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Part : 2SB647C-E Supplier : Renesas Electronics Manufacturer : Rochester Electronics Stock : 2,312 Best Price : $0.31 Price Each : $0.38
Part : 2SB647CTZ-E Supplier : Renesas Electronics Manufacturer : Rochester Electronics Stock : 14,740 Best Price : $0.21 Price Each : $0.25
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2SB647 Datasheet

Part Manufacturer Description PDF Type
2SB647 Hitachi Semiconductor Silicon PNP Epitaxial Original
2SB647 Renesas Technology Silicon PNP Epitaxial Low frequency power amplifier Original
2SB647 Renesas Technology Silicon PNP Epitaxial Transistor Original
2SB647 Renesas Technology Silicon PNP Epitaxial Original
2SB647 Transys Electronics Plastic-Encapsulated Transistors Original
2SB647 N/A Transistor Shortform Datasheet & Cross References Scan
2SB647 N/A Basic Transistor and Cross Reference Specification Scan
2SB647 N/A Shortform Transistor PDF Datasheet Scan
2SB647 N/A Japanese Transistor Cross References (2S) Scan
2SB647 N/A Cross Reference Datasheet Scan
2SB647 N/A Catalog Scans - Shortform Datasheet Scan
2SB647 N/A The Transistor Manual (Japanese) 1993 Scan
2SB647 N/A The Japanese Transistor Manual 1981 Scan
2SB647 N/A Transistor Substitution Data Book 1993 Scan
2SB647 N/A Shortform Transistor Datasheet Guide Scan
2SB647 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
2SB647 N/A Shortform Data and Cross References (Misc Datasheets) Scan
2SB647A Hitachi Semiconductor Silicon PNP Epitaxial Transistor Original
2SB647A Renesas Technology Silicon PNP Epitaxial Low frequency power amplifier Original
2SB647A Renesas Technology Silicon PNP Epitaxial Transistor Original
Showing first 20 results.

2SB647

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: 2SB549 2SB1086 2SA 682 â'" Ã" S 2SB1144 2SA1358 2SB548 2SB647 2SA935 2SA 683 â'" fò T 2SB544 2SA950 2SB647 2SB1035 2SA934 2SA 684 - ta t 2SA1705 2SA817 2SB647 2SA1283 2SB1043 2SA 685 12 T , 2SA1398 2SA1515 2SA 696- = m 2SA984 2SA817 2SA953 2SB647 2SA720 2SA1399 2SA854 2SA 697 «â'" = m 2SA984 2SA817 2SA953 2SB647 2SA719 2SA1399 2SA935 2SA 698 = « 2SA1248 2SB1086 2SA 699- fâ t 2SB1142 , '" 2SB647 2SB1041 2SA 707 b m 2SB544 2SA950 2SB647 2SA934 2SA 708 x b a 2SB560 2SA1096 2SA1399 -
OCR Scan
2SA1782 2SA836 2SA970 2SA1018 2SA930 2SA844 2sa1015 2SA984 sanyo 2sB1064 2SA705 2SB507 2SB596 2SA985 2SB856 2SB941 2SB1033
Abstract: 2SB647/2SB647A 2SB647/2SB647A TO-92MOD TRANSISTOR (PNP) FEATURE Power dissipation PCM: 1. EMITTER 2. COLLECTOR 0.9 W (Tamb=25) Collector current ICM: -1 A Collector-base voltage , =1 MHz Collector-emitter breakdown voltage 2SB647 2SB647A Emitter-base breakdown voltage Collector cut-off current DC current gain 2SB647 2SB647A Collector-emitter saturation voltage Transition , hFE Rank Range B C D 2SB647 60-120 100-200 160-320 2SB647A 60-120 WEJ Electronic
Original
2sB647 transistor 2SB647A equivalent 150MA60 2SB647/2SB647A
Abstract: 2SB647, 2SB647A Silicon PNP Epitaxial Application · Low frequency power amplifier · Complementary pair with 2SD667/A Outline 2SB647, 2SB647A Absolute Maximum Ratings (Ta = 25°C) Item , IC iC(peak) PC Tj Tstg 2SB647 ­120 ­80 ­5 ­1 ­2 0.9 150 ­55 to +150 2SB647A ­120 ­100 ­5 ­1 ­2 0.9 , ­10 V, IE = 0 f = 1 MHz Collector output capacitance Cob Notes: 1. The 2SB647 and 2SB647A are grouped by h FE1 as follows. 2. Pulse test B 2SB647 2SB647A 60 to 120 60 to 120 C 100 to 200 100 to 200 D Hitachi
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2sd667 2sb647 Hitachi DSA002754
Abstract: 2SB647 / 2SB647A PNP General Purpose Transistors P b Lead(Pb)-Free 2 1 3 1 2 3 1 , +150 °C WEITRON 1/5 Rating http://www.weitron.com.tw 09-Dec-08 2SB647 / 2SB647A , =-10V, IE=0 f=1 MHz - 20 pF 2SB647 IB=0 2SB647A Emitter-base breakdown voltage Collector cut-off current 2SB647 2SB647A DC current gain Collector-emitter saturation voltage Transition , -Dec-08 2SB647 / 2SB647A Typical Characteristics WEITRON http://www.weitron.com.tw 3/5 09 Weitron
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Abstract: MCC TM Micro Commercial Components 2SB647(A)-B 2SB647(A)-C 2SB647-D #1;#2;#3;#4;#5;#6;#7;#5;#8;#8; #4;#3;#2; , Vdc L OFF CHARACTERISTICS V(BR)CEO 2SB647 2SB647A V(BR)CBO V(BR)EBO I CBO , CHARACTERISTICS hFE 2SB647 2SB647A VCE(sat) 60 60 DC Current Gain (IC= -150mAdc, V CE= -5Vdc , 2SB647 Range 2SB647A E C 100-200 100-200 D 160-320 F G H J K L M INCHES MIN , details. www.mccsemi.com Revision: B 1 of 4 2013/07/22 MCC 2SB647(A) Micro Commercial Micro Commercial Components
Original
Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SB647/2SB647A TOï¼ï¼™ï¼'MODã'' ã'' TRANSISTORï¼ PNP ) FEATURE Power dissipation , , IE=0 2SB647 2SB647A Emitter-base breakdown voltage Collector cut-off current 2SB647 2SB647A , =1 MHz -1 V 140 MHz 20 CLASSIFICATION OF h FE B C D 2SB647 60-120 100-200 160-320 2SB647A 60-120 100-200 - Rank Range pF TO-92MOD PACKAGE OUTLINE DIMENSIONS Jiangsu Changjiang Electronics Technology
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500TYP 059TYP
Abstract: 2SB647,2SB647A Silicon PNP Epitaxial HITACHI Application · Low frequency power amplifier · , 2SB647, 2SB647A Absolute Maximum Ratings item Collector to base vo tage Collector to emitter voltage , 2SB647 and 2SB647A are grouped by hFE, as follows. 2. Pulse test B 2SB647 2SB647A C D 100 to 200 100 to 200 160 to 320 - 60 to 120 60 to 120 204 HITACHI 2SB647, 2SB647A Maximum Collector , 2SB647, 2SB647A Saturation Voltage vs. Collector Current Collector Current lc (mA) Gain Bandwidth -
OCR Scan
2sb647ac i251 2SD667 2SD667A
Abstract: MCC TM Micro Commercial Components 2SB647(A)-B 2SB647(A)-C 2SB647-D #1;#2;#3;#4;#5;#6;#7;#5;#8;#8; #4;#3;#2; , Vdc OFF CHARACTERISTICS V(BR)CEO 2SB647 2SB647A V(BR)CBO V(BR)EBO I CBO L , hFE 2SB647 2SB647A VCE(sat) 60 60 DC Current Gain (IC= -150mAdc, V CE= -5Vdc , DIMENSIONS D Rank 2SB647 Range 2SB647A E C B STRAIGHT LEAD BENT LEAD BULK PACK AMMO PACK , packaging for details. w w w.m c c se m i.c om Revision: B 1 of 4 2013/07 /22 MCC 2SB647(A -
Original
Abstract: 2SB647, 2SB647A Silicon PNP Epitaxial ADE-208-1025 (Z) 1st. Edition Mar. 2001 Application · , 2. Collector 3. Base 3 2 1 2SB647, 2SB647A Absolute Maximum Ratings (Ta = 25°C) Item Symbol 2SB647 2SB647A Unit Collector to base voltage VCBO ­120 ­120 V , 2SB647A Max Min Typ Notes: 1. The 2SB647 and 2SB647A are grouped by h FE1 as follows. 2. Pulse test B C D 2SB647 60 to 120 100 to 200 160 to 320 2SB647A 60 to 120 100 to Hitachi Semiconductor
Original
Hitachi DSA0076 D-85622
Abstract: 2sb562 2sa683 2sb1035 2sb1237 2sb 526 â'ž = s 2sb631 2sa966 2sa985 2sb647 2sb1309 2sb 527 h m 2sb631 2sa815 2sa985 2sb647 2sa1110 2sb1086 2sb 528 - -. m 2sb631 2sa814 2sb546a 2sb647 2sa1110 , 2sb861 2sb1085a 2sb 547 , h « 2sa816 2sb861 2sb1186a 2sb 548 â'¢ h m 2sb631 2sb647 2sa794 2sb1007 2sb 549 - B m 2sb631 2sb647 2sa794 2sb1086 2sb 550 - B 1 2sb633 2sb595 2sb859 2sb1293 -
OCR Scan
2SB415 sanyo 2sb509 NEC B 536 2sb631 hitachi 2SB631 2SB557 TOSHIBA
Abstract: 2SB647/2SB647A TO-92MOD TRANSISTOR (PNP) FEATURE Power dissipation PCM: 1. EMITTER 2 , Cob VCE=-10V, IE=0 f=1 MHz 2SB647 IB=0 2SB647A Emitter-base breakdown voltage Collector cut-off current 2SB647 2SB647A -10 ÂuA 320 200 DC current gain Collector-emitter , CLASSIFICATION OF hFE Rank B C D 2SB647 60-120 100-200 160-320 2SB647A 60-120 100-200 - Range pF Typical Characteristics 2SB647/2SB647A Jiangsu Changjiang Jiangsu Changjiang Electronics Technology
Original
Abstract: Information Part Name 2SB647CTZ-E 2SB647DTZ-E 2SB647ABTZ-E 2SB647ACTZ-E 2500 Quantity Shipping Container Hold , 2SB647, 2SB647A Silicon PNP Epitaxial REJ03G0648-0200 (Previous ADE-208-1025) Rev.2.00 Aug , temperature Symbol VCBO VCEO VEBO IC iC(peak) PC Tj Tstg 2SB647 ­120 ­80 ­5 ­1 ­2 0.9 150 ­55 to +150 2SB647A , 2SB647, 2SB647A Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage , output capacitance Notes: 1. The 2SB647 and 2SB647A are grouped by hFE1 as follows. 2. Pulse test B C D Renesas Technology
Original
2SB647C PRSS0003DC-A
Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SB647/2SB647A TO-92MOD TRANSISTOR (PNP) FEATURE Power dissipation PCM: 1. EMITTER 2 , breakdown voltage 2SB647 2SB647A Emitter-base breakdown voltage Collector cut-off current 2SB647 2SB647A -10 uA 320 200 DC current gain Collector-emitter saturation voltage Transition , 2SB647 60-120 100-200 160-320 2SB647A 60-120 100-200 - Range pF Jiangsu Jiangsu Changjiang Electronics Technology
Original
Abstract: HITACHI 2SB647, 2SB647A SILICON PNP EPITAXIAL LOW FREQUENCY POWER AMPLIFIER Complementary , nun) (J ED EC TO-92 MOD.) ABSOLUTE MAXIMUM RATINGS (Ta=256C) Item Symbol 2SB647 2SB647A Unit ! , =25°C) Item Symbol Test Condition 2SB647 2SB647A Unit min. typ. max. min. typ. max. Collector to , '" pF 'Hic 2SB647 and 2SB647A are grouped by hir.i as follows. ' I'lllsc Tcs-1 B C a 2SÃ647 60 to 120 100 K» 200 160 io 32t) 2SB647A fifl loi 20 100 to 200 - HITACHI 2SB647, 2SB647A TYPICAL -
OCR Scan
B647A 2S8647 B647 D667
Abstract: MCC Micro Commercial Components TM omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SB647(A)-B 2SB647(A)-C 2SB647-D PNP Silicon Plastic-Encapsulate Transistor TO-92MOD A L K , OFF CHARACTERISTICS V(BR)CEO 2SB647 2SB647A Collector-Emitter Breakdown Voltage (IC= -1mAdc, IB , H J V(BR)CBO V(BR)EBO I CBO ON CHARACTERISTICS hFE 2SB647 2SB647A VCE(sat) DC , CLASSIFICATION OF HFE (1) Rank 2SB647 Range 2SB647A B 60-120 60-120 C 100-200 100-200 D 160-320 F G H J K L M Micro Commercial Components
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Abstract: Information Part Name 2SB647CTZ-E 2SB647DTZ-E 2SB647ABTZ-E 2SB647ACTZ-E Quantity 2500 Shipping , 2SB647, 2SB647A Silicon PNP Epitaxial REJ03G0648-0200 (Previous ADE-208-1025) Rev.2.00 Aug , (peak) 2SB647 ­120 ­80 ­5 ­1 ­2 2SB647A ­120 ­100 ­5 ­1 ­2 Unit V V V A A , +150 0.9 150 ­55 to +150 W °C °C Rev.2.00 Aug 10, 2005 page 1 of 5 2SB647, 2SB647A , - - Collector output capacitance Notes: 1. The 2SB647 and 2SB647A are grouped by hFE1 as Renesas Technology
Original
Abstract: FORM AT I ON Ordering Number Lead Free Halogen Free 2SB647L-x-T9N-B 2SB647G-x-T9N-B 2SB647L-x-T9N-K 2SB647G-x-T9N-K www.unisonic.com.tw Copyright © 2013 Unisonic Technologies Co., Ltd Package TO , UNISO TE NIC CHNO G SCO LTD LO IE ., 2SB647 PNP EPITAXIAL SILICON TRANSISTOR SI LI CON PN , -010.B 2SB647  PNP EPITAXIAL SILICON TRANSISTOR ABSOLU T E M AX I M U M RAT I N GS (TA=25°C, unless , www.unisonic.com.tw C 100-200 D 160-320 2 of 4 QW-R211-010.B 2SB647  PNP EPITAXIAL SILICON Unisonic Technologies
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2SB647L- 2SB647G-
Abstract: K) 2SA1096 2SA 545 1, - a a 2SA984 2SB647 2SA1096 2SA 546 V fô T 2SB647 2SA1096 2SB1041 2SA 546A fö T 2SB647 2SA1096A 2SB1041 2SA 547 fé T 2SB856 2SA748 2SB1086 2SA 547A fâ T -
OCR Scan
2SA1309A 2SA933 2SA1339 2SA1755 2SA673 2SA-1015 2sa518 2SA1636
Abstract: 2SB647, 2SB647A Silicon PNP Epitaxial Application · Low frequency power amplifier · Complementary pair with 2SD667/A Outline TO-92MOD 1. Emitter 2. Collector 3. Base 3 2 1 2SB647, 2SB647A Absolute Maximum Ratings (Ta = 25°C) Item Symbol 2SB647 2SB647A Unit Collector to , * Collector output capacitance Cob 1 Typ 2SB647A Max Min Typ Notes: 1. The 2SB647 and 2SB647A , ­3 ­10 ­30 ­100 ­300 ­1,000 Collector Current IC (mA) 3 2SB647, 2SB647A ­0.6 ­0.5 ­0.4 Hitachi Semiconductor
Original
transistor 2sd667 Hitachi DSA00335 To-92mod
Abstract: products contained therein. 2SB647, 2SB647A Silicon PNP Epitaxial ADE-208-1025 (Z) 1st. Edition , TO-92MOD 1. Emitter 2. Collector 3. Base 3 2 1 2SB647, 2SB647A Absolute Maximum Ratings (Ta = 25°C) Item Symbol 2SB647 2SB647A Unit Collector to base voltage VCBO , capacitance Cob 1 Typ 2SB647A Max Min Typ Notes: 1. The 2SB647 and 2SB647A are grouped by h , ­50 mA*2 VCE = ­5 V, I C = ­150 mA*2 VCB = ­10 V, IE = 0 f = 1 MHz 2SB647, 2SB647A Maximum Hitachi Semiconductor
Original
Abstract: . 2SB647, 2SB647A Silicon PNP Epitaxial REJ03G0648-0200 (Previous ADE-208-1025) Rev.2.00 Aug , (peak) 2SB647 ­120 ­80 ­5 ­1 ­2 2SB647A ­120 ­100 ­5 ­1 ­2 Unit V V V A A , +150 0.9 150 ­55 to +150 W °C °C Rev.2.00 Aug 10, 2005 page 1 of 5 2SB647, 2SB647A Electrical Characteristics (Ta = 25°C) Collector to base breakdown voltage V(BR)CBO 2SB647 Min , - - Collector output capacitance Notes: 1. The 2SB647 and 2SB647A are grouped by hFE1 as Renesas Technology
Original
Showing first 20 results.