2SA2005 -160V 2SC5511 - Datasheet Archive

 

Transistors High-voltage Switching (Audio output amplifier transistor, TV velocity modulation transistor) (-160V, -1.5A) 2SA2005

 

2SA2005 2SA2005 Transistors High-voltage Switching (Audio output amplifier transistor, TV velocity modulation transistor) (-160V -160V, -1.5A) 2SA2005 2SA2005 !Features 1) Flat DC current gain characteristics. 2) High breakdown voltage. (BVCEO = -160V -160V) 3) High fT. (Typ. 150MHz) 4) Wide SOA (safe operating area). 5) Complements the 2SC5511 2SC5511. !External dimensions (Units : mm) 4.5 10.0 1.2 1.3 0.8 2.54 !Absolute maximum ratings (Ta = 25°C) 2.54 (1) (2) (3) (1) (2) (3) Parameter Symbol Limits Unit Collector-base voltage Collector-emitter voltage VCBO VCEO -160 -160 V V Emitter-base voltage Collector current VEBO IC -5 -1.5 V A ROHM : TO-220FN 2 W 20 PC Collector power dissipation W (Tc = 25°C) Junction temperature Tj 150 °C Storage temperature Tstg -55~+150 °C !Packaging specifications and hFE Type 2SA2005 2SA2005 Package hFE Code Basic ordering unit TO-220FN DE 500 !Electrical characteristics (Ta = 25°C) Parameter Collector-emitter breakdown voltage Symbol Min. BVCEO -160 Typ. - Max. - Unit V IC = -1mA Collector-base breakdown voltage Emitter-base breakdown voltage BVCBO BVEBO -160 -5 - - - - V V IC = -50µA IE = -50µA Collector cutoff current ICBO - - -1 µA VCB = -160V -160V Emitter cutoff current IEBO - - -1 µA VEB = -4V VCE(sat) - - -1 V IC/IB = -1A/-0.1A VCE = -5V , IC = -0.1A Collector-emitter saturation voltage hFE 60 - 200 - Transition frequency fT - 150 - MHz Output capacitance Cob - 35 - pF DC current transfer ratio 2.8 8.0 5.0 14.0 15.0 12.0 3.2 Conditions VCE = -10V , IE = -0.2A , f = 100MHz VCB = -10V , IE = 0A , f = 1MHz 0.75 2.6 (1) Base(Gate) (2) Collector(Drain) (3) Emitter(Source)