Search Stock
Shift+Click on the column header for multi-column sorting
Part |
Manufacturer |
Supplier |
Stock |
Best Price |
Price Each |
Ordering |
|---|---|---|---|---|---|---|
| Part : 2SB857C-E | Supplier : Renesas Electronics | Manufacturer : Rochester Electronics | Stock : 1,198 | Best Price : $1.85 | Price Each : $2.28 |
|
| Part : 2SB857C(E) | Supplier : Renesas Electronics | Manufacturer : Chip1Stop | Stock : 190 | Best Price : $7.51 | Price Each : $9.38 |
|
Shipping cost not included. Currency conversions are estimated. |
2SB857 Datasheet
| Part | Manufacturer | Description | Type | |
|---|---|---|---|---|
| 2SB857 | Hi-Sincerity Mocroelectronics | PNP Epitaxial Planar Transistor |
|
Original |
| 2SB857 | Hitachi Semiconductor | Silicon PNP Triple Diffused |
|
Original |
| 2SB857 | Hitachi Semiconductor | Silicon PNP Transistor |
|
Original |
| 2SB857 | Renesas Technology | Silicon PNP Triple Diffused |
|
Original |
| 2SB857 | Renesas Technology | Silicon PNP Triple Diffused |
|
Original |
| 2SB857 | Various Russian Datasheets | Transistor |
|
Original |
| 2SB857 | Continental Device India | TO-220 PNP Power Package Transistors |
|
Scan |
| 2SB857 | N/A | Transistor Shortform Datasheet & Cross References |
|
Scan |
| 2SB857 | N/A | Shortform Transistor PDF Datasheet |
|
Scan |
| 2SB857 | N/A | Japanese Transistor Cross References (2S) |
|
Scan |
| 2SB857 | N/A | Cross Reference Datasheet |
|
Scan |
| 2SB857 | N/A | The Transistor Manual (Japanese) 1993 |
|
Scan |
| 2SB857 | N/A | Transistor Substitution Data Book 1993 |
|
Scan |
| 2SB857 | N/A | The Japanese Transistor Manual 1981 |
|
Scan |
| 2SB857 | N/A | Shortform Data and Cross References (Misc Datasheets) |
|
Scan |
| 2SB857 | N/A |
|
Scan | |
| 2SB857 | N/A | Shortform IC and Component Datasheets (Plus Cross Reference Data) |
|
Scan |
| 2SB857B | Renesas Technology | Silicon PNP Triple Diffused |
|
Original |
| 2SB857B | Continental Device India | Semiconductor Device Data Book 1996 |
|
Scan |
| 2SB857B | Continental Device India | TO-220 PNP Power Package Transistors |
|
Scan |
Showing first 20 results. Show More |
2SB857
| Catalog Datasheet | MFG & Type | Document Tags | |
|---|---|---|---|
T6C transistorAbstract: transistor 206 : 2SB857L ORDERING INFORMATION Order Number Normal Lead Free Plating 2SB857-x-T6C-K 2SB857L-x-T6C-K 2SB857-x-TN3-R 2SB857L-x-TN3-R 2SB857-x-TN3-T 2SB857L-x-TN3-T Package TO-126C TO-252 TO-252 Pin Assignment 1 2 3 E C B B C E B C E Packing Bulk Tape Reel Tube 2SB857L-x-T6C-K , UNISONIC TECHNOLOGIES CO., LTD 2SB857 PNP SILICON TRANSISTOR SILICON PNP TRANSISTOR , -206,C 2SB857 PNP SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (Ta=25) PARAMETER Collector-Base |
Unisonic Technologies Original |
|
T6C transistor transistor 206 2SB857- 2SB857L- QW-R217-206 |
2sb857Abstract: 2sb858 2SB857, 2SB858 Silicon PNP Triple Diffused HITACHI Application Low frequency power , = 25°C Symbol VC B Q VC E Q VE B Q lc lC (p e a k | Pc*1 Tj Tstg 2SB857 -70 -50 -5 -4 -8 40 , 2SB857,2SB858 Electrical Characteristics Item Collector to base breakdown voltage Collector to emitter , = 2 5 °C ) 2SB857 Symbol ^(BR)CBO 2SB858 Max - - - -1 Min -7 0 -5 0 -5 Typ - , . The 2SB857 and 2SB858 are grouped by hF E 1 as follows. 2. B 60 to 120 C Pulse test D 100 to 200 160 |
- OCR Scan |
|
2SD1133 2SD1134 D-85622 |
Hitachi DSA001650Abstract: 2SB857, 2SB858 Silicon PNP Triple Diffused Application Low frequency power amplifier , . Emitter 2 3 Absolute Maximum Ratings (Ta = 25°C) Ratings Item Symbol 2SB857 2SB858 , Tstg 45 to +150 45 to +150 °C Note: 1. Value at TC = 25°C 2SB857, 2SB858 Electrical Characteristics (Ta = 25°C) 2SB857 2SB858 Item Symbol Min Typ Max Min Typ , Collector to emitter saturation voltage hFE1* 1 2 2 2 Notes: 1. The 2SB857 and 2SB858 are |
Hitachi Original |
|
Hitachi DSA001650 |
transistor 206Abstract: 2sb857 UNISONIC TECHNOLOGIES CO., LTD 2SB857 SILICON PNP TRANSISTOR DESCRIPTION PNP SILICON TRANSISTOR Low frequency power amplifier. *Pb-free plating product number: 2SB857L ORDERING INFORMATION Order Number Normal Lead Free Plating 2SB857-x-T6C-A-K 2SB857L-x-T6C-A-K 2SB857-x-TN3-F-R 2SB857L-x-TN3-F-R 2SB857-x-TN3-F-T 2SB857L-x-TN3-F-T Package TO-126C TO-252 TO-252 Pin Assignment 1 2 3 E C B B C E B C E , 4 QW-R217-206,B 2SB857 ABSOLUTE MAXIMUM RATING (Ta=25) SYMBOL VCBO VCEO VEBO IC IC(PEAK |
Unisonic Technologies Original |
|
100MH |
2SB557 TOSHIBAAbstract: 2SB1314 2SA683 2SB1035 2SA934 2S8 565 . B ÃL 2SB596 2SA1069 2SB857 2SB1371 2SB1334 2SB 566 y B ÃL 2SB633 2SB596 2SB703 2SB857 2SB1334 2SB 566AK B ÃL 2SB1334 2SB 56 6 K ni 2SB1334 2SB 567 a , 572 â' =E hn-5 2SB507 2SB596 2SB857 2SB1314 2SB1369 2SB 573 ^ ihö-7 2SB507 2SB596 2SB857 2SB1314 2SB1369 2SB 574 ÃhO-7 2SB507 2SB596 2SB857 2SB 575 ï ha-5 2SB824 2SB595 2SB857 2SB 576 ' ï hn-5 2SB824 2SB595 2SB857 2SB 577 , =E haâ'"7 2SB920L 2SB595 2SB857 2SB 578 - |
- OCR Scan |
|
2SA1634 2SA496 2SB861 2SB1186A 2SB546A 2SB557 2SB557 TOSHIBA toshiba 2sb554 2sa483 2SB554 2SB544 2SB562 2SA839 9SR547A |
2SB857Abstract: 2SB858 2SB857, 2SB858 Silicon PNP Triple Diffused Application Low frequency power amplifier , . Emitter 2 3 Absolute Maximum Ratings (Ta = 25°C) Ratings Item Symbol 2SB857 2SB858 , Tstg 45 to +150 45 to +150 °C Note: 1. Value at T C = 25°C 2SB857, 2SB858 Electrical Characteristics (Ta = 25°C) 2SB857 2SB858 Item Symbol Min Typ Max Min Typ , transfer ratio hFE1* Collector to emitter saturation voltage 1 Notes: 1. The 2SB857 and 2SB858 |
Hitachi Semiconductor Original |
|
Hitachi DSA00333 |
2SB857Abstract: 2SB858 JMnic Product Specification 2SB857 2SB858 Silicon PNP Power Transistors DESCRIPTION , CONDITIONS Open emitter Collector-emitter voltage 2SB857 Emitter-base voltage UNIT -70 V , =25 JMnic Product Specification 2SB857 2SB858 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CEO PARAMETER CONDITIONS 2SB857 Collector-emitter , Specification 2SB857 2SB858 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions |
JMnic Original |
|
2SD1133/1134 |
2SB857Abstract: transistor 2SB857 UNISONIC TECHNOLOGIES CO., LTD 2SB857 PNP SILICON TRANSISTOR SILICON PNP TRANSISTOR DESCRIPTION Low frequency power amplifier. *Pb-free plating product number: 2SB857L ORDERING INFORMATION Order Number Normal Lead Free Plating 2SB857-x-T6C-K 2SB857L-x-T6C-K 2SB857-x-TN3-R 2SB857L-x-TN3-R 2SB857-x-TN3-T 2SB857L-x-TN3-T www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd , Tape Reel Tube 1 of 4 QW-R217-006,C 2SB857 PNP SILICON TRANSISTOR ABSOLUTE MAXIMUM |
Unisonic Technologies Original |
|
transistor 2SB857 Unisonic Technologies R217 |
2SB857Abstract: R217 UNISONIC TECHNOLOGIES CO., LTD 2SB857 PNP SILICON TRANSISTOR SILICON PNP TRANSISTOR DESCRIPTION Low frequency power amplifier. Lead-free: 2SB857L Halogen-free:2SB857G ORDERING INFORMATION Normal 2SB857-x-T6C-K 2SB857-x-TA3-T 2SB857-x-TN3-R Order Number Lead Free 2SB857L-x-T6C-K 2SB857L-x-TA3-T 2SB857L-x-TN3-R Halogen Free 2SB857G-x-T6C-K 2SB857G-x-TA3-T 2SB857G-x-TN3-R , -006.E 2SB857 PNP SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (Ta=25°C) PARAMETER Collector-Base Voltages |
Unisonic Technologies Original |
|
2SB857G- |
| Abstract: 2SB857,2SB858 Silicon PNP Triple Diffused HITACHI Application Low frequency power amplifier , 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Ratings Item Symbol 2SB857 2SB858 Unit , Tstg â'" to +150 45 - 4 5 to +150 °C Note: 1. Value at T c = 25°C 2SB857, 2SB858 Electrical Characteristics (Ta 25 °C) = 2SB857 Item 2SB858 Symbol Base to em itter voltage , = ^ V , E lc = -0 .5 A*2 VB E Gain bandwidth product fT Notes: 1. The 2SB857 and 2SB858 |
- OCR Scan |
|
|
Hitachi DSA002787Abstract: 2SB857, 2SB858 Silicon PNP Triple Diffused Application Low frequency power amplifier , (peak) PC * Tj Tstg 1 2SB857 70 50 5 4 8 40 150 45 to +150 2SB858 70 60 5 4 8 40 150 45 to +150 Unit V V V A A W °C °C 2SB857, 2SB858 Electrical Characteristics (Ta = 25°C) 2SB857 Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base , C = 0.5 A*2 Base to emitter voltage VBE Gain bandwidth product f T Notes: 1. The 2SB857 and |
Hitachi Original |
|
Hitachi DSA002787 |
2sb857Abstract: 2SB857,2SB858 Silicon PNP Triple Diffused HITACHI Application Low frequency power amplifier , VE B 0 lc lC (p e a k ) Pc*1 Tj Tstg 2SB857 -7 0 -5 0 -5 2SB858 -7 0 -6 0 -5 Unit V V V A A W °C °C -A -8 40 150 - 4 5 to +150 -A -8 40 150 - 4 5 to +150 2SB857, 2SB858 Electrical Characteristics (Ta = 25 °C) 2SB857 Item Collector to base breakdown voltage Collector to , : 1. The 2SB857 and 2SB858 are grouped by hF E 1 as follows. 2. Pulse test B 60 to 120 C D |
- OCR Scan |
|
|
2SB858Abstract: 2SB857 2SB857, 2SB858 Silicon PNP Triple Diffused ADE-208-859 (Z) 1st. Edition Sep. 2000 , °C) Ratings Item Symbol 2SB857 2SB858 Unit Collector to base voltage VCBO 70 70 , : 1. Value at TC = 25°C 2SB857, 2SB858 Electrical Characteristics (Ta = 25°C) 2SB857 2SB858 , voltage 1 Notes: 1. The 2SB857 and 2SB858 are grouped by h FE1 as follows. 2. Pulse test B C , power dissipation Pc (W) 60 2SB857 2SB858 2 5 10 20 50 100 Collector to emitter Voltage |
Hitachi Semiconductor Original |
|
DSA003644 |
2sb857Abstract: 2SB858 SavantIC Semiconductor Product Specification 2SB857 2SB858 Silicon PNP Power Transistors , voltage VCEO CONDITIONS Open emitter Collector-emitter voltage 2SB857 Emitter-base voltage , ~150 TC=25 SavantIC Semiconductor Product Specification 2SB857 2SB858 Silicon PNP Power , CONDITIONS 2SB857 Collector-emitter breakdown voltage MIN TYP. MAX UNIT -50 IC , Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 2SB857 |
- Original |
|
2sb858 datasheet |
2SB857Abstract: 2SB858 Inchange Semiconductor Product Specification 2SB857 2SB858 Silicon PNP Power Transistors , Open emitter 2SB857 VCEO TOR UC CONDITIONS TC=25 Inchange Semiconductor Product Specification 2SB857 2SB858 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CEO PARAMETER CONDITIONS 2SB857 Collector-emitter breakdown voltage , 15 MHz Inchange Semiconductor Product Specification 2SB857 2SB858 Silicon PNP Power |
- Original |
|
|
| Abstract: UNISO TE NIC CHNO G SCO LTD LO IE ., 2SB857 PNP SILICON TRANSISTOR SI LI CON PN P T RAN SI ST OR Ì DESCRI PT I ON Low frequency power amplifier. Lead-free: 2SB857L Halogen-free:2SB857G Ì ORDERI N G I N FORM AT I ON Normal 2SB857-x-T6C-K 2SB857-x-TA3-T 2SB857-x-TN3-R Order Number Lead Free 2SB857L-x-T6C-K 2SB857L-x-TA3-T 2SB857L-x-TN3-R Halogen Free 2SB857G-x-T6C-K 2SB857G-x-TA3-T 2SB857G-x-TN3-R www.unisonic.com.tw Copyright © 2009 Unisonic Technologies Co., Ltd |
Unisonic Technologies Original |
|
|
2SB857Abstract: 2SB858 HITACHI 2SB857, 2SB858 SILICON PNP TRIPLE DIFFUSED LOW FREQUENCY POWER AMPLIFIER , limitier (Dimensions lit mm) (JEDEC TO-22QAB) â ABSOLUTE MAXIMUM RATINGS (Ta^25*C) Item Symbol 2SB857 , CHARACTERISTICS (Ta=25aC) Jiem Symlwjl Test Condition 2SB857 2SB858 Unii min, typ. max. min. ' typ , 2SB857 and 2SB858 are grouped by h rei as follows. * Pulse Test _ B C D 60 to 120 100 10 200 160 io 320 HITACHI 2SB857, 2SB858 C'ollcckw io l'initier voltige V(r: (Vj COLLECTOR TO |
- OCR Scan |
|
25B857 2SI3B58 |
transistor 2SB857Abstract: 2SB857 products contained therein. 2SB857, 2SB858 Silicon PNP Triple Diffused ADE-208-859 (Z) 1st , Maximum Ratings (Ta = 25°C) Ratings Item Symbol 2SB857 2SB858 Unit Collector to base , °C Note: 1. Value at TC = 25°C 2SB857, 2SB858 Electrical Characteristics (Ta = 25°C) 2SB857 2SB858 Item Symbol Min Typ Max Min Typ Max Unit Test conditions , saturation voltage 1 Notes: 1. The 2SB857 and 2SB858 are grouped by h FE1 as follows. 2. Pulse test B |
Renesas Technology Original |
|
|
2SD1134Abstract: 2SB857 products contained therein. 2SB857, 2SB858 Silicon PNP Triple Diffused ADE-208-859 (Z) 1st , Maximum Ratings (Ta = 25°C) Ratings Item Symbol 2SB857 2SB858 Unit Collector to base , °C Note: 1. Value at TC = 25°C 2SB857, 2SB858 Electrical Characteristics (Ta = 25°C) 2SB857 2SB858 Item Symbol Min Typ Max Min Typ Max Unit Test conditions , saturation voltage 1 Notes: 1. The 2SB857 and 2SB858 are grouped by h FE1 as follows. 2. Pulse test B |
Renesas Technology Original |
|
|
transistor 2SB857Abstract: 2SB857 isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB857 DESCRIPTION ·Collector Current: IC= -4A ·Low Collector Saturation Voltage : VCE(sat)= -1.0V(Max)@IC= -2A ·High Collector Power Dissipation ·Complement to Type 2SD1133 APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE , isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB857 |
INCHANGE Semiconductor Original |
|
|
2SB857Abstract: 2SB858 products contained therein. 2SB857, 2SB858 Silicon PNP Triple Diffused ADE-208-859 (Z) 1st , Maximum Ratings (Ta = 25°C) Ratings Item Symbol 2SB857 2SB858 Unit Collector to base , °C Note: 1. Value at TC = 25°C 2SB857, 2SB858 Electrical Characteristics (Ta = 25°C) 2SB857 2SB858 Item Symbol Min Typ Max Min Typ Max Unit Test conditions , saturation voltage 1 Notes: 1. The 2SB857 and 2SB858 are grouped by h FE1 as follows. 2. Pulse test B |
Renesas Electronics Original |
|
Showing first 20 results. Show More |