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2SB738 Datasheet

Part Manufacturer Description PDF Type
2SB738 Hitachi Semiconductor Silicon PNP Epitaxial Original
2SB738 Renesas Technology Silicon PNP Epitaxial Transistor Original
2SB738 Renesas Technology Silicon PNP Epitaxial Low frequency power amplifier Original
2SB738 N/A Basic Transistor and Cross Reference Specification Scan
2SB738 N/A Transistor Shortform Datasheet & Cross References Scan
2SB738 N/A Japanese Transistor Cross References (2S) Scan
2SB738 N/A Cross Reference Datasheet Scan
2SB738 N/A The Transistor Manual (Japanese) 1993 Scan
2SB738 N/A Scan
2SB738 N/A Transistor Substitution Data Book 1993 Scan
2SB738 N/A The Japanese Transistor Manual 1981 Scan
2SB738 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
2SB738 N/A Shortform Data and Cross References (Misc Datasheets) Scan
2SB738B Renesas Technology Silicon PNP Epitaxial Transistor Original
2SB738C Renesas Technology Silicon PNP Epitaxial Transistor Original

2SB738

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: 2SB738, 2SB739 Silicon PNP Epitaxial Application · Low frequency power amplifier · Complementary pair with 2SD787 and 2SD788 Outline 2SB738, 2SB739 Absolute Maximum Ratings (Ta = 25 , 2SB738 ­20 ­16 ­6 ­2 0.9 150 ­55 to +150 2SB739 ­20 ­20 ­6 ­2 0.9 150 ­55 to +150 Unit V V V A W °C °C Electrical Characteristics (Ta = 25°C) 2SB738 Item Collector to base breakdown voltage Collector to emitter , , IE = 0, f = 1 MHz Collector output capacitance Cob Note: B 100 to 200 1. The 2SB738 and 2SB739 Hitachi
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Hitachi DSA002754
Abstract: 2SB738, 2SB739 Silicon PNP Epitaxial Application · Low frequency power amplifier · , 2SB738, 2SB739 Absolute Maximum Ratings (Ta = 25°C) Item Symbol 2SB738 2SB739 Unit , °C) 2SB738 2SB739 Item Symbol Min Typ Max Min Typ Max Unit Test conditions Collector , output capacitance Cob Note: 1. The 2SB738 and 2SB739 are grouped by h FE as follows. B C 100 to 200 160 to 320 2 100 VCB = ­10 V, IE = 0, f = 1 MHz 2SB738, 2SB739 Maximum Hitachi Semiconductor
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D-85622
Abstract: products contained therein. 2SB738, 2SB739 Silicon PNP Epitaxial ADE-208-1030 (Z) 1st. Edition , Outline TO-92MOD 1. Emitter 2. Collector 3. Base 3 2 1 2SB738, 2SB739 Absolute Maximum Ratings (Ta = 25°C) Item Symbol 2SB738 2SB739 Unit Collector to base voltage VCBO , ­55 to +150 ­55 to +150 °C Electrical Characteristics (Ta = 25°C) 2SB738 2SB739 Item , 2SB738 and 2SB739 are grouped by h FE as follows. B C 100 to 200 160 to 320 2 100 Hitachi Semiconductor
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2SD78
Abstract: 2SB738,2SB739 Silicon PNP Epitaxial HITACHI Application · L o w frequency power a m p lifie r , 3 ; 2 1 : 2SB738, 2SB739 Absolute Maximum Ratings (Ta = 25°C) Item Collector to , dissipation Junction tem perature Storage temperature! Symbol VcBO VcEO V ebo lc Pc Tj Tstg 2SB738 -2 , W °C °C Electrical Characteristics (Ta = 25°C) 2SB738 Item Collector to base breakdown voltage , - - 150 50 Collector output capacitance Cob Note: 1. The 2SB738 and 2SB739 are grouped by -
OCR Scan
Abstract: 2SB738, 2SB739 Silicon PNP Epitaxial ADE-208-1030 (Z) 1st. Edition Mar. 2001 Application · , . Emitter 2. Collector 3. Base 3 2 1 2SB738, 2SB739 Absolute Maximum Ratings (Ta = 25°C) Item Symbol 2SB738 2SB739 Unit Collector to base voltage VCBO ­20 ­20 V Collector , Electrical Characteristics (Ta = 25°C) 2SB738 2SB739 Item Symbol Min Typ Max Min Typ , - - 50 - pF Collector output capacitance Cob Note: 1. The 2SB738 and 2SB739 are Hitachi Semiconductor
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Hitachi DSA0076
Abstract: HITACHI 2SB738, 2SB739 SILICON PNP EPITAXIAL LOW FREQUENCY POWER AMPLIFIER Complementary pair with 2SD787 and 2SD788 ~n- T~m 1 Em itte r 2 C o H e c io f B ase (fîimçrvsiDris in m m ) (JEDEC TO-92 MOD.) ABSOLUTE MAXIMUM RATINGS (Ta=25°C) llcm Collccior to base voilage Symbol; · V , CHARACTERISTICS iT.r 2vr> Item Collector to base breakdown voltage Symbol Test Condition 2SB738 min. -20 -16 -6 , 35 f o H n x ; [_ IDO w 2 0 0 ! 1 60 w ? 2 t ) HITACHI 2SB738, 2SB739 TYPICAL OUTPUT -
OCR Scan
SB738
Abstract: HITACHI 2SB738, 2SB739 SILICON PNP EPITAXIAL LOW FREQUENCY POWER AMPLIFIER Complementary pair with 2SD787 and 2SD788 30 5Jt « I 5 3 2 2 (JEDEC TO-92 MOD.) 1. limitier 2. Collector 3. Base (Dimensions in mm) I ABSOLUTE MAXIMUM RATINGS (Ta=25°C) I rein Symbol 2SB738 2SB739 Unit Collector to base voltage Veno -20 -20 V Collector to emitter voltage Vceo -16 -20 V Emitter 10 base voltage Vebo -6 V Collector current Ic -2 -1 A Collector power dissipation PC 0.9 0.9 W Junction temperature Tj 150 150 "C -
OCR Scan
2SB73 2SB73R 2SR738
Abstract: -0.005 2SB738 BjZ LF PA -20 -16 -2 0. 9 -2 -16 100 320 -2 -0.1 -0. 3 -1 -0. 1 2SB739 B jZ LF PA -20 , -92MOD) ECB 2SB738 150* -2 -0.01 50* 2SD788 (TO-92MOD) ECB 2SB739 150* -2 -0.01 35* 2SD789 (TO -
OCR Scan
2SB694H 2SB698 2SB703 2SB703A 2SB708 2SB709 2SB737 2SB718 2SB747 2SB694 2SB707
Abstract: © T 2SA1784 2SB 1210 â" â¡ â'"A 2SB893 2SA1300 2SB1068 2SB738 2SB976 2SA1282 2S8 1211 -
OCR Scan
2SA1606 2SA1306 2SB940A 2SB1015 2SB941 2SB1114 sa1306 2SB793 2SB1186B 2sb1370 2SB1212 SA1306 SA1606
Abstract: 100 to 200 C 160 to 320 See characteristic curves of 2SB738. 250 HITACHI 2SB1058 O -
OCR Scan
VC90 2SD1489 2SB1Q58
Abstract: Vcb=-I0V, Ie = 0. f-lMHz â'" 50 - pF â  See characteristic curves of 2SB738. -
OCR Scan
Abstract: 2SB646 2SA1124 2SA1482 2SA 1146 . s 2 2SB817 2SA1265N 2SA1232 2SB738 2SA 1150 - 2SB808 2SB810 -
OCR Scan
2SA914 2SA1783 2SA101S 2SA933LN 2SA562TM 2SA970 2SB927 2sa977 2SA1208 2SA1320 2SA1360
Abstract: 2SBU86A 2SA 1281 = » 2SA1208 2SA1145 2SA1124 2SA1285A 2SA1482 2SA 1 282 = « 2SB927 2SA966 2SB738 -
OCR Scan
2SA1255 2SA1227 2SA999 2SA1115 2SA1016 2SB873 2SA1281 2SA1266 2SA817A 2SA1048 2SB774 2SA933S 2SA1162 2SA1257 2SA1330
Abstract: pF I See characteristic curves ol 2SB738. -
OCR Scan
Abstract: 2SD787, 2SD788 Silicon NPN Epitaxial Application · Low frequency power amplifier · Complementary pair with 2SB738 and 2SB739 Outline 2SD787, 2SD788 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg 2SD787 20 16 6 2 0.9 150 ­55 to +150 2SD788 20 20 6 2 0.9 150 ­50 to +150 Unit V V V A W °C °C Hitachi
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EBO1 Hitachi DSA002756
Abstract: C 100 to 200 160 to 320 See characteristic curves of 2SB738. 2 VCE = ­2 V, IC = ­0.1 Hitachi
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Hitachi DSA00493
Abstract: . 207 2SB738 -
OCR Scan
3SK298 Transistor 2SA 2SB 2SC 2SD 993 395 pnp npn transistor 2SA 101 TRANSISTOR 2SC 635 transistor 2Sb 474 transistor 2SC458 2SA673 2SA778 2SA836 2SA844 2SA872 2SA872A
Abstract: > '1 » 787 El ir. PA Si. E 20 6 2 A 900 150 2 16 100-800 2 100 2 -10 80 * 20 251 2SB738 f 3 > -r -
OCR Scan
2SB743 2SB744 TP5006 2SD777 2SB741 2SB740 C-25T
Abstract: 80* 20 2SB738 2 100 80* 20 2SB739 2 100 80* 20 2SB740 2 100 80* 20 -
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2SD701 2SD704 2SD712 2SD717 2SD714 2SD795A 2SD737 2SD744 2sb737 equivalent 2SD736A 2SD702 2SD703 2SD705 2SD706
Abstract: ~~~~~ ~~~~~~M 65 70 KTS3103A KTS3103B PB6015A PB6013A 2SA1362Y 2SA1362GR PB6015B PB6013B 2SB1058 2SB738 General Transistor
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2N2372 KT501A KT501B KT209B 2N4007 diode Transistor NEC 12d 2U diode 2u 85 HA7806 HA7808 MPSH69 2N2005 2N2334 2N2335
Abstract: 2SD787, 2SD788 Silicon NPN Epitaxial Application · Low frequency power amplifier · Complementary pair with 2SB738 and 2SB739 Outline 2SD787, 2SD788 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg 2SD787 20 16 6 2 0.9 150 ­55 to +150 2SD788 20 20 6 2 0.9 150 ­50 to +150 Unit V V V A W °C °C -
OCR Scan
2SB1010 2SA684 2SB1035 2SA817 2SB1043 2SA715 761b nec 761a 2sb1041 2sa684 nec 2SA1705 2SB1041 2SA133S
Abstract: pF I See characteristic curves ol 2SB738. -
OCR Scan
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