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Part : 2SB727K-E Supplier : Renesas Electronics Manufacturer : Rochester Electronics Stock : 28 Best Price : $1.85 Price Each : $2.28
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2SB727 Datasheet

Part Manufacturer Description PDF Type
2SB727 Hitachi Semiconductor Silicon PNP Epitaxial Original
2SB727 Renesas Technology Silicon PNP Epitaxial Original
2SB727 Renesas Technology Silicon PNP Epitaxial Original
2SB727 Motorola Motorola Semiconductor Data & Cross Reference Book Scan
2SB727 N/A Semiconductor Master Cross Reference Guide Scan
2SB727 N/A Scan
2SB727 N/A The Japanese Transistor Manual 1981 Scan
2SB727 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
2SB727 N/A Shortform Data and Cross References (Misc Datasheets) Scan
2SB727 N/A Transistor Shortform Datasheet & Cross References Scan
2SB727 N/A Transistor Replacements Scan
2SB727 N/A Cross Reference Datasheet Scan
2SB727(K) Hitachi Semiconductor Silicon PNP Darlington Transistor Original
2SB727K Hitachi Semiconductor Silicon PNP Epitaxial Original
2SB727(K) Renesas Technology Silicon PNP Epitaxial Original
2SB727K Renesas Technology Silicon PNP Epitaxial Original
2SB727K Renesas Technology Silicon PNP Epitaxial Original
2SB727K Renesas Technology Silicon PNP Epitaxial Original
2SB727(K) N/A Transistor Substitution Data Book 1993 Scan
2SB727K N/A The Transistor Manual (Japanese) 1993 Scan
Showing first 20 results.

2SB727

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: 2SB727(K) Silicon PNP Epitaxial HITACHI Application Medium speed and power switching complementary pair with 2SD768(K) Outline TO-220AB l ì 2 I 1 2 1 Base 2. Collector (Flange) 3 , V V V A A W °C to +150 P Tj 1 C *' Tstg °C 2SB727(K) Electrical , to , , 2 HITACHI 2SB727(K) D C C u rre n t T ra n s fe r R a tio vs. T y p ic a l O u tp u , rre n t lc (m A ) 3 HITACHI 2SB727(K) 4 HITACHI 2SB727(K) Notice When using -
OCR Scan
D-85622

Hitachi DSA002787

Abstract: 2SB727(K) Silicon PNP Epitaxial Application Medium speed and power switching complementary , °C °C 2SB727(K) Electrical Characteristics (Ta = 25°C) Item Symbol Min ­120 ­7 - - 1000 - - , Voltage VCE (V) 2 2SB727(K) DC Current Transfer Ratio vs. Collector Current 10,000 TC = 25 , ­3 Collector current IC (mA) ­10 3 2SB727(K) Transient Thermal Resistance 10 Thermal , °C 1-1,000 ms 4 2SB727(K) When using this document, keep the following in mind: 1. This
Hitachi
Original
Hitachi DSA002787

2SB727

Abstract: Hitachi DSA001650 2SB727(K) Silicon PNP Epitaxial Application Medium speed and power switching complementary , = 25°C 2SB727(K) Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max , = ­3 A* ­3 ­10 ­30 ­100 ­300 ­1,000 Collector to emitter Voltage VCE (V) 2SB727(K) DC , 2SB727(K) Transient Thermal Resistance Thermal resistance j-c (°C/W) 10 1-1,000 s 3 1-1,000 ms , ) Time t 4 2SB727(K) Notice When using this document, keep the following in mind: 1. This
Hitachi
Original
Hitachi DSA001650

2SB727

Abstract: 2SD768 2SB727(K) Silicon PNP Epitaxial ADE-208-857 (Z) 1st. Edition Sep. 2000 Application Medium , ­55 to +150 °C Note: 1. Value at TC = 25°C 2SB727(K) Electrical Characteristics (Ta = 25 , Voltage VCE (V) 2SB727(K) DC Current Transfer Ratio vs. Collector Current Typical Output , °C ­0.3 ­1.0 ­3 Collector current IC (mA) ­10 3 2SB727(K) Transient Thermal Resistance , 1 10 1 100 10 100 Time t 4 1,000 (s) 1,000 (ms) 2SB727(K) Package
Hitachi Semiconductor
Original
DSA003644
Abstract: H ITACH I 2SB727 K SILICON PNP EPITAXIAL MEDIUM SPEED AND POW ER SW ITCHING CO M PLEM ENTARY PAIR W ITH 2S D 7 6 8 K ; I . IJáNC 2 C'o H ecu x r « F j- i ü g c í 3 - E íM tK Í {iíío s e n s K H H in m m > (JEDEC TO-220AB) I ABSOLUTE M AXIM UM RATINGS i,Ta=250C) lltrtn Collector to base voltage Collector to emitter voilage Emitter to base voltage Collector current Collector peak cutrcm , 2SB727® AREA OF SAFE OPERATION TYPICAL OUTPUT CHARACTERISTICS r : ? V - ¡ V ' ? H > v -
OCR Scan
2SUT27
Abstract: HITACHI 2SB727(K) 4 HITACHI 2SB727ÇK) Notice When using this document, keep the , 2SB727(K) Silicon PNP Epitaxial HITACHI Application Medium speed and power switching complementary pair with 2SD768(K) Outline TQ -220AB Absolute Maximum Ratings (Ta = 25°C) Item C ollector to base voltage C ollector to em itter voltage Emitter to base voltage C ollector current C , HITACHI 2SB727(K) Typical O uipu i Characteristics -5 DC Current Transfer Ratio vs Collector Current -
OCR Scan

toshiba 2SB755

Abstract: 2SAB12 SA1365 2SA1036K 2SB 710A K T 2SA1036K 2SB 711 â'¢â'¢ â y-virv 2SB885 2SB674 2SB727 (K) 2SB950A 2SB1339 2SB 712 . vy>jy 2SB885 2SB673 2SB727(K) 2SB950A 2SB1339 2SB 713 - ta T 2SB681
-
OCR Scan
2SA952 2SB817 2SB755 2SA1232 2SB756 2SA1181 toshiba 2SB755 2SAB12 2SB681 TOSHIBA 2SB700b 2SA818 2SA950 2SB561 2SA719 2SA1398 2SA1515

Hitachi DSA003780

Abstract: 2SB727 2SB727(K) Silicon PNP Epitaxial Application Medium speed and power switching complementary pair with 2SD768(K) Outline TO-220AB 2 1 1 2 3 1. Base 2. Collector (Flange) 3 , . Value at TC = 25°C 2SB727(K) Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ , V, IC = ­3 A*1 ­3 ­10 ­30 ­100 ­300 ­1,000 Collector to emitter Voltage VCE (V) 2SB727(K , current IC (mA) ­10 3 2SB727(K) Transient Thermal Resistance Thermal resistance j-c (°C/W
Hitachi Semiconductor
Original
Hitachi DSA003780 DSA003780

2SB727

Abstract: 2SD768 150 -55~150 Tstg Storage Temperature Range isc Websitewww.iscsemi.cn 2SB727 , 2SB727 ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER V(BR)CEO
INCHANGE Semiconductor
Original

2SB727

Abstract: 2SD768 products contained therein. 2SB727(K) Silicon PNP Epitaxial ADE-208-857 (Z) 1st. Edition , °C Storage temperature Tstg ­55 to +150 °C Note: 1. Value at TC = 25°C 2SB727(K , ­300 ­1,000 Collector to emitter Voltage VCE (V) 2SB727(K) DC Current Transfer Ratio vs , ­500 IB2 Ta = 25°C ­0.3 ­1.0 ­3 Collector current IC (mA) ­10 3 2SB727(K) Transient , °C 0.1 0.03 0.01 1 10 1 100 10 100 Time t 4 1,000 (s) 1,000 (ms) 2SB727(K
Renesas Technology
Original

2SB727

Abstract: 2SD768 products contained therein. 2SB727(K) Silicon PNP Epitaxial ADE-208-857 (Z) 1st. Edition , °C Storage temperature Tstg ­55 to +150 °C Note: 1. Value at TC = 25°C 2SB727(K , ­300 ­1,000 Collector to emitter Voltage VCE (V) 2SB727(K) DC Current Transfer Ratio vs , ­500 IB2 Ta = 25°C ­0.3 ­1.0 ­3 Collector current IC (mA) ­10 3 2SB727(K) Transient , °C 0.1 0.03 0.01 1 10 1 100 10 100 Time t 4 1,000 (s) 1,000 (ms) 2SB727(K
Renesas Electronics
Original

Nec K 872

Abstract: 2SA1184 2SA1195 2SB1086 2SB 879 b iL 2SA1507 2SA1195 2SB1086A 2SB 880 = m 2SB676 2SB601 2SB727 00
-
OCR Scan
2SB824 2SB596 2SB703 2SB1334 2SB920 2SB595 Nec K 872 2SA1184 2SB1480 2SA1015 2SB1306 2SB1479 2SB942

2SA818

Abstract: 2SB681 TOSHIBA ^ fé T 2sb880 2sb674 2sb727 00 2sb950 2sb1341 2sb 673 S S 2sb886 2sb975 2SB791(k) 2sb1343
-
OCR Scan
2SB849 2SC4341 2sb669 2SA1284 2SA1142 2SB686

2SB1099

Abstract: 2SB615 . 2SB885 2SB673 2SB727(K) 2SB950 2SB1339 2SB 1088 b a 2SB887 2SB955 00 2S8 1089 b a 2SB824
-
OCR Scan
2SB886 2SA968 2SB861 2SB882 2SB1370 2SB1099 2SB615 nec 2SB1099 B676 2SA914 2SA1706 2SB880 2SB1341 2SB1108 2SB1343

2SD768

Abstract: DARLINGTON 3A 100V npn Inchange Semiconductor Product Specification 2SD768 Silicon NPN Power Transistors · DESCRIPTION ·With TO-220C package ·Complement to type 2SB727 ·DARLINGTON APPLICATIONS ·For medium speed and power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 120 V VCEO
-
Original
DARLINGTON 3A 100V npn 2SD76

2SB557 TOSHIBA

Abstract: 2SB1314 m 2SB554 2SB 601 B m 2SB884 2SB727(K) 2SB1063 2SB1339 2SB 604 & T 2SB507 2SB596 2SA1069
-
OCR Scan
2SA1634 2SA496 2SA683 2SA934 2SB857 2SB1186A 2SB557 TOSHIBA 2SB1314 toshiba 2sb554 2sa483 2SB546A 2SB54 2SB544 2SB562 2SB1035

2SA1281

Abstract: 2SB927 - 26 - m % Type No. tt S Manuf. 3. 3 SANYO ï 2 TOSHIBA b s NEC a îl HITACHI « ± a FUJITSU fâ T MATSUSHITA = m MITSUBISHI â¡ - A ROHM 2SA 1253- 2SA1048 â 7CA1 1 7C 2SB774 2SA933S 2SA 1254 . « T 2SA1Ì77 2SA1162 2SA 1255 , 2SA1257 2SA1330 2SB792 2SA 1256 , 2SA1226 2SA1022 2SA1733K 2SA 1257 2SA1255 2SA1330 2SB792 2SA 1258 â'ž 2SB677 2SB765 2SB950 2SB1341 2SA 1259 . 2SR676 2SB727 ¿SB75à 2SB1339 2SA 1260 â'" Â¥ 2SB675 2SB872
-
OCR Scan
2SA1227 2SA999 2SA1115 2SA1016 2SB927 2SA966 2SA1281 2SB873 2SA1266 2SA817A 2SB92Z 2SA1012 2SB775 2SA1263N 2SB979 2SB1345

2sa970

Abstract: 2SA564A - 17 - s â'¬ Type No. tt « Manuf. h $ SANYO Ã" 2 TOSHIBA B S NEC B ÃL HITACHI « ± a FUJITSU fâ t MATSUSHITA h * MITSUBISHI â¡ â'" a ROHM 2SA 892 ' â'¢y-virv 2SB675 2SB727(K) 2SB1339 2SA 893 - ED w 2SA1207 2SA970 2SA988 2 SA1127 2SA904A 2 SA10 3 8 2SA 893A ED 2SA970 2SA1038 2SA 894 SÃBÃS 2SB598 2SB564 2SB562 2SA683 2SA934 2SA 895 St0$S 2SA1005 2SA838 2SA 896 y - 2SB1208 2SA949 2SB648A 2SA1124 2SA 89/ Vâ'"â'" 2SA715 2SA699A 2SB1064 2SA 898 "'
-
OCR Scan
2SA991 2SA1032 2SA990 2SA564A 2SA953 2SA854 2SA906 2SA872 2SA1110 2SA1285 2SA1482 2SA1209 2SB559 2SA1356

2SB727

Abstract: 2SB727K HITACHI 2SB727K SILICON PNP EPITAXIAL MEDIUM SPEED AND POWER SWITCHING COMPLEMENTARY PAIR WITH 2SD768;g) {JEDEC TO-22QAB) I ABSOLUTE MAXIMUM RATINGS (Tu=25°C) 1. Ba$C 2. Collector (Giunge) 3. Emiiicr (Dimensions in mm) Item Symbol 2S8727® Unit Collector (o base voltage VCBÛ -120 V Collector to emitter voltage VCEO -120 V Emitter to base voliage Vt-llO -7 V Collector current Ic -6 A , '" 3.0 â'" Pulse Tesi 2SB727(g) AREA OF SAFE OPERATION g -i.o TYPICAL OUTPUT CHARACTERISTICS -5
-
OCR Scan

2SD768

Abstract: 2SB727 SavantIC Semiconductor Product Specification 2SD768 Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·Complement to type 2SB727 ·DARLINGTON APPLICATIONS ·For medium speed and power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 120 V VCEO
-
Original

2SD768

Abstract: Hitachi DSA00279 2SD768(K) Silicon NPN Epitaxial Application Medium speed and power switching complementary pair with 2SB727(K) Outline Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC I C(peak) PC * Tj Tstg 1 Ratings 120 120 7 6 10 40 150 ­55 to +150 Unit V V V A A W °C
Hitachi
Original
Hitachi DSA00279
Showing first 20 results.