2SB0745 2SB0745A 2SB745 2SB745A SJC00050BED

2SB0745, 2SB0745A (2SB745, 2SB745A) Silicon PNP epitaxial planar type For low-frequency and low-noise amplification Unit: mm

Transistors 2SB0745 2SB0745, 2SB0745A 2SB0745A (2SB745 2SB745, 2SB745A 2SB745A) Silicon PNP epitaxial planar type For low-frequency and low-noise amplification Unit: mm 2.5±0.1 2SB0745 2SB0745 2SB0745A 2SB0745A Collector-emitter voltage 2SB0745 2SB0745 (Base open) 2SB0745A 2SB0745A Rating VCBO -35 V -35 VCEO V -55 Storage temperature -5 2 150 (1.0) 4.5±0.1 3.5±0.1 4.1±0.2 2.0±0.2 2.4±0.2 mW °C -55 to +150 1: Base 2: Collector 3: Emitter M-A1 Package mA 400 1 (2.5) mA -200 0.45±0.05 V -50 Tj Junction temperature VEBO Tstg Collector power dissipation 3 (2.5) PC Peak collector current 0.55±0.1 -55 ICP Collector current (0.85) Unit IC Emitter-base voltage (Collector open) R 0.9 R 0.7 1.25±0.05 Symbol Collector-base voltage (Emitter open) (1.5) 1.0±0.1 Absolute Maximum Ratings Ta = 25°C Parameter (1.0) (1.5) ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low tp in o co n an in :// g nt n ce c g pa U in tin t e fo na RL ue ue ype typ ur so a d t d e Pr od ty ni bo yp p c. u e e uc ne t l d tl ife t/s ate cy c/ st en in cl e fo st rm ag at e. io n. · Low noise voltage NV · High forward current transfer ratio hFE · M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. (0.4) M Di ain sc te on na tin nc ue e/ d 6.9±0.1 Features °C Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol 2SB0745 2SB0745 Conditions IC = -10 µA, IE = 0 2SB0745A 2SB0745A co VCEO IC = -2 mA, IB = 0 VEBO IE = -10 µA, IC = 0 /D Emitter-base voltage (Collector open) Typ Collector-emitter cutoff current (Base open) ICEO VCE = -10 V, IB = 0 Forward current transfer ratio * hFE VCE = -5 V, IC = -2 mA VCE(sat) VCB = -5 V, IE = 2 mA, f = 200 MHz fT Noise voltage VCE = -10 V, IC = -1 mA, GV = 80 dB Rg = 100 k, Function = FLAT NV - 0.7 V V µA -1 µA 700 180 -1.0 - 0.1 IC = -100 mA, IB = -10 mA Pl ea M ai nt en an Transition frequency V -5 VCB = -10 V, IE = 0 Collector-emitter saturation voltage Unit V -35 VCE = -1 V, IC = -100 mA ICBO ce VBE Collector-base cutoff current (Emitter open) Base-emitter voltage Max -55 2SB0745A 2SB0745A is Collector-emitter voltage (Base open) 2SB0745 2SB0745 Min -35 -55 nt in Collector-base voltage (Emitter open) VCBO - 0.6 150 V MHz 150 mV Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank Q R S hFE 180 to 360 260 to 520 360 to 700 Note) The part numbers in the parenthesis show conventional part number. Publication date: January 2003 SJC00050BED SJC00050BED 1 2SB0745 2SB0745, 2SB0745A 2SB0745A PC Ta IC VCE IC I B -160 500 -160 Ta = 25°C Collector current IC (mA) 300 200 -120 -300 µA -250 µA -100 -200 µA -80 -150 µA -60 -100 µA -40 Collector current IC (mA) Collector power dissipation PC (mW) IB = -350 µA 400 -120 -80 -40 100 -50 µA -20 20 40 60 0 80 100 120 140 160 -2 0 Ambient temperature Ta (°C) -6 -8 -10 VCE = -5 V Ta = 25°C Collector current IC (mA) Base current IB (µA) -600 -400 -200 VCE = -5 V 25°C Ta = 75°C - 0.2 - 0.4 - 0.6 - 0.8 -25°C -80 -60 -40 0 - 0.4 - 0.8 hFE IC VCE = -5 V Ta = 75°C 300 25°C -25°C 200 100 0 - 0.1 -1 -10 Collector current IC (mA) -100 -1.6 -2.0 -1 Ta = 75°C 25°C -25°C - 0.01 - 0.1 -10 -100 Cob VCB VCB = -5 V Ta = 25°C 300 200 100 1 -1 Collector current IC (mA) 400 0 0.1 - 0.5 -10 fT I E 500 400 -1.2 500 Transition frequency fT (MHz) Forward current transfer ratio hFE 600 - 0.4 IC / IB = 10 Base-emitter voltage VBE (V) Base-emitter voltage VBE (V) - 0.3 -100 - 0.1 0 -1.0 - 0.2 Base current IB (mA) VCE(sat) IC -20 0 - 0.1 0 IC VBE -120 -100 0 0 -12 Collector-emitter voltage VCE (V) IB VBE -800 -4 Collector-emitter saturation voltage VCE(sat) (V) 0 10 Emitter current IE (mA) SJC00050BED SJC00050BED 100 Collector output capacitance C (pF) (Common base, input open circuited) ob 0 2 VCE = -5 V Ta = 25°C -140 20 IE = 0 f = 1 MHz Ta = 25°C 16 12 8 4 0 - 0.1 -1 -10 -100 Collector-base voltage VCB (V) 2SB0745 2SB0745, 2SB0745A 2SB0745A NV VCE NV VCE NV IC 160 160 IC = -1 mA GV = 80 dB Function = RIAA 280 80 22 k Noise voltage NV (mV) Rg = 100 k Rg = 100 k 200 160 120 80 22 k 40 40 120 Rg = 100 k 80 22 k 4.7 k 40 4.7 k 4.7 k -10 0 -1 -100 NV Rg Noise voltage NV (mV) 240 160 Rg = 100 k 22 k 40 0 - 0.01 120 80 IC = -1 mA 40 - 0.5 mA 4.7 k - 0.1 Collector current IC (mA) -1 0 240 200 160 120 80 IC = -2 mA 40 - 0.1 mA 0 1 VCE = -10 V GV = 80 dB Function = RIAA 280 VCE = -10 V GV = 80 dB Function = FLAT 200 -1 NV Rg 160 VCE = -10 V GV = 80 dB Function = RIAA 80 - 0.1 Collector current IC (mA) NV IC 120 0 - 0.01 -100 Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V) 280 -10 Noise voltage NV (mV) 0 -1 Noise voltage NV (mV) VCE = -10 V GV = 80 dB Function = FLAT 240 120 Noise voltage NV (mV) Noise voltage NV (mV) IC = -1 mA GV = 80 dB Function = FLAT 10 100 Signal source resistance Rg (k) SJC00050BED SJC00050BED - 0.5 mA - 0.1 mA 1 10 100 Signal source resistance Rg (k) 3 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. 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