2SB680 -100V 2SC1080 - Datasheet Archive

 

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB680 DESCRIPTION ·High Power Dissipation: PC= 100W(Max.)@TC=25

 

isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB680 2SB680 DESCRIPTION ·High Power Dissipation: PC= 100W(Max.)@TC=25 ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -100V -100V(Min.) ·Complement to Type 2SC1080 2SC1080 APPLICATIONS ·Designed for audio power amplifier applications. .cn mi e ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL scs .i w PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w w VALUE UNIT -100 V -100 V -5 V IC Collector Current-Continuous -12 A IE Emitter Current-Continuous 12 A PC Collector Power Dissipation @TC=25 100 W Tj Junction Temperature 150 Tstg Storage Temperature -65~150 isc Websitewww.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB680 2SB680 ELECTRICAL CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= -100mA ;IB= 0 -100 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -10mA ;IC= 0 -5 V VCE(sat) Collector-Emitter Saturation Voltage IC= -10A; IB= -1A -3.0 V VBE(on) Base-Emitter On Voltage IC= -10A ; VCE= -5V -2.5 V ICBO Collector Cutoff Current VCB= -50V; IE= 0 -0.1 mA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -0.1 mA hFE-1 DC Current Gain hFE-2 DC Current Gain COB Output Capacitance fT CONDITIONS Current-Gain-Bandwidth Product hFE-1 Classifications R Y 40-80 70-140 isc Websitewww.iscsemi.cn TYP. .cn mi e scs .i w w w MIN IC= -2A ; VCE= -5V 40 IC= -7A ; VCE= -5V MAX UNIT 15 VCB= -10V; ftest= 1MHz IC= -2A ; VCE= -5V 140 900 pF 6 MHz