500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Search Stock

Shift+Click on the column header for multi-column sorting 
Part
Manufacturer
Supplier
Stock
Best Price
Price Each
Ordering
Part : 2SB10630P Supplier : Panasonic Electronic Components Manufacturer : Ameya Holding Stock : - Best Price : - Price Each : -
Shipping cost not included. Currency conversions are estimated. 

2SB1063 Datasheet

Part Manufacturer Description PDF Type
2SB1063 Panasonic High Power Amplifier Complementary Pair with 2SD1499 Original
2SB1063 N/A Japanese Transistor Cross References (2S) Scan
2SB1063 N/A Cross Reference Datasheet Scan
2SB1063 N/A The Transistor Manual (Japanese) 1993 Scan
2SB1063 N/A Scan
2SB1063 N/A Transistor Substitution Data Book 1993 Scan
2SB1063 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
2SB1063 N/A Shortform Data and Cross References (Misc Datasheets) Scan
2SB1063 Panasonic Silicon Medium Power Transistors Scan
2SB1063 Panasonic Power Transistors Scan
2SB10630P Panasonic Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS PNP 100VCEO 5A TO-220F Original
2SB1063P Panasonic Silicon PNP Triple Diffusion Planar Type Power Transistor Original
2SB1063Q Panasonic Silicon PNP Triple Diffusion Planar Type Power Transistor Original
2SB1063R Panasonic Silicon PNP Triple Diffusion Planar Type Power Transistor Original

2SB1063

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: Inchange Semiconductor Product Specification 2SB1063 Silicon PNP Power Transistors DESCRIPTION With TO-220Fa package Complement to type 2SD1499 Wide area of safe operation High fT APPLICATIONS For high power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 , Product Specification 2SB1063 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise , Semiconductor Product Specification 2SB1063 Silicon PNP Power Transistors PACKAGE OUTLINE -
Original
Abstract: JMnic Product Specification 2SB1063 Silicon PNP Power Transistors DESCRIPTION With TO-220Fa package Complement to type 2SD1499 Wide area of safe operation High fT APPLICATIONS For high power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 , JMnic Product Specification 2SB1063 Silicon PNP Power Transistors CHARACTERISTICS Tj , 100-200 2 200 JMnic Product Specification 2SB1063 Silicon PNP Power Transistors JMnic
Original
Abstract: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1063 DESCRIPTION ·Low Collector Saturation Voltage: VCE(sat)= -2.0V(Max)@IC= -3A ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SD1499 APPLICATIONS ·Designed for high power amplification. .cn mi e ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER scs .i VALUE ww , Semiconductor isc Silicon PNP Power Transistor 2SB1063 ELECTRICAL CHARACTERISTICS TC=25 unless INCHANGE Semiconductor
Original
Abstract: SavantIC Semiconductor Product Specification 2SB1063 Silicon PNP Power Transistors DESCRIPTION ·With TO-220Fa package ·Complement to type 2SD1499 ·Wide area of safe operation ·High fT APPLICATIONS ·For high power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 , temperature -55~150 SavantIC Semiconductor Product Specification 2SB1063 Silicon PNP Power , tolerance: ±0.15 mm) 3 2SB1063 - -
Original
Abstract: - 60 - S « Type No. tt « Manuf. H !M SANYO M S TOSHIBA B a NEC B iL HITACHI « ± m FUJITSU « T MATSUSHITA H m MITSUBISHI ⡠- A ROHM 2SB 1013 V H. 2SA1160 2SB1068 2SB976 2SB1426 2SB 1014 «- S à 2SA1020 2SB1116 2SB621 2SB1Q44M 2S8 1015 - M 'S 2SB1134 2SB1094 2SB941 2SB1370 2SB 1016 , ü 2 2SB1454 2SB1095 2SB1063 2SB1294 2SB 1017 S 3E 2SB1454 2SB1095 2SB942A 2SA1635 , 2SB1063 2SB1294 2SB 1040 ^ B m. 2SB926 2SA1243 2SB1182 2SB 1041 - ⡠-A 2SA1708 2SA1315 2SB984 -
OCR Scan
2SB1344 2SD2238 2SB1067 2SB564 2SA934 2SB1013 nec 1026 2SB1041 2S897 2SB1467 2SA1742 2SB946 2SB1290 2SB1135 2SB953A
Abstract: Power Transistors 2SB1063 2SB1063 Silicon PNP Planar Type High Power Amplifier Complementary Pair with 2SD1499 Package Dimensions Features in (Iife) ia6 areff orsifAy operaifornj â'¢ High transition frequency (fT) â'¢ "Full Pack" package for simplified mounting on a heat sink with one screw Absolute Maximum Ratings (Tc=25°C) Item Symbol Value Unit Collector-base voltage Vcbo -100 v : Collector-emitter voltage Vceo -100 v Emitter-base voltage Ve bo Peak collector current Icp _8 A Collector -
OCR Scan
Abstract: Power Transistors 2SB1063 2SB1063 Silicon PNP Planar Type Package Dimensions High Power Amplifier Complementary Pair with 2SD1499 â  Features â'¢ V ery good linearity of DC current gain (Ii f e ) â'¢ Wide area of safety operation (ASO) â'¢ High transition frequency (ft) â'¢ â'Full Packâ' package for simplified mounting on a heat sink with one screw â Absolute Maximum Ratings (Tc=25°C) Item Symbol Value Unit Collector-base voltage V CBO -1 0 0 V -
OCR Scan
Abstract: 2SB897 2SB1469 2SB 1479 A 2SB887 2SB897 2SB1470 2SB 1481 2SB1227 2SB1430 2SB1063 2SB , 2SB1063 2SB 1496 â¡ â'"A 2SB1273 2SB1416 2SB 1497 b a 2SA1707 2SA1020 2SB1446 2SB1517 2SB -
OCR Scan
2SA1704 2SB1434 2SA1692 2SB1117 2SB1452 2SA1836 2SB1483 2SB1453 2sb1497 2sb1355 2SA1776 2SA1709
Abstract: Power Transistors 2SB1063 2SB1063 Silicon PNP Planar Type H igh P o w e r A m p lifie r C o m p le m e n ta ry P a ir with 2SD1499 F e a tu re s · V e r y g o o d lin e a r ity o f D C c u r r e n t g a in · W id e a r e a o f s a f e ty o p e r a tio n (A S O ) · H ig h t r a n s itio n fr e q u e n c y (ft) · " F u ll P a c k " p a c k a g e fo r s im p lifie d m o u n tin g o n a h e a t s in k w ith o n e screw 0.5max.1.5max. . P a c k a g e D im e n s io n s U n it m m 1 0 -
OCR Scan
2SB10 R3SB52
Abstract: 375 2SB942/A 2SD1267/A 2SD1517 : A2SD2549 2SD2157 2SB1063 2SD1499 2SB930/A 2SD1253/A 2SB1173/A , 2SB1050 2SB1052 2SB1054 2SB1063 2SB1070/A 2SB1071/A 2SB1073 2SB1108J 2SB1148/A 2SB1154 2SB1155 2SB1156 -
OCR Scan
2SC4714 2SB0774 2SA2004 2SB160 2SB642 2sc5340 2SC2258 2SC3063 2SC5340 T0-220 2SC2923
Abstract: This product complies with the RoHS Directive (EU 2002/95/EC). Power Transistors 2SB1063 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD1499 4.2±0.2 M Di ain sc te on na tin nc ue e/ d Symbol Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation -100 VCEO -100 -5 A , RoHS Directive (EU 2002/95/EC). 2SB1063 PC Ta IC VCE (1) 40 20 -6 TC Panasonic
Original
SC-67
Abstract: -0.1 -0.0002 2SB1062 KT LF A -15 -10 -0.5 0. 6 -0.1 -10 100 350 -2 -0.5 -0.2 -1 -0.4 -0.008 2SB1063 , )ftB970 2SB1062 20* -5 -0. 5 170» 2SD1499 (TOâ'"220F Ça) BCE 2SB1063 10* -5 -0. 5 50 -
OCR Scan
2SB1028 2SB1030 2SB1030A 2SB1031K 2SB1032K 2SB1033 2SB1039 2SB1045 2SB1038 2SB1037 2SB1036 2SB1035
Abstract: Power Transistors 2SD1499 2SD1499 Silicon PNP Triple-Diffused Planar Darlington Type High Power Amplifier â  Package Dimensions Complementary Pair with 2SB1063 â  Features â'¢ Very good linearity of DC current gain (hhE) â'¢ Wide area of safety operation (ASO) â'¢ High transition frequency (fT) â'¢ "Full Pack" package for simplified mounting on a heat sink with one screw Absolute Maximum Ratings (Tc=25°C) Item Symbol Value Unit Collector-base voltage VcBO 100 V Collector-emitter voltage -
OCR Scan
OF IC 741 741p operation of ic 741 of 741 ic uA 741 IC IC ua 74 100X100X2
Abstract: 2SD1743/A 2SD812 2SD2157 2SB1063 2SD1499 2SB1191/A 2SD1770/A 2SB1192/A 2SD1772/A 2SB940/A 2SD1264/A -
OCR Scan
B1548 2SB1299A 2SB954/A 2SD1480 2SD1265/A T0220D 2SB1169/A 2SB1170
Abstract: 100 5 -
OCR Scan
2SA1605 2SC3942 2SA1817 2SC4717 2SC3945 2SA1375 d53 pnp transistor 2SD1539 2SD2374 2SD1265A
Abstract: Power Transistors 2SB1063 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD1499 Parameter Symbol Rating VCBO -100 VCEO -100 VEBO -5 IC -5 ICP -8 A 40 2.54±0.3 A Peak collector current 0.5+0.2 ­0.1 0.8±0.1 V Collector current 16.7±0.3 V Emitter-base voltage (Collector open) 1.3±0.2 , to 120 100 to 200 Publication date: February 2003 SJD00039AED 1 2SB1063 PC Ta IC Panasonic
Original
Abstract: Power Transistors 2SB1063 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD1499 5.5±0.2 2.7±0.2 Parameter 14.0±0.5 1.3±0.2 1.4±0.1 0.5+0.2 ­0.1 0.8±0.1 ea s ht e v tp is :// it pa fo na llo so win ni g c. U co R .jp L a /s bo em u ic t la on te /e st -in in de for x. ma ht t m ion l . Absolute Maximum , to 80 60 to 120 100 to 200 Publication date: February 2003 SJD00039AED 1 2SB1063 Panasonic
Original
Abstract: 2SB1063 2SB 1169 fé T 2SB1201 2SB 1170 fé T 2SB1201 2SB 1171 fé T 2SA1552 -
OCR Scan
2SB1267 2SB937A 2SB1165 2SB933 2SB863 2SA1302 2SA1302 TOSHIBA Toshiba 2Sa1302 SB 1156 2sb817 2SB817
Abstract: 2SB1063 2SB1513 2SA 1841 â'¢ a m 2SB1195 2SB1549 2SA 1843 a a 2SB1417 2SB1358 2SA 1844 a -
OCR Scan
2SB892 2SB1433 2SA1532 2SA1792 2SB1413 2SA1793 2SA1885 2SA1115 2SA1371 2SA1323
Abstract: This product complies with the RoHS Directive (EU 2002/95/EC). Power Transistors 2SB1063 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD1499 4.2±0.2 M Di ain sc te on na tin nc ue e/ d 16.7±0.3 2.7±0.2 Ï 3.1±0.1 Parameter Symbol Rating VCBO â'100 VCEO â'100 V Emitter-base voltage (Collector open , RoHS Directive (EU 2002/95/EC). 2SB1063 PC  Ta IC  VCE â'6 TC=25˚C VCE=â Panasonic
Original
Abstract: Power Transistors 2SB1063 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD1499 5.5±0.2 2.7±0.2 Parameter 14.0±0.5 1.3±0.2 1.4±0.1 0.5+0.2 ­0.1 0.8±0.1 ea s ht e v tp is :// it pa fo na llo so win ni g c. U co R .jp L a /s bo em u ic t la on te /e st -in in de for x. ma ht t m ion l . Absolute Maximum , to 80 60 to 120 100 to 200 Publication date: February 2003 SJD00039AED 1 2SB1063 -
OCR Scan
2SB764 2SB605 2SA683 2SB793 2SA1173 2SA1384 2SA1146 2SB1200 2SB507 2SA1Q20 2SA1705
Abstract: This product complies with the RoHS Directive (EU 2002/95/EC). Power Transistors 2SB1063 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD1499 4.2±0.2 M Di ain sc te on na tin nc ue e/ d 16.7±0.3 2.7±0.2 Ï 3.1±0.1 Parameter Symbol Rating VCBO â'100 VCEO â'100 V Emitter-base voltage (Collector open , RoHS Directive (EU 2002/95/EC). 2SB1063 PC  Ta IC  VCE â'6 TC=25˚C VCE=â -
OCR Scan
B1604 SB945 D2469 d1266a D1271A D1985A D2374 d1266 2SC2924 2SC5121 2SC2653/ 2SD1112 2SC1905
Showing first 20 results.