2SB1073 SJC00068DED - Datasheet Archive

 

2SB1073 Silicon PNP epitaxial planar type Unit: mm For low-frequency amplification 4.5±0.1 1.6±0.2 1

 

Transistors 2SB1073 2SB1073 Silicon PNP epitaxial planar type Unit: mm For low-frequency amplification 4.5±0.1 1.6±0.2 1 0.4±0.08 3 2 0.5±0.08 1.0+0.1 ­0.2 · Low collector-emitter saturation voltage VCE(sat) · Large peak collector current ICP · Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 3° 4.0+0.25 ­0.20 Features 1.5±0.1 Rating VCBO -30 V Collector-emitter voltage (Base open) VCEO -20 V Emitter-base voltage (Collector open) VEBO -7 V IC -4 A ICP -7 A PC 1 3.0±0.15 Unit Collector-base voltage (Emitter open) 45° 0.4 max. 2.6±0.1 Symbol 0.4±0.04 3° Absolute Maximum Ratings Ta = 25°C Parameter 2.5±0.1 1.5±0.1 W Collector current Peak collector current Collector power dissipation * Junction temperature Tj 150 Tstg -55 to +150 Marking Symbol: I °C Storage temperature 1: Base 2: Collector 3: Emitter MiniP3-F1 Package °C cm2 Note) *: Print circuit board: Copper foil area of 1 or more, and the board thickness of 1.7 mm for the collector portion Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emiter open) VCBO IC = -10 µA, IE = 0 -30 V Collector-emitter voltage (Base open) VCEO IC = -1 mA, IB = 0 -20 V Emiter-base voltage (Collector open) VEBO IE = -10 µA, IC = 0 -7 Collector-base cutoff current (Emitter open) ICBO VCB = -30 V, IE = 0 Emitter-base cutoff current (Collector open) IEBO VEB = -7 V, IC = 0 Forward current transfer ratio *1, 2 hFE VCE = -2 V, IC = -2 A VCE(sat) IC = -3 A, IB = - 0.1 A - 0.6 VCB = -6 V, IE = 50 mA, f = 200 MHz 120 MHz VCB = -20 V, IE = 0, f = 1 MHz 40 pF Collector-emitter saturation voltage *1 Transition frequency fT Collector output capacitance (Common base, input open circuited) Cob V - 0.1 - 0.1 µA 315 120 µA -1.0 V Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Pulse measurement *2: Rank classification Rank Q R hFE 120 to 205 180 to 315 Publication date: March 2004 SJC00068DED SJC00068DED 1 2SB1073 2SB1073 PC Ta IC VCE -180 µA -160 µA -140 µA -120 µA - 0.6 0.8 0.6 -100 µA - 0.4 0.4 -80 µA -60 µA -40 µA - 0.2 0.2 25°C Ta = 75°C -6 -25°C -4 -2 20 40 60 0 80 100 120 140 160 -2 0 -4 -10 - 0.001 - 0.01 IC / IB = 30 Ta = 75°C 25°C -25°C - 0.1 -1 Collector current IC (A) -10 0 -12 0 -10 300 200 VCE = -2 V Ta = 75°C 25°C -25°C 100 0 - 0.01 - 0.1 -1 Collector current IC (A) SJC00068DED SJC00068DED - 0.8 -1.2 -1.6 -2.0 Cob VCB 500 400 - 0.4 Base-emitter voltage VBE (V) hFE IC 600 Forward current transfer ratio hFE - 0.01 -8 Collector-emitter voltage VCE (V) -1 - 0.1 -6 -10 Collector output capacitance C (pF) (Common base, input open circuited) ob 0 VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) -8 -20 µA Ambient temperature Ta (°C) 2 Collector current IC (A) IB = -200 µA - 0.8 1.0 VCE = -2 V -10 -1.0 1.2 0 -12 Ta = 25°C Collector current IC (A) Collector power dissipation PC (W) Copper plate at the collector is more than 1 cm2 in area, 1.7 mm in thickness. 1.4 IC VBE -1.2 1.6 120 IE = 0 f = 1 MHz Ta = 25°C 100 80 60 40 20 0 -1 -10 -100 Collector-base voltage VCB (V) Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical information as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: · Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. · Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2003 SEP