-120V 2SD768 2SB727 -100V - Datasheet Archive

 

INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION ·High DC Current Gain: hFE = 1000(Min)@ IC=

 

isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION ·High DC Current Gain: hFE = 1000(Min)@ IC= -3A ·Collector-Emitter Breakdown Voltage: V(BR)CEO = -120V -120V(Min) ·Low Collector-Emitter Saturation Voltage: VCE(sat) = -1.5V(Max)@ IC= -3A ·Complement to Type 2SD768 2SD768 .cn mi e APPLICATIONS ·Medium speed and power switching applications. scs .i w ABSOLUTE MAXIMUM RATINGS (Ta=25) SYMBOL w w PARAMETER VALUE UNIT -120 V -120 V VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -6 A ICM Collector Current-Peak -10 A PC Collector Power Dissipation TC=25 40 W Tj Junction Temperature 150 -55~150 Tstg Storage Temperature Range isc Websitewww.iscsemi.cn 2SB727 2SB727 isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor 2SB727 2SB727 ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= -25mA, RBE= V(BR)EBO Emitter-Base Breakdown Voltage IE= -50mA, IC= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -3A, IB= -6mA -1.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -6A, IB= -60mA -3.0 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= -3A, IB= -6mA -2.0 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= -6A, IB= -60mA -3.5 V VCB= -120V -120V, IE= 0 -100 A VCE= -100V -100V; RBE= -10 A ICBO Collector Cutoff Current hFE DC Current Gain Switching times ton TYP. -7 V .cn mi e scs .i IC= -3A; VCE= -3V UNIT V B B MAX -120 B ww w MIN B Collector Cutoff Current ICEO CONDITIONS 1000 20000 1.0 Turn-On Time s 3.0 s IC= -3A; IB1= -IB2= -6mA toff Turn-Off Time isc Websitewww.iscsemi.cn