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2SB1085A Datasheet

Part Manufacturer Description PDF Type
2SB1085A N/A Japanese Transistor Cross References (2S) Scan
2SB1085A N/A The Transistor Manual (Japanese) 1993 Scan
2SB1085A N/A Transistor Substitution Data Book 1993 Scan
2SB1085A N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
2SB1085A N/A Shortform Data and Cross References (Misc Datasheets) Scan
2SB1085A ROHM TO-220, TO-220FP, TO-220FN, HRT Transistors Scan
2SB1085A ROHM Epitaxial Planar PNP Silicon Transistor Scan

2SB1085A

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: SavantIC Semiconductor Product Specification 2SB1085A Silicon PNP Power Transistors DESCRIPTION ·With TO-220 package ·Complement to type 2SD1562A ·Low collector saturation voltage APPLICATIONS ·Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION , =25 SavantIC Semiconductor Product Specification 2SB1085A Silicon PNP Power Transistors , tolerance:±0.10 mm) 3 2SB1085A - -
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Abstract: 2SB1085A 2SA1038 2SA1038 2SAI482 2SA1515 2SA1515 2SA935 2SB1085A 2SB1085B 2SB1065 2SB1065 2SB1212 2SB1010 2SB1085A 2SB1085A 2SA1038 2SA933 *± JS Ä jfc X K V- B B b S 2 3£ $ - -· « S m B 2SA 954 -
OCR Scan
2SA930 2SA1015 2SA872 2SA999L 2SB564A 2SA992 2sa850 2sa1047 2sa9630 2SA931 2SA932 2SA929
Abstract: h ~p > y X £ /T ra n s is to rs 2SB1085A 9 C D 4 0 8 5 A I ^ + '> 7 ^ 7 p U - ^ P N P y 'J = i > h 7 > y ^ ^ Epitaxial Planar PNP Silicon Transistor filÜ S ^ ^ lS 'U ffl/L o w Freq. Power Amp. · W Ï& r j- ^ i a / D im e n s i o n s (Unit : mm) 1) S W E E T ' * * (B V Ce o = - 1 6 0 V ) o 2) S O A 43.6 10 .2 1 0 .0 10 .3 4.51 0.2 r i 3) fT* ' " * < , C o b , n s is to rs · mm& (0 : m m m a) A jU '? ie Type 2SB1085A hFE DE 2SB1085A % 500 o M tm -
OCR Scan
SC-46
Abstract: - 22 - m s Type No. tt S Manuf. = if SANYO X S TOSHIBA 0 a NEC B ïr HITACHI » ± a FUJITSU fé T MATSUSHITA H m MITSUBISHI â¡ â'" A BÃHM 2SA 1077 - *±a 2SB922 2SA1302 2SB946 2SA 1 078 ^ *±a 2SB920 2SA968 2SA985 2SB940 2SB1085 2SA 1079 «±a 2SA985A 2SB1085A 2SA 1080 . *±a 2SB511 2SA562TM 2SB536 2SB1085 2SA 1081 _ a ïr 2SA1207 2SA970 2SA988 2SB726 2SA904A 2SA1038 2SA , 2SB1085A 2SA 1112 . fé T 2SA1011 2SA1306A 2SA 1113 H m 2SA1237 2SA 1114 - E. S 2SA1450 -
OCR Scan
2SA921 2SA999 2SA1016 2SA1018 2SB737 2SA1310 2SB873 2SA1104 2SA847 2SA1120 2SA1783 2SA991 2SB725
Abstract: JMnic Product Specification 2SB1085A Silicon PNP Power Transistors DESCRIPTION With TO-220 package Complement to type 2SD1562A Low collector saturation voltage APPLICATIONS Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 , =25 JMnic Product Specification 2SB1085A Silicon PNP Power Transistors CHARACTERISTICS Tj , TYP. 60 MAX UNIT 200 JMnic Product Specification 2SB1085A Silicon PNP Power JMnic
Original
Abstract: Inchange Semiconductor Product Specification 2SB1085A Silicon PNP Power Transistors DESCRIPTION With TO-220 package Complement to type 2SD1562A Low collector saturation voltage APPLICATIONS Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION 1 , 2SB1085A Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL , UNIT 200 30 pF 50 MHz Inchange Semiconductor Product Specification 2SB1085A -
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Abstract: flâ'˜Ã® c n QOOSS43 b S R H M h 7 > y ' 7 ^ / T ransistors â'¢ M U (Q . 2SB1085A q . T -3 3 -1 9 h u -i Y2 13 # Type hFE 200 2SB1085A DE O â'¢ H lx à , » ft ORHM â'¢w I l f 4Ì s 2SB1085A s if f I CO CO -
OCR Scan
B1085A
Abstract: 2SB861 2SA794 2SB1085A 2SA 775A B i 2SB511 2SA814 2SB861 2SA794A 2SB1085A 2SA 776 ä s 2SA929 -
OCR Scan
2SB548 2SA715 2SB1043 2SA748 2SB1064 2SA673A 2SB927 2SA757B 2SB596 2SA1705 2SA684 2SB817
Abstract: 0 a (2SB514) 2SB1085A 2SA 653A 0 a 2SB1085A 2SA 656 K £ 2SA656A 2SB849 2SA -
OCR Scan
2SA699 2SA699A 2SB1187 2SA821 2SA778 2SA836 2s8698 2SA634A 2SA854 2SA984 2SB632 2SA473 2SB631 2SB824
Abstract: /Transistors 2SD1562A 2SD1562A â'¢ ftft 1 (BVceo=160V)o 2) ASOA*j£^0 3)fTAff* 7& £ 0 â'¢ Features 1) High breakdown voltage: BVCeo^160V 2) Wide ASO. 3) High transition frequency (fT), and low output capacitance (C0t>) 4) Complementary pair with 2SB1085A teMl&WJlM^WLovi Freq. Power Amp. Epitaxial Planar NPN Silicon Transistor â'¢ -tf&H/Dimensions (Unit: mm) ¡43.6+0.2 10.0±0.3 TO-220 D. 45+0.1-4â'"|â'"â'" 2.6 (1) Base (2) Collector (3) Emitter â'¢ Iftftli^Stà -
OCR Scan
TRANSISTOR 10003 10003 NPN hFE-200 to-220 npn npn 10003
Abstract: S "7 > v 7, £ /Transistors PNP '> ';= !> Freq. Power Amp. Epitaxial Planar PNP Silicon Transistor · &M : · i>|.JfiT|-;£|I]/Dim ensions (U n it: mm) 2SB1085A 1) 3 ) W l i 7 i . 5 (BVC e o = - 1 60V )o < , C o b A ^ J ^ l ' o 2) A S O A 'l l 'o 4) 2 S D 1 5 6 2 A t = J > y j T i > 5 o · F eatures 1) High b reakdow n voltage: BVCeo = -160V 2) W id e ASO. 3) High transition , /'Transistors 2SB1085A ^ A N ìM E C /jro COLLECTO R TRANSITIO N F R E Q U E N C Y ! ît IM H z -
OCR Scan
Abstract: S "7 > y £ /Transistors 2SB1085A OOR1 OA5A W fiJI^i^ÃIffl/LowFreq. Power Amp. 1) ¡â'¢Â¡Â¡HE 7 $>3 (BVCeo=â'"160V)o 2) 3)Wil5yiJt;S)-5o â'¢ Features 1) High breakdown voltage: BVCeo=-160V 2) Wide ASO. 3) High transition frequency and small output capacitance. 4) Complementary pair with 2SD1562A. Epitaxial Planar PNP Silicon Transistor â'¢ ii-Jfi-^-jiH/Dimensions (Unit: mm) TO-220 â'¢ jéÃÃÃI^Sûtè/Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits -
OCR Scan
Abstract: 60 320 -5 -0.1 -2 -1.5 -1 -0.1 2SB1085A â¡ â'"A LF PA -160 -160 -1.5 20 -1 -120 60 200 -5 -0.1 -2 , * 2SD1562 T0-220ABE BCE 2SB1085 50* -5 -0. 1 30* 2SD1562A T0-220ABIÃ BCE 2SB1085A 50* -5 -0.1 -
OCR Scan
2SB1072L 2SB1072S 2SB1073 2SB1075 2SB1076M 2SB1077 2SB1099 2SD1491 2SB1100 2SB1103 MP-45 2SB1086A
Abstract: 2SB1314 2SB1064 2SA 739 â'"' i tJ jul 2SA1822 2SA 740 JK 2 2SA940 2SB546 2SB941 2SB1085A 2SA -
OCR Scan
2SA1127 2SA720 2SA1005 2SA1309A 2SA1031 2SA1032 2sa726 2SA934 2SA1115 2SA1768 2SA830 2SB1142 2SB772 2SB1009 2SB764
Abstract: 2SB94Û 2SB1085A 2SB 720 - B iL 2SA1011 2SA968 2SB546A 2SB940 2SB1085B 2SB 721 B iL 2SB698 2SA950 -
OCR Scan
2SA952 2SB755 2SA1232 2SB756 2SA1181 2SAB12 toshiba 2SB755 2SB681 TOSHIBA 2SB700b 2SB681 2SB561 2SA719 2SA1398
Abstract: - 20 - m « Type So. a s Manuf. = » SANYO 3E 2 TOSHIBA 0 ^ SEC S il HITACHI » ± a FUJITSU « T MATSUSHITA H * MITSUBISHI â¡ - A ROHM 2 SA 1 006 A B 2SA1011 2SAÌ3Q6B 2SB940A 2SB1085B 2SA 1006B s a 2SA1306B 2SA 1 007 â'ž s m 2SB817 2SA 1008 , s n 2SA1011 2SB940 2SB1085 2SA 1010 0 m 2SB921 2SB946A 2SA 1011 â'ž = & 2SB1085A 2SA 1012 , 36 2 2SB824 2SA1069 2SB566 0Q 233945 2SB1291 2SA 1013 ' * S 2SA1770 2SA1111 2SB1212 2SA 1014 - X S 2 SA 1011 2SA1195 -
OCR Scan
2SB646 2SA1039 2SA1318 2SA987 2sa733 2SA1026 2sa 1023 2SA733 2SA844 1016K 2SA949 2SA1624
Abstract: 2SA1011 2SA1306 2SA1111 2SB1085 2SA 985A 0 a 2SA1011 2SA1306A 2SA1111 2SB1085A 2SA 986 râ -
OCR Scan
2SA1142 2SB648 2SA1285 2SA978 2SA933 R 2SA989 2SA984 sanyo 2SA1177 2SA1030 2SA1209 2SA1352 2SA990
Abstract: 2SB1085A 2SA 913A IS T 2SA1306A 2SA1112 2SB1085B 2SA 914 te t 2SA1209 2SA1091 2SA1142 2SB649A -
OCR Scan
2SA838 2SA564A 2SA906 2SA10 2SA120 2sa912 2SB675 2SB727 2SB1339 SA1127 2SB598 2SB564
Abstract: - 23 - m « Type No. a s Manuf. -E * SANYO M S TOSHIBA a a NEC B iL HITACHI « ± ii FUJITSU fé T MATSUSHITA H * MITSUBISHI â¡ â'" A ROHM 2SA 1124 »" fé T 2SA1208 2SA1320 2SA1482 2SA 1125 . të T 2SA1360 2SA914 2 SA 1127- fé T 2SA1783 2SA101S 2SA933LN 2SA 1128 fé T 2SB698 2SA562TM 2SA854 2SA 1129 B a 2SB919 2SB1018 2SB925 2SA 1133 â'ž fé T 2SB940 2SB1085A 2SA 1133A fé f 2SAS4Û ZÃ'/UUUO ¿0ÃÃD1 ¿SB340A 2SA 1135. 2SB921L 2SB754 2SB812A -
OCR Scan
2SA1638 2SA1284 2sa977 2SA1159 Toshiba 2SB754 2SA1191 2SA1123 2SB776 2SA1265N 2SB1154 2SA1633
Abstract: 2sb861 2sb1085a 2sb 547 , h « 2sa816 2sb861 2sb1186a 2sb 548 â'¢ h m 2sb631 2sb647 2sa794 -
OCR Scan
2SB415 sanyo 2sb509 NEC B 536 2sb631 hitachi 2SB557 TOSHIBA 2sa966
Abstract: F ~7 > V 7 s / I ransistors 2SD1562A 2SD1562A NPN y ' J 3 > h 7 > y * $ Freq. P ow er Amp. Epitaxial Planar NPN Silicon Transistor 1) IB ffT S 5 (B V Ce o = 1 6 0 V ) o 2) ASCW/a I ' o 3} tT ^F r^j^ , 4) 2S B 1085A t 3 > 7 ' J f * 5 o â'¢ Features 1) High breakdown voltage: B V Ce o = 1 6 0 V 2) Wide ASO. 3) High transition frequency (fT), and low output capacitance (Coe) 4) Complementary pair with 2SB1085A â'¢ J fiftllit/E lte /A b s 011116 Maximum Ratings -
OCR Scan
Abstract: ^ 2 S B Ï3 6 9 2SB1064 2SB1085 2SB1085A 2SB1289 2SB1291 2SB1293 2SB1334 2SB1334A 2SC4007 2SD 2023 -
OCR Scan
2SC457 B1335A D2033A D1855A D2037 B1186A TQ-220 2SC4505 2SC4354 2SD2061 2SB1496
Abstract: 60 320 -5 -0.1 -2 -1.5 -1 -0.1 2SB1085A â¡ â'"A LF PA -160 -160 -1.5 20 -1 -120 60 200 -5 -0.1 -2 , * 2SD1562 T0-220ABE BCE 2SB1085 50* -5 -0. 1 30* 2SD1562A T0-220ABIÃ BCE 2SB1085A 50* -5 -0.1 -
OCR Scan
2SB966 2SB967 2SB968 2SB970 2SB973 2SB974 2sd1589 2SD1407 T0-220ABS 2SB976 2SB977 2SB977A
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