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ENN6308 2SA2015/2SC5568 2SA2015 2SC5568 21400TS TA-2522 20IB1 --20IB2 IT00189 - Datasheet Archive
PNP/NPN Epitaxial Planar Silicon Transistors 2SA2015/2SC5568 DC/DC Converter Applications Applications Package Dimensions
Ordering number:ENN6308 ENN6308 PNP/NPN Epitaxial Planar Silicon Transistors 2SA2015/2SC5568 2SA2015/2SC5568 DC/DC Converter Applications Applications Package Dimensions · Relay drivers, lamp drivers, motor drivers, strobes. unit:mm 2163 Features [2SA2015/2SC5568 2SA2015/2SC5568] · Adoption of MBIT processes. · Large current capacitance. · Low collector-to-emitter saturation voltage. · High-speed switching. · Ultrasmall-sized package permitting applied sets to be made small and slim. · High allowable power dissipation. 4.5 1.6 3 2 2.5 4.25max 1.0 1.5 1 0.4 0.5 0.4 1.5 3.0 1 : Base 2 : Collector 3 : Emitter SANYO : PCP (Bottom view) 0.75 Specifications ( ) : 2SA2015 2SA2015 Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (30)40 V Collector-to-Emitter Voltage VCEO VEBO ()30 V ()6 V IC ()8 A ICP ()12 A IB ()1.2 A 1.3 W Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation PC Junction Temperature Tj Storage Temperature Mounted on a ceramic board (250mm2×0.8mm) Tstg 3.5 W 150 °C 55 to +150 °C Tc=25°C Electrical Characteristics at Ta = 25°C Parameter Symbol Conditions Ratings min typ max Unit Collector Cutoff Current ICBO VCB=()30V, IE=0 ()0.1 µA Emitter Cutoff Current IEBO VEB=()4V, IC=0 ()0.1 µA DC Current Gain hFE VCE=()2V, IC=()500mA fT VCE=()10V, IC=()500mA Gain-Bandwidth Product Output Capacitance Cob 200 560 (290) VCB=()10V, f=1MHz MHz 320 MHz (52)40 Marking : 2SA2015 2SA2015 : AV 2SC5568 2SC5568 : FE pF Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 21400TS 21400TS (KOTO) TA-2522 TA-2522 No.63081/5 2SA2015/2SC5568 2SA2015/2SC5568 Continued on preceding page. Parameter Symbol Ratings Conditions min max (200) (340) mV 180 270 mV (170) (290) mV 130 195 mV ()0.85 ()1.2 IC=()4A, IB=()200mA Collector-to-Emitter Saturation Voltage VCE(sat) IC=()2.5A, IB=()50mA Base-to-Emitter Saturation Voltage VBE(sat) IC=()2.5A, IB=()50mA V (30) Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=()1mA, RBE= Emitter-to-Base Breakdown Voltage Turn-ON Time V(BR)EBO ton Storage Time tstg V See specified Test Circuit tf V ()30 V(BR)CBO IC=()10µA, IE=0 V 40 Collector-to-Base Breakdown Voltage See specified Test Circuit Fall Time Unit typ IE=()10µA, IC=0 ()6 V 30 ns (190) ns 320 ns 15 ns See specified Test Circuit Switching Time Test Circuit PW=20µs D.C.1% IB1 IB2 OUTPUT INPUT VR RB RL + + 50 100µF 470µF VBE=-5V VCC=12V 20IB1 20IB1= -20IB2 -20IB2= IC=2.5A (For PNP, the polarity is reversed.) IC - VCE -8 2SA2015 2SA2015 90mA -90mA -5 -40mA -4 -30mA -3 -20mA -2 A 70m 7 A 60m A 50m 40mA 80mA A -6 -70mA -60mA -50mA 6 30mA 100m -80mA mA 00 -1 Collector Current, IC A Collector Current, IC A -7 IC - VCE 8 5 20mA 4 3 10mA 2 -10mA 1 -1 IB=0 -0.8 -1.2 -1.6 Collector-to-Emitter Voltage, VCE V -5 -4 25°C -3 -1 -25° C Ta= 75°C -2 0.8 1.6 2.0 IT00189 IT00189 2SC5568 2SC5568 VCE=2V 7 6 5 25°C 4 3 2 1 0 1.2 IC - VBE 8 Collector Current, IC A -6 0.4 Collector-to-Emitter Voltage, VCE V IT00188 IT00188 2SA2015 2SA2015 VCE=-2V -7 Collector Current, IC A 0 IC - VBE -8 IB=0 2SC5568 2SC5568 0 -2.0 °C -0.4 Ta=7 5 0 -25°C 0 0 0 -0.2 -0.4 -0.6 -0.8 -1.0 Base-to-Emitter Voltage, VBE V -1.2 -1.4 IT00190 IT00190 0 0.2 0.4 0.6 0.8 1.0 Base-to-Emitter Voltage, VBE V 1.2 1.4 IT00191 IT00191 No.63082/5 2SA2015/2SC5568 2SA2015/2SC5568 hFE - IC 1000 2SA2015 2SA2015 VCE=-2V 7 5 25°C 2 -25°C 100 7 5 3 25°C 100 7 5 3 2 2 10 -0.01 2 3 5 7 -0.1 3 5 7 -1.0 2 3 VCE(sat) - IC 2 -100 7 5 5°C 7 Ta= 3 2 ° -25 C -10 7 5 25°C 3 2 -1.0 -0.01 2 3 5 7 -0.1 3 5 7 -1.0 2 3 2 -100 °C 75 Ta= 7 5 3 25°C C -25° 2 3 5 7 -0.1 2 3 5 7 -1.0 2 3 Collector Current, IC A 3 2 Ta=-25°C 7 75°C 25°C 3 2 3 5 7 -0.1 2 3 5 7 -1.0 Collector Current, IC A 2 3 5 7 -10 IT00198 IT00198 3 5 7 10 IT00193 IT00193 2SC5568 2SC5568 IC / IB=20 3 2 C 75° Ta= °C -25 10 7 5 25°C 3 2 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Collector Current, IC A 5 7 10 IT00196 IT00196 VCE(sat) - IC 2SC5568 2SC5568 IC / IB=50 5 3 2 100 7 °C 75 a= T 5°C -2 5 3 2 2 3 5 7 0.1 2 3 5 7 1.0 25°C 2 3 5 7 10 IT00197 IT00197 VBE(sat) - IC 2SC5568 2SC5568 IC / IB=50 7 Base-to-Emitter Saturation Voltage, VBE (sat) V 5 2 2 VCE(sat) - IC 10 7 -0.1 -0.01 5 7 1.0 Collector Current, IC A 2SA2015 2SA2015 IC / IB=50 5 3 100 7 5 10 0.01 5 7 -10 IT00195 IT00195 VBE(sat) - IC -10 -1.0 2 7 3 2 5 7 0.1 Collector Current, IC A 1000 2SA2015 2SA2015 IC / IB=50 -10 -0.01 3 3 2 1.0 0.01 5 7 -10 IT00194 IT00194 VCE(sat) - IC -1000 5 2 Collector Current, IC A 2 1000 7 5 Collector-to-Emitter Saturation Voltage, VCE (sat) mV 2SA2015 2SA2015 IC / IB=20 3 7 10 0.01 5 7 -10 IT00192 IT00192 Collector-to-Emitter Saturation Voltage, VCE (sat) mV Collector-to-Emitter Saturation Voltage, VCE (sat) mV 2 Collector Current, IC A -1000 7 5 Collector-to-Emitter Saturation Voltage, VCE (sat) mV -25°C 2 3 Base-to-Emitter Saturation Voltage, VBE (sat) V Ta=75°C Ta=75°C 3 2SC5568 2SC5568 VCE=2V 7 DC Current Gain, hFE DC Current Gain, hFE 5 hFE - IC 1000 5 3 2 1.0 Ta=-25°C 7 5 75°C 25°C 3 2 0.1 0.01 2 3 5 7 0.1 2 3 5 7 1.0 Collector Current, IC A 2 3 5 7 10 IT00199 IT00199 No.63083/5 2SA2015/2SC5568 2SA2015/2SC5568 Cob - VCB 5 3 100 7 5 3 2 10 7 5 2 3 5 7 -1.0 2 3 5 7 -10 2 3 100 7 5 3 2 10 7 5 Collector-to-Base Voltage, VCB - V f T - IC 1000 5 7 0.1 5 7 -100 IT00200 IT00200 2 3 5 7 1.0 7 5 3 2 100 7 5 3 2 5 7 10 2 3 5 7 100 IT00201 IT00201 f T - IC 1000 2SA2015 2SA2015 VCE=-10V 2 3 Collector-to-Base Voltage, VCB - V Gain-Bandwidth Product, fT MHz 5 7 -0.1 Gain-Bandwidth Product, fT MHz 2 3 2 3 2 10 2SC5568 2SC5568 VCE=10V 7 5 3 2 100 7 5 3 2 10 5 7-0.01 2 3 5 7 -0.1 2 3 5 7 -1.0 2 3 Collector Current, IC A ICP 1m 5 7 0.1 2 3 5 7 1.0 10 0m DC 1.0 7 5 s op era tio n 3 2 2SA2015 2SA2015 / 2SC5568 2SC5568 Tc=25°C Single pulse For PNP, the minus sign () is omitted. 2 3 5 7 1.0 2 3 5 2 3 5 7 10 IT00203 IT00203 Collector Current, IC A Collector Dissipation, PC W 50 0µ s s IC 0.01 0.1 3 PC - Ta 2SA2015 2SA2015 / 2SC5568 2SC5568 10ms 3 2 3 2 2 2.0 s 0µ 10 10 7 5 0.1 7 5 5 7 0.01 5 7 -10 IT00202 IT00202 ASO 3 2 Collector Current, IC A 2SC5568 2SC5568 f=1MHz 3 Output Capacitance, Cob pF Output Capacitance, Cob pF 2 Cob - VCB 5 2SA2015 2SA2015 f=1MHz 1.5 M 1.3 ou nte do na 1.0 ce ram ic bo ard (25 0m 0.5 m2 ×0 .8m m) 0 7 10 2 Collector-to-Emitter Voltage, VCE V 3 5 IT00204 IT00204 0 20 40 60 80 100 120 Ambient Temperature, Ta °C 140 160 IT00205 IT00205 PC - Tc 4.0 2SA2015 2SA2015 / 2SC5568 2SC5568 Collector Dissipation, PC W 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 20 40 60 80 100 120 Case Temperature, Tc °C 140 160 IT01534 IT01534 No.63084/5 2SA2015/2SC5568 2SA2015/2SC5568 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of February, 2000. Specifications and information herein are subject to change without notice. PS No.63085/5