NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| 2SB860 | Hitachi Semiconductor | Silicon PNP Transistor |
5 pages, |
Original |  |
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| 2SB860 | Hitachi Semiconductor | Silicon PNP Triple Diffused |
5 pages, |
Original | |
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| 2SB860 | N/A | Shortform Data and Cross References (Misc Datasheets) |
1 pages, |
Scan | |
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| 2SB860 | N/A | Shortform IC and Component Datasheets (Plus Cross Reference Data) |
1 pages, |
Scan | |
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| 2SB860 | N/A | The Japanese Transistor Manual 1981 |
2 pages, |
Scan | |
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| 2SB860 | N/A | Transistor Substitution Data Book 1993 |
1 pages, |
Scan | |
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| 2SB860 | N/A |
2 pages, |
Scan | |
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| 2SB860 | N/A | The Transistor Manual (Japanese) 1993 |
2 pages, |
Scan | |
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| 2SB860 | Renesas Technology / Hitachi Semiconductor | Silicon PNP Triple Diffused |
6 pages, |
Original | |
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| 2SB860 | Renesas Technology / Hitachi Semiconductor | Silicon PNP Triple Diffused |
6 pages, |
Original | |
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: JMnic Product Specification 2SB860 Silicon PNP Power Transistors DESCRIPTION With TO-220C package Complement to type 2SD1137 2SD1137 APPLICATIONS Low frequency power amplifier TV vertical , temperature -45~150 JMnic Product Specification 2SB860 Silicon PNP Power Transistors , JMnic Product Specification 2SB860 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 JMnic Product Specification 2SB860 ... | Original |
4 pages, |
2SD1137 2SB860 power transistors 2SB860 abstract |
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| Abstract: SavantIC Semiconductor Product Specification 2SB860 Silicon PNP Power Transistors DESCRIPTION ·With TO-220C package ·Complement to type 2SD1137 2SD1137 APPLICATIONS ·Low frequency power amplifier , Storage temperature -45~150 SavantIC Semiconductor Product Specification 2SB860 Silicon , Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 2SB860 SavantIC Semiconductor Product Specification 2SB860 Silicon PNP Power Transistors 4 ... | Original |
4 pages, |
2SD1137 2SB860 2SB860 abstract |
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| Abstract: Inchange Semiconductor Product Specification 2SB860 Silicon PNP Power Transistors DESCRIPTION With TO-220C package Complement to type 2SD1137 2SD1137 APPLICATIONS Low frequency power amplifier TV , Inchange Semiconductor Product Specification 2SB860 Silicon PNP Power Transistors , 2SB860 Silicon PNP Power Transistors PACKAGE OUTLINE TOR UC OND IC SEM GE , Product Specification 2SB860 Silicon PNP Power Transistors OND IC TOR UC SEM ... | Original |
4 pages, |
2SD1137 2SB860 2SB860 abstract |
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| Abstract: HITACHI 2SB860 SILICON PNP TRIPLE DIFFUSED LOW FREQUENCY POWER AMPLIFIER TV VERTICAL DEFLECTION OUTPUT COMPLEMENTARY PAIR WITH 2SD1137 2SD1137 1. Sim 2. Collector (Flange) J. Emitter (DiiiKiiiions in Dim) (JEDEC TO-22QAB) I ABSOLUTE MAXIMUM RATINGS (Tu=25°C) Item Symbol 2SB860 Unit Collector io Iwse voliage VCBO -100 V Collector io emitter voliage VCKO -100 V Emitter to base voltage Vebo -4 V Collector , HITACHI 2SB860 AREA OF SAFE OPERATION - Zc- 9V. A S1, 1 ... | OCR Scan |
2 pages, |
2SD1137 2SB860 LTWk 2SB860 abstract |
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| Abstract: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB860 DESCRIPTION ·Collector Current: IC= -4A ·Low Collector Saturation Voltage : VCE(sat)= -1.0V(Max)@IC= -1A ·High Collector Power Dissipation ·Complement to Type 2SD1137 2SD1137 APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL scs .i w , INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB860 ELECTRICAL CHARACTERISTICS TC=25 ... | Original |
2 pages, |
2SD1137 2SB860 2SB860 abstract |
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| Abstract: 2SB860 Silicon PNP Triple Diffused ADE-208-861 ADE-208-861 (Z) 1st. Edition Sep. 2000 Application Low , Note: 1. Value at TC = 25癈 2SB860 Electrical Characteristics (Ta = 25癈) Item Symbol Min , �01 � � � � �0 �0 �000 Collector to emitter voltage VCE (V) 2SB860 DC Current Transfer Ratio , 3 2SB860 Package Dimensions Unit: mm 11.5 MAX 2.79 � 0.2 10.16 � 0.2 9.5 3.6 -0.08 , Hitachi Code JEDEC EIAJ Mass (reference value) 4 TO-220AB Conforms Conforms 1.8 g 2SB860 ... | Original |
5 pages, |
2SD1137 2SB860 ADE-208-861 2SB860 abstract |
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| Abstract: products contained therein. 2SB860 Silicon PNP Triple Diffused ADE-208-861 ADE-208-861 (Z) 1st. Edition , 癈 Storage temperature Tstg � to +150 癈 Note: 1. Value at TC = 25癈 2SB860 , Collector to emitter voltage VCE (V) 2SB860 DC Current Transfer Ratio vs. Collector Current Typical , �01 �03 �1 �3 �0 � Collector current IC (A) � 3 2SB860 When using this document, keep the ... | Original |
6 pages, |
2SD1137 2SB860 datasheet abstract |
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| Abstract: 2SB860 Silicon PNP Triple Diffused Application Low frequency power amplifier TV vertical deflection output complementary pair with 2SD1137 2SD1137 Outline TO-220AB 1 1. Base 2. Collector (Flange) 3. Emitter 2 3 Absolute Maximum Ratings (Ta = 25癈) Item Symbol Rating Unit , 25癈 2SB860 Electrical Characteristics (Ta = 25癈) Item Symbol Min Typ Max Unit , � � � �0 �0 �000 Collector to emitter voltage VCE (V) 2SB860 DC Current Transfer Ratio vs. ... | Original |
5 pages, |
2SD1137 2SB860 2SB860 abstract |
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| Abstract: HITACHI 2SD1137 2SD1137 SILICON NPN TRIPLE DIFFUSED LOW FREQUENCY POWER AMPLIFIER TV VERTICAL DEFLECTION OUTPUT COMPLEMENTARY PAIR WITH 2SB860 EI 1 L -j \ ,+O.t 1.27 I- Eh« 2. COHclU« (lltingc) X E mill« (Dimensions in mm) (JEDEC TO-220 AB) I ABSOLUTE MAXIMUM RATINGS (Ta=25°C; Item Symbol 2SD1I37 2SD1I37 Unit Collector io base voltage VCBQ 100 V Collector to emitter voltage VCEO 100 V Emitter to base voltage VEBO 4 V Collector current 1c 4 A Collector peak current ICipcak) 5 A Collector ... | OCR Scan |
2 pages, |
2SD1137 2SB860 2SD1137 abstract |
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| Abstract: 2SB 1090 - b a 2SB92QI 2SB92QI 2SB595 2SB595 2SB860 2SB950A 2SB950A 2SB1293 2SB1293 2SB 1091 B ÍL 2SB882 2SB882 2SB675 2SB675 2SB975 2SB975 2SBU0S ... | OCR Scan |
1 pages, |
2SB1370 2SB536 2SA122 2SB601 2S8834 NEC 2SA1706 2SB673 2SB676 2SB880 2SB882 2SB950 2SB975 1091 2S8834 1086a 2SA1706 abstract |
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| Abstract: - 55 - fi « Type No. tt « Manuf. = SANYO X 2 TOSHIBA b m NEC S iL HITACHI « ± a FUJITSU fé T MATSUSHITA H m MITSUBISHI - - a ROHM 2SB 858 0 íi 2SB824 2SB824 2SB596 2SB596 2SB703 2SB703 2SB942 2SB942 2SB1334 2SB1334 2SB 859 a i 2SB920 2SB920 2SB595 2SB595 2SB703A 2SB703A 2SB942A 2SB942A 2SA1634 2SA1634 2SB 860 in 2SB920 2SB920 2SB595 2SB595 2SB703A 2SB703A 2SB942A 2SB942A 2SB1293 2SB1293 2SB 861 ED 2SA968B 2SA968B 2SA1006A 2SA1006A 2SB1085A 2SB1085A 2SB 862 2SB885 2SB885 2SB601 2SB601 2SB1104 2SB1104 2SB1339 2SB1339 2SB 863 m 2 2SA1232 2SA1232 2SB 864 e w 2SA1015 2SA1015 2SA733 2SA733 2SA1039 2SA1039 2SB 866 = m 2SA1193 2SA1193ÍK) 2SB 867 - fé T 2SB920 2SB920 ... | OCR Scan |
1 pages, |
2sa111 2SA1634 2SA951A 2SB1293 2SB1334 2SB595 2SB596 2SB703 2SB703A 2SB824 2SB897 K 872 2SB920 2SB942A 2SB942 2SB824 abstract |
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| Abstract: SA1209 2SB694 2sb1075 2sb 689 - B iL 2sb507 2sb595 2sa1069a 2sb860 2sb1293 2sb 690 - b iL 2sb507 2sb595 2sa1069a ... | OCR Scan |
1 pages, |
2SB688 2SB791 2SB886 2SB849 2SB686 2SB681 2SC4341 2SA818 datasheet abstract |
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| Abstract: SavantIC Semiconductor Product Specification 2SD1137 2SD1137 Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·Complement to type 2SB860 APPLICATIONS ·Low frequency power amplifier TV vertical deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 100 V ... | Original |
5 pages, |
2SD1137 2SB860 2SD1137 abstract |
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| Part | Manufacturer | Description | Shortform Datasheet | Ordering |
| 2SB860 | N/A | Silicon PNP | |
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| 2SB860 | N/A | High Power, High Voltage, General Purpose | |
| Fairchild Part | Orderable | Industry Part | Manufacturer | Type | Family | Description |
| BD240A | BD240A Buy | 2SB860 Buy | Hitachi | Close | PowerBJT | PNP Epitaxial Silicon Transistor |
| BD240B | BD240B Buy | 2SB860 Buy | Hitachi | Close | PowerBJT | PNP Epitaxial Silicon Transistor |
| BD240C | BD240C Buy | 2SB860 Buy | Hitachi | Close | PowerBJT | PNP Epitaxial Silicon Transistor |
| BD242B | BD242B Buy | 2SB860 Buy | Hitachi | Close | PowerBJT | PNP Epitaxial Silicon Transistor |
| BD242C | BD242C Buy | 2SB860 Buy | Hitachi | Close | PowerBJT | PNP Epitaxial Silicon Transistor |
| BD244A | BD244A Buy | 2SB860 Buy | Hitachi | Close | PowerBJT | PNP Epitaxial Silicon Transistor |
| BD244B | BD244B Buy | 2SB860 Buy | Hitachi | Close | PowerBJT | PNP Epitaxial Silicon Transistor |
| BD244C | BD244C Buy | 2SB860 Buy | Hitachi | Close | PowerBJT | PNP Epitaxial Silicon Transistor |
| KSA1010 | KSA1010 Buy | 2SB860 Buy | Hitachi | Close | PowerBJT | PNP Epitaxial Silicon Transistor |
| KSA614 | KSA614O Buy | 2SB860 Buy | Hitachi | Close | PowerBJT | PNP Epitaxial Silicon Transistor |
| NTE Electronics Part | Industry Part |
| Part | Similar Part | Notes |
| 2SB860 Buy | 121-969 Buy | |
| 2SB860 Buy | 2N6047 Buy | |
| 2SB860 Buy | 2N6476 Buy | |
| 2SB860 Buy | 2SA663 Buy | |
| 2SB860 Buy | 2SB1090 Buy | |
| 2SB860 Buy | 2SB595 Buy | |
| 2SB860 Buy | 2SB682 Buy | |
| 2SB860 Buy | 2SB703 Buy | |
| 2SB860 Buy | 2SB859 Buy | |
| 2SB860 Buy | 2SB942A Buy |