2002/95/EC 2SB1462J 2SD2216J SC-89 SJC00087CED - Datasheet Archive
Transistors 2SB1462J Silicon PNP epitaxial planar type For general amplification Complementary to 2SD2216J 1.00±0.05
This product complies with the RoHS Directive (EU 2002/95/EC 2002/95/EC). Transistors 2SB1462J 2SB1462J Silicon PNP epitaxial planar type For general amplification Complementary to 2SD2216J 2SD2216J 1.00±0.05 0.12+0.03 0.01 (0.375) 1.60±0.05 5° 2 · High forward current transfer ratio hFE · SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing 0 to 0.02 (0.50)(0.50) 5° 0.70+0.05 0.03 0.27±0.02 (0.80) ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low tp in o co n an in :// g nt n ce c g pa U in tin t e fo na RL ue ue ype typ ur so a d t d e Pr od ty ni bo yp p c. u e e uc ne t l d tl ife t/s ate cy c/ st en in cl e fo st rm ag at e. io n. 1 0.85+0.05 0.03 3 M Di ain sc te on na tin nc ue e/ d Features Unit: mm 0.80±0.05 1.60+0.05 0.03 Absolute Maximum Ratings Ta = 25°C Symbol Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Rating Unit VCBO -60 V VCEO -50 V VEBO -7 V IC Storage temperature 125 mW 125 -55 to +125 1: Base 2: Emitter 3: Collector EIAJ: SC-89 SC-89 SSMini3-F1 Package °C Tstg Junction temperature mA Tj Collector power dissipation mA -200 PC Peak collector current -100 ICP Collector current 0.10 max. Parameter Collector-base voltage (Emitter open) °C Marking Symbol: A Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Collector-base voltage (Emitter open) Min Typ IC = -10 µA, IE = 0 -60 V IC = -100 µA, IB = 0 -50 V -7 VEBO IE = -10 µA, IC = 0 ICBO VCB = -20 V, IE = 0 Collector-emitter cutoff current (Base open) ICEO VCE = -10 V, IE = 0 hFE VCE = -10 V, IC = -2 mA co is /D ce Forward current transfer ratio M ai nt en an Collector-emitter saturation voltage *1 Transition frequency Collector output capacitance (Common base, input open circuited) Unit VCEO Collector-base cutoff current (Emitter open) Emitter-base voltage (Collector open) Max VCBO nt in Collector-emitter voltage (Base open) Conditions VCE(sat) fT Cob IC = -100 mA, IB = -10 mA 160 - 0.3 V - 0.1 µA -100 µA 460 - 0.5 V VCB = -10 V, IE = 1 mA, f = 200 MHz 80 MHz VCB = -10 V, IE = 0, f = 1 MHz 2.7 pF Publication date: June 2007 Pl ea Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. SJC00087CED SJC00087CED 1 This product complies with the RoHS Directive (EU 2002/95/EC 2002/95/EC). 2SB1462J 2SB1462J PC Ta IC I B -120 VCE = -10 V Ta = 25°C -100 100 75 50 -1 000 -80 -800 -600 -60 -400 -40 -200 -20 25 0 20 40 60 0 80 100 120 140 160 0 Ambient temperature Ta (°C) Collector current IC (mA) Ta = 75°C -25°C -60 Collector-emitter saturation voltage VCE(sat) (V) VCE = -10 V -80 -10 -20 - 0.2 - 0.4 - 0.6 - 0.8 -1.0 -1.2 -1 Base-emitter voltage VBE (V) - 0.001 -1 Ta = 75°C 25°C -25°C -10 -100 Collector current IC (mA) Collector output capacitance C (pF) (Common base, input open circuited) ob Cob VCB 6 f = 1 MHz IE = 0 Ta = 25°C 5 4 3 2 1 0 -1 -10 -100 Collector-base voltage VCB (V) SJC00087CED SJC00087CED -1.2 hFE IC 360 IC / IB = 10 - 0.01 0 - 0.2 - 0.4 - 0.6 - 0.8 -1.0 0 Base-emitter voltage VBE (V) - 0.1 -40 0 0 -120 -180 -240 -300 -360 VCE(sat) IC 25°C -100 -60 Base current IB (µA) IC VBE -120 VCE = -10 V Ta = 25°C Base current IB (µA) Collector current IC (mA) 125 0 2 IB VBE -1 200 Forward current transfer ratio hFE Collector power dissipation PC (mW) 150 -1 000 VCE = -10 V Ta = 75°C 300 25°C 240 -25°C 180 120 60 0 -1 -10 -100 Collector current IC (mA) -1 000 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. 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