2SB1221 2SC3941 - Datasheet Archive

2SB1221 Silicon PNP epitaxial planer type For general amplification Complementary to 2SC3941 Unit: mm 4.0±0.2 q q

Transistor 2SB1221 2SB1221 Silicon PNP epitaxial planer type For general amplification Complementary to 2SC3941 2SC3941 Unit: mm 4.0±0.2 q q 0.7±0.2 s Features 8.0±0.2 5.0±0.2 Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping. s Absolute Maximum Ratings 13.5±0.5 0.7±0.1 (Ta=25°C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 250 V Collector to emitter voltage VCEO 200 V Emitter to base voltage VEBO 5 V Peak collector current ICP 100 mA Collector current IC 70 mA Collector power dissipation PC 1 W Junction temperature Tj 150 °C Storage temperature Tstg 55 ~ +150 °C s Electrical Characteristics +0.15 1.27 1.27 +0.15 0.45 0.1 2.3±0.2 0.45 0.1 1 2 3 1:Emitter 2:Collector 3:Base TO92NL Package 2.54±0.15 (Ta=25°C) Parameter Symbol Conditions min typ Unit 2 µA ICBO Collector to emitter voltage VCEO IC = 100µA, IB = 0 200 V Emitter to base voltage VEBO IE = 1µA, IC = 0 5 V Forward current transfer ratio hFE * VCE = 10V, IC = 5mA 60 Collector to emitter saturation voltage VCE(sat) IC = 50mA, IB = 5mA Transition frequency fT VCB = 10V, IE = 10mA, f = 200MHz Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz *h FE VCB = 12V, IE = 0 max Collector cutoff current 220 1.5 50 80 5 V MHz 10 pF Rank classification Rank Q R hFE 60 ~ 150 100 ~ 220 1 2SB1221 2SB1221 Transistor PC - Ta IC - VCE 1.2 IC - I B 120 120 100 0.8 0.6 0.4 0.2 60 0.6mA 0.4mA 40 0.2mA 20 0 40 60 80 100 120 140 160 Ambient temperature Ta (°C) 60 40 0 0 2 4 6 8 10 0 Collector to emitter voltage VCE (V) IB - VBE 0.4 0.8 1.2 IC - VBE 2.4 100 VCE=10V 25°C Collector current IC (mA) 100 1.6 1.2 0.8 0.4 2.0 Ta=75°C 2.4 VCE(sat) - IC 120 VCE=10V Ta=25°C 2.0 1.6 Base current IB (mA) 25°C 80 60 Collector to emitter saturation voltage VCE(sat) (V) 20 80 20 0 0 Base current IB (mA) 100 1.8mA 1.6mA 1.4mA 1.2mA 1.0mA 0.8mA 80 VCE=10V Ta=25°C Collector current IC (mA) 1.0 Collector current IC (mA) Collector power dissipation PC (W) Ta=25°C IB=2mA IC/IB=10 30 10 3 1 0.3 40 25°C Ta=75°C 0.1 20 25°C 0.03 0 0 0.2 0.4 0.6 0.8 1.0 1.2 0 Base to emitter voltage VBE (V) 0.4 2.0 200 Ta=75°C 150 25°C 25°C 50 3 10 30 Collector current IC (mA) 100 3 10 30 100 16 VCB=10V Ta=25°C 140 120 100 80 60 40 0 0.1 1 Collector current IC (mA) Cob - VCB 20 1 0.01 0.1 0.3 160 Transition frequency fT (MHz) Forward current transfer ratio hFE 250 0 0.1 0.3 2 1.6 fT - I E VCE=10V 100 1.2 Base to emitter voltage VBE (V) hFE - IC 300 0.8 0.3 1 3 10 30 Emitter current IE (mA) 100 Collector output capacitance Cob (pF) 0 IE=0 f=1MHz Ta=25°C 14 12 10 8 6 4 2 0 1 3 10 30 100 Collector to base voltage VCB (V) 2SB1221 2SB1221 Transistor IEBO - Ta 10000 ICBO - Ta 10000 VEB=5V 1000 300 100 30 100 300 100 30 10 10 3 3 1 40 80 120 160 200 Ambient temperature Ta (°C) ICP t=10ms IC t=1s 30 10 3 1 0.3 1 0 Single pulse Ta=25°C 300 Collector current IC (A) ICBO (Ta) ICBO (Ta=25°C) 1000 VCB=250V 3000 IEBO (Ta) IEBO (Ta=25°C) 3000 Area of safe operation (ASO) 1000 0 40 80 120 160 200 Ambient temperature Ta (°C) 0.1 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) 3