2SB755 MT-200 2SD845 -150V - Datasheet Archive

 

Product Specification 2SB755 Silicon PNP Power Transistors DESCRIPTION With MT-200 package Complement to type 2SD845 High

 

Inchange Semiconductor Product Specification 2SB755 2SB755 Silicon PNP Power Transistors DESCRIPTION With MT-200 MT-200 package Complement to type 2SD845 2SD845 High transition frequency High breakdown voltage :VCEO=-150V -150V(min) APPLICATIONS For power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (MT-200 MT-200) and symbol SYMBOL VCBO VCEO VEBO PARAMETER Collector-base voltage CONDITIONS VALUE UNIT Open emitter -150 V Open base -150 V -5 V SEM GE HAN INC Collector-emitter voltage Emitter-base voltage TOR UC OND IC Absolute maximum ratings (Ta=25) Open collector IC Collector current -12 A IB Base current -1.2 A PC Collectorl power dissipation 120 W Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 Inchange Semiconductor Product Specification 2SB755 2SB755 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-0.1A; IB=0 -150 V V(BR)EBO Emitter-base breakdown voltage IE=-10mA; IC=0 -5 V Collector-emitter saturation voltage IC=-5 A;IB=-0.5 A -2.0 V VBE Base-emitter on voltage IC=-5A ; VCE=-5V -1.5 V ICBO Collector cut-off current VCB=-150V -150V; IE=0 -50 A IEBO Emitter cut-off current VEB=-5V; IC=0 -50 A hFE DC current gain IC=-1A ; VCE=-5V VCEsat fT COB CONDITIONS Transition frequency Output capacitance R 55-110 HAN INC O 80-160 2 MAX UNIT 160 20 MHz 450 pF TOR UC OND IC IE=0; VCB=-10V;f=1MHz TYP. 55 IC=-1A ; VCE=-10V SEM GE hFE classifications MIN Inchange Semiconductor Product Specification 2SB755 2SB755 Silicon PNP Power Transistors PACKAGE OUTLINE OND IC TOR UC SEM GE HAN INC Fig.2 Outline dimensions 3