ENN2019A 2SB1124/2SD1624 2SB1124 2SD1624 O1003TN /92098HA /3307AT 10IB1 --10IB2 - Datasheet Archive

 

PNP/NPN Epitaxial Planar Silicon Transistors 2SB1124/2SD1624 High Current Switching Applications Applications Package Dimensions

 

Ordering number:ENN2019A ENN2019A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1124/2SD1624 2SB1124/2SD1624 High Current Switching Applications Applications Package Dimensions Æ Voltage regulators, relay drivers, lamp drivers, electrical equipment. unit:mm 2038A [2SB1124/2SD1624 2SB1124/2SD1624] Features 4.5 1.6 1.5 0.4 1.0 2.5 4.25max Æ Adoption of FBET, MBIT processes. Æ Low collector-to-emitter saturation voltage. Æ Fast switching speed. Æ Large current capacity and wide ASO. 0.5 3 2 1.5 1 0.4 3.0 1 : Base 2 : Collector 3 : Emitter SANYO : PCP (Bottom view) 0.75 ( ) : 2SB1124 2SB1124 Specifications Absolute Maximum Ratings at Ta = 25ßC Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (­)60 V Collector-to-Emitter Voltage VCEO (­)50 V Emitter-to-Base Voltage VEBO IC (­)6 V (­)3 A ICP (­)6 A 500 mW Collector Current Collector Current (Pulse) Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg Mounted on ceramic board (250mm2×0.8mm) 1.5 W 150 °C ­55 to +150 °C Electrical Characteristics at Ta = 25ßC Parameter Symbol Collector Cutoff Current ICBO Emitter Cutoff Current IEBO hFE1 hFE2 fT DC Current Gain Gain-Bandwidth Product Conditions VCB=(­)40V, IE=0 VEB=(­)4V, IC=0 VCE=(­)2V, IC=(­)100mA VCE=(­)2V, IC=(­)3A Ratings min Rank R S T U hFE 100 to 200 140 to 280 200 to 400 max Unit (­)1 100* µA (­)1 µA 560* 35 VCE=(­)10V, IC=(­)50mA * ; The 2SB1124/2SD1624 2SB1124/2SD1624 are classified by 100mA hFE as follows : typ Marking 2SB1124 2SB1124 : BG 2SD1624 2SD1624 : DG 150 MHz Continued on next page. 280 to 560 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN O1003TN O1003TN (KOTO)/92098HA /92098HA (KT)/3307AT /3307AT, TS No.2019-1/4 2SB1124/2SD1624 2SB1124/2SD1624 Continued from preceding page. Parameter Symbol Output Capacitance Cob Collector-to-Emitter Saturation Voltage min V(BR)EBO Storage Time Fall Time 0.5 V (­0.94) V (­)1.2 V (­)60 IE=(­)10µA, IC=0 V (­)50 V (­)6 V 70 ns 650 ns (450) ns 35 ns (35) See specified Test Circuit. ns (70) See specified Test Circuit. tf pF (­0.7) 0.19 See specified Test Circuit. tstg pF (­0.35) IC=(­)2A, IB=(­)100mA Emitter-to-Base Breakdown Voltage ton Unit 25 Collector-to-Emitter Breakdown Voltage Turn-ON Time max (39) VBE(sat) IC=(­)2A, IB=(­)100mA V(BR)CBO IC=(­)10µA, IE=0 V(BR)CEO IC=(­)1mA, RBE= Collector-to-Base Breakdown Voltage typ VCB=(­)10V, f=1MHz VCE(sat) Base-to-Emitter Saturation Voltage Ratings Conditions ns Switching Time Test Circuit PW=20µs D.C.1% INPUT IB1 RB IB2 VR OUTPUT 25 50 + 470µF + 100µF -5V 25V 10IB1 10IB1= -10IB2 -10IB2=IC=1A (For PNP, the polarity is reversed.) IC - VCE -5.0 mA -4.0 mA -100 -3.5 -50mA -3.0 -2.5 -20mA -2.0 -1.5 -10mA -1.0 -5mA A 100m 80mA 60mA 4.0 3.5 40mA 3.0 20mA 2.5 10mA 2.0 1.5 5mA 1.0 0.5 -0.5 IB=0 0 0 -0.4 -0.8 -1.2 0 -2.0 mA A Collector Current, IC - A -1.4 -6mA -1.2 -1.0 -4mA -0.8 -0.6 -2mA 1.6 2.0 7mA 1.6 6mA 1.4 5mA 1.2 4mA 1.0 3mA 0.8 0.6 -0.4 2mA 0.4 -0.2 ITR08908 ITR08908 2SD1624 2SD1624 8mA 1.8 -8mA 1.2 IC - VCE 2.0 -10mA -1.6 0.8 Collector-to-Emitter Voltage, VCE - V 2SB1124 2SB1124 -12m -14 -1.8 0.4 ITR08907 ITR08907 IC - VCE -2.0 IB=0 0 -1.6 Collector-to-Emitter Voltage, VCE - V Collector Current, IC - A 2SD1624 2SD1624 4.5 0 -20 Collector Current, IC - A Collector Current, IC - A -4.5 IC - VCE 5.0 2SB1124 2SB1124 0.2 1mA IB=0 0 0 -2 -4 -6 -8 -10 -12 -14 -16 Collector-to-Emitter Voltage, VCE - V IB=0 0 -18 -20 ITR08909 ITR08909 0 2 4 6 8 10 12 14 16 Collector-to-Emitter Voltage, VCE - V 18 20 ITR08910 ITR08910 No.2019-2/4 2SB1124/2SD1624 2SB1124/2SD1624 IC - VBE -3.2 -2.0 -1.6 -1.2 -0.8 2.0 1.6 1.2 0.8 0.4 0 0 0 -0.2 -0.4 -0.6 -0.8 -1.0 Base-to-Emitter Voltage, VBE - V -1.2 0.4 0.6 0.8 1.0 Base-to-Emitter Voltage, VBE - V 1.2 ITR08912 ITR08912 hFE - IC 2SD1624 2SD1624 VCE=2V 7 5 5 DC Current Gain, hFE Ta=75°C 3 25°C 2 -25°C 100 3 25°C Ta=75°C 2 -25°C 100 7 7 5 5 3 3 2 2 7 -0.01 2 3 5 7 -0.1 2 3 5 7 -1.0 2 Collector Current, IC - A 3 5 7 0.01 Output Capacitance, Cob - pF 3 2SD 162 4 2SB 1124 100 7 5 3 2 10 0.01 For PNP, minus sign is omitted. 2 3 5 2 0.1 3 5 1.0 2 Collector Current, IC - A 7 5 3 10 ITR08915 ITR08915 VCE(sat) - IC 3 5 7 1.0 3 2 -100 7 Ta= 25°C 3 - C 2 5° C 75° 2 -10 2 3 5 ITR08914 ITR08914 2 10 7 2SB1 124 2SD 162 4 5 3 2 For PNP, minus sign is omitted. 2 3 5 7 2 10 3 5 Collector-to-Base Voltage, VCB - V 7 100 ITR08916 ITR08916 VCE(sat) - IC 2SD1624 2SD1624 IC / IB=20 7 3 5 2 2SB1124 2SB1124 / 2SD1624 2SD1624 f=1MHz 1000 2SB1124 2SB1124 IC / IB=20 7 0.1 Cob - VCB 1.0 1.0 5 Collector-to-Emitter Saturation Voltage, VCE (sat) - mV -1000 5 5 5 2 3 Collector Current, IC - A 2SB1124 2SB1124 / 2SD1624 2SD1624 VCE=10V 7 2 ITR08913 ITR08913 f T - IC 1000 Gain-Bandwidth Product, fT - MHz 0.2 1000 2SB1124 2SB1124 VCE= -2V 7 0 ITR08911 ITR08911 hFE - IC 1000 DC Current Gain, hFE 2.4 Ta= 75° 25 °C C -25° C Collector Current, IC - A -2.4 -0.4 Collector-to-Emitter Saturation Voltage, VCE (sat) - mV 2SD1624 2SD1624 VCE=2V 2.8 Ta=7 5°C 25°C -25°C Collector Current, IC - A -2.8 IC - VBE 3.2 2SB1124 2SB1124 VCE= -2V 5 3 2 100 7 5 25°C C Ta=75° 3 2 -25°C 10 7 -0.01 2 3 5 7 -0.1 2 3 5 7 -1.0 Collector Current, IC - A 2 3 5 ITR08917 ITR08917 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 Collector Current, IC - A 2 3 5 ITR08918 ITR08918 No.2019-3/4 2SB1124/2SD1624 2SB1124/2SD1624 VBE(sat) - IC -10 Base-to-Emitter Saturation Voltage, VBE (sat) - V 5 3 2 -1.0 25°C -25°C 7 Ta=75°C 5 3 7 -0.01 2 3 5 7 -0.1 2 3 5 7 -1.0 Collector Current, IC - A 3 ICP=6A 5 DC op era 5 tio 3 n 2 0.1 5 3 2 Ta=25°C Single pulse Mounted on ceramic board(250mm2×0.8mm) For PNP, minus sign is omitted. 3 5 7 1.0 2 3 5 7 10 1.0 2 3 Collector-to-Emitter Voltage, VCE - V 25°C Ta= -25°C 7 75°C 5 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 ITR08920 ITR08920 PC - Ta 1.8 2SB1124 2SB1124 / 2SD1624 2SD1624 1.6 1.5 2 1.0 2 Collector Current, IC - A 1m 0m 10m s s s IC=3A 3 3 ITR08919 ITR08919 2SB1124 2SB1124 / 2SD1624 2SD1624 10 5 3 7 0.01 5 ASO 10 Collector Current, IC - A 2 2SD1624 2SD1624 IC / IB=20 7 Collector Dissipation, PC - W Base-to-Emitter Saturation Voltage, VBE (sat) - V 7 VBE(sat) - IC 10 2SB1124 2SB1124 IC / IB=20 M 1.4 ou nt 1.2 ed on ce ra 1.0 m ic bo ar 0.8 No h 25 0m m2 ×0 0.6 0.5 0.4 d( .8m eat s ink m ) 0.2 0 5 7 100 ITR08921 ITR08921 0 20 40 60 80 100 120 Ambient Temperature, Ta - ßC 140 160 ITR08922 ITR08922 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of October, 2003. Specifications and information herein are subject to change without notice. PS No.2019-4/4