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2SB649 Datasheet

Part Manufacturer Description PDF Type
2SB649 Hitachi Semiconductor Silicon PNP Transistor Original
2SB649 Renesas Technology Silicon PNP Epitaxial Original
2SB649 Transys Electronics To-126c Plastic-encapsulated Transistors Original
2SB649 Unisonic Technologies BIPOLAR POWER GENERAL PURPOSE TRANSISTOR Original
2SB649 Weitron PNP Epitaxial Planar Transistors Original
2SB649 Motorola Motorola Semiconductor Data & Cross Reference Book Scan
2SB649 N/A Transistor Shortform Datasheet & Cross References Scan
2SB649 N/A Basic Transistor and Cross Reference Specification Scan
2SB649 N/A Shortform Transistor PDF Datasheet Scan
2SB649 N/A Transistor Replacements Scan
2SB649 N/A Japanese Transistor Cross References (2S) Scan
2SB649 N/A Cross Reference Datasheet Scan
2SB649 N/A Semiconductor Master Cross Reference Guide Scan
2SB649 N/A The Transistor Manual (Japanese) 1993 Scan
2SB649 N/A Transistor Substitution Data Book 1993 Scan
2SB649 N/A The Japanese Transistor Manual 1981 Scan
2SB649 N/A Shortform Transistor Datasheet Guide Scan
2SB649 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
2SB649 N/A Shortform Data and Cross References (Misc Datasheets) Scan
2SB649A Hitachi Semiconductor Silicon PNP Transistor Original
Showing first 20 results.

2SB649

Catalog Datasheet MFG & Type PDF Document Tags

2SB649

Abstract: 669a SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB649 2SB649A , 2SB649 VCBO Collector-base voltage -120 Open base 2SB649A VEBO Emitter-base voltage IC V -180 2SB649 Collector-emitter voltage UNIT -180 Open emitter 2SB649A VCEO , Specification Silicon PNP Power Transistors 2SB649 2SB649A CHARACTERISTICS Tj=25 unless otherwise , Collector-emitter breakdown voltage MIN TYP. MAX -120 IC=-10mA; RBE=B V -160 2SB649A 2SB649
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Original
669a 2SD669/669A

2SB649AG

Abstract: 2sb669 2SB649-x-T6C-K 2SB649-x-T60-K 2SB649-x-T92-B 2SB649-x-T92-K 2SB649-x-T9N-B 2SB649-x-T9N-K 2SB649-x-TN3-R 2SB649A-x-AB3-R 2SB649A-x-T6C-K 2SB649A-x-T60-K 2SB649A-x-T92-B 2SB649A-x-T92-K 2SB649A-x-T9N-B , 2SB649G-x-T92-B 2SB649G-x-T92-K 2SB649G-x-T9N-B 2SB649G-x-T9N-K 2SB649G-x-TN3-R 2SB649AG-x-AB3-R , 2SB649L-x-T60-K 2SB649L-x-T92-B 2SB649L-x-T92-K 2SB649L-x-T9N-B 2SB649L-x-T9N-K 2SB649L-x-TN3-R 2SB649AL-x-AB3-R 2SB649AL-x-T6C-K 2SB649AL-x-T60-K 2SB649AL-x-T92-B 2SB649AL-x-T92-K 2SB649AL-x-T9N-B
Unisonic Technologies
Original
2SB649AG 2sb669 2SB649/A 2SB669/A 2SB649L/2SB649AL 2SB649G/2SB649AG 2SB649-
Abstract: 2SB649xG-x-AA3-R 2SB649xG-x-AB3-R 2SB649xL-x-TN3-R 2SB649xG-x-TN3-R 2SB649xL-x-T60-K 2SB649xG-x-T60-K 2SB649xL-x-T6C-K 2SB649xG-x-T6C-K 2SB649xL-x-T6S-K 2SB649xG-x-T6S-K 2SB649xL-x-T92-B 2SB649xG-x-T92-B 2SB649xL-x-T92-K 2SB649xG-x-T92-K 2SB649xL-x-T9N-B 2SB649xG-x-T9N-B 2SB649xL-x-T9N-K 2SB649xG-x-T9N-K , MARKING MARKING PACKAGE 2SB649 2SB649A SOT-223 SOT-89 TO-252 TO-92 TO-92NL L: Lead Free G: Halogen Free UTC 2SB649 Data Code L: Lead Free G: Halogen Free UTC 2SB649A Unisonic Technologies
Original
2SD669/A QW-R204-006

2SB649A

Abstract: 2SB649 2SB649, 2SB649A Silicon PNP Epitaxial Application Low frequency power amplifier complementary , 2SB649, 2SB649A Absolute Maximum Ratings (Ta = 25°C) Ratings Item Symbol 2SB649 2SB649A , = 25°C 2SB649, 2SB649A Electrical Characteristics (Ta = 25°C) 2SB649 Item Symbol Min , voltage 1 Cob Typ 2SB649A Typ Notes: 1. The 2SB649 and 2SB649A are grouped by h FE1 as follows. 2. Pulse test B C D 2SB649 60 to 120 100 to 200 160 to 320 2SB649A 60
Hitachi Semiconductor
Original
Hitachi DSA0088 D-85622

2SB669A

Abstract: 2sb669 SYMBOL RATING UNIT Collector-base voltage Collector-emitter voltage 2SB649 2SB649A , 2SB649 2SB649A Emitter to base breakdown voltage Collector cut-off current V (BR)CBO V (BR)CEO , µA 1 QW-R204-006,A UTC 2SB649 /A PARAMETER 2SB649 DC current gain 2SB649A , UTC 2SB649 /A PNP EPITAXIAL SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR , TYPICAL PARAMETERS PERFORMANCE UTC UNISONIC TECHNOLOGIES CO. LTD 2 QW-R204-006,A UTC 2SB649
Unisonic Technologies
Original
2SB669A
Abstract: 2SB649/2SB649A TRANSISTOR (PNP) TO- 126C FEATURES Low frequency power amplifier complementary , Value -180 V 2SB649 -120 V 2SB649A 2. COLLECTOR Units -160 VCBO , gain hFE(2) VCE(sat) Collector-emitter saturation voltage IC=-10mA,IB=0 2SB649 2SB649A VCE=-5V,IC=-150mA 2SB649 2SB649A VCE=-5V,IC=-500mA 60 60 320 200 30 IC=-500mA,IB , OF Range 2SB649 2SB649A V 140 MHz 27 pF hFE(1) B Rank VCB=-10V,IE=0,f Jiangsu Changjiang Electronics Technology
Original
2SB649/2SB649A

2Sb649

Abstract: 2SB649 hitachi 2SB649, 2SB649A Silicon PNP Epitaxial Application Low frequency power amplifier complementary , 2SB649, 2SB649A Absolute Maximum Ratings (Ta = 25°C) Ratings Item Symbol 2SB649 2SB649A , = 25°C 2SB649, 2SB649A Electrical Characteristics (Ta = 25°C) 2SB649 Item Symbol Min , voltage 1 Cob Typ 2SB649A Typ Notes: 1. The 2SB649 and 2SB649A are grouped by h FE1 as follows. 2. Pulse test B C D 2SB649 60 to 120 100 to 200 160 to 320 2SB649A 60
Hitachi
Original
2SB649 hitachi Hitachi DSA001650

2SB669

Abstract: 2SB649AL : 2SB649L/2SB649AL ORDERING INFORMATION Order Number Normal Lead Free Plating 2SB649-x-AB3-R 2SB649L-x-AB3-R 2SB649-x-T6C-K 2SB649L-x-T6C-K 2SB649-x-T60-K 2SB649L-x-T60-K 2SB649-x-T92-B 2SB649L-x-T92-B 2SB649-x-T92-K 2SB649L-x-T92-K 2SB649A-x-AB3-R 2SB649AL-x-AB3-R 2SB649A-x-T6C-K 2SB649AL-x-T6C-K 2SB649A-x-T60-K 2SB649AL-x-T60-K 2SB649A-x-T92-B 2SB649AL-x-T92-B 2SB649A-x-T92-K 2SB649AL-x-T92-K 2SB649L-x-AB3-R , =25, unless otherwise specified) PARAMETER SYMBOL VCBO Collector-Base Voltage 2SB649 2SB649A
Unisonic Technologies
Original
126-C 2SB649L- 2SB649A- 2SB649AL-

2SB649AL

Abstract: 2SB669 /2SB649AL ORDERING INFORMATION Order Number Normal Lead Free Plating 2SB649-x-AB3-R 2SB649L-x-AB3-R 2SB649-x-T6C-K 2SB649L-x-T6C-K 2SB649-x-T60-K 2SB649L-x-T60-K 2SB649-x-T92-B 2SB649L-x-T92-B 2SB649-x-T92-K 2SB649L-x-T92-K 2SB649-x-TN3-R 2SB649L-x-TN3-R 2SB649-x-TN3-T 2SB649L-x-TN3-T 2SB649A-x-AB3-R 2SB649AL-x-AB3-R 2SB649A-x-T6C-K 2SB649AL-x-T6C-K 2SB649A-x-T60-K 2SB649AL-x-T60-K 2SB649A-x-T92-B 2SB649AL-x-T92-B 2SB649A-x-T92-K 2SB649AL-x-T92-K 2SB649A-x-TN3-R 2SB649AL-x-TN3-R 2SB649A-x-TN3-T 2SB649AL-x-TN3-T Package SOT-89 TO
Unisonic Technologies
Original
Abstract: ORDERING INFORMATION Order Number Normal Lead Free Plating 2SB649-x-AB3-R 2SB649L-x-AB3-R 2SB649-x-T60-K 2SB649L-x-T60-K 2SB649-x-T92-B 2SB649L-x-T92-B 2SB649-x-T92-K 2SB649L-x-T92-K 2SB649A-x-AB3-R 2SB649AL-x-AB3-R 2SB649A-x-T60-K 2SB649AL-x-T60-K 2SB649A-x-T92-B 2SB649AL-x-T92-B 2SB649A-x-T92-K 2SB649AL-x-T92-K Package SOT-89 TO-126 TO-92 TO-92 SOT-89 TO-126 TO-92 TO-92 Pin Assignment , Reel Bulk Tape Box Bulk Tape Reel Bulk Tape Box Bulk 2SB649L-x-AB3-R (1)Packing Type (1 Unisonic Technologies
Original

IC free

Abstract: 2SB649x-x-AB3-R 2SB649x-x-T6C-K 2SB649x-x-T60-K 2SB649x-x-T92-B 2SB649x-x-T92-K 2SB649x-x-T92-R 2SB649x-x-T9N-B 2SB649x-x-T9N-K 2SB649x-x-TN3-R Ordering Number Lead Free 2SB649xL-x-AB3-R 2SB649xL-x-T6C-K 2SB649xL-x-T60-K 2SB649xL-x-T92-B 2SB649xL-x-T92-K 2SB649xL-x-T92-R 2SB649xL-x-T9N-B 2SB649xL-x-T9N-K 2SB649xL-x-TN3-R Halogen Free 2SB649xG-x-AB3-R 2SB649xG-x-T6C-K 2SB649xG-x-T60-K 2SB649xG-x-T92-B 2SB649xG-x-T92-K 2SB649xG-x-T92-R 2SB649xG-x-T9N-B 2SB649xG-x-T9N-K 2SB649xG-x-TN3-R Package SOT-89 TO-126C TO-126 TO-92 TO-92 TO-92 TO
Unisonic Technologies
Original
IC free
Abstract: 2SB649/2SB649A TRANSISTOR (PNP) TO- 126 FEATURES Low Frequency Power Amplifier Complementary , Parameter Value -180 V 2SB649 -120 V 2SB649A 2. COLLECTOR Unit -160 VCBO , gain hFE(2) VCE(sat) Collector-emitter saturation voltage IC=-10mA,IB=0 2SB649 2SB649A VCE=-5V,IC=-150mA 2SB649 2SB649A VCE=-5V,IC=-500mA 60 60 320 200 30 IC=-500mA,IB , OF Range 2SB649 2SB649A V 140 MHz 27 pF hFE(1) B Rank VCB=-10V,IE=0,f Jiangsu Changjiang Electronics Technology
Original

2SB649A

Abstract: 2SB649 equivalent 2SB649/2SB649A PNP Type Elektronische Bauelemente Plastic Encapsulate Transistors RoHS , VCEO 2SB649 : -120 V 2SB649A : -160 V Operating and storage junction temperature range TJTstg: -55 , UNIT -180 -120 -160 V -5 2SB649 2SB649A V V Collector cut-off current ICBO , 500 mA, IB=- 50mA DC current gain Collector-emitter saturation voltage 2SB649 2SB649A 60 , Collector output capacitance * C ob The 2SB649 and 2SB649A are grouped by h FE1 as follows. Rank
SeCoS
Original
2SB649 equivalent 2SB6490

2sb649

Abstract: 2sb649a Collector-base voltage Collector-emitter voltage 2SB649 2SB649A Emitter-base voltage Collector current Collector , voltage 2SB649 2SB649A Emitter to base breakdown voltage Collector cut-off current SYMBOL V(BR)CBO V , TECHNOLOGIES CO. LTD 1 QW-R201-048,A UTC 2SB649 /A PARAMETER 2SB649 DC current gain 2SB649A , UTC 2SB649 /A PNP EPITAXIAL SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR , . LTD 2 QW-R201-048,A UTC 2SB649 /A PNP EPITAXIAL SILICON TRANSISTOR UTC UNISONIC
Unisonic Technologies
Original

2SB649A

Abstract: 2SB649 2SB649/2SB649A PNP Epitaxial Planar Transistors 1. EMITTER 2. COLLECTOR 3. BASE P b Lead , http://www.weitron.com.tw -180 -120 1/5 V -160 V 21-Mar-06 2SB649/2SB649A , Voltage IC = -1.0mA, IE = 0 Collector-Base Breakdown Voltage 2SB649 IC = -10mA, IB = 0 2SB649A , -150mA 2SB649 2SB649A VCE = -5.0V, IC = -500mA Collector-Emitter Saturation Voltage IC = -500mA , /5 21-Mar-06 2SB649/2SB649A ­3 Collector current IC (A) 20 10 (­40 V, ­0.5 A) ­0.3
Weitron
Original
Abstract: 2SB649xL-x-AA3-R 2SB649xG-x-AA3-R 2SB649xL-x-AB3-R 2SB649xG-x-AB3-R 2SB649xL-x-T6C-K 2SB649xG-x-T6C-K 2SB649xL-x-T60-K 2SB649xG-x-T60-K 2SB649xL-x-T92-B 2SB649xG-x-T92-B 2SB649xL-x-T92-K 2SB649xG-x-T92-K 2SB649xL-x-T92-R 2SB649xG-x-T92-R 2SB649xL-x-T9N-B 2SB649xG-x-T9N-B 2SB649xL-x-T9N-K 2SB649xG-x-T9N-K 2SB649xL-x-TN3-R 2SB649xG-x-TN3-R www.unisonic.com.tw Copyright © 2013 Unisonic Technologies Co., Ltd , Breakdown Voltage 2SB649A Emitter to Base Breakdown Voltage Collector Cut-off Current 2SB649 DC Unisonic Technologies
Original
Abstract: 2SB649/2SB649A TRANSISTOR (PNP) TO- 126C FEATURES Low frequency power amplifier complementary , Parameter Value -180 V 2SB649 -120 123 V 2SB649A 2. COLLECTOR Units -160 , current gain hFE(2) VCE(sat) Collector-emitter saturation voltage IC=-10mA,IB=0 2SB649 2SB649A VCE=-5V,IC=-150mA 2SB649 2SB649A VCE=-5V,IC=-500mA 60 60 320 200 30 IC , capacitance CLASSIFICATION OF Range 2SB649 2SB649A V 140 MHz 27 pF hFE(1) B Rank Jiangsu Changjiang Electronics Technology
Original

transistor 649A

Abstract: 649A 2SB649/2SB649A TRANSISTOR (PNP) TO- 126 FEATURES Low frequency power amplifier complementary , Value -180 V 2SB649 -120 V 2SB649A 2. COLLECTOR Units -160 VCBO , hFE(2) VCE(sat) Collector-emitter saturation voltage IC=-10mA,IB=0 2SB649 2SB649A VCE=-5V,IC=-150mA 2SB649 2SB649A VCE=-5V,IC=-500mA 60 60 320 200 30 IC=-500mA,IB , OF Range 2SB649 2SB649A V 140 MHz 27 pF hFE(1) B Rank VCB=-10V,IE=0,f
Jiangsu Changjiang Electronics Technology
Original
transistor 649A 649A transistor 2sb649 JIANGSU CHANGJIANG TO-126 TO 126 FEATURES

2SB649

Abstract: 2SB649A HITACHI 2SB649, 2SB649A SILICON PNP EPITAXIAL LOW FREQUENCY POWER AMPLIFIER COMPLEMENTARY , (Ta=25°C) llcm Symbol 2SB649 2SB649A Unii Collector to base voltage Veno -180 -180 v Collector to , ) Item Symbol Test Condition 2SB649 2SB649A Unit in in. typ. max. min. typ. max. Collector to , 2SB649 and 2SB649A are grouped by h rei as follows. * Pulse Test B C D 2SB649 60 to 120 100 to 200 160 lo 320 2SB649A 60 to 120 100 to 200 â'" 2SB649, 2SB649A AREA OF
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OCR Scan
u02a 1-I60V 2SB64SJA

2SB649A

Abstract: transistor 2sb649 2SB649/2SB649A 2SB649/2SB649A TRANSISTOR (PNP) TO-126C FEATURES Power dissipation PCM: 1 W (Tamb=25) 1. EMITTER Collector current ICM: -1.5 A Collector-base voltage V V(BR , MAX UNIT -180 2SB649 2SB649A IE=-1mA, IC=0 -120 -160 V -5 Ic=-10mA, IB=0 V , IEBO VEB=-4V, IC=0 -10 µA hFE(1) VCE=-5V, IC=-150mA 2SB649A DC current gain hFE(2) Collector-emitter saturation voltage VCE(sat) 2SB649 VCE=-5V, IC=-500mA 60 60 320 200 30 IC
WEJ Electronic
Original

Hitachi DSA002787

Abstract: ALL 2SB649A 2SB649, 2SB649A Silicon PNP Epitaxial Application Low frequency power amplifier complementary pair with 2SD669/A Outline TO-126 MOD 1 1. Emitter 2. Collector 3. Base 2 3 2SB649 , = 25°C Tj Tstg 1 2SB649 ­180 ­120 ­5 ­1.5 ­3 1 20 150 ­55 to +150 2SB649A ­180 ­160 ­5 ­1.5 ­3 1 20 150 ­55 to +150 Unit V V V A A W W °C °C 2 2SB649, 2SB649A Electrical Characteristics (Ta = 25°C) 2SB649 Item Collector to base breakdown voltage Collector to emitter breakdown
Hitachi
Original
Hitachi DSA002787 ALL 2SB649A

2SB649A

Abstract: DSA003644 2SB649, 2SB649A Silicon PNP Epitaxial ADE-208-856 (Z) 1st. Edition Sep. 2000 Application , . Emitter 2. Collector 3. Base 2 3 2SB649, 2SB649A Absolute Maximum Ratings (Ta = 25°C) Ratings Item Symbol 2SB649 2SB649A Unit Collector to base voltage VCBO ­180 ­180 , °C Note: 2 1. Value at TC = 25°C 2SB649, 2SB649A Electrical Characteristics (Ta = 25°C) 2SB649 Item Symbol Min Collector to base breakdown voltage V(BR)CBO Collector to emitter
Hitachi Semiconductor
Original
DSA003644 2SB649A HITACHI

2SB669

Abstract: 2SB669A UNISONIC TECHNOLOGIES CO., LTD 2SB649/A PNP EPITAXIAL SILICON TRANSISTOR BIPOLAR POWER GENERAL , TO-126 *Pb-free plating product number:2SB649/AL ORDERING INFORMATION Order Number Normal Lead Free Plating 2SB649-x-T60-A-K 2SB649L-x-T60-A-K 2SB649A-x-T60-A-K 2SB649AL-x-T60-A-K Package TO-126 TO , Copyright © 2005 Unisonic Technologies Co., Ltd 1 of 4 QW-R204-006,B 2SB649/A PARAMETER , PNP EPITAXIAL SILICON TRANSISTOR SYMBOL VCBO 2SB649 2SB649A VCEO VEBO IC lC(PEAK) PD PD TJ TSTG
Unisonic Technologies
Original
2SB649/AL
Showing first 20 results.