-100V 2SB601 - Datasheet Archive

INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION ·High DC Current Gain: hFE = 2000(Min)@ IC=

isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION ·High DC Current Gain: hFE = 2000(Min)@ IC= -3A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = -100V -100V(Min) ·Low Collector-Emitter Saturation Voltage: VCE(sat) = -1.5V(Max)@ IC= -3A APPLICATIONS ·Designed for use in low-frequency power amplifiers and lowspeed switching applications. ·Ideal for use in direct drive from IC output for magnet drivers such as terminal equipment or cash registers. ABSOLUTE MAXIMUM RATINGS (Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -5 A ICM Collector Current-Peak -8 A IB Base Current-DC -0.5 A B PC Tj Tstg Collector Power Dissipation TC=25 30 Collector Power Dissipation Ta=25 1.5 Junction Temperature 150 -55~150 Storage Temperature Range isc Websitewww.iscsemi.cn W 2SB601 2SB601 isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor 2SB601 2SB601 ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -3A, IB1= -3mA, L= 1mH VCE(sat) Collector-Emitter Saturation Voltage IC= -3A ,IB= -3mA -1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= -3A ,IB= -3mA -2.0 V ICBO Collector Cutoff Current VCB= -100V -100V, IE= 0 -10 A ICEX Collector Cutoff Current VCE= -100V -100V, VBE(off)= 1.5V TC=125 -10 -1.0 A IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -3 mA hFE-1 DC Current Gain IC= -3A ; VCE= -2V 2000 hFE-2 DC Current Gain IC= -5A ; VCE= -2V 500 -100 UNIT V 15000 Switching times Turn-on Time tstg 0.5 Storage Time RL= 17, VCC -50V IC= -3A; IB1= -IB2= -3mA Fall Time tf hFE-1 Classifications M L K 2000-5000 3000-7000 5000-15000 isc Websitewww.iscsemi.cn s 1.0 s 1.0 ton s