2SD1781K 2SB1197K 96-220-D92 - Datasheet Archive

 

Medium Power Transistor (32V, 0.8A) 2SD1781K FFeatures 1) Very low VCE(sat). VCE(sat) t 0.4 V (Typ.) (IC / IB = 500mA / 50mA) 2)

 

Transistors Medium Power Transistor (32V, 0.8A) 2SD1781K 2SD1781K FFeatures 1) Very low VCE(sat). VCE(sat) t 0.4 V (Typ.) (IC / IB = 500mA / 50mA) 2) High current capacity in compact package. 3) Complements the 2SB1197K 2SB1197K. FExternal dimensions (Units: mm) FStructure Epitaxial planar type NPN silicon transistor FAbsolute maximum ratings (Ta = 25_C) (96-220-D92 96-220-D92) 268 Transistors 2SD1781K 2SD1781K FElectrical characteristics (Ta = 25_C) FPackaging specifications and hFE hFE values are classified as follows : FElectrical characteristic curves 269 Transistors 270 2SD1781K 2SD1781K