2SB0941 2SB0941A 2SB941 2SB941A 2SD1266 2SD1266A SC-67 - Datasheet Archive
Power Transistors 2SB0941 2SB0941, 2SB0941A 2SB0941A (2SB941 2SB941, 2SB941A 2SB941A) Silicon PNP epitaxial planar type Unit: mm 4.2±0.2 5.5±0.2 2.7±0.2 Collector to base voltage Rating Unit VCBO -60 2SB0941 2SB0941 -60 VCEO V -80 2SB0941A 2SB0941A 0.5+0.2 0.1 2.54±0.3 5.08±0.5 -80 2SB0941A 2SB0941A 1.3±0.2 0.8±0.1 V 2SB0941 2SB0941 Collector to emitter voltage 16.7±0.3 14.0±0.5 Symbol 1.4±0.1 Solder Dip (4.0) I Absolute Maximum Ratings TC = 25°C Parameter 3.1±0.1 ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low tp in o co n an in :// g nt n ce c g pa U in tin t e fo na RL ue ue ype typ ur so a d t d e Pr od ty ni bo yp p c. u e e uc ne t l d tl ife t/s ate cy c/ st en in cl e fo st rm ag at e. io n. · High forward current transfer ratio hFE which has satisfactory linearity · Low collector to emitter saturation voltage VCE(sat) · Full-pack package which can be installed to the heat sink with one screw 7.5±0.2 M Di ain sc te on na tin nc ue e/ d I Features 10.0±0.2 4.2±0.2 0.7±0.1 For low-frequency power amplification Complementary to 2SD1266 2SD1266 and 2SD1266A 2SD1266A Emitter to base voltage VEBO -5 V Peak collector current ICP -5 IC -3 A PC 35 1 : Base 2 : Collector 3 : Emitter EIAJ : SC-67 SC-67 TO-220F Package A Collector current 1 2 3 W TC = 25°C Collector power dissipation Ta = 25°C 2 Junction temperature Tj 150 °C Storage temperature Tstg -55 to +150 °C I Electrical Characteristics TC = 25°C Parameter Symbol Collector cutoff current 2SB0941 2SB0941 Collector cutoff current ICES 2SB0941 2SB0941 nt in 2SB0941A 2SB0941A ICEO co Emitter cutoff current is 2SB0941A 2SB0941A Collector to emitter voltage 2SB0941 2SB0941 Min Max Unit VCE = -60 V, VBE = 0 -200 µA VCE = -80 V, VBE = 0 -200 VCE = -30 V, IB = 0 -300 VCE = -60 V, IB = 0 -300 Collector to emitter saturation voltage hFE1 * VCE = -4 V, IC = -1 A 70 VCE = -4 V, IC = -3 A 10 VCE = -4 V, IC = -3 A -1 µA -60 mA V -80 Pl ea /D Base to emitter voltage IC = -30 mA, IB = 0 Typ VEB = -5 V, IC = 0 VBE 2SB0941A 2SB0941A Forward current transfer ratio IEBO VCEO hFE2 ce M ai nt en an Conditions VCE(sat) 250 -1.8 IC = -3 A, IB = - 0.375 A -1.2 V V fT VCE = -10 V, IC = - 0.5 A, f = 10 MHz 30 MHz Turn-on time ton IC = -1 A, IB1 = - 0.1 A, IB2 = 0.1 A 0.5 µs Storage time tstg 1.2 µs Fall time tf 0.3 µs Transition frequency Note) *: Rank classification Rank Q P Ordering can be made by the common rank (PQ rank hFE1 = 70 to 250) in the rank classification. hFE1 70 to 150 120 to 250 Note.) The Part numbers in the Parenthesis show conventional part number. 1 2SB0941 2SB0941, 2SB0941A 2SB0941A Power Transistors PC T a IC VCE 40 30 (1) 20 10 TC=25°C IB=100mA 4 80mA 60mA 3 40mA 30mA 20mA 2 40 60 80 100 120 140 160 2 6 8 0 Collector to emitter voltage VCE (V) TC=100°C 25°C 25°C 1 3 300 100 TC=100°C 25°C 25°C 30 10 1 3 t=1ms IC 10ms 1 DC 0.3 0.03 0.01 1 3 10 30 2SB0941A 2SB0941A 2SB0941 2SB0941 0.1 100 300 1000 Collector to emitter voltage VCE (V) 1 3 Collector current IC (A) Rth(t) t Thermal resistance Rth(t) (°C/W) 3 10 1 0.01 0.03 0.1 0.3 10 103 ICP 30 3 Area of safe operation (ASO) 10 100 Collector current IC (A) 100 30 VCE=5V f=10MHz TC=25°C 300 3 Collector current IC (A) (1) Without heat sink (2) With a 100 × 100 × 2mm Al heat sink 102 (1) (2) 10 1 101 102 104 2.0 1000 1 0.01 0.03 0.1 0.3 10 Non repetitive pulse TC=25°C 1.6 3000 3000 Transition frequency fT (MHz) 1 1.2 fT I C 1000 3 0.8 VCE=4V Forward current transfer ratio hFE 10 0.01 0.01 0.03 0.1 0.3 0.4 Base to emitter voltage VBE (V) 10000 IC/IB=10 0.1 Collector current IC (A) 10 hFE IC 0.3 2 2 10000 30 25°C 4 0 4 VCE(sat) IC 100 0.03 25°C TC=100°C 4mA 16mA 0 Ambient temperature Ta (°C) 6 8mA 0 20 8 12mA 1 (4) 0 VCE=4V 5 (2) (3) 10 Collector current IC (A) (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=2W) 0 Collector to emitter saturation voltage VCE(sat) (V) IC VBE 6 Collector current IC (A) Collector power dissipation PC (W) 50 103 102 101 1 Time t (s) 10 102 103 104 10 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. 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