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2SB1065 Datasheet

Part Manufacturer Description PDF Type
2SB1065 Continental Device India Semiconductor Device Data Book 1996 Scan
2SB1065 N/A The Transistor Manual (Japanese) 1993 Scan
2SB1065 N/A Transistor Substitution Data Book 1993 Scan
2SB1065 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
2SB1065 N/A Shortform Data and Cross References (Misc Datasheets) Scan
2SB1065 N/A Japanese Transistor Cross References (2S) Scan
2SB1065 N/A Cross Reference Datasheet Scan
2SB1065 ROHM CPT, TO-126, TO-126FP Transistors Scan
2SB1065 ROHM Epitaxial Planar PNP Silicon Transistor Scan
2SB1065 ROHM CPT / TO-126 / TO-126FP Transistors Scan

2SB1065

Catalog Datasheet MFG & Type PDF Document Tags

2SB1065

Abstract: 2SD1506 SavantIC Semiconductor Product Specification 2SB1065 Silicon PNP Power Transistors DESCRIPTION ·With TO-126 package ·Complement to type 2SD1506 ·Low collector saturation voltage APPLICATIONS ·For use in low frequency power amplifier applications PINNING PIN DESCRIPTION 1 , Storage temperature -55~150 TC=25 SavantIC Semiconductor Product Specification 2SB1065 , PACKAGE OUTLINE Fig.2 Outline dimensions 3 2SB1065 -
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Original

2SB1065

Abstract: 2SD1506 N "7 > V X $ /Transistors 2SB1065 2SB1065 1) VCe (sat )=â'"0.5V (Typ.) at Ic/Ib=-2A/-0.2A 2) ASOMkXffimK&Oo 3) 2SD1506£ U > yj T'&Zo 4) Itif®BtTSSo â'¢ Features 1) Low collector saturation voltage: VcE(sat)=-0.5V(Typ.)lc/lB=2A/-0.2A 2) ASO is wide and highly resistant to breakdown. 3) Complementary pair with 2SD1506. 4) Easily mounted in radiator. â'¢ teMMk-kfete/Absolute Maximum Ratings (Ta , Type hFE 1 000 2SB1065 NPQR o 232 i\OHm
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OCR Scan
2SB106

2SB1065

Abstract: h 7 > y X ^ t /Transistors PNP by>v*$ Freq. Power Amp. Epitaxial Planar PNP Silicon Transistor · · W f iT t ii H / D i m e n s io n s ( U n it : mm) 2SB1065 1) VCE ( sat]=-0-5V (Typ.) at Ic / I b = - 2 A / - 0 . 2 A 2) 3) 2SD1506 4) jf tf & fl'v $!# T'tbZo tf'& W b l z ? $ Z o , , ,A V > C D C /)r-o \fr >J V : V v J l- 7 - Is ~ P £ /Transistors 2SB1065
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OCR Scan

2SB1065

Abstract: 2SD1506 Inchange Semiconductor Product Specification 2SB1065 Silicon PNP Power Transistors DESCRIPTION With TO-126 package Complement to type 2SD1506 Low collector saturation voltage APPLICATIONS For use in low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter , Semiconductor Product Specification 2SB1065 Silicon PNP Power Transistors CHARACTERISTICS Tj , 50 pF 70 MHz Inchange Semiconductor Product Specification 2SB1065 Silicon PNP
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Original

2SB1065

Abstract: 2SD1506 JMnic Product Specification 2SB1065 Silicon PNP Power Transistors DESCRIPTION With TO-126 package Complement to type 2SD1506 Low collector saturation voltage APPLICATIONS For use in low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 , ~150 TC=25 JMnic Product Specification 2SB1065 Silicon PNP Power Transistors , Specification 2SB1065 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3
JMnic
Original

761b nec

Abstract: 2SB1010 2SB632 2SA715 2SB1065 2SB 743 B W 2SB1142 2SA715 2SB1065 2SB 744 b a 2SB986 2SA715 2SB1065 2SB 745 fé T 2SA930 2SA1031 2SA999L 2SA937 2SB 745A fé t 2SA937 2SB 746 b a 2SB698
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OCR Scan
2SB927 2SB1010 2SA684 2SA966 2SA817 2SB1043 761b nec 2sb1041 761a 2sa684 nec 2SB737 2SB739 2SA1705 2SB740

B1065

Abstract: 2SB1065 h ~7 > v ^ 2 /T r a n s is to r s 2SB1065 PNP y >J - 1> Epitaxial Planar PNP Silicon Transistor Freq. Power Amp. · fl.)ß -+;±@ /D im en sio ns (Unit : mm) 7.810.2 r 2SB1065 · oe* 1 ) VcE(sat) A ''1ÈV,'a V c E ( s a l ) = - 0.5V(Typ.) (Ic /I b = - 2 A / - 0 . 2 A ) ^ 2.5 ±0.2 r 1 , 3 t £ fli# t 4 f f lil/E le c t r ic a l Characteristic Curves 2SB1065 ,± ' 1mm (7) 7)1 , * > I m ! u r m Ni 2SB1065 4* Î* s m 5ï 4Î+ ¡3
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OCR Scan
B1065 d1506

jd 1803

Abstract: 2SD150 ROHM CO LTD MOE D 7020^ 0005530 ö B9RHH /Transistors I t P N P y 15;ü;JÎ!ii^iBlÜ Æ/Low Freq. Power Amp. Epitaxial Planar PNP Silicon Transistor · ^ f f ^ jiS / D im e n s io n s (Unit : mm) 1) V c e ( sat) = -0 .5 V (Typ.) ¿ i f t t ' o at !c / I b = - 2 A / - 0 . 2 A 2SB1065 , -. mmms,) 5 6 -1 2 0 8 2 -1 8 0 1B^ Type 2SB1065 hFE NPQR 1 000 O 232 ROHm rr zo Vil , 1 ÖRHM 2SB1065
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OCR Scan
jd 1803 2SD150 000S532

2SB1065

Abstract: 2SD1506 isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1065 DESCRIPTION · ·Low Collector Saturation Voltage : VCE(sat)= -0.5V(Max)@IC= -2A ·Wide Area of Safe Operation ·Complement to Type 2SD1506 APPLICATIONS ·Designed for low frequency power amplifier applications. .cn mi e ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER scs .i VALUE ww , Semiconductor isc Silicon PNP Power Transistor 2SB1065 ELECTRICAL CHARACTERISTICS TC=25 unless
INCHANGE Semiconductor
Original

2sa850

Abstract: 2sa1047 2SB1085A 2SA1038 2SA1038 2SAI482 2SA1515 2SA1515 2SA935 2SB1085A 2SB1085B 2SB1065 2SB1065 2SB1212 2SB1010
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OCR Scan
2SA1015 2SA872 2SB564A 2SA968 2SA992 2SA987 2sa850 2sa1047 2sa9630 2SA931 2SA932 2SA933 2SA929

2sc4137

Abstract: TO126FP ROHM CO LTD I Tri MDE D 7fi20W GOOBSñt. 2 IRHM â'¢ TO-126, TO-126FP Types 7=32- 01 Type Function Vceo(V) lc Icwjw Pc(W)(Tc=25°) hfe TO-126 TO-126FP *Vc£r (A) (A) TO-126 JO-126FP Vce(V) lc(mA) 2SB1007 2SB1309 â'"80 -0.7 â'" 10 5 82-390 -3 -100 2SB1009 2SB1311 â'"32 -2 â'" 10 5 82-390 -5 -500 2SB1065 â'" -50 -3 â'" 10 â'" 56-390 -3 -500 2SB1086 â'" -120 -1.5 â'" 10 â'" 56-390 -5 -100 2SB1086A â'" -160 -1.5 â'" 10 â'" 56-270 -5 -100 2SD137B â'" Driver 80 0.7 â'" 10 â
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OCR Scan
2SD1380 2SD1968 2SD1563A 2SB1423 2SC4198 2SD1379 2sc4137 TO126FP 2SA1775 to-126fp 2SD1382 2SD1563

E05A

Abstract: 2SD1506 h > V X $ /Transistors 2SD1506 2SD1506 1) VCE(sat)=0.5V(Typ.) (at Ic/Ib=2A/0.2A) 2) 3) 2SB1065 ¿zlVyjT ¿fe-So I Features I) Low collector saturation voltage: VCE(sat)=0.5V (Typ.) lc/iB=2A/0.2A I) ASO is wide and resistant to breakdown. \) Complementary pair with 2SB1065. I) Easy installation into radiators. fiiliM^^ffiffl/Low Freq. Power Amp. Epitaxial Planar NPN Silicon Transistor â'¢ W^Tf&HI/Dimensions (Unit: mm) 2.32.3 (1) (2) (3) TO-126 (1) Emitter (2) Collector (3) Base â
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OCR Scan
E05A

2SB1039

Abstract: 2SB1045 -40 60 320 -3 -0.5 -1 -1. 5 -2 -0.2 2SB1065 u â'" A LF PA -60 -50 -3 10 -1 -40 56 390 -3 -0.5 -1 -1. , * 2SD1505 TO-220AB® BCE 2SB1064 70* -5 -0. 5 50* 2SD1506 (TOâ'"126) ECB 2SB1065 70* -5 -0. 5
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OCR Scan
2SB1028 2SB1030 2SB1030A 2SB1031K 2SB1032K 2SB1033 2SB1039 2SB1045 2SB1038

2SB737

Abstract: 2SA1038 2SB1142 2SB744 2SB874 2SB1065 2 SA 1096A fé T 2SB744A 2SB874 2SA 1100 = m 2SA1783 2SA999
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OCR Scan
2SA970 2SA988 2SA991 2SA1016 2SA1018 2SA1177 2SB873 2SA1104 2SA847 2SA1015 ba 2SA1232 2SB922 2SA1302 2SB946 2SB920 2SA985 2SB940

2SB596

Abstract: 2SB686 2SB1H2 2SBU02 2SB1415 2SB1314 2SB1065 2SB 773 b m. 2SB776 2SB 773A 0 m 2SB776 2SB1054
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OCR Scan
2SB824 2SB596 2SB703 2SB1334 2SA1634 2SB595 2SB686 2sb773 2SB773A 2SB1371 2SB859 2SB942

2SD1506

Abstract: 2SB1065 SavantIC Semiconductor Product Specification 2SD1506 Silicon NPN Power Transistors DESCRIPTION ·With TO-126 package ·Complement to type 2SB1065 ·Low collector saturation voltage APPLICATIONS ·For use in low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter
-
Original

2SD1506

Abstract: 2SB1065 Inchange Semiconductor Product Specification 2SD1506 Silicon NPN Power Transistors · DESCRIPTION ·With TO-126 package ·Complement to type 2SB1065 ·Low collector saturation voltage APPLICATIONS ·For use in low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter
-
Original

2S897

Abstract: 2SA1178 - 66 - m « Type No. tt S Manuf. H m SANYO Ã" S TOSHIBA B m HEC B ïr HITACHI « ± a FUJITSU Ãí} T MATSUSHITA H m MITSUBISHI â¡ - A ROHM 2 SB 1216 H m 2SA1647 2SB930A 2 SB 1217 a m 2SB986 2SA1359 2SA1096 2SB1065 2SB 1218 85 T 2SA1622 2SA1586 2SA1628 2SB1218A 2SA1603 2SA1576 2SB 1218A fö t 2SA1586 2SA1603 2SA1576 2SB 1219 ^ ts T 2SA1745 2SA1588 2SA1577 2SB 1219A fö T 2SA1588 2SA1577 2SB 1220 ta t 2SA1587 ¿ortl57¡i 2SB 1221 ta t 2SA1371
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OCR Scan
2SA1770 2SA1283 2SA879 2SA1243 2SA1225 2SA1178 2S897 2SA1321 2SC3269 2SA1607 2SA1162 2SA1637 2SB1024

2sa910

Abstract: UPA75HA MATSUSHITA 2SA1605 2SA1309A ZSA886 = m MITSUBISHI - A KOHM 2SA1364 2SB744A 2SA1797 2SB1065
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OCR Scan
2SB1123 2SB817 2SB648 2SA812 2SA1424 2SA1235 2sa910 UPA75HA a 1232 nec Pa75ha 2SA1302 TOSHIBA 2SA1249 2SA1768 2SA1552 2SA1256

2SA490-0

Abstract: 2SA699A matsua IOB434 2SB434R 2SB503A-O 2SB1065 2SB1065 2SB856 2SB1064 2SB1064 ~B1l85 35 - 40 40 40 40 40
Advanced Semiconductor
Original
MJE2491 MJ2253 2SA490-0 2SA699A matsua B0934 MJE2370 2SB434G-0 2SB4340 2SB1066M 2SB503A-Y 2SB1202 2SB434Y

2SA1146

Abstract: 2SB1200 2SB1085A 2SA1038 2SA1038 2SAI482 2SA1515 2SA1515 2SA935 2SB1085A 2SB1085B 2SB1065 2SB1065 2SB1212 2SB1010
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OCR Scan
2SB764 2SB605 2SB793 2SA1200 2SA1173 2SB1200 2SA1146 2SA874 2SA1Q20 2SA683 2SA1415

2SC2030

Abstract: OTB-122 2SB1H2 2SBU02 2SB1415 2SB1314 2SB1065 2SB 773 b m. 2SB776 2SB 773A 0 m 2SB776 2SB1054
-
OCR Scan
2SC2030 OTB-122 28C32 DTD143EF BUK 155 DTD114EF 2SA785 2SA790 2SA802 2SA805 2SA806 2SA881
Showing first 20 results.