2SB764 - Datasheet Archive

 

2SB764 TO-92MOD TRANSISTOR (PNP) FEATURES Power dissipation 1. EMITTER 2. COLLECTOR PCM: 0.9 W (Tamb=25) 3. BASE Collector

 

2SB764 2SB764 2SB764 2SB764 TO-92MOD TRANSISTOR (PNP) FEATURES Power dissipation 1. EMITTER 2. COLLECTOR PCM: 0.9 W (Tamb=25) 3. BASE Collector current ICM: -1 A Collector-base voltage -60 V V(BR)CBO: Operating and storage junction temperature range 123 TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol unless otherwise specified) Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=-10µA, IE=0 -60 V Collector-emitter breakdown voltage V(BR)CEO Ic=-1mA, IB=0 -50 V Emitter-base breakdown voltage V(BR)EBO IE=-10µA, IC=0 -5 V Collector cut-off current ICBO VCB=-50V, IE=0 -1 µA Emitter cut-off current IEBO VEB=-4V, IC=0 -1 µA hFE(1) VCE=-2V, IC=-50mA 60 hFE(2) VCE=-2V, IC=-1A 30 Collector-emitter saturation voltage VCE(sat) IC=-500mA, IB=-50mA -0.7 V Base-emitter saturation voltage VBE IC=-500mA, IB=-50mA -1.2 V DC current gain Transition frequency Collector output capacitance sat 320 fT VCE=-10V, IC=-50mA 150 MHz Cob VCB=-10V, IE=0, f=1MHz 20 pF CLASSIFICATION OF hFE(1) Rank Range WEJ ELECTRONIC CO. D E F 60-120 100-200 160-320 Http:// www.wej.cn E-mail:wej@yongerjia.com