2SC1970 - Datasheet Archive

 

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1970 DESCRIPTION ·High Power Gain: Gpe 9.2dB,f= 175MHz, PO= 1W;

 

isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1970 2SC1970 DESCRIPTION ·High Power Gain: Gpe 9.2dB,f= 175MHz, PO= 1W; VCC= 13.5V ·High Reliability APPLICATIONS ·Designed for RF power amplifiers on VHF band mobile radio applications. .cn mi e ABSOLUTE MAXIMUM RATINGS (Ta=25) SYMBOL PARAMETER VCBO VEBO IC 40 V Collector-Emitter Voltage RBE= 17 V Emitter-Base Voltage 4 V 0.6 A w w Collector Current Collector Power Dissipation @TC=25 5 W PC Collector Power Dissipation @Ta=25 Tj Tstg UNIT scs .i w Collector-Base Voltage VCEO VALUE 1 150 -55~150 Junction Temperature Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-a Thermal Resistance,Junction to Ambient 125 /W Rth j-c Thermal Resistance,Junction to Case 25 /W isc Websitewww.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1970 2SC1970 ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= 5mA, IE= 0 40 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; RBE= 17 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA, IC= 0 4 V ICBO Collector Cutoff Current VCB= 25V; IE= 0 0.1 mA IEBO Emitter Cutoff Current VEB= 3V; IC= 0 0.1 mA hFE DC Current Gain IC= 0.1A; VCE= 10V PO Output Power C hFE Classifications X A 10-25 20-45 scs .i w w w Collector Efficiency .cn mi e 180 1 1.2 W 50 60 % VCC= 13.5V; Pin= 0.12W; f= 175MHz B C D 35-70 55-110 90-180 isc Websitewww.iscsemi.cn 10