2SB1690K/2SB1690 2SB1690 2SB1690K SC-59 -20IB2 - Datasheet Archive

 

Transistors General purpose amplification(-12V, -2A) 2SB1690K/2SB1690 External dimensions (Unit : mm) Application Low frequency

 

2SB1690K/2SB1690 2SB1690K/2SB1690 Transistors General purpose amplification(-12V, -2A) 2SB1690K/2SB1690 2SB1690K/2SB1690 External dimensions (Unit : mm) Application Low frequency amplifier Deiver 0.4 Each lead has same dimensions 1.0MAX 0.85 0.7 0~0.1 (1) (2) 0.95 0.95 1.9 2.9 ROHM : TSMT3 0.16 Abbreviated symbol : FV Packaging specifications (1) Base (2) Emitter (3) Collector Taping Package 3000 0.4 2SB1690 2SB1690 (2) (1) T146 3000 Basic ordering unit (pieces) 0.95 0.95 1.9 2.9 TL Code (3) 1.6 2SB1690K 2SB1690K 0~0.1 0.3Min. Absolute maximum ratings (Ta=25°C) 0.8 0.15 2.8 1.1 Type 0.3~0.6 2.8 Features 1) A collector current is large. 2) Collector saturation voltage is low. VCE(sat) -180mV at IC=1A / IB= -50mA 1.6 (3) Each lead has same dimensions Parameter Symbol Limits Unit Collector-base voltage VCBO -15 V Collector-emitter voltage VCEO -12 V Emitter-base voltage VEBO -6 V IC -2 A lcp -4 Collector current Collector power dissipation 2SB1690K 2SB1690K (1) Emitter (2) Base (3) Collector A 200 PC mW 500 2SB1690 2SB1690 Abbreviated symbol : FV ROHM : SMT3 EIAJ : SC-59 SC-59 JEDEC : SOT-346 Junction temperature Tj 150 °C Storage temperature Tstg -55 to +150 °C Single pulse Pw=1ms Electrical characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Collector-base breakdown voltage BVCBO -15 - - V IC=-10µA Collector-emitter breakdown viltage BVCEO -12 - - V IC=-1mA Emitter-base breakdown voltage BVEBO -6 - - V IE=-10µA Collector cutoff current ICBO - - -100 nA VCB=-15V Emitter cutoff current IEBO - - -100 nA VEB=-6V VCE(sat) - -120 -180 mV IC=-1A, IB=-50mA hFE 270 - 680 - fT - 360 - MHz Cob - 15 - pF Parameter Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Pulsed Conditions VCE=-2V, IC=-200mA VCE=-2V, IE=200mA, f=100MHz VCB=-10V, IE=0mA, f=1MHz 1/2 2SB1690K/2SB1690 2SB1690K/2SB1690 Transistors Electrical characteristic curves 25°C -40°C 0.01 0.1 1 10 1 -40°C 25°C Ta=100°C 0.1 Ta=100°C 25°C -40°C 0.01 0.001 0.001 COLLECTOR CURRENT : IC (A) 10 IC/IB=10/1 0.01 0.001 0.001 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) 1000 1 Ta=100°C 25°C -40°C 0.1 0.01 0.001 0.5 1 1000 Ta=25°C VCE=-2V f=100MHz IC=20 IB1=-20IB2 -20IB2 Ta=25°C tstg f=100MHz 100 10 0.001 0.01 0.1 1 BASE TO EMITTER VOLTAGE : VBE (V) EMITTER CURRENT : IE (A) Fig.4 Grounded mitter propagation characteristics EMITTER INPUT CAPACITANCE:Cib (pF) COLLECTOR OUTPUT CAPACITANCE:Cob(pF) IC/IB=50/1 IC/IB=20/1 Fig.3 Collector-emitter saturation voltage vs. collector current TRANSITION FREQUENCY : fT : (MHz) COLLECTOR CURRENT IC : (A) 1 0.1 Fig.2 Collector-emitter saturation voltage base-emitter saturation voltage vs. collector current VCE=-2V PULSED 0 0.1 Ta=25°C PULSED COLLECTOR CURRENT : IC (A) Fig.1 DC current gain vs. collector current 10 0.01 1 SWITCHING TIME : (ns) 100 0.001 IC/IB=20 PULSED COLLECTOR SATURATION VOLTAGE : VCE(sat): (V) DC CURRENT GAIN : hFE 10 VCE=-2V PULSED Ta=100°C BASE SATURATION VOLTAGE : VBE(sat) : (V) COLLECTOR SATURATION VOLTAGE : VCE(sat)(V) 1000 Fig.5 Gain bandwidth product vs. emitter current 10 tr 100 tf tdon 10 1 0.001 0.01 0.1 1 COLLECTOR CURRENT : IC (A) Fig.6 Switching time 1000 Ta=25°C IE=0mA f=1MHz cib 100 cob 10 0.1 1 10 EMITTER TO BASE VOLTAGE : VEB (V) Fig.7 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emiter-base voltage 2/2