ENN676D 2SB808/2SD1012 2SB808 91003TN /91098HA /1115MY/1283KI ITR08385 ITR08384 - Datasheet Archive

 

PNP/NPN Epitaxial Planar Silicon Transistors 2SB808/2SD1012 Low-Voltage Large-Current Amplifier Applications Package Dimensions

 

Ordering number:ENN676D ENN676D PNP/NPN Epitaxial Planar Silicon Transistors 2SB808/2SD1012 2SB808/2SD1012 Low-Voltage Large-Current Amplifier Applications Package Dimensions unit:mm 2033A [2SB808/2SD1012 2SB808/2SD1012] 2.2 3.0 4.0 15.0 0.6 1.8 0.4 0.5 0.4 0.4 0.7 ( ) : 2SB808 2SB808 3 1.3 1 : Emitter 2 : Collector 3 : Base SANYO : SPA 0.7 1 2 1.3 3.0 3.8 Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Collector-to-Base Voltage Conditions Ratings Unit VCBO VCEO (­)20 V (­)15 V VEBO IC (­)5 V (­)0.7 A Collector Current (Pulse) ICP (­)1.5 Collector Dissipation PC 250 mW 125 °C ­55 to +125 °C Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Junction Temperature Tj Storage Temperature Tstg A Electrical Characteristics at Ta = 25°C Parameter Symbol Conditions Ratings min typ max Unit Collector Cutoff Current ICBO VCB=(­)15V, IE=0 (­)1.0 µA Emitter Cutoff Current IEBO VEB=(­)4V, IC=0 (­)1.0 µA hFE1 VCE=(­)2V, IC=(­)50mA hFE2 VCE=(­)2V, IC=(­)500mA Pulse VCE=(­)10V, IC=(­)50mA DC Current Gain Gain-Bandwidth Product fT Common Base Output Capacitance Cob 160* 960* 80 VCB=(­)10V, f=1MHz 250 MHz (13) pF 8 pF Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 91003TN 91003TN (KT)/91098HA /91098HA (KT)/1115MY/1283KI /1115MY/1283KI, TS No.676­1/5 2SB808/2SD1012 2SB808/2SD1012 Continued from preceding page. Parameter Symbol Ratings Conditions VCE(sat)1 min max (­15) (­35) mV 10 25 mV (­60) (­120) mV 30 80 mV (­)0.8 (­)1.2 IC=(­)5mA, IB=(­)0.5mA Collector-to-Emitter Saturation Voltage VCE(sat)2 Base-to-Emitter Saturation Voltage IC=(­)100mA, IB=(­)10mA Collector-to-Emitter Breakdown Voltage VBE(sat) IC=(­)100mA, IB=(­)10mA V(BR)CBO IC=(­)10µA, IE=0 V(BR)CEO IC=(­)1mA, RBE= Emitter-to-Base Breakdown Votage V(BR)EBO Collector-to-Base Breakdown Voltage Unit typ V (­)20 V (­)5 IE=(­)10µA, IC=0 V (­)15 V * : The 2SB808/2SD1012 2SB808/2SD1012 are classified by 50mA hFE as follows : Rank F G hFE 160 to 320 280 to 560 H 280 to 560 480 to 960 IC - VCE -800 A 0m -5 -600 A m -10 -500 -6mA -400 -2mA -300 -1mA -200 -100 A 6m 600 4mA 500 2mA 400 300 1mA 200 100 IB=0 0 0 -0.1 -0.2 -0.3 -0.4 Collector-to-Emitter Voltage, VCE ­ V 40 20 0 0 0.2 0.4 0.6 0.8 Base-to-Emitter Voltage, VBE ­ V h I 0.1 1.0 ITR08385 ITR08385 0.2 0.3 0.4 0.5 Collector-to-Emitter Voltage, VCE ­ V 7 ITR08384 ITR08384 f T - IC 1000 Gain-Bandwidth Product, fT ­ MHz 2SD1012 2SD1012 2SB808 2SB808 80 60 0 ITR08383 ITR08383 VCE=5V (For PNP, minus sign is omitted.) IB=0 0 -0.5 IB - VBE 100 Base Current, IB ­ µA 2SD1012 2SD1012 700 A 0m -3 Collector Current, IC ­ mA Collector Current, IC ­ mA -700 IC - VCE 800 2SB808 2SB808 mA G 160 to 320 A F hFE 10 Rank 2SD1012 2SD1012 50m 2SB808 2SB808 VCE=10V (For PNP, minus sign is omitted.) 5 3 808 2SB 2 012 2SD1 100 7 5 3 2 10 1.0 2 3 5 7 2 10 3 Collector Current, IC ­ mA C b 5 7 100 ITR08386 ITR08386 V No.676­2/5 2SB808/2SD1012 2SB808/2SD1012 hFE - IC 1000 7 2SD1012 2SD1012 3 2SB808 2SB808 Output Capacitance, Cob ­ pF DC Current Gain, hFE 5 2 100 7 5 3 2 10 1.0 2 3 5 10 5 2 3 100 5 1000 Collector Current, IC ­ mA 2 3 1000 5 3 2 100 808 2 101 (For PNP, minus sign is omitted.) 2 3 5 10 2 3 5 2SD 1012 10 7 5 (For PNP, minus sign is omitted.) 2 3 5 7 2 10 2 3 ITR08388 ITR08388 ASO 2SB808 2SB808 / 2SD1012 2SD1012 ICP=1.5A 1.0 IC=0.7A 7 10 m 10 0m s s 5 3 DC 2 op era tio 0.1 n 7 5 2 10 5 1.0 808 3 2SD 2 2SB 3 Collector Current, IC ­ A 3 2 2SB 2 Collector-to-Base Voltage, VCB - V 5 3 3 ITR08387 ITR08387 IC / IB=10 5 f=1MHz 3 1.0 5 VCE(sat) - IC 10000 Collector-to-Emitter Saturation Voltage, VCE (sat) ­ mV 2 3 Cob - VCB 5 VCE=2V 100 2 Collector Current, IC ­ mA 3 5 1000 ITR08389 ITR08389 (For PNP, minus sign is omitted.) 0.01 2 3 5 7 1.0 2 3 5 7 2 10 Collector-to-Emitter Voltage, VCE ­ V 3 ITR08390 ITR08390 PC - Ta 320 2SB808 2SB808 / 2SD1012 2SD1012 Collector Dissipation, PC ­ mW 280 240 200 160 120 80 40 0 0 20 40 60 80 100 Ambient Temperature, Ta ­ °C 120 140 ITR09908 ITR09908 No.676­3/5 2SB808/2SD1012 2SB808/2SD1012 Sample Application Circuit : Low-voltage 3V (PO 120mW) ITL-OTL power amplifier. · Circuit configuration For obtaining an output of more than 100mW, the middle-point voltage at the output stage and the collector voltage of the driver transistor must be VCC/2. Therefore, the output stage is of quasi complementary configuration composed of npn/npn transistors. The phase is reversed by the 2SA608 2SA608 and the middle-point voltage are the output stage and the collector voltage of the driver transistor are more to be VCC/2 so that the output can be maximized. DS442 DS442×2 VCC=3V 100 1k 100µF + 6.3V 3.9k 100 10µF 6.3V + 270k + INPUT TR1 SP 8 150 27k D1 * R1 + 220µF 6.3V 330p 10µ 6.3V TR4 D2 TR3 TR2 TR5 22 15k 2SC536E 2SC536E, F 2SC536E 2SC536E 2SA608E 2SA608E, F 2SD1012F 2SD1012F, G×2 R1 : Used control idele current For R1=820. use rank F for [TR4, 5(2SD1012 2SD1012)] For R1=680. use rank G for [TR4, 5(2SD1012 2SD1012)] ITR09909 ITR09909 Main Specifications Characteristic Conditions f=400Hz f=1kHz Unit Current dissipation Quiescent, total current dissipation 11.0 to 15.5 11.0 to 15.5 mA Output power THD=10% 120 to 125 127 to 130 mW Votlage gain PO=10mW 43.3 to 45.5 43.5 to 45.7 dB Total harmonic distortion PO=50mW PO=10mW 1.4 to 2.6 1.3 to 2.5 % 10.4 to 20.5 11.0 to 21.0 k Input resistance Note : for above-mentioned hFE rank. PO - VIN Output Power, PO ­ mW 2 100 7 5 3 2 10 7 VCC=3V RL=8 f=1kHz 5 3 5 7 1.0 2 3 5 THD - PO 100 7 Input Voltage, VIN ­ mV 10 2 ITR08391 ITR08391 Total Harmonic Distortion, THD ­ % 3 VCC=3V RL=8 f=1kHz 7 5 3 2 10 7 5 3 2 1.0 3 5 7 10 2 3 5 7 100 Output Power, PO ­ mW 2 3 ITR08392 ITR08392 No.676­4/5 2SB808/2SD1012 2SB808/2SD1012 ICC - PO f response VCC=3V RL=8 0dB : 44.7dB / 1kHz 2 Response ­ dB 0 -2 5 Current Dissipation, ICC ­ mA 4 VCC=3V RL=8 f=1kHz 3 2 100 -4 -6 -8 7 5 3 2 -10 -12 10 3 5 7 100 2 3 5 7 1k 2 3 5 7 10k 2 3 Frequency, f ­ Hz ITR08393 ITR08393 3 5 7 10 2 3 5 7 100 Output Power, PO ­ mW 2 3 ITR08394 ITR08394 PO - VCC 5 RL=8 THD=10% f=1kHz 3 Output Power, PO ­ mW 5 7 100k 2 100 7 5 3 2 10 1.4 1.8 2.2 2.6 3.0 Supply Voltage, VCC ­ V 3.4 3.8 ITR08395 ITR08395 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of September, 2003. Specifications and information herein are subject to change without notice. PS No.676­5/5