *±W* 2SD425 2SD425 2SC 2190 - *±«i 2SC2137 2SC2137 2SC 2191 ' 2SC2139 2SC2139 ... | OCR Scan |
1 pages, |
2sc111 2215 2SC2643 2sc2655 2SC2905 sl 2172 2SC3626 TT 2190 T T 2190 2SC3147 2sc2999 2SC2917 2sc380 2SC2118 2SC2106 2SC2643 abstract |
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| Part | Manufacturer | Description | Shortform Datasheet | Ordering |
| 2SC2216 | N/A | Silicon NPN | |
| Fairchild Part | Orderable | Industry Part | Manufacturer | Type | Family | Description |
| 2N5210 | 2N5210TA Buy | 2SC2216 Buy | Jiangsu Changjiang Electronics Technology Co Ltd | Close | Small Signal | NPN General Purpose Amplifier |
| NTE Electronics Part | Industry Part |
| Part | Similar Part | Notes |
| 2SC2216 Buy | 146848 Buy | |
| 2SC2216 Buy | 2SC1036 Buy | |
| 2SC2216 Buy | 2SC1128 Buy | Data from Sony Semiconductor Replacement Handbook 1991 |
| 2SC2216 Buy | 2SC1687 Buy | |
| 2SC2216 Buy | 2SC2188 Buy | |
| 2SC2216 Buy | 2SC2407 Buy | |
| 2SC2216 Buy | 2SC784 Buy | |
| 2SC2216 Buy | 3DG112C Buy | |
| 2SC2216 Buy | 3DG2216 Buy | |
| 2SC2216 Buy | BF199 Buy |