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2SB755 Datasheet

Part Manufacturer Description PDF Type
2SB755 N/A PNP Transistor Original
2SB755 N/A Transistor Substitution Data Book 1993 Scan
2SB755 N/A The Japanese Transistor Manual 1981 Scan
2SB755 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
2SB755 N/A Shortform Data and Cross References (Misc Datasheets) Scan
2SB755 N/A Basic Transistor and Cross Reference Specification Scan
2SB755 N/A Transistor Shortform Datasheet & Cross References Scan
2SB755 N/A Shortform Transistor PDF Datasheet Scan
2SB755 N/A Japanese Transistor Cross References (2S) Scan
2SB755 N/A Cross Reference Datasheet Scan

2SB755

Catalog Datasheet MFG & Type PDF Document Tags

toshiba 2SB755

Abstract: 2SAB12 - 50 - S â'¬ Type No. ít « Maniif. H. n SANYO S 2; TOSHIBA B a NEC B iL HITACHI « ± a FUJITSU ® T MATSUSHITA H * MITSUBISHI â¡ â'" A BÃHM 2SB 698 - = $ 2SA950 2SA952 2SB561 2SA719 2SA1398 2SA1515 2SB 699 0 ÃL 2SB817 2SB 700 B ÌL 2SB817 2SB755 2SA1232 2SB 70OA B ÃL 2SB817 2SB755 2SB 702 â  B iL 2SB755 2SA1232 2SB 702A b ÌL 2SB756 2SB 703 B b 2SB595 2SA1634 2SB 703A b b 2SB595 2SB1293 2SB 705 , B m 2SB755 2SB 707 B % 2SB825
-
OCR Scan
2SA1181 2SAB12 2SB681 2SA1285 2SA818 2SA968 toshiba 2SB755 2SB681 TOSHIBA 2SB700b 2SB1289 2SB1455 2SA1313 2SA1052

2SB755

Abstract: 2SD845 JMnic Product Specification 2SB755 Silicon PNP Power Transistors DESCRIPTION With MT-200 package Complement to type 2SD845 High transition frequency High breakdown voltage :VCEO=-150V(min) APPLICATIONS For power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 , =25 JMnic Product Specification 2SB755 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless , TYP. 55 MAX UNIT 160 JMnic Product Specification 2SB755 Silicon PNP Power
JMnic
Original

2SB755

Abstract: 2SD845 isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB755 DESCRIPTION ·Collector-Emitter Breakdown VoltageV(BR)CEO= -150V(Min) ·Good Linearity of hFE ·Complement to Type 2SD845 APPLICATIONS ·Designed for power amplifier applications. .cn mi e ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Emitter Voltage VEBO Emitter-Base , Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB755 ELECTRICAL
INCHANGE Semiconductor
Original

2sb755

Abstract: 2SD845 SavantIC Semiconductor Product Specification 2SB755 Silicon PNP Power Transistors DESCRIPTION ·With MT-200 package ·Complement to type 2SD845 ·High transition frequency ·High breakdown voltage :VCEO=-150V(min) · APPLICATIONS ·For power amplifier applications PINNING(see Fig.2) PIN , =25 SavantIC Semiconductor Product Specification 2SB755 Silicon PNP Power Transistors CHARACTERISTICS , Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 2SB755
-
Original

2SB755

Abstract: 2SD845 Inchange Semiconductor Product Specification 2SB755 Silicon PNP Power Transistors DESCRIPTION With MT-200 package Complement to type 2SD845 High transition frequency High breakdown voltage :VCEO=-150V(min) APPLICATIONS For power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION , Storage temperature -55~150 TC=25 Inchange Semiconductor Product Specification 2SB755 , 2SB755 Silicon PNP Power Transistors PACKAGE OUTLINE OND IC TOR UC SEM GE
-
Original

b 817

Abstract: B817 2SA1034 2SA1455K 2SB 815 , z m 2SA1298 2SB624 2SB779 2SA1365 2SB1197K 2SB 816_ H # 2SB755 2SB966 2SA1788 2 S B 817 - H & 2SB755 2SB966 2SB1362 2SB 818 b ÃL 2SB887 2SB897 2SB 819 fâ t
-
OCR Scan
2SA1703 2SA1705 2SB1044M 2SA1194 2SB1272 2SB1119 b 817 B817 2SB927 2SA1213 2SB802 2SB909M 2SB1214

2sd845

Abstract: 2SB755 Inchange Semiconductor Product Specification 2SD845 Silicon NPN Power Transistors DESCRIPTION With MT-200 package Complement to type 2SB755 High transition frequency High breakdown voltage :VCEO=150V(min) APPLICATIONS For power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (MT-200) and symbol TOR NDU ICO E SEM ANG INCH Absolute maximum ratings (Ta
-
Original
2SB75 BASE15-0

toshiba 2SB755

Abstract: 2SD845 2SD845 SILICON NPN TRIPLE DIFFUSED TYPE power amplifier application, FEATURES: â'¢ High Breakdoun Voltage : VceO=150V (Min.) â'¢ High Transition Frequency : fT=20MHz (Typ.) â'¢ Complementary to 2SB755. â'¢ Recommended for 80r.f High-Fidelity Audio Frequency Amplifier Output Stage. maximum ratings (Ta=25"C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current SYMBOL VÇBO vceo VEBO *E RATING 150 150 12 -12 UNIT Unit in
-
OCR Scan

2sD845

Abstract: 2SB755 SavantIC Semiconductor Product Specification 2SD845 Silicon NPN Power Transistors DESCRIPTION ·With MT-200 package ·Complement to type 2SB755 ·High transition frequency ·High breakdown voltage :VCEO=150V(min) APPLICATIONS ·For power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (MT-200) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS
-
Original

toshiba 2SB755

Abstract: 2SB755 TOSHIBA TOSHIBA {DISCRETE/OPTO} SÍ DE l ^ m V E S O O D O T ñ n f l I" 5bC 0 78 19 D 7t- 3 3 -,3 9097250 TOSHIBA (DISCRETE/OPTO) \ S ILIC O N NPN T R IP L E D IF F U S E D T Y P E Unit in nun POWER A M P L I F I E R A P P L I C A T I O N , FEATURES: · High Breakdoun Voltage : Vc e O= 150V (Min.) · High Transition Frequency : f>r=20MHz (Typ.) · Complementary to 2SB755. · Recommended for 80r . f High-Fidelity Audio Frequency Amplifier Output Stage. 34.3MAX. 5.3MAX. CHARACTERISTIC Collector-Base
-
OCR Scan
2SB755 TOSHIBA

B0708

Abstract: b0744 2SA1094 2SB817 2SB817 2SB5550 2SA1050A-0 2SA12270 2SA1227P 2SA1187 2SB681 2SB681A 2SB755 2SA1227AR 045VH1
Advanced Semiconductor
Original
2SB9030 B0706 2SA1328Y B0708 2N5987 b0744 BOW52 KT818A 2SB922R 2SB903 2SB903R 2SB903S 2N6594 2N5986

transistor 2SB618

Abstract: 3A/fllnm 80 2SB727 80 6 2SB755 140 10 2SB791 230 15 TO-92 120 1 1.5 2SB882
-
Original
transistor 2SB618 3A/fllnm 80 2SA733 2SC1815 2SA970 2SC2240 2SA988 2SC1841

2SB701

Abstract: 2SB773 -7A 2SB754 -50 -5 -7A 2SB755 -150 -5 -12A 2SB757 -40 -5 -15A 2SB758
-
Original
2SB701 2SB712 2SB714 2SD1033 2SD889 2SB773 2SB773A 2SB758A 2SB722 2SB702 2SB702A 2SB703A 2SB705 2SB705A

mg75n2ys40

Abstract: MG15N6ES42 2SB681 2SB863 2SC103 2SC1815 2SB306 2SA1091 2SB755 2SA1302 2SC103A 2SC1815
-
Original
1S1658 mg75n2ys40 MG15N6ES42 2SK150A 2sk270a MG150n2ys40 MG8N6ES42 02BZ2 1S2092 1SZ5759 02CZ2 1S2094 2N3055

C3182N

Abstract: C3888A 2SB530 2SB53I 2SB540 2SB552 2SB554 2SB555 2SB556 2SB557 2SB558 2SB645 2SB678 2SB68I 2SB755 2SB756 2SB833
-
OCR Scan
C3182N C3888A 2sd 3420 2SC2268 3884A EP 1408 2SA51 2SA57 2SB834 2SB596 2SB1375 2SA501

STRS6307

Abstract: STR5412 -220 2SB633 TO-220 2SB755 MT-200 2SB861 TO-220 2SB530 TO-3 2SB634 TO-3 2SB756 MT
-
Original
3DD207 STRS6307 STR5412 2N3055 TO-220 S2000A3 STRS6309 S2000a2 2N3054 2N32741 2N4240 2N4908 2N3054A 2N3766

mg75n2ys40

Abstract: 2N3055 TOSHIBA 2SD845 SILICON NPN TRIPLE DIFFUSED TYPE power amplifier application, FEATURES: â'¢ High Breakdoun Voltage : VceO=150V (Min.) â'¢ High Transition Frequency : fT=20MHz (Typ.) â'¢ Complementary to 2SB755. â'¢ Recommended for 80r.f High-Fidelity Audio Frequency Amplifier Output Stage. maximum ratings (Ta=25"C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current SYMBOL VÇBO vceo VEBO *E RATING 150 150 12 -12 UNIT Unit in
Toshiba
Original
2N3055 TOSHIBA TLR103 TOSHIBA 2N3055 TOSHIBA MG150N2YS40 S2530A MG15G1AL3 050106DAA1 S2540 TIP29B YTF230 S2543 TIP29C
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