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Part : 2SB1274R Supplier : ON Semiconductor Manufacturer : Rochester Electronics Stock : 19,862 Best Price : $0.35 Price Each : $0.43
Part : 2SB1274R-SA Supplier : SANYO Electric Manufacturer : Rochester Electronics Stock : 8,300 Best Price : - Price Each : -
Part : 2SB1274R-SA Supplier : ON Semiconductor Manufacturer : Rochester Electronics Stock : 44,325 Best Price : - Price Each : -
Part : 2SB1274S Supplier : ON Semiconductor Manufacturer : Rochester Electronics Stock : 4,703 Best Price : - Price Each : -
Part : 2SB1274 Supplier : - Manufacturer : basicEparts Stock : 20 Best Price : - Price Each : -
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2SB1274 Datasheet

Part Manufacturer Description PDF Type
2SB1274 Sanyo Semiconductor 60V-3A Low-Frequency Power Amplifier Applications Original
2SB1274 Various Russian Datasheets Transistor Original
2SB1274 N/A Scan
2SB1274 N/A The Transistor Manual (Japanese) 1993 Scan
2SB1274 N/A Transistor Substitution Data Book 1993 Scan
2SB1274 N/A Shortform Data and Cross References (Misc Datasheets) Scan
2SB1274 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
2SB1274 N/A Shortform Data and Cross References (Misc Datasheets) Scan
2SB1274 N/A Transistor Shortform Datasheet & Cross References Scan
2SB1274 N/A Japanese Transistor Cross References (2S) Scan
2SB1274 Sanyo Semiconductor TO-220ML, TO-220MF Type Transistors Scan
2SB1274 Sanyo Semiconductor General Purpose Transistors Scan
2SB1274 Sanyo Semiconductor Transistors / Switching Transistors Scan
2SB1274 Sanyo Semiconductor General Purpose Transistors Scan
2SB1274Q N/A Transistor Shortform Datasheet & Cross References Scan
2SB1274R N/A Transistor Shortform Datasheet & Cross References Scan
2SB1274R Sanyo Semiconductor 60V/3A Low-Frequency Power Amplifier Applications Scan
2SB1274S SANYO Electric Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS PNP 60V 3A TO-220ML Original
2SB1274S N/A Transistor Shortform Datasheet & Cross References Scan

2SB1274

Catalog Datasheet MFG & Type PDF Document Tags

2sb1274

Abstract: 2SB1274 equivalent Inchange Semiconductor Product Specification 2SB1274 Silicon PNP Power Transistors DESCRIPTION With TO-220F package Complement to type 2SD1913 High reliability. High breakdown voltage Low , Specification 2SB1274 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified , 280 100 MHz 60 pF Inchange Semiconductor Product Specification 2SB1274 , Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification 2SB1274
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Original
2SB1274 equivalent 2SB127

2SB1274

Abstract: 2SD1913 Ordering number : ENN2246B 2SB1274/2SD1913 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1274/2SD1913 60V/3A Low-Frequency Power Amplifier Applications Applications · Package Dimensions General power amplifier. unit : mm 2041A [2SB1274/2SD1913] · 16.0 5.6 · 2.4 1.6 1.2 , · 4.5 2.8 10.0 0.7 0.75 1 2 2.55 2.4 Specifications ( ):2SB1274 Absolute , 8-2055 No.2246-1/4 2SB1274/2SD1913 Continued from preceding page. Parameter Symbol hFE1 hFE2
SANYO Electric
Original
82055 D2000 transistor 2SB1274/2SD1913

Transistor TT 2246

Abstract: TT 2246 Ordering number : ENN2246B [ PNP/NPN Epitaxial Planar Silicon Transistors 2SB1274/2SD1913 60V , breakdown voltage. â'¢ Micaless package facilitating mounting. Specifications ( ):2SB1274 Absolute Maximum Ratings atTa=25°C Package Dimensions unit : mm 2041A 10.0 [2SB1274/2SD1913] »3.2 U , U XB , described or contained herein. 2SB1274/2SD1913 Continued from preceding page. Parameter Symbol Conditions , VCE 2SB1274 ^ // v ' //y^ _25mA. 'W/ _20mA_ ~15mA_ '-10mA -5mA
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OCR Scan
Transistor TT 2246 TT 2246 Sb127 sd1913

82055

Abstract: ENN2246B I Ordering number : ENN2246B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1274/2SD1913 60V , 2041A 10.0 [2SB1274/2SD1913] AS. *3.2 O ' O 13 .12 0.75 Specifications ( ):2SB1274 Absolute , IM 8-2055 No.2246-1/4 2SB1274/2SD1913 Continued from preceding page. Parameter Symbol Conditions , ito2xiv PS No.2246-2/4 2SB1274/2SD1913 hFE " 'C 1000 2 3 5 7 _0i 2 3 5 7 _i Q 2 3 5 Collector , lc UJ as > Collector Current, Collector Current, - A PS No.2246-3/4 2SB1274/2SD1913 ASO ASO
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OCR Scan
2SBB1274

2SB1274

Abstract: 2SD1913 SavantIC Semiconductor Product Specification 2SB1274 Silicon PNP Power Transistors DESCRIPTION ·With TO-220F package ·Complement to type 2SD1913 ·High reliability. ·High breakdown voltage , Storage temperature -55~150 SavantIC Semiconductor Product Specification 2SB1274 Silicon , Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 2SB1274 SavantIC Semiconductor Product Specification 2SB1274 Silicon PNP Power Transistors 4 -
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Original
2SB1274 R
Abstract: 2SB1274 -3A , -60V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of â'-Câ' specifies halogen & lead-free TO-220J FEATURES General Purpose Switching and Amplification. Wide ASO (Adoption of MBIT Process) Low Saturation Voltage. CLASSIFICATION OF hFE Product-Rank 2SB1274-Q 2SB1274-R 2SB1274-S Range 70~140 100~200 140~280 Collector 2 3 Base 1 Emitter ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise SeCoS
Original
Abstract: 2SB1274(PNP) TO-220 Transistor 1. BASE 2. COLLECTOR 3. EMITTER TO-220 Features 1 2 3 Wide ASO (Adoption of MBIT process). Low saturation voltage. High reliability. High breakdown voltage. MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector- Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current , MAX UNIT V V V A A 2SB1274(PNP) TO-220 Transistor Typical Characteristics - -
Original
Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SB1274 TRANSISTOR (PNP) TO-220 1. BASE FEATURES 2. COLLECTOR Wide ASO (Adoption of MBIT process). Low saturation voltage. High reliability. High breakdown voltage. 3. EMITTER MAXIMUM RATINGS (TA=25â"ƒ unless otherwise noted) Symbol Parameter Value Units VCBO Collector , ) Q R S 70-140 100-200 140-280 A,Mar,2011 Typical Characteristics 2SB1274 A Jiangsu Changjiang Electronics Technology
Original

2sB1274 transistor

Abstract: 2SB1274 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SB1274 TRANSISTOR (PNP) TO-220 1. BASE FEATURES 2. COLLECTOR Wide ASO (Adoption of MBIT process). Low saturation voltage. High reliability. High breakdown voltage. 3. EMITTER 123 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector , ) Q R S 70-140 100-200 140-280 Typical Characteristics 2SB1274 Jiangsu
Jiangsu Changjiang Electronics Technology
Original
2sB1274 transistor

2sB1274 transistor

Abstract: 2SB1274 isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1274 DESCRIPTION ·High Reliability ·Low Collector Saturation Voltage : VCE(sat)= -1.0V(Max)@IC= -2A ·Wide Area of Safe Operation APPLICATIONS ·Designed for low frequency power amplifier applications. .cn mi e ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Emitter Voltage , Power Transistor 2SB1274 ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL
INCHANGE Semiconductor
Original
transistor 2sb1274 GM322400

2SB1306

Abstract: 2sb1318 -0.2 2SB1274 Hff LF PA -60 -60 -3 2 20 -100 -40 70 280 -5 -0.5 -1 -2 -0.2 2SB1276 p â'"A LN A -50 , -0. 5 60* 2SD1913 (T0220ML) BCE 2SB1274 100* -6 -0.01 NV max i 50mV Gv=80dB Rg-lOOK (FTL
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OCR Scan
2SB1267 2SB1268 2SB1269 2SB1270 2SB1271 2SB1272 2SB1306 2sb1318 2sb130 2SD1832
Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SB1274 TRANSISTOR (PNP) TO-220 FEATURES 1. BASE Wide ASO (Adoption of MBIT Process). Low Saturation Voltage. High Reliability. High Breakdown Voltage. 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25â"ƒ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector- Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -6 Jiangsu Changjiang Electronics Technology
Original

2SD1913

Abstract: 2SB1274 Inchange Semiconductor Product Specification 2SD1913 Silicon NPN Power Transistors DESCRIPTION ·With TO-220F package ·Complement to type 2SB1274 ·High reliability. ·High breakdown voltage ·Low saturation voltage. ·Wide area of safe operation APPLICATIONS ·60V/3A low-frequency power amplifier ·General power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta
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Original

UMS1

Abstract: 2sb941 - 43 - m â'¬ Type No. a â'¬ Manuf. H SANYO S s TOSHIBA 0 « NEC 0 iL HITACHI » ± il FUJITSU fâ T MATSUSHITA = * MITSUBISHI P - A ROHM 2SA 1865 H $ 2SA1832 2S31462 2SA 1866 H # 2SA1832 2SB1462 2SA 1867 a i 2SA1745 2SA1588 2SB1475 2SB1219 2SA 1868 fé T 2SA1772 2SA1400-Z 2SA1727 2SA 1 869 . S 3> 2SB1274 2SA1359 2SB1094 2SB941 2SB1185 2SA 1873 SE S XP1401 UMS1 2SA 1875 H » 2SA1400-Z 2SA1868 2SA 1878 îïrlÃ'Tt; 2SB1454 2SB1381 2SA1650 2SB945 2SA 1879
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OCR Scan
2SB1308 UMS1 nec 772 1866 2sa158 2SA1869 2SB1455 2SB1021 2SA1651 2SB946 2SA1298 2SB766

2SB897

Abstract: 2SB1483 2SB1290 2SB 1487 K S 2SB1274 2SB1453 2SB1393 2SB1370 2SB 1488 fé T 2SA1785 2SA1776 2SB 1489
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OCR Scan
2SA1709 2SA1704 2SA1692 2SA1774 2SA1719 2SB348 2SB897 2SB1483 2sb1497 2sb1355 2SB1434 2SB1117 2SB1452

2SB1274

Abstract: 2SB1274 -3A , -60V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of â'-Câ' specifies halogen & lead-free TO-220J FEATURES    General Purpose Switching and Amplification. Wide ASO (Adoption of MBIT Process) Low Saturation Voltage. Collector ï'  ï'  Base ï'  Emitter ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Rating Unit Collector to Base Voltage VCBO -60 V
SeCoS
Original

2sb1355

Abstract: 2SB1493 - 75 - m s Type No. tt « Manuf. â'¢H ì$ SANYO M TOSHIBA B 9 NEC 0 iz HITACHI « ± ii FUJITSU fé T MATSUSHITA H 9 MITSUBISHI O-A ROHM 2SB 1541 te T 2SR562 2SB1329 2SB 1542 fé T 2SA1706 2SB1433 2SB1517 2S6 1543 fé T 2SA1707 2SB1517 2SB 1544 fé T 2SA1708 2SB1459 2SB1332 2SB 1545 fé T 2SA1770 2SB1328 2SB 1546 fé T 2SA1785 2SA1809 2SB 1548 V fé T 2SB1274 2SB1375 2SB1094 2SB1392 2SB1565 2SB 1549 â¡ -A 2SB1224 2SB1022 2SA1842 2SB1504 2SB 1550 â¡ â'"A
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OCR Scan
2SB1493 2SB1469 2SB1255 2SB1037 2SB906 2SB1314 2SB1516 2sb1261 te 1569 2SB1225 2SB675 2SD1603 2SB951 2SA1720 2SD2107

2SA1385

Abstract: 2SB1256 2SB1177 2SB 1453 S b b 2SB1274 2SB1015 2SB941 2SB1370 2SB 1454 h n 2SB1016 2SB945 2SB1294
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OCR Scan
2SB1395 2SA1266 2SB1446 2SA1363 2SB892 2SB1317 2SA1385 2SB1256 2SA1020 2SB1441

2SD1913

Abstract: 2SB1274 SavantIC Semiconductor Product Specification 2SD1913 Silicon NPN Power Transistors DESCRIPTION ·With TO-220F package ·Complement to type 2SB1274 ·High reliability. ·High breakdown voltage ·Low saturation voltage. ·Wide area of safe operation APPLICATIONS ·60V/3A low-frequency power amplifier ·General power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta
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Original

TRANSISTORS SANYO

Abstract: bma150 -220 2SB1274 2SD1913 h F E 70 Rank Classification. Q 140 100 R 200 140 S 280 ML 20 5 0.5 70 ~ 280 60 3 25 5 0.5
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OCR Scan
TRANSISTORS SANYO bma150 35VCEO 126ML CMA500 2SB632/K 2SD612/K 2SB1142 2SD1682 T0-126 T0-126ML

STK7348

Abstract: EQB01-150 or EQB01-150 C343 100/160 (105C) Q233 2SB1274 R396 150K 1/6W C271 47/160 (105C)! S¡S § + + , C341 470 p (YB) (22/160) C343 100/160 -p-(105C) Q233 2SB1274 47m H R395 150k 1/6W IC207 78M12
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OCR Scan
8C802 IC601 UZ-12BSB 2SC2271 L5631 STK7348 D526 d526 y Q609 BJ10K TEJ1EBM30PA 2SK1464 BC801 UZ-15658
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