2SB544 2SD400 EN0199 IT04917 IT04918 IT04919 IT04920 IT04921 IT04922 --10V

Ordering number : EN0199 Preliminary SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SB544 /

2SB544 2SB544 / 2SD400 2SD400 Ordering number : EN0199 EN0199 Preliminary SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SB544 2SB544 / 2SD400 2SD400 Low-Frequency Power Amplifier Electronic Governor Applications Specifications ( ) : 2SB544 2SB544 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Symbol Conditions Ratings Unit (-)25 Collector-to-Emitter Voltage VCBO VCEO (-)25 V Emitter-to-Base Voltage VEBO (-)5 V IC ICP (-)1 A Collector Current (Pulse) (-)2 A Collector Dissipation PC 900 mW 150 °C -55 to +150 °C Collector Current Junction Temperature Tj Storage Temperature Tstg V Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings min typ max Unit Collector Cutoff Current ICBO VCB=(-)20V, IE=0A (-)1.0 A Emitter Cutoff Current IEBO hFE1 VEB=(-)4V, IC=0A (-)1.0 A VCE=(-)2V, IC=(-)50mA hFE2 VCE=(-)2V, IC=(-)1A fT Cob VCE=(-)10V, IC=(-)50mA VCE(sat) IC=(-)500mA, IB=(-)50mA (-0.15) 0.1 (-0.7)0.3 VBE(sat) V(BR)CBO IC=(-)500mA, IB=(-)50mA (-)0.85 (-)1.2 DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage V(BR)CEO V(BR)EBO 60* 560* 30 180 VCB=(-)10V, f=1MHz MHz (25)15 pF V V IC=(-)10A, IE=0A (-)25 V IC=(-)1mA, RBE= (-)25 V IE=(-)10A, IC=0A (-)5 V * : The 2SB544 2SB544 / 2SD400 2SD400 is classified by hFE at 50mA as follows. Rank D E F G hFE 60 to 120 100 to 200 160 to 320 280 to 560 Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 71608 TI IM No.0199-1/4 2SB544 2SB544 / 2SD400 2SD400 Package Dimensions unit : mm (typ) 7520-002 4.7 8.5 6.0 5.0 3.0 0.5 0.6 0.5 14.0 1.0 0.5 1 : Emitter 2 : Collector 3 : Base 1 2 3 SANYO : MP 1.45 IC - VCE -1.0 2SD400 2SD400 5mA -5mA -4mA -0.6 -3mA -2mA -0.4 -1mA -0.2 -2 -3 -4 Collector-to-Emitter Voltage, VCE - V 3mA 2mA 0.4 1mA IB=0mA 0 1 2 3 4 5 Collector-to-Emitter Voltage, VCE - V IT04917 IT04917 IT04918 IT04918 IC - VBE 1.2 2SB544 2SB544 VCE= -2V 2SD400 2SD400 VCE=2V Collector Current, IC - A 1.0 -0.8 -0.6 Ta=7 5°C 25°C -25°C Collector Current, IC - A 0.6 0 -1.0 -0.4 -0.2 0 0 4mA -5 IC - VBE -1.2 0.8 0.2 IB=0mA 0 -1 6mA -6mA -0.8 0 IC - VCE 1.0 -7mA -8mA Collector Current, IC - A Collector Current, IC - A 2SB544 2SB544 0.8 0.6 Ta=7 5°C 25°C -25°C 1.45 0.4 0.2 -0.2 -0.4 -0.6 -0.8 -1.0 Base-to-Emitter Voltage, VBE - V -1.2 IT04919 IT04919 0 0 0.2 0.4 0.6 0.8 1.0 Base-to-Emitter Voltage, VBE - V 1.2 IT04920 IT04920 No.0199-2/4 2SB544 2SB544 / 2SD400 2SD400 hFE - IC 5 hFE - IC 5 2SB544 2SB544 VCE= -2V 3 Ta=75°C DC Current Gain, hFE DC Current Gain, hFE 3 2SD400 2SD400 VCE=2V 25°C 2 -25°C 100 5 -25°C 100 5 5 7 -0.01 2 3 5 7 -0.1 2 3 5 Collector Current, IC - A 7 -1.0 2 IT04921 IT04921 5 7 0.01 2 3 5 Gain-Bandwidth Product, f T - MHz 2 100 7 2 3 5 7 1.0 2 IT04922 IT04922 f T - IC 3 2SB544 2SB544 VCE= -10V 7 0.1 Collector Current, IC - A f T - IC 3 Gain-Bandwidth Product, f T - MHz 25°C 2 7 7 5 2SD400 2SD400 VCE=10V 2 100 7 5 5 7 -0.01 2 3 5 7 -0.1 2 3 5 Collector Current, IC - A 7 -1.0 IT04923 IT04923 5 2 3 5 7 2 0.1 3 5 2SD400 2SD400 f=1MHz Output Capacitance, Cob - pF 7 5 3 2 10 7 1.0 IT04924 IT04924 Cob - VCB 100 2SB544 2SB544 f=1MHz 7 7 0.01 Collector Current, IC - A Cob - VCB 100 Output Capacitance, Cob - pF Ta=75°C 5 3 2 10 7 7 5 7 2 -1.0 3 5 7 2 -10 Collector-to-Base Voltage, VCB - V 5 3 2 -100 5°C =7 Ta 3 5 -2 2 °C °C 25 -10 3 5 7 2 10 3 IT04926 IT04926 VCE(sat) - IC 2SD400 2SD400 IC / IB=10 5 Collector-to-Emitter Saturation Voltage, VCE(sat) - mV 5 5 2 1.0 7 2SB544 2SB544 IC / IB=10 7 7 Collector-to-Base Voltage, VCB - V VCE(sat) - IC 7 Collector-to-Emitter Saturation Voltage, VCE(sat) - mV 3 IT04925 IT04925 3 2 100 7 °C 75 5°C 25°C -2 = Ta 5 3 2 10 7 5 7 5 5 7 -0.01 2 3 5 7 -0.1 2 3 Collector Current, IC - A 5 7 -1.0 2 IT04927 IT04927 5 7 0.01 2 3 5 7 0.1 2 3 Collector Current, IC - A 5 7 1.0 2 IT04928 IT04928 No.0199-3/4 2SB544 2SB544 / 2SD400 2SD400 VBE(sat) - IC 2 -1.0 Ta= -25°C 7 75°C 25°C 5 3 2 2SD400 2SD400 IC / IB=10 2 1.0 Ta= -25°C 7 75°C 25°C 5 3 2 5 7 -0.01 2 3 5 7 -0.1 2 3 5 7 -1.0 2 IT04929 IT04929 Collector Current, IC - A 5 Collector Dissipation, PC - mW s 0m ms 10 s 1.0 5 DC 3 op era tio 2 n 0.1 5 Ta=25°C Single pulse For PNP, the minus sign is omitted. 3 2 5 1.0 2 3 5 3 5 7 0.1 2 3 5 7 1.0 2 IT04930 IT04930 PC - Ta 2SB544 2SB544 / 2SD400 2SD400 900 1m 10 2 1000 2SB544 2SB544 / 2SD400 2SD400 2 7 0.01 Collector Current, IC - A ASO 3 Collector Current, IC - A VBE(sat) - IC 3 2SB544 2SB544 IC / IB=10 Base-to-Emitter Saturation Voltage, VBE(sat) - V Base-to-Emitter Saturation Voltage, VBE(sat) - V 3 800 700 600 500 400 300 200 100 0 10 2 Collector-to-Emitter Voltage, VCE - V 3 5 IT04931 IT04931 0 20 40 60 80 100 120 Ambient Temperature, Ta - °C 140 160 IT04932 IT04932 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of July, 2008. Specifications and information herein are subject to change without notice. PS No.0199-4/4