NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: Transistors Power Transistor (*60V, *3A) 2SB1184 2SB1184 / 2SB1243 2SB1243 / 2SB1185 FFeatures 1) Low VCE(sat). VCE(sat) = *0.5V (Typ.) (IC / IB = *2A / *0.2A) 2) Complements the 2SD1760 2SD1760 / 2SD1864 2SD1864 / 2SD1762 2SD1762. FExternal dimensions (Units: mm) FStructure Epitaxial planar type PNP silicon transistor , 2SB1184 2SB1184 / 2SB1243 2SB1243 / 2SB1185 Transistors 2SB1184 2SB1184 / 2SB1243 2SB1243 / 2SB1185 FElectrical characteristic curves 225 Transistors 226 2SB1184 2SB1184 / 2SB1243 2SB1243 / 2SB1185 ... | Original |
4 pages, |
transistor 2SB1243 power transistor 3A 2SD1864 2SD1762 2SD1760 2SB1184 hFE is transistor 2sB1243 2SB1185 2SB1243 2SB1184 abstract |
| Abstract: SavantIC Semiconductor Product Specification 2SB1185 Silicon PNP Power Transistors DESCRIPTION ·With TO-220Fa package ·Low collector saturation votlage ·Complement to type 2SD1762 2SD1762 APPLICATIONS ·For use in low frequency power amplifer applications PINNING PIN DESCRIPTION 1 , Storage temperature -55~150 SavantIC Semiconductor Product Specification 2SB1185 Silicon , Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm) 3 2SB1185 ... | Original |
3 pages, |
2SD1762 2sb118 2SB1185 2SB1185 abstract |
| Abstract: Inchange Semiconductor Product Specification 2SB1185 Silicon PNP Power Transistors DESCRIPTION With TO-220Fa package Low collector saturation votlage Complement to type 2SD1762 2SD1762 APPLICATIONS For use in low frequency power amplifer applications PINNING PIN DESCRIPTION 1 Emitter , Product Specification 2SB1185 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise , Inchange Semiconductor Product Specification 2SB1185 Silicon PNP Power Transistors PACKAGE ... | Original |
3 pages, |
2SD1762 2SB1185 2SB1185 abstract |
| Abstract: JMnic Product Specification 2SB1185 Silicon PNP Power Transistors DESCRIPTION With TO-220Fa package Low collector saturation votlage Complement to type 2SD1762 2SD1762 APPLICATIONS For use in low frequency power amplifer applications PINNING PIN DESCRIPTION 1 Emitter 2 , temperature -55~150 JMnic Product Specification 2SB1185 Silicon PNP Power Transistors , 160-320 2 MIN TYP. 60 MAX UNIT 320 JMnic Product Specification 2SB1185 ... | Original |
3 pages, |
2SD1762 2SB1185 2SB1185 abstract |
| Abstract: 2SB1185 2SB1185 TRANSISTOR (PNP) TO-220 FEATURES 1. BASE Power dissipation PCM: 2. COLLECTOR 2 W (Tamb=25) 3. EMITTER Collector current ICM: -3 A Collector-base voltage -60 V V(BR)CBO: Operating and storage junction temperature range 123 TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol unless otherwise specified) Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=-50uA, IE=0 ... | Original |
1 pages, |
2SB1185 2SB1185 abstract |
| Abstract: 2SB1185 2SB 1071A fé T 2SB1185 2SB 1073 fé T 2SB1302 2SB1302 2SB1386 2SB1386 2SB 1074 fé T 2SA1785 2SA1785 ... | OCR Scan |
1 pages, |
2sb891 25B501 2SA1173 2SA1200 2SA1384 2SA1415 2SA1705 2SA683 2SB1015 1055 2SB793 2SB1370 2SB764 2SB605 2SB507 2SB764 abstract |
| Abstract: Transistors Power Transistor (-60V, -3A) 2SB1184/2SB1243/2SB1185 •Features 1) LOW VcE(sai). , : SC-63 SC-63 2SB1185 (1)Base (2) Collector (3) Emitter .+0,3 5-0,1 s+0.1 3 -0.05 n+0.2 -0.1 2.6±05 (1 , (1) Emitter (2) Collector (3) Base (96-126-B57 96-126-B57) RDHm 205 Transistors 2SB1184/2SB1243/2SB1185 , 2SB1185 2 25 W(Tc=25°C) Junction temperature Tj 150 °C Storage temperature Tstg -55-150 °C * 1 , ratio 2SB1185 60 - 320 - Transition frequency fT - 70 - MHz Vce=-5V, Ie=0.5A, f=30MHz Output ... | OCR Scan |
5 pages, |
2SD1760 2SB1243 2SB1184 2SB1185 2SB1184/2SB1243/2SB1185 2SD1760/ 2SD1864/2SD1762 2SB1184/2SB1243/2SB1185 abstract |
| Abstract: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1185 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -50V(Min.) ·Good Linearity of hFE ·Low Collector Saturation Voltage: VCE(sat)= -1.0V(Max.)@ IC= -2A ·Complement to Type 2SD1762 2SD1762 APPLICATIONS ·Power amplifier applications. ·Driver stage amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 , isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1185 ... | Original |
2 pages, |
2SD1762 2SB1185 2SB1185 abstract |
| Abstract: Transistors Power Transistor (50V, 3A) 2SD1760 2SD1760 / 2SD1864 2SD1864 / 2SD1762 2SD1762 FFeatures 1) Low VCE(sat), VCE(sat) = 0.5V (Typ.) (IC / IB = 2A / 0.2A) 2) Complements the 2SB1184 2SB1184 / 2SB1243 2SB1243 / 2SB1185. FExternal dimensions (Units: mm) FStructure Epitaxial planar type NPN silicon transistor (96-214-D57 96-214-D57) 264 Transistors 2SD1760 2SD1760 / 2SD1864 2SD1864 / 2SD1762 2SD1762 FAbsolute maximum ratings (Ta = 25_C) FElectrical characteristics (Ta = 25_C) FPackaging specifications and hFE hFE values are classified as ... | Original |
4 pages, |
Transistor npn 2SD1864 2SB1243 2SB1184 2sb118 2SD1762 2SB1185 2SD1760 2SD1760 abstract |
| Abstract: - 43 - m € Type No. a € Manuf. H SANYO S s TOSHIBA 0 « NEC 0 iL HITACHI » ± il FUJITSU fâ T MATSUSHITA = * MITSUBISHI P - A ROHM 2SA 1865 H $ 2SA1832 2SA1832 2S31462 2S31462 2SA 1866 H # 2SA1832 2SA1832 2SB1462 2SB1462 2SA 1867 a i 2SA1745 2SA1745 2SA1588 2SA1588 2SB1475 2SB1475 2SB1219 2SB1219 2SA 1868 fé T 2SA1772 2SA1772 2SA1400-Z 2SA1400-Z 2SA1727 2SA1727 2SA 1 869 . S 3> 2SB1274 2SB1274 2SA1359 2SA1359 2SB1094 2SB1094 2SB941 2SB941 2SB1185 2SA 1873 SE S XP1401 XP1401 UMS1 2SA 1875 H » 2SA1400-Z 2SA1400-Z 2SA1868 2SA1868 2SA 1878 îïrlËTt; 2SB1454 2SB1454 2SB1381 2SB1381 2SA1650 2SA1650 2SB945 2SB945 2SA 1879 StSTÈ 2SB1455 2SB1455 2SB1021 2SB1021 ... | OCR Scan |
1 pages, |
1866 2SA1400-Z 2sa158 2SA1588 2sa1727 2SA1745 2SA1772 2SA1832 2SB1219 2SB1308 2SB1462 2SB1475 2sb941 nec 772 UMS1 2SA1832 abstract |
| Part | Manufacturer | Description | Shortform Datasheet | Ordering |
| Fairchild Part | Orderable | Industry Part | Manufacturer | Type | Family | Description |
| KSB1015 | KSB1015 Buy | 2SB1185 Buy | ROHM Co., LTD | Close | PowerBJT | PNP Epitaxial Silicon Transistor |
| KSB1366 | KSB1366 Buy | 2SB1185 Buy | ROHM Co., LTD | Close | PowerBJT | PNP Epitaxial Silicon Transistor |
| NTE Electronics Part | Industry Part |
| Part | Similar Part | Notes |
| 2SB1185 Buy | 2N4900 Buy | |
| 2SB1185 Buy | 2SA1012 Buy | |
| 2SB1185 Buy | 2SA1305 Buy | |
| 2SB1185 Buy | 2SA1307 Buy | |
| 2SB1185 Buy | 2SA1440 Buy | |
| 2SB1185 Buy | 2SA1469 Buy | |
| 2SB1185 Buy | 2SA1869 Buy | |
| 2SB1185 Buy | 2SB1071 Buy | |
| 2SB1185 Buy | 2SB1133 Buy | |
| 2SB1185 Buy | 2SB1274 Buy |