2SC1226 - Datasheet Archive

 

www.jmnic.com 2SC1226 Silicon NPN Transistors BCE Features BCE With TO-202 package Absolute Maximum Ratings Tc=25 SYMBOL

 

Power Transistors www.jmnic.com 2SC1226 2SC1226 Silicon NPN Transistors BCE Features BCE With TO-202 package Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT VCBO Collector to base voltage 40 V VCEO Collector to emitter voltage 32 V VEBO ICP IC Emitter to base voltage Peak collector current Collector current 5 2 V A A PC Collector power dissipation 10 W Tj Junction temperature 150 Tstg Storage temperature TO-202 -55~150 Electrical Characteristics Tc=25 SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT ICBO Collector-base cut-off current VCB=20V; IE=0 1 uA IEBO Emitter-base cut-off current VEB=5V; IC=0 100 uA ICEO Collector-emitter cut-off current VCE=12V; IB=0 100 uA VCBO Collector-base breakdown voltage IE=1mA; IB=0 40 V Emitter-base breakdown voltage IC=1mA; IB=0 5 V VCE(sat-1) Collector-emitter saturation voltages IC=2A; IB=0.2A VCE(sat-2) Collector-emitter saturation voltages V(BR)ceo VEBO Collector-emitter breakdown voltage hFE-1 Forward current transfer ratio hFE-2 Base-emitter saturation voltages IC=2A; IB=0.2A hFE Classifications Class hFE-1 P 50-100 Q 80-160 R 120-220 JMnic 50 V Forward current transfer ratio VBE(sat)1 IC=1A; VCE=5V 1.0 220 1.5 V