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2SB1086 Datasheet

Part Manufacturer Description PDF Type
2SB1086 Continental Device India Semiconductor Device Data Book 1996 Scan
2SB1086 N/A Japanese Transistor Cross References (2S) Scan
2SB1086 N/A Cross Reference Datasheet Scan
2SB1086 N/A The Transistor Manual (Japanese) 1993 Scan
2SB1086 N/A Transistor Substitution Data Book 1993 Scan
2SB1086 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
2SB1086 N/A Shortform Data and Cross References (Misc Datasheets) Scan
2SB1086 ROHM CPT, TO-126, TO-126FP Transistors Scan
2SB1086 ROHM Low Freq. Power Amp. Epitaxial Planar PNP Silicon Transistor Scan
2SB1086 ROHM CPT / TO-126 / TO-126FP Transistors Scan
2SB1086A N/A The Transistor Manual (Japanese) 1993 Scan
2SB1086A N/A Transistor Substitution Data Book 1993 Scan
2SB1086A N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
2SB1086A N/A Shortform Data and Cross References (Misc Datasheets) Scan
2SB1086A ROHM Low Freq. Power Amp. Epitaxial Planar PNP Silicon Transistor Scan
2SB1086A ROHM CPT, TO-126, TO-126FP Transistors Scan
2SB1086A ROHM CPT / TO-126 / TO-126FP Transistors Scan

2SB1086

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: ROHM 2SA 512-' m S 2SA1358 2SA1096 2SB1086 2 SA 513 ^ JK S 2SA1358 2SA1096 2SA934 2SA 516 S S 2SA1358 2SA1096 2SB1086 2SA 516A Ã" S 2SA1358 2SB1086 2SA 517 Ã" S 2SA1015 , 546A fö T 2SB647 2SA1096A 2SB1041 2SA 547 fé T 2SB856 2SA748 2SB1086 2SA 547A fâ T 2SB856 2SB1086 2SA 548 â'ž S iL 2SA499 2SA673 2SA 549 0 iL 2SA499 2SA1309A -
OCR Scan
2SA933 2SA854 2SA1339 2SA1755 2SA935 2SA836 2sb560 2SA844 2SA1636
Abstract: Inchange Semiconductor Product Specification 2SB1086 Silicon PNP Power Transistors DESCRIPTION With TO-126 package Complement to type 2SD1563 Low collector saturation voltage Large current capability APPLICATIONS Designed for use in low frequency power amplifier applications PINNING PIN , TC=25 Inchange Semiconductor Product Specification 2SB1086 Silicon PNP Power Transistors , 2SB1086 Silicon PNP Power Transistors PACKAGE OUTLINE OND IC TOR UC SEM GE -
Original
Abstract: fö T 2SA836 2SA 646 = « 2SB1314 2SB1086 2SA 646 3 * 2SB1086 2SA 647 z » 2SB1086 2SA 648 a a 2SB775 2SA 649 0 a 2SB775 2SA 652 0 a (2SB514) 2SB1085 2SA 653 -
OCR Scan
2SA715 2SA699 2SA699A 2SA1018 2SA821 2SA1207 2s8698 2SA634A 2sB1064 2SA970 2SB632 2SB1064 2SA473 2SB631
Abstract: 2SA1515 2SA 510 - X 2 2SA1358 2SB1086 2SA 511 y' S 2 2SA1358 2SA1096 2SB1086 -
OCR Scan
2SA385 2SB1212 2SA933LN 2SA965 2SA675 sa1015 2SA985 NEC 2SA494 SA1015 2SB941 2SA940 2SB1186A
Abstract: JMnic Product Specification 2SB1086 Silicon PNP Power Transistors DESCRIPTION With TO-126 package Complement to type 2SD1563 Low collector saturation voltage Large current capability APPLICATIONS Designed for use in low frequency power amplifier applications PINNING PIN , Specification 2SB1086 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified , 2SB1086 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 JMnic JMnic
Original
Abstract: 2sb631 2sa815 2sa985 2sb647 2sa1110 2sb1086 2sb 528 - -. m 2sb631 2sa814 2sb546a 2sb647 2sa1110 2sb1086 2sb 529 â'ž = m 2sb632k 2sa473 2sb772 2sa7i5 2sb1435 2sb1314 2sb1009 2sb 530 s s 2sb557 2sb849 , 2sb1007 2sb 549 - B m 2sb631 2sb647 2sa794 2sb1086 2sb 550 - B 1 2sb633 2sb595 2sb859 2sb1293 -
OCR Scan
2SB415 sanyo 2sb509 NEC B 536 2sb631 hitachi 2SB557 TOSHIBA 2sa966
Abstract: ROHM CO LTD S "7 /"Transistors 40E D 7ÃEÃTi11] 000554S T E3 RHN 2SB1086 â'"â'"â'"â'" 7=32-/7 PNP ffilj®12jJg|§Jfl/Low Freq. Power Amp. Epitaxial Planar PNP Silicon Transistor â , fe 1 000 2SB1086 NPOR o â'¢ HSÃâîJ'fôtÃÃ"Ãg./Electrical Characteristic Curves Tûaani QoassMb 1 HRHH 2SB1086 - T-33-17 0 50 too 150 200 250 AMBIENT TEMPERATURE: Ta(C) Fig.1 flWIMÙÃl 2 , .6 248 noHm ROHM CO LTD - 40E » S 7020=1=1=1 000SS47 3 E3 RHM h "7 > V7, $ /Transistors 2SB1086 - -
OCR Scan
C80l 7-33-J7
Abstract: 2SB549 2SB1086 2SA 682 â'" Ã" S 2SB1144 2SA1358 2SB548 2SB647 2SA935 2SA 683 â'" fò T 2SB544 , 2SA817 2SA953 2SB647 2SA719 2SA1399 2SA935 2SA 698 = « 2SA1248 2SB1086 2SA 699- fâ t 2SB1142 -
OCR Scan
2SA1782 2SA720 2SA950 2SA930 2SA929 2SA984 sanyo 2SA705 2sa952 2SB507 2SB596 2SA985 2SB1033
Abstract: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1086 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -120V (Min) ·Wide Area of Safe Operation ·Complement to Type 2SD1563 APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL scs .i w PARAMETER w w VCBO Collector-Base , isc Silicon PNP Power Transistor 2SB1086 ELECTRICAL CHARACTERISTICS TC=25 unless otherwise INCHANGE Semiconductor
Original
Abstract: SavantIC Semiconductor Product Specification 2SB1086 Silicon PNP Power Transistors DESCRIPTION ·With TO-126 package ·Complement to type 2SD1563 ·Low collector saturation voltage ·Large current capability APPLICATIONS ·Designed for use in low frequency power amplifier applications , Semiconductor Product Specification 2SB1086 Silicon PNP Power Transistors CHARACTERISTICS Tj , .2 Outline dimensions 3 2SB1086 - -
Original
Abstract: - 48 - m s Type No. tt « Manuf. z ft SANYO Ã" 2 TOSHIBA B m NEC B ir HITACHI t ± il FUJITSU fé T MATSUSHITA H m MITSUBISHI â¡ - A BÃHM 2SB 605 - a 8 2SB764 2SA505 2SA673A 2SA684 2SA935 2SB 606 â'ž *±a 2SA879 2SB 608 a ir 2SB649 2SB1086A 2SB 612 a a 2SB817 2SB 616 , 2SB 626 fé T 2SB1372 2SB 628 â'ž a a 2SA1011 2SA940 2SB940 2SB1086A 2SB 630 a m 2SA968 2SB861 2SB 631 V H ft 2SA815 2SB549 2SB648 2SA387 2SB1086 2SB 631K = ft 2SB549 2SB1086 -
OCR Scan
2SA1783 2SB1371 2SA495 2SA1115 2SA1019 2SA1284 2sb641 IR 638 2SB175 2SA1115 F 2SB686 2SB859 2SB625 2SB776 2SB688 2SB626
Abstract: 2SA1220 2SA1111 2SB1086 2SB 877 b iL 2SA1507 2SA1021 2SA1220 2SA1111 2SB1086 2SB 878 b iL 2SA1507 2SA1195 2SB1086 2SB 879 b iL 2SA1507 2SA1195 2SB1086A 2SB 880 = m 2SB676 2SB601 2SB727 00 -
OCR Scan
2SB824 2SB703 2SB1334 2SB595 2SB703A 2SA1634 Nec K 872 2SA1184 2SB873 2SB1480 2SB1479 2SB1306 2SB942 2SB920
Abstract: io n s (U n it: mm) 2SB1086 2SB 1086 1) a B E t 'i.5 (B V c e o = -1 2 0 V )o 7 , 0 n o H m 259 h~ 7> y 7, $ / T ransistors 2SB1086 m ju -? 12 Type 2SB1086 hFE NPQR % 500 ( ) * · & f r 5í í t ll lS I 8 !/E le c tr¡c a l Characteristic Curves A , > £ r gf 4* i# & -w* m FI m Si H* 2SB1086 v^Asa-mc/) w '«> >J V ; V v l 1- r -
OCR Scan
1086 1
Abstract: ToshibaCorp :roshiba~rp 5 10 2SC522 2N1482 BDC01D 2SD381 2SD381 2SD381 2SD382 2SD382 2SB1086 2SB1086 , 2SC1448 KSC2073 2SC1669 2SC1669 2SC1669R 2SD1459Q 2SD1459R 2SC1669Y 2SD608 2SB1086A 2SB1086A 2SD1563A Advanced Semiconductor
Original
2SD608A nec 2sd381 TIP65 MJ4361 SD1478 2SD1080 2SD1562 2SD1763 2SD1953 40349L 40349S
Abstract: - 49 - s « Type No. a « Manuf. = ft sanyo toshiba b m. nec b iL hitachi « ± il Fujitsu fé t matsushita h £ mitsubishi â¡ - a rohm 2sb 648 b ±L 2sa1209 2sa1142 2sb 648a s ÃL 2 sa12 0 9 2sa818 2sa1142 2sa1284 2sb 649 s iL 2sa1220 2sb1086 2sb 649a s iL 2sa1011 2sa968 2sa1220a 2sb1086a 2sb 650 (h) s iL 2sb1031k 2sb 653a s iL 2sb558 2sb849 2sb 654a B iL 2sb849 2s8 655a a iL 2sb681 2sb 668 â'¢ fé T 2sb675 2sb765 00 2sb949 2sb1341 2sb 669 -
OCR Scan
2SB791 2SA818 2SB681 2SC4341 2SB849 2SB681 TOSHIBA 2SA1142
Abstract: 2SB1086 Transistors Si PNP Power BJT Military/High-RelN V(BR)CEO (V)120 V(BR)CBO (V) I(C) Max. (A)1.5 Absolute Max. Power Diss. (W)10 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition) h(FE) Min. Current gain.56 h(FE) Max. Current gain.390 @I(C) (A) (Test Condition) @V(CE) (V) (Test Condition) f(T) Min. (Hz) Transition Freq50M @I(C) (A) (Test Condition) @V(CE) (V) (Test Condition) t(d) Max. (s American Microsemiconductor
Original
Abstract: 2SB1064 2SA933S 2SB1086 2SB1086A 2SB1297 2SB768 2SA10S2 2SB1297 2SB1233 2SA1022 2SB1373 2SB1373 2SB1373 , ;¥ s a H. # 2SB774 2SB814 2SA795 2SA795 2SB902 2SA1399 2SA847A 2SA933 2SA1455K 2SB1086A 2SB1086A 2SA1235 -
OCR Scan
2SA1302 2SA1797 2SB1065 2SA812 2SA1424 2sa910 UPA75HA a 1232 nec Pa75ha 2SA1302 TOSHIBA 2SB1123 2SB986 2SA1705 2SA1249 2SA1768
Abstract: ROHM CO LTD I Tri MDE D 7fi20W GOOBSñt. 2 IRHM â'¢ TO-126, TO-126FP Types 7=32- 01 Type Function Vceo(V) lc Icwjw Pc(W)(Tc=25°) hfe TO-126 TO-126FP *Vc£r (A) (A) TO-126 JO-126FP Vce(V) lc(mA) 2SB1007 2SB1309 â'"80 -0.7 â'" 10 5 82-390 -3 -100 2SB1009 2SB1311 â'"32 -2 â'" 10 5 82-390 -5 -500 2SB1065 â'" -50 -3 â'" 10 â'" 56-390 -3 -500 2SB1086 â'" -120 -1.5 â'" 10 â'" 56-390 -5 -100 2SB1086A â'" -160 -1.5 â'" 10 â'" 56-270 -5 -100 2SD137B â'" Driver 80 0.7 â'" 10 â -
OCR Scan
2SD1380 2SD1968 2SB1423 2SC4198 2SD1379 2SD1637 2sc4137 TO126FP 2SA1775 2S02166 2SD1382 2SD1506 2SB1436
Abstract: Iv 7 > y ^ £ /Transistors 2SB1086 PNP v U n > h 7 > v 'X ^ 2 S B 1 0 8 6 I S J i i l f c l ^ M / L o w Freq. Power Amp. Epitaxial Planar PNP Silicon Transistor · \t ii0 /D im e n s io n s (Unit : mm) 1) 5 (B V c e o = - 1 2 0 V ) o 2) 3) 2 S D 1 5 6 3 t z i> y U T ' * 5 , 4) · Features W tt C7 # 5 c 1) High bre a kd o w n voltage: BV ceo = - , aI i d N t m a (Ü u r s ft IN* 2SB1086 S* tÜ g 4 J + ft -
OCR Scan
Abstract: 2SB1362 2SA 1110 , fé T 2SA1248 2SA1358 2SA1220 2SB1086 2SA 1111 , fé T 2SA1011 2SA1306 -
OCR Scan
2SA904A 2SA1038 2SA921 2SA999 2SA1016 2SA1306A 2SB737 2SA1104 2SA847 2SB922 2SB946 2SA985A 2SB1085A 2SB511 2SA562TM
Abstract: SOA. 3) C o m p lem entary pair with 2SB1086 ¡2.310.3 0.5 5 ± 0.1 ROHM : TO-126 4) Easy -
OCR Scan
2SB10
Abstract: Iv 7 > y ^ £ /Transistors 2SB1086 PNP v U n > h 7 > v 'X ^ 2 S B 1 0 8 6 I S J i i l f c l ^ M / L o w Freq. Power Amp. Epitaxial Planar PNP Silicon Transistor · \t ii0 /D im e n s io n s (Unit : mm) 1) 5 (B V c e o = - 1 2 0 V ) o 2) 3) 2 S D 1 5 6 3 t z i> y U T ' * 5 , 4) · Features W tt C7 # 5 c 1) High bre a kd o w n voltage: BV ceo = - , aI i d N t m a (Ü u r s ft IN* 2SB1086 S* tÜ g 4 J + ft -
OCR Scan
transistor jt
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