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2SB553 Datasheet

Part Manufacturer Description PDF Type
2SB553 Micro Commercial Components PNP Silicon Power Transistor Original
2SB553 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan
2SB553 Motorola Motorola Semiconductor Data & Cross Reference Book Scan
2SB553 N/A Basic Transistor and Cross Reference Specification Scan
2SB553 N/A Transistor Shortform Datasheet & Cross References Scan
2SB553 N/A Shortform Transistor PDF Datasheet Scan
2SB553 N/A Japanese Transistor Cross References (2S) Scan
2SB553 N/A Cross Reference Datasheet Scan
2SB553 N/A Catalog Scans - Shortform Datasheet Scan
2SB553 N/A Catalog Scans - Shortform Datasheet Scan
2SB553 N/A Catalog Scans - Shortform Datasheet Scan
2SB553 N/A The Transistor Manual (Japanese) 1993 Scan
2SB553 N/A Transistor Substitution Data Book 1993 Scan
2SB553 N/A The Japanese Transistor Manual 1981 Scan
2SB553 N/A Shortform Data and Cross References (Misc Datasheets) Scan
2SB553 N/A PNP Transistor, TO-220AB Scan
2SB553 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
2SB553 Toshiba Silicon PNP Triple Diffused Transistor Scan
2SB553-O N/A Transistor Shortform Datasheet & Cross References Scan
2SB553-Y N/A Transistor Shortform Datasheet & Cross References Scan

2SB553

Catalog Datasheet MFG & Type PDF Document Tags

2SB553

Abstract: 2SD553 Inchange Semiconductor Product Specification 2SB553 Silicon PNP Power Transistors DESCRIPTION With TO-220C package Complement to type 2SD553 Low collector saturation voltage APPLICATIONS , temperature -50~150 Inchange Semiconductor Product Specification 2SB553 Silicon PNP Power , Inchange Semiconductor Product Specification 2SB553 Silicon PNP Power Transistors PACKAGE OUTLINE , ) 3 Inchange Semiconductor Product Specification 2SB553 Silicon PNP Power Transistors
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Original
VCC-30V

2SB553

Abstract: 2SD553 JMnic Product Specification 2SB553 Silicon PNP Power Transistors DESCRIPTION With TO-220C package Complement to type 2SD553 Low collector saturation voltage APPLICATIONS High , Tstg Storage temperature -50~150 JMnic Product Specification 2SB553 Silicon PNP , -1Classifications O Y 70-140 120-240 2 JMnic Product Specification 2SB553 Silicon PNP Power , Product Specification 2SB553 Silicon PNP Power Transistors 4 JMnic
JMnic
Original

2SB553

Abstract: 2SD553 SavantIC Semiconductor Product Specification 2SB553 Silicon PNP Power Transistors DESCRIPTION ·With TO-220C package ·Complement to type 2SD553 ·Low collector saturation voltage , Specification 2SB553 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified , dimensions (unindicated tolerance:±0.10mm) 3 2SB553 SavantIC Semiconductor Product Specification 2SB553 Silicon PNP Power Transistors 4 -
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Original

2SB553

Abstract: TO SH IBA TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) 2SB553 HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. 2SB553 INDUSTRIAL APPLICATIONS Unit in , VOLTAGE REGION) O o I O 50 H H 2001 05-24 - a o 3 2SB553 TO SH IBA 2SB553 VBE(sat) - IC -1 0 ic - vbe Z D cö HS < W Pi > HM -1 - Tc = -55°C Il ^ , SH IBA 2SB553 RESTRICTIONS ON PRODUCT USE 000707EAA TOSHIBA is continually w orking J 2
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OCR Scan
2-10A1A

2SA1385

Abstract: 2SB1256 2SB553 2SA1385 2SB1447 2SB 1450 s n 2SB553 2SB1177 2SB 1451 h n 2SB1176 2SB 1452- h n
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OCR Scan
2SB1395 2SA1266 2SB1446 2SB1434 2SA1363 2SB892 2SB1256 2SA1020 2SB1015 2SA1770 2SB1441

2SB553

Abstract: 55vl SILICON PNP TRIPLE DIFFUSED TYPE 2SB553 INDUSTRIAL APPLICATIONS Unit in mm 03.6 ± 0.2 HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. FEATURES: · Low Collector Saturation Voltage : VcE(sat)=~0.4V (Max.) at Ic=-4A · Complementray to 2SD553. MAXIMUM RATINGS (Ta=25°C) SYMBOL VCBO VcEO , ) Classification 0 : 70^140, Y : 120^240 203 2SB553 STATIC CHARACTERISTICS c3 k V t* -fl IV w a J& q , L L E C T O R C U R R E N T I c ( A) 204 2SB553 vbe Coat) Basb: -E M IT T
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OCR Scan
55vl 100X100X2

2SA1115

Abstract: 2sa1015 n 2SB834 2SB929 2SB 1267 ^ H 2SB553 2SA1129 2SB934 2SB 1268 V = # 2SA1012 2SA1129 2SB933 2SB 1269 - 3 m 2SB553 2SA1129 2SB934 2SB 1270 H 2SA1293 2SA1069A 2SB933 2SB 1271 =
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OCR Scan
2SA1225 2SA1178 2SB1226 2SB1024 2SB1342 2SB1227 2SA1115 2sa1015 2SB1340 2SA1432 2SA1015L

2SB553

Abstract: 2SD553 isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB553 DESCRIPTION ·Low Collector Saturation Voltage :VCE(sat)= -0.4(V)(Max)@IC= -4A ·Complement to Type 2SD553 APPLICATIONS ·High current switching applications. ·Power amplifier applications. .cn mi e ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL scs .i w PARAMETER VCBO Collector-Base Voltage VCEO , Semiconductor isc Silicon PNP Power Transistor 2SB553 ELECTRICAL CHARACTERISTICS TC=25 unless
INCHANGE Semiconductor
Original
Abstract: ' / 9097250 TOSHIBA (DISCRETE/OPTO) 5òC Ã732B ü T - 3 2 » ' I f 2SB553 STATIC VCE , | ^ 7 5 5 0 5oL u ' 32 9 / 000735e 5 ] D f â'3 B * ^ â'™ 2SB553 ï c ^b e Csat -
OCR Scan
1DT72SG
Abstract: : 70- 140, Y : 120- 240 300 2SB553 IC - VCE VCE - IC (LO W V O L T A G E R EG , COLLECTOR C U R R EN T 301 2SB553 V BE(sat) - IC BASE-EMITTER SATURATION VOLTAGE VB E(sat) «V -
OCR Scan
SC-46

2SB553

Abstract: 0732c -YOSHTBX^TDTSCRETE/OPTOI "St DEJITCHTSSO 0007358 0 / 9097250 TOSHIBA , | ^7550 â¡ â¡0732c] E 9097250 TOSHIBA {DISCRETE/OPTO) 5ÃL U fiZ'T" D-f-33-^' 2SB553 vBE vbe Csat) -
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OCR Scan
0732c D0D7357 150X150X3 100X100X 70X70X 35X35X

2SB504

Abstract: 2SB506A 2SB553 Ã"S PSW/PA -70 -50 -7 1. 5 40 -30 -70 70 240 -1 -1 -0.4 -1. 2 -4 -0.4 2SB554 Ã"S PA -180 -180 , * 2SD553 TO-220AB» BCE 2SB553 6* -5 -2 450* 2SD424 TO-3» BEC 2SB554 150* -10 -0.05 0.05* 0.06
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OCR Scan
2SB504 2SB504A 2SB506 2SB506A 2SB507 2SB508 2SB511 2SB434G 2SB435G 2SB502A 2SB503A
Abstract: MCC omponents 21201 Itasca Street Chatsworth !"# $ % !"# 2SB553 Features · · PNP Silicon Power Transistors With TO-220 package Amplifier applications Maximum Ratings Symbol V CEO V CBO V EBO IC PC TJ TSTG Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Collector power dissipation Junction Temperature Storage Temperature Rating 50 70 5.0 7.0 40 -55 to +150 -55 to +150 TO-220 Unit V V V Micro Commercial Components
Original

transistor regulator tv

Abstract: 2SC2242 2 80 400 400 40 20 40 2SC3710 2SC3309 2SD1571 2SA1452 2SA1012 2SA1293 2SB553 7 2SB753 10 80 200 50
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OCR Scan
TQ-220 2SC2242 2SC3558 2SC3346 2S01088 2SC3559 transistor regulator tv transistor 2sd526 tv transistor T0-220 2SC1569 2SC2073 2SD1052

2sD553

Abstract: 2SB553 Inchange Semiconductor Product Specification 2SD553 Silicon NPN Power Transistors · DESCRIPTION ·With TO-220C package ·Complement to type 2SB553 ·Low collector saturation voltage APPLICATIONS ·High current switching applications ·Power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open
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Original

2SD553

Abstract: 2SB553 SavantIC Semiconductor Product Specification 2SD553 Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·Complement to type 2SB553 ·Low collector saturation voltage APPLICATIONS ·High current switching applications ·Power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open
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Original

2SA748

Abstract: 2SB927 2SA 769 - â Ã¶-virv 2SB596 2SB858 2SB942 2SA1634 2SA 770 2SB553 2SB566AOO 2SB942 2SB1289
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OCR Scan
2SB548 2SA715 2SB1043 2SA985 2SA748 2SB1064 2SB927 2SA757B 2sa763 2SA1705 2SA684 2SB817

TO-3P

Abstract: 2sc3783 2SB754 7 2SB553 2SA1012 2SA1387 5 2SC3420 2SC4684 2SC4685 2SA1793 2SC2562 2SC4657 2SC4881 2SA1794 2SA1293
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OCR Scan
TO-3P 2sc3783 2sc2655 2sc3233 2sd717 2sa1329 2SC3075 2SC3425 2SC3233 2SC507S 2SC4917 2SC3405

2SB553

Abstract: 2SD553 2SB553 V IJ =I >PNP=«ÃÉTO(PCT^^¡ o m^íiiíiffl â als >j 9 miltA^ è ^o : Ic= â'" 7A - ix X i'läft'Sff.^iS^o : VCE (sat) = -0.4V(M±) (Iq= -4A) a W > f-tñ&Plcé '-"o : Pç = 40W(Te = 25°C) 2SD553 ¿ 3 > 7' 'J X > ? 'J IC íf i? á fe Ux:éfë(Ta = 250C) m X : JTt FI r- mLi 7J Wi 3 1y 7 9 â'¢ ^ - X Fa] It )'£ vCBO -70 V n ? ? . i = 7 9 Psi] 1 J:-b VCEO -50 V i ; 7 ? â'¢ ^ - X Hfl H J± vEBO -5 V n P X ? S y¡£ ic -7 A ^ - X H ht Ià -1 A 3 X ? il ife Ta = 25Â
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OCR Scan
VCC--30V

2SA1622

Abstract: 2SA1699 2SB1467 2SB553 2SB925 2SA 1641 â" 2SA1649 2SB952 2SA 1643 -y-virv 2SB1467 2SB1019 2SB1097
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OCR Scan
2SA1772 2SA1641 RN2206 2SA1162 2SA1022 2SA1235 2SA1622 2SA1699 2SA1586 2s8817 2SB1198K 2SB936 UN4116 2SA1781
Abstract: SILICON NPN TRIPLE DIFFUSED TYPE 2SD553 INDUSTRIAL APPLICATIONS _ Unit In mm 10.3MAX. HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. FEATURES: · Low Saturation Voltage : vCE(sat)=0-4v (Max.) (at IC=4A) · Complementary to 2SB553. W ¿o 0 3 ,6 ±0.2 e.si MAXIMUM RATINGS (Ta=25DC) SYMBOL vCB0 V CE0 vEB0 ic Ta=25°C Tc=25°C PC Tj Tstg (Ta=25°C) SYMBOL ICBO IEB0 v (BR)CE0 ^FE(l) (Note) hFE(2) vCE(sat) vBE(sat) fT cob ton tstg cf 0 : 70VL40, i CHARACTERISTIC -
OCR Scan
220AB

2SD553

Abstract: 2SD553 POWER AMPLIFIER APPLICATIONS. FEATURES: · Low Saturation Voltage SILICON NPN TRIPLE DIFFUSED TYPE HIGH CURRENT SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS _ Unit In 00.3MAX. 0 1 6 = 0 .2 - : vCE(sat)=°-4V (Max.) (at IC=4A) · Complementary to 2SB553. 1.5 2 ^ MAXIMUM RATINGS (Ta=25, , C) ir F. SYMBOL vCB0 VCE0 v EB0 ic Ta=25 °C Tc=25°C PC Tj Tstg (Ta=25°C) SYMBOL iCBO !e BO v (BR)CEO hFE(l) (Note; hFE(2) vCE(sat) ^BEisat) fT C0b con tstg Ib i
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OCR Scan
7CH140 12CK240
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