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Part : 2SB1324-TD-E Supplier : ON Semiconductor Manufacturer : Rochester Electronics Stock : 8,000 Best Price : $0.19 Price Each : $0.24
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2SB1321A Datasheet

Part Manufacturer Description PDF Type
2SB1321A Panasonic PNP Transistor Original
2SB1321A Panasonic Silicon PNP Epitaxial Planar Type Transistor Original
2SB1321A Panasonic Silicon PNP epitaxial planer type Original
2SB1321A N/A The Transistor Manual (Japanese) 1993 Scan
2SB1321A N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
2SB1321A N/A Shortform Data and Cross References (Misc Datasheets) Scan
2SB1321A Panasonic PNP Transistor Scan
2SB1321A0A Panasonic Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS PNP LF AMP 50VCEO MT-1 Original
2SB1321AQ Panasonic Silicon PNP Epitaxial Planar Type Transistor Original
2SB1321AS Panasonic Silicon PNP Epitaxial Planar Type Transistor Original

2SB1321A

Catalog Datasheet MFG & Type PDF Document Tags

2SD1992

Abstract: 2SB1321  Panasonic 2SB1321, 2SB1321A y 0 =i > PNP x * v 7^7°-tM cfctf K7 -f -Jm 2SD1992, 2SD1992A t , '¢ 3 PM ilÃ" S (600mW) mmxztS (Ta = 25°C) Item Symbol Value Unit 2SB1321 Vcbo ~30 V 2SB1321A -60 ' Ml± 2SB1321 Vceo -25 V 2SB1321A -50 Vebo - 7 V - ' Icp - 1 A Ic -500 mA Pc , M Iceo VCEâ'" â'" 20V, IB=0 . - 1 M 9 â'¢ 2SB1321 Vcbo IC=-10M, IE=0 -30 V 2SB1321A -60 x5 y 9»JE 2SB1321 Vceo Ic=- 2 mA, IB= 0 -25 V 2SB1321A -50 Vebo Ie=-10M, Icâ'" 0 - 7 V
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OCR Scan
200MH

2SB1321A

Abstract: 2SD1992A Transistor 2SB1321A Silicon PNP epitaxial planer type For low-frequency output amplification and driver amplification Complementary to 2SD1992A Unit: mm 0.15 q Allowing supply with the radial taping. Large collector power dissipation PC. (600mW) 1.0 q 0.8 s Features , classification Rank Q R S hFE1 85 ~ 170 120 ~ 240 170 ~ 340 1 2SB1321A , to emitter resistance RBE (k) 2SB1321A Transistor ICEO - Ta 104 VCE=­10V ICEO (Ta
Panasonic
Original
Abstract: This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SB1321A Silicon PNP epitaxial planar type For low-frequency output amplification and driver amplification Complementary to 2SD1992A Features · Allowing supply with the radial taping · Large collector power , RoHS Directive (EU 2002/95/EC). 2SB1321A PC Ta 800 IC VCE -1.2 Ta = 25°C - 0.8 - 0.7 IC , This product complies with the RoHS Directive (EU 2002/95/EC). 2SB1321A ICEO Ta 104 VCE = -10 V Panasonic
Original

2SB1321A

Abstract: 2SD1992A Transistors 2SB1321A Silicon PNP epitaxial planer type Unit: mm 6.9±0.1 4.0 0.8 0.15 0.7 1.05 2.5±0.1 (1.45) ±0.05 0.8 1.0 I Features 3.5±0.1 For general amplification Complementary to 2SD1992A 0.85 14.5±0.5 0.65 max. · Large collector power dissipation PC (600 mW) · , no indication for rank. 1 2SB1321A Transistors PC Ta IC VCE IB = -10 mA -9 mA -8 , emitter resistance RBE (k) Transistors 2SB1321A ICEO Ta 104 VCE = -10 V ICEO (Ta) ICEO
Panasonic
Original
Abstract: This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SB1321A Silicon PNP epitaxial planar type For low-frequency output amplification and driver amplification Complementary to 2SD1992A Unit: mm 6.9±0.1 (4.0) 2.5±0.1 (0.8) â  Features (0.8) (1.0 , SJC00079BED 1 This product complies with the RoHS Directive (EU 2002/95/EC). 2SB1321A PC  Ta , the RoHS Directive (EU 2002/95/EC). 2SB1321A ICEO  Ta VCE = â'10 V 103 102 10 Panasonic
Original

2SB1321A

Abstract: 2SD1992A Transistors 2SB1321A Silicon PNP epitaxial planar type For low-frequency output amplification and driver amplification Complementary to 2SD1992A Unit: mm 6.9±0.1 (4.0) 2.5±0.1 (0.8) Features (0.8) (1.0) 3.5±0.1 (0.7) 0.65 max. 14.5±0.5 (0.85) · Allowing supply with , SJC00079BED 1 2SB1321A PC Ta IC VCE 400 200 - 0.8 IB = -10 mA -9 mA -8 mA -7 mA , RBE (k) 2SB1321A ICEO Ta 104 VCE = -10 V ICEO (Ta) ICEO (Ta = 25°C) 103 102 10
Panasonic
Original
Abstract: This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SB1321A Silicon PNP epitaxial planar type For low-frequency output amplification and driver amplification Complementary to 2SD1992A Features · Allowing supply with the radial taping · Large collector power , RoHS Directive (EU 2002/95/EC). 2SB1321A PC Ta 800 IC VCE -1.2 Ta = 25°C - 0.8 - 0.7 IC , This product complies with the RoHS Directive (EU 2002/95/EC). 2SB1321A ICEO Ta 104 VCE = -10 V Panasonic
Original

2SB1321A

Abstract: 2SD1992A This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SB1321A Silicon PNP epitaxial planar type For low-frequency output amplification and driver amplification Complementary to 2SD1992A Unit: mm 6.9±0.1 (4.0) 2.5±0.1 (0.8) ue pl d in an c se ed lud pl vi , SJC00079BED 1 This product complies with the RoHS Directive (EU 2002/95/EC). 2SB1321A PC Ta IC , Directive (EU 2002/95/EC). 2SB1321A ICEO Ta 104 VCE = -10 V ICEO (Ta) ICEO (Ta = 25°C) 103
Panasonic
Original

2SB1321A

Abstract: 2SD1992A Transistors 2SB1321A Silicon PNP epitaxial planer type Unit: mm 6.9±0.1 4.0 0.8 0.15 0.7 1.05 2.5±0.1 (1.45) ±0.05 0.8 1.0 I Features 3.5±0.1 For general amplification Complementary to 2SD1992A 0.85 14.5±0.5 0.65 max. · Large collector power dissipation PC (600 mW) · , no indication for rank. 1 2SB1321A Transistors PC Ta IC VCE IB = -10 mA -9 mA -8 , emitter resistance RBE (k) Transistors 2SB1321A ICEO Ta 104 VCE = -10 V ICEO (Ta) ICEO
Panasonic
Original

2SB1335A

Abstract: 2SB1333 - 86 - m « tt « (Ta=25'C, *EP(ÃTc=25T;) W. g W t# te (Ta=25cO) [*ED(itypfi] VcBO (V) VcEO (V) Ici DC) (A) Pc (») Pc» (W) IcBO, (max) (uk) Vcb (V) (min) (max) Ven (V) ic/ÃE (A) (max) (V) (V) le (A) IB (A) 2SB1320A fôT G A -60 -50 -0.1 0.4 -1 -20 160 460 -10 -0.002 -1 -0.1 -0.01 2SB1321A ftT LF A/ D -60 -50 -0.5 0.6 -0.1 -20 85 340 -10 , 2SD1992A (MT-1) ECB 2SB1321A 200* -10 0.05 30 2SD1994A (MT-2) ECB 2SB1322A 100* -2 -0.5 55* RI
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OCR Scan
2SB1323 2SB1324 2SB1325 2SB1326 2SB1333 2SB1334 2SB1335A 2SD2021 2SB1365 2SB1353 2sb1355 2SB132ZA

2SA1115

Abstract: 2sa1015 2SA1552 2SA1006 2SB1409 2SB1199 2SB 1276 â¡ â'"A 2SA984 2SA1015(L) 2SA953 2SB1321A 2SA1115 2SB
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OCR Scan
2SA1225 2SA1178 2SB1226 2SB1024 2SB1342 2SB1227 2SB1340 2SA1432 2SA1015L 2SB1370 A1592

DSA003720

Abstract: DSA00372081 Transistors 2SD1992A Silicon NPN epitaxial planer type Unit: mm 6.9±0.1 4.0 0.8 0.15 0.7 1.05 2.5±0.1 (1.45) ±0.05 0.8 1.0 I Features 3.5±0.1 For general amplification Complementary to 2SB1321A 0.85 14.5±0.5 0.65 max. · Low collector to emitter saturation voltage VCE(sat) · Allowing supply with the radial taping +0.1 I Absolute Maximum Ratings Ta = 25°C 1 Symbol Rating VCBO 60 V Collector to emitter voltage VCEO 50 V Emitter to base
Panasonic
Original
DSA003720 DSA00372081

2SB1321A

Abstract: 2SD1992A Transistor 2SD1992A Silicon NPN epitaxial planer type For low-frequency power strengthening and drive Complementary to 2SB1321A Unit: mm 0.15 q Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping. 1.0 q 0.8 s Features 1.05 2.5±0.1 (1.45) ±0.05 0.8 4.0 3.5±0.1 6.9±0.1 0.7 0.85 14.5±0.5 0.65 max. +0.1 (Ta=25°C) 0.45­0.05 Ratings Unit Collector to base voltage VCBO 60 Collector to
Panasonic
Original
Abstract: This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SD1992A Silicon NPN epitaxial planar type For low-frequency power strengthening and drive Complementary to 2SB1321A (0.7) Unit: mm 6.9±0.1 (4.0) 2.5±0.1 (0.8) (1.0) 3.5±0.1 Features · Low collector-emitter saturation voltage VCE(sat) · Allowing supply with the radial taping 0.65 max. (0.85) Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base Panasonic
Original

2SB1321A

Abstract: 2SD1992A Transistors 2SD1992A Silicon NPN epitaxial planar type For low-frequency power strengthening and drive Complementary to 2SB1321A Unit: mm 6.9±0.1 (4.0) 2.5±0.1 (0.8) Features · Low collector-emitter saturation voltage VCE(sat) · Allowing supply with the radial taping (0.8) (1.0) 3.5±0.1 (0.7) 14.5±0.5 (0.85) 0.65 max. Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 60 V Collector-emitter voltage
Panasonic
Original
Abstract: This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SD1992A Silicon NPN epitaxial planar type For low-frequency power strengthening and drive Complementary to 2SB1321A Unit: mm â  Features â'¢ Low collector-emitter saturation voltage VCE(sat) â'¢ Allowing supply with the radial taping (0.8) M Di ain sc te on na tin nc ue e/ d 2.5±0.1 (0.8) (1.0) 3.5±0.1 6.9±0.1 (4.0) (0.7) d pla inc Pl ea ne lud se pla m d m es vis ne ain ain foll Panasonic
Original

2SB1321A

Abstract: 2SD1992A Transistors 2SD1992A Silicon NPN epitaxial planer type Unit: mm 6.9±0.1 4.0 0.8 0.15 0.7 1.05 2.5±0.1 (1.45) ±0.05 0.8 1.0 I Features 3.5±0.1 For general amplification Complementary to 2SB1321A 0.85 14.5±0.5 0.65 max. · Low collector to emitter saturation voltage VCE(sat) · Allowing supply with the radial taping +0.1 I Absolute Maximum Ratings Ta = 25°C 1 Symbol Rating VCBO 60 V Collector to emitter voltage VCEO 50 V Emitter to base
Panasonic
Original

2SD2037

Abstract: 2SD2001 2SD1991A 200* 10 -0.01 15 2SB1321A (MM) ECB 2SD1992A 200* IO -0. 002 m Ma* 150mV Gv=80dB/Rg
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OCR Scan
2SD1988 2SD1989 2SD1990 2SD1993 2SD1995 2SD1996 2SD2037 2SD2001 2sd2033 2sd2039
Abstract: This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SD1992A Silicon NPN epitaxial planar type For low-frequency power strengthening and drive Complementary to 2SB1321A (0.7) Unit: mm 6.9±0.1 (4.0) 2.5±0.1 (0.8) (1.0) 3.5±0.1 Features · Low collector-emitter saturation voltage VCE(sat) · Allowing supply with the radial taping 0.65 max. (0.85) Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base Panasonic
Original

2SB1321A

Abstract: 2SD1992A This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SD1992A Silicon NPN epitaxial planar type For low-frequency power strengthening and drive Complementary to 2SB1321A Unit: mm M Di ain sc te on na tin nc ue e/ d 6.9±0.1 (4.0) 2.5±0.1 (0.8) ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low tp in o co n an in :// g nt n ce c g pa U in tin t e fo na RL ue ue ype typ ur so a d t d e Pr
Panasonic
Original
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