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Part : 2SB857C-E Supplier : Renesas Electronics Manufacturer : Rochester Electronics Stock : 1,198 Best Price : $1.85 Price Each : $2.28
Part : 2SB857C(E) Supplier : Renesas Electronics Manufacturer : Chip1Stop Stock : 190 Best Price : $7.51 Price Each : $9.38
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2SB857 Datasheet

Part Manufacturer Description PDF Type
2SB857 Hi-Sincerity Mocroelectronics PNP Epitaxial Planar Transistor Original
2SB857 Hitachi Semiconductor Silicon PNP Triple Diffused Original
2SB857 Hitachi Semiconductor Silicon PNP Transistor Original
2SB857 Renesas Technology Silicon PNP Triple Diffused Original
2SB857 Renesas Technology Silicon PNP Triple Diffused Original
2SB857 Various Russian Datasheets Transistor Original
2SB857 Continental Device India TO-220 PNP Power Package Transistors Scan
2SB857 N/A Transistor Shortform Datasheet & Cross References Scan
2SB857 N/A Shortform Transistor PDF Datasheet Scan
2SB857 N/A Japanese Transistor Cross References (2S) Scan
2SB857 N/A Cross Reference Datasheet Scan
2SB857 N/A The Transistor Manual (Japanese) 1993 Scan
2SB857 N/A Transistor Substitution Data Book 1993 Scan
2SB857 N/A The Japanese Transistor Manual 1981 Scan
2SB857 N/A Shortform Data and Cross References (Misc Datasheets) Scan
2SB857 N/A Scan
2SB857 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
2SB857B Renesas Technology Silicon PNP Triple Diffused Original
2SB857B Continental Device India Semiconductor Device Data Book 1996 Scan
2SB857B Continental Device India TO-220 PNP Power Package Transistors Scan
Showing first 20 results.

2SB857

Catalog Datasheet MFG & Type PDF Document Tags

T6C transistor

Abstract: transistor 206 : 2SB857L ORDERING INFORMATION Order Number Normal Lead Free Plating 2SB857-x-T6C-K 2SB857L-x-T6C-K 2SB857-x-TN3-R 2SB857L-x-TN3-R 2SB857-x-TN3-T 2SB857L-x-TN3-T Package TO-126C TO-252 TO-252 Pin Assignment 1 2 3 E C B B C E B C E Packing Bulk Tape Reel Tube 2SB857L-x-T6C-K , UNISONIC TECHNOLOGIES CO., LTD 2SB857 PNP SILICON TRANSISTOR SILICON PNP TRANSISTOR , -206,C 2SB857 PNP SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (Ta=25) PARAMETER Collector-Base
Unisonic Technologies
Original
T6C transistor transistor 206 2SB857- 2SB857L- QW-R217-206

2sb857

Abstract: 2sb858 2SB857, 2SB858 Silicon PNP Triple Diffused HITACHI Application Low frequency power , = 25°C Symbol VC B Q VC E Q VE B Q lc lC (p e a k | Pc*1 Tj Tstg 2SB857 -70 -50 -5 -4 -8 40 , 2SB857,2SB858 Electrical Characteristics Item Collector to base breakdown voltage Collector to emitter , = 2 5 °C ) 2SB857 Symbol ^(BR)CBO 2SB858 Max - - - -1 Min -7 0 -5 0 -5 Typ - , . The 2SB857 and 2SB858 are grouped by hF E 1 as follows. 2. B 60 to 120 C Pulse test D 100 to 200 160
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OCR Scan
2SD1133 2SD1134 D-85622

Hitachi DSA001650

Abstract: 2SB857, 2SB858 Silicon PNP Triple Diffused Application Low frequency power amplifier , . Emitter 2 3 Absolute Maximum Ratings (Ta = 25°C) Ratings Item Symbol 2SB857 2SB858 , Tstg ­45 to +150 ­45 to +150 °C Note: 1. Value at TC = 25°C 2SB857, 2SB858 Electrical Characteristics (Ta = 25°C) 2SB857 2SB858 Item Symbol Min Typ Max Min Typ , Collector to emitter saturation voltage hFE1* 1 2 2 2 Notes: 1. The 2SB857 and 2SB858 are
Hitachi
Original
Hitachi DSA001650

transistor 206

Abstract: 2sb857 UNISONIC TECHNOLOGIES CO., LTD 2SB857 SILICON PNP TRANSISTOR DESCRIPTION PNP SILICON TRANSISTOR Low frequency power amplifier. *Pb-free plating product number: 2SB857L ORDERING INFORMATION Order Number Normal Lead Free Plating 2SB857-x-T6C-A-K 2SB857L-x-T6C-A-K 2SB857-x-TN3-F-R 2SB857L-x-TN3-F-R 2SB857-x-TN3-F-T 2SB857L-x-TN3-F-T Package TO-126C TO-252 TO-252 Pin Assignment 1 2 3 E C B B C E B C E , 4 QW-R217-206,B 2SB857 ABSOLUTE MAXIMUM RATING (Ta=25) SYMBOL VCBO VCEO VEBO IC IC(PEAK
Unisonic Technologies
Original
100MH

2SB557 TOSHIBA

Abstract: 2SB1314 2SA683 2SB1035 2SA934 2S8 565 . B ÃL 2SB596 2SA1069 2SB857 2SB1371 2SB1334 2SB 566 y B ÃL 2SB633 2SB596 2SB703 2SB857 2SB1334 2SB 566AK B ÃL 2SB1334 2SB 56 6 K ni 2SB1334 2SB 567 a , 572 â'ž =E hn-5 2SB507 2SB596 2SB857 2SB1314 2SB1369 2SB 573 ^ ihö-7 2SB507 2SB596 2SB857 2SB1314 2SB1369 2SB 574 íhO-7 2SB507 2SB596 2SB857 2SB 575 ï ha-5 2SB824 2SB595 2SB857 2SB 576 ' ï hn-5 2SB824 2SB595 2SB857 2SB 577 , =E haâ'"7 2SB920L 2SB595 2SB857 2SB 578 -
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OCR Scan
2SA1634 2SA496 2SB861 2SB1186A 2SB546A 2SB557 2SB557 TOSHIBA toshiba 2sb554 2sa483 2SB554 2SB544 2SB562 2SA839 9SR547A

2SB857

Abstract: 2SB858 2SB857, 2SB858 Silicon PNP Triple Diffused Application Low frequency power amplifier , . Emitter 2 3 Absolute Maximum Ratings (Ta = 25°C) Ratings Item Symbol 2SB857 2SB858 , Tstg ­45 to +150 ­45 to +150 °C Note: 1. Value at T C = 25°C 2SB857, 2SB858 Electrical Characteristics (Ta = 25°C) 2SB857 2SB858 Item Symbol Min Typ Max Min Typ , transfer ratio hFE1* Collector to emitter saturation voltage 1 Notes: 1. The 2SB857 and 2SB858
Hitachi Semiconductor
Original
Hitachi DSA00333

2SB857

Abstract: 2SB858 JMnic Product Specification 2SB857 2SB858 Silicon PNP Power Transistors DESCRIPTION , CONDITIONS Open emitter Collector-emitter voltage 2SB857 Emitter-base voltage UNIT -70 V , =25 JMnic Product Specification 2SB857 2SB858 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CEO PARAMETER CONDITIONS 2SB857 Collector-emitter , Specification 2SB857 2SB858 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions
JMnic
Original
2SD1133/1134

2SB857

Abstract: transistor 2SB857 UNISONIC TECHNOLOGIES CO., LTD 2SB857 PNP SILICON TRANSISTOR SILICON PNP TRANSISTOR DESCRIPTION Low frequency power amplifier. *Pb-free plating product number: 2SB857L ORDERING INFORMATION Order Number Normal Lead Free Plating 2SB857-x-T6C-K 2SB857L-x-T6C-K 2SB857-x-TN3-R 2SB857L-x-TN3-R 2SB857-x-TN3-T 2SB857L-x-TN3-T www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd , Tape Reel Tube 1 of 4 QW-R217-006,C 2SB857 PNP SILICON TRANSISTOR ABSOLUTE MAXIMUM
Unisonic Technologies
Original
transistor 2SB857 Unisonic Technologies R217

2SB857

Abstract: R217 UNISONIC TECHNOLOGIES CO., LTD 2SB857 PNP SILICON TRANSISTOR SILICON PNP TRANSISTOR DESCRIPTION Low frequency power amplifier. Lead-free: 2SB857L Halogen-free:2SB857G ORDERING INFORMATION Normal 2SB857-x-T6C-K 2SB857-x-TA3-T 2SB857-x-TN3-R Order Number Lead Free 2SB857L-x-T6C-K 2SB857L-x-TA3-T 2SB857L-x-TN3-R Halogen Free 2SB857G-x-T6C-K 2SB857G-x-TA3-T 2SB857G-x-TN3-R , -006.E 2SB857 PNP SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (Ta=25°C) PARAMETER Collector-Base Voltages
Unisonic Technologies
Original
2SB857G-
Abstract: 2SB857,2SB858 Silicon PNP Triple Diffused HITACHI Application Low frequency power amplifier , 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Ratings Item Symbol 2SB857 2SB858 Unit , Tstg â'" to +150 45 - 4 5 to +150 °C Note: 1. Value at T c = 25°C 2SB857, 2SB858 Electrical Characteristics (Ta 25 °C) = 2SB857 Item 2SB858 Symbol Base to em itter voltage , = ^ V , E lc = -0 .5 A*2 VB E Gain bandwidth product fT Notes: 1. The 2SB857 and 2SB858 -
OCR Scan

Hitachi DSA002787

Abstract: 2SB857, 2SB858 Silicon PNP Triple Diffused Application Low frequency power amplifier , (peak) PC * Tj Tstg 1 2SB857 ­70 ­50 ­5 ­4 ­8 40 150 ­45 to +150 2SB858 ­70 ­60 ­5 ­4 ­8 40 150 ­45 to +150 Unit V V V A A W °C °C 2SB857, 2SB858 Electrical Characteristics (Ta = 25°C) 2SB857 Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base , C = ­0.5 A*2 Base to emitter voltage VBE Gain bandwidth product f T Notes: 1. The 2SB857 and
Hitachi
Original
Hitachi DSA002787

2sb857

Abstract: 2SB857,2SB858 Silicon PNP Triple Diffused HITACHI Application Low frequency power amplifier , VE B 0 lc lC (p e a k ) Pc*1 Tj Tstg 2SB857 -7 0 -5 0 -5 2SB858 -7 0 -6 0 -5 Unit V V V A A W °C °C -A -8 40 150 - 4 5 to +150 -A -8 40 150 - 4 5 to +150 2SB857, 2SB858 Electrical Characteristics (Ta = 25 °C) 2SB857 Item Collector to base breakdown voltage Collector to , : 1. The 2SB857 and 2SB858 are grouped by hF E 1 as follows. 2. Pulse test B 60 to 120 C D
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OCR Scan

2SB858

Abstract: 2SB857 2SB857, 2SB858 Silicon PNP Triple Diffused ADE-208-859 (Z) 1st. Edition Sep. 2000 , °C) Ratings Item Symbol 2SB857 2SB858 Unit Collector to base voltage VCBO ­70 ­70 , : 1. Value at TC = 25°C 2SB857, 2SB858 Electrical Characteristics (Ta = 25°C) 2SB857 2SB858 , voltage 1 Notes: 1. The 2SB857 and 2SB858 are grouped by h FE1 as follows. 2. Pulse test B C , power dissipation Pc (W) 60 2SB857 2SB858 ­2 ­5 ­10 ­20 ­50 ­100 Collector to emitter Voltage
Hitachi Semiconductor
Original
DSA003644

2sb857

Abstract: 2SB858 SavantIC Semiconductor Product Specification 2SB857 2SB858 Silicon PNP Power Transistors , voltage VCEO CONDITIONS Open emitter Collector-emitter voltage 2SB857 Emitter-base voltage , ~150 TC=25 SavantIC Semiconductor Product Specification 2SB857 2SB858 Silicon PNP Power , CONDITIONS 2SB857 Collector-emitter breakdown voltage MIN TYP. MAX UNIT -50 IC , Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 2SB857
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Original
2sb858 datasheet

2SB857

Abstract: 2SB858 Inchange Semiconductor Product Specification 2SB857 2SB858 Silicon PNP Power Transistors , Open emitter 2SB857 VCEO TOR UC CONDITIONS TC=25 Inchange Semiconductor Product Specification 2SB857 2SB858 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CEO PARAMETER CONDITIONS 2SB857 Collector-emitter breakdown voltage , 15 MHz Inchange Semiconductor Product Specification 2SB857 2SB858 Silicon PNP Power
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Original
Abstract: UNISO TE NIC CHNO G SCO LTD LO IE ., 2SB857 PNP SILICON TRANSISTOR SI LI CON PN P T RAN SI ST OR Ì DESCRI PT I ON Low frequency power amplifier. Lead-free: 2SB857L Halogen-free:2SB857G Ì ORDERI N G I N FORM AT I ON Normal 2SB857-x-T6C-K 2SB857-x-TA3-T 2SB857-x-TN3-R Order Number Lead Free 2SB857L-x-T6C-K 2SB857L-x-TA3-T 2SB857L-x-TN3-R Halogen Free 2SB857G-x-T6C-K 2SB857G-x-TA3-T 2SB857G-x-TN3-R www.unisonic.com.tw Copyright © 2009 Unisonic Technologies Co., Ltd Unisonic Technologies
Original

2SB857

Abstract: 2SB858 HITACHI 2SB857, 2SB858 SILICON PNP TRIPLE DIFFUSED LOW FREQUENCY POWER AMPLIFIER , limitier (Dimensions lit mm) (JEDEC TO-22QAB) â  ABSOLUTE MAXIMUM RATINGS (Ta^25*C) Item Symbol 2SB857 , CHARACTERISTICS (Ta=25aC) Jiem Symlwjl Test Condition 2SB857 2SB858 Unii min, typ. max. min. ' typ , 2SB857 and 2SB858 are grouped by h rei as follows. * Pulse Test _ B C D 60 to 120 100 10 200 160 io 320 HITACHI 2SB857, 2SB858 C'ollcckw io l'initier voltige V(r: (Vj COLLECTOR TO
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OCR Scan
25B857 2SI3B58

transistor 2SB857

Abstract: 2SB857 products contained therein. 2SB857, 2SB858 Silicon PNP Triple Diffused ADE-208-859 (Z) 1st , Maximum Ratings (Ta = 25°C) Ratings Item Symbol 2SB857 2SB858 Unit Collector to base , °C Note: 1. Value at TC = 25°C 2SB857, 2SB858 Electrical Characteristics (Ta = 25°C) 2SB857 2SB858 Item Symbol Min Typ Max Min Typ Max Unit Test conditions , saturation voltage 1 Notes: 1. The 2SB857 and 2SB858 are grouped by h FE1 as follows. 2. Pulse test B
Renesas Technology
Original

2SD1134

Abstract: 2SB857 products contained therein. 2SB857, 2SB858 Silicon PNP Triple Diffused ADE-208-859 (Z) 1st , Maximum Ratings (Ta = 25°C) Ratings Item Symbol 2SB857 2SB858 Unit Collector to base , °C Note: 1. Value at TC = 25°C 2SB857, 2SB858 Electrical Characteristics (Ta = 25°C) 2SB857 2SB858 Item Symbol Min Typ Max Min Typ Max Unit Test conditions , saturation voltage 1 Notes: 1. The 2SB857 and 2SB858 are grouped by h FE1 as follows. 2. Pulse test B
Renesas Technology
Original

transistor 2SB857

Abstract: 2SB857 isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB857 DESCRIPTION ·Collector Current: IC= -4A ·Low Collector Saturation Voltage : VCE(sat)= -1.0V(Max)@IC= -2A ·High Collector Power Dissipation ·Complement to Type 2SD1133 APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE , isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB857
INCHANGE Semiconductor
Original

2SB857

Abstract: 2SB858 products contained therein. 2SB857, 2SB858 Silicon PNP Triple Diffused ADE-208-859 (Z) 1st , Maximum Ratings (Ta = 25°C) Ratings Item Symbol 2SB857 2SB858 Unit Collector to base , °C Note: 1. Value at TC = 25°C 2SB857, 2SB858 Electrical Characteristics (Ta = 25°C) 2SB857 2SB858 Item Symbol Min Typ Max Min Typ Max Unit Test conditions , saturation voltage 1 Notes: 1. The 2SB857 and 2SB858 are grouped by h FE1 as follows. 2. Pulse test B
Renesas Electronics
Original
Showing first 20 results.